JP2003068883A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003068883A
JP2003068883A JP2001255202A JP2001255202A JP2003068883A JP 2003068883 A JP2003068883 A JP 2003068883A JP 2001255202 A JP2001255202 A JP 2001255202A JP 2001255202 A JP2001255202 A JP 2001255202A JP 2003068883 A JP2003068883 A JP 2003068883A
Authority
JP
Japan
Prior art keywords
pair
misfet
memory device
semiconductor memory
misfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001255202A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Hashimoto
剛 橋本
Hidetoshi Iwai
秀俊 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001255202A priority Critical patent/JP2003068883A/ja
Priority to TW091111892A priority patent/TW571433B/zh
Priority to PCT/JP2002/005613 priority patent/WO2003019663A1/fr
Publication of JP2003068883A publication Critical patent/JP2003068883A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
JP2001255202A 2001-08-24 2001-08-24 半導体記憶装置 Pending JP2003068883A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001255202A JP2003068883A (ja) 2001-08-24 2001-08-24 半導体記憶装置
TW091111892A TW571433B (en) 2001-08-24 2002-06-03 Semiconductor memory device
PCT/JP2002/005613 WO2003019663A1 (fr) 2001-08-24 2002-06-06 Memoire a semiconducteurs et procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001255202A JP2003068883A (ja) 2001-08-24 2001-08-24 半導体記憶装置

Publications (1)

Publication Number Publication Date
JP2003068883A true JP2003068883A (ja) 2003-03-07

Family

ID=19083220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001255202A Pending JP2003068883A (ja) 2001-08-24 2001-08-24 半導体記憶装置

Country Status (3)

Country Link
JP (1) JP2003068883A (fr)
TW (1) TW571433B (fr)
WO (1) WO2003019663A1 (fr)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086157A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2007013196A (ja) * 2006-08-23 2007-01-18 Renesas Technology Corp 半導体装置
JP2008159669A (ja) * 2006-12-21 2008-07-10 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2011066105A (ja) * 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体装置
JP5018475B2 (ja) * 2005-02-23 2012-09-05 富士通セミコンダクター株式会社 半導体回路装置及びその半導体回路装置の製造方法
CN102832221A (zh) * 2011-06-16 2012-12-19 三星电子株式会社 具有竖直装置和非竖直装置的半导体装置及其形成方法
US8378425B2 (en) 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8581333B2 (en) 2008-04-16 2013-11-12 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same
JP2013239713A (ja) * 2010-02-05 2013-11-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
JP2014225491A (ja) * 2013-05-15 2014-12-04 猛英 白土 半導体装置
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096065A (ja) 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP4343571B2 (ja) 2002-07-31 2009-10-14 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004221242A (ja) 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265558A (ja) * 1988-04-15 1989-10-23 Sony Corp 半導体メモリ
JPH05167040A (ja) * 1991-05-03 1993-07-02 Motorola Inc 集積回路メモリ装置およびその配置構造
JPH06104405A (ja) * 1992-09-22 1994-04-15 Toshiba Corp スタティック型メモリ
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH07153273A (ja) * 1993-11-26 1995-06-16 Hitachi Ltd 半導体集積回路装置
JPH07321228A (ja) * 1994-05-26 1995-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08241931A (ja) * 1995-02-08 1996-09-17 Internatl Business Mach Corp <Ibm> 三次元ｓｒａｍトレンチ構造及び製造方法
JPH09232447A (ja) * 1996-02-19 1997-09-05 Nec Corp 半導体メモリ装置
JP2001028443A (ja) * 1999-05-13 2001-01-30 Hitachi Ltd 半導体装置およびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265558A (ja) * 1988-04-15 1989-10-23 Sony Corp 半導体メモリ
JPH05167040A (ja) * 1991-05-03 1993-07-02 Motorola Inc 集積回路メモリ装置およびその配置構造
JPH06104405A (ja) * 1992-09-22 1994-04-15 Toshiba Corp スタティック型メモリ
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH07153273A (ja) * 1993-11-26 1995-06-16 Hitachi Ltd 半導体集積回路装置
JPH07321228A (ja) * 1994-05-26 1995-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08241931A (ja) * 1995-02-08 1996-09-17 Internatl Business Mach Corp <Ibm> 三次元ｓｒａｍトレンチ構造及び製造方法
JPH09232447A (ja) * 1996-02-19 1997-09-05 Nec Corp 半導体メモリ装置
JP2001028443A (ja) * 1999-05-13 2001-01-30 Hitachi Ltd 半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6012003903; Ｓ．Ｗａｔａｎａｂｅ　ｅｔ　ａｌ．: 'Ａ　Ｎｏｖｅｌ　Ｃｉｒｃｕｉｔ　Ｔｅｃｈｎｏｌｏｇｙ　ｗｉｔｈ　Ｓｕｒｒｏｕｎｄｉｎｇ　Ｇａｔｅ　Ｔｒａｎｓｉｓｔｏｒｓ（ＳＧＴ'ｓ）　ｆｏｒ　Ｕｌｔｒａ　Ｈｉｇｈ　Ｄｅｎｓｉｔｙ　ＤＲＡＭ'ｓ' ＩＥＥＥ　ＪＯＵＲＮＡＬ　ＯＦ　ＳＯＬＩＤ-ＳＴＡＴＥ　ＣＩＲＣＵＩＴＳ Ｖｏｌ．３０，　Ｎｏ．９, 199509, ｐａｇｅｓ　９６０-９７１, ＩＥＥＥ *

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086157A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP5018475B2 (ja) * 2005-02-23 2012-09-05 富士通セミコンダクター株式会社 半導体回路装置及びその半導体回路装置の製造方法
JP2007013196A (ja) * 2006-08-23 2007-01-18 Renesas Technology Corp 半導体装置
JP2008159669A (ja) * 2006-12-21 2008-07-10 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8378425B2 (en) 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device
US8581333B2 (en) 2008-04-16 2013-11-12 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
JP2011066105A (ja) * 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体装置
US8198654B2 (en) 2009-09-16 2012-06-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US9793276B2 (en) 2010-02-05 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor and capacitor
US9190413B2 (en) 2010-02-05 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013239713A (ja) * 2010-02-05 2013-11-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
CN102832221A (zh) * 2011-06-16 2012-12-19 三星电子株式会社 具有竖直装置和非竖直装置的半导体装置及其形成方法
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
JP2014225491A (ja) * 2013-05-15 2014-12-04 猛英 白土 半導体装置

Also Published As

Publication number Publication date
WO2003019663A1 (fr) 2003-03-06
TW571433B (en) 2004-01-11

Similar Documents

Publication Publication Date Title
JP2003068883A (ja) 半導体記憶装置
US6118158A (en) Static random access memory device having a memory cell array region in which a unit cell is arranged in a matrix
US7981738B2 (en) Semiconductor memory device and a method of manufacturing the same
JP2000058675A (ja) 半導体集積回路装置およびその製造方法
JPH0936252A (ja) 半導体集積回路装置およびその製造方法
JP2002289703A (ja) 半導体記憶装置およびその製造方法
JPWO2007063990A1 (ja) 半導体装置およびその製造方法
JP2998679B2 (ja) 半導体記憶装置及びその製造方法
JP2004103851A (ja) スタティック型半導体記憶装置
KR20040104404A (ko) 반도체 집적 회로 장치의 제조 방법 및 반도체 집적 회로장치
KR100377082B1 (ko) 반도체 장치
JP2001358232A (ja) 半導体記憶装置
JP4024495B2 (ja) 半導体集積回路装置
JP3363750B2 (ja) 半導体集積回路装置の製造方法
JP2000036542A (ja) 半導体集積回路装置およびその製造方法
JP2001308204A (ja) 半導体記憶装置
JPH10284618A (ja) 半導体装置及びその製造方法
JP4024813B2 (ja) 半導体集積回路装置
JP3839418B2 (ja) 半導体集積回路装置の製造方法
JP2007258739A (ja) 半導体集積回路装置
JPH05251665A (ja) 半導体装置の製造方法
JPH0773115B2 (ja) 半導体記憶装置
JPH09283640A (ja) スタティック型半導体メモリ装置
WO2007063988A1 (fr) Dispositif semi-conducteur et son procédé de fabrication
KR0147645B1 (ko) 스태틱 랜덤 억세스 메모리 소자 및 그 제조방법

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20060707

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080716

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120131

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20140129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20140129

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20140410

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140513