JPH01163329U - - Google Patents
Info
- Publication number
- JPH01163329U JPH01163329U JP6098188U JP6098188U JPH01163329U JP H01163329 U JPH01163329 U JP H01163329U JP 6098188 U JP6098188 U JP 6098188U JP 6098188 U JP6098188 U JP 6098188U JP H01163329 U JPH01163329 U JP H01163329U
- Authority
- JP
- Japan
- Prior art keywords
- holder
- reaction
- reaction vessel
- gas
- blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Description
第１図Ａは本考案実施例装置の模式的断面図、
第１図Ｂは同要部拡大斜視図、第２図はＡｌ濃度
分布図、第３図は膜厚分布図である。
２……反応容器、３……反応原料ガス導入口、
４……反応排ガス排出口、５……基板ホルダ、６
……回転軸、７……羽根、８……基板。
FIG. 1A is a schematic cross-sectional view of the device according to the present invention;
FIG. 1B is an enlarged perspective view of the same essential part, FIG. 2 is an Al concentration distribution diagram, and FIG. 3 is a film thickness distribution diagram. 2... Reaction container, 3... Reaction raw material gas inlet,
4...Reaction exhaust gas outlet, 5...Substrate holder, 6
...Rotating shaft, 7...Blade, 8...Substrate.
Claims (1)
を有する反応容器内に基板ホルダを配置し、この
ホルダを高速回転軸に結合すると共に、前記ホル
ダの回転時に、前記反応容器内でのガス流速を高
める羽根を前記ホルダに設けたことを特徴とする
半導体気相成長装置。 A substrate holder is disposed within a reaction vessel having an inlet for reaction raw material gas and an outlet for reaction exhaust gas, and this holder is coupled to a high-speed rotating shaft, and when the holder is rotated, the gas flow rate within the reaction vessel is controlled. 1. A semiconductor vapor phase growth apparatus characterized in that the holder is provided with a blade that increases the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6098188U JPH01163329U (en) | 1988-05-09 | 1988-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6098188U JPH01163329U (en) | 1988-05-09 | 1988-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01163329U true JPH01163329U (en) | 1989-11-14 |
Family
ID=31286672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6098188U Pending JPH01163329U (en) | 1988-05-09 | 1988-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01163329U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56112721A (en) * | 1980-02-12 | 1981-09-05 | Toshiba Corp | Vapor phase epitaxial growing apparatus |
-
1988
- 1988-05-09 JP JP6098188U patent/JPH01163329U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56112721A (en) * | 1980-02-12 | 1981-09-05 | Toshiba Corp | Vapor phase epitaxial growing apparatus |