JPH0133923B2 - - Google Patents
Info
- Publication number
- JPH0133923B2 JPH0133923B2 JP59263357A JP26335784A JPH0133923B2 JP H0133923 B2 JPH0133923 B2 JP H0133923B2 JP 59263357 A JP59263357 A JP 59263357A JP 26335784 A JP26335784 A JP 26335784A JP H0133923 B2 JPH0133923 B2 JP H0133923B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- melting point
- high melting
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は薄膜抵抗装置の製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a method of manufacturing a thin film resistor device.
従来の薄膜抵抗装置においては、第５図示のよ
うに、絶縁基板１１上に薄膜抵抗１２をパターン
形成し、コンタクト部分にアルミ配線１３，１４
を形成していた。
In the conventional thin film resistor device, as shown in FIG.
was forming.
薄膜抵抗装置において、高抵抗を得るには
Cr・Si系の絶縁材料の場合であれば、シリコンSi
の成分比を変えることによつても達成できるが、
一般的には、薄膜の厚さをさらに薄くする方が容
易である。しかし、膜厚を薄くするにしたがい、
薄膜とアルミニウムAlまたはアルミニウム合金
とのコンタクトは、熱処理による合金化の際に、
薄膜中のSiが配線材のAl中に吸収されることに
より、コンタクト不具合が生じ、抵抗の精度が悪
くなるという問題がある。
How to obtain high resistance in thin film resistor devices
In the case of Cr/Si based insulating materials, silicon
This can also be achieved by changing the component ratio of
Generally, it is easier to further reduce the thickness of the thin film. However, as the film thickness becomes thinner,
The contact between the thin film and aluminum or aluminum alloy is made during alloying by heat treatment.
There is a problem in that the Si in the thin film is absorbed into the Al of the wiring material, resulting in contact failure and poor resistance accuracy.
この発明は上記従来技術における薄膜抵抗のコ
ンタクト不都合による精度のバラツキをなくすこ
とを目的とするもので、薄膜抵抗体を絶縁膜で被
覆し、コンタクト部分を窓明けした後、そこに高
融点金属を設け、薄膜抵抗体とアルミニウムの配
線材とが直接接触しないようにした薄膜抵抗装置
の製造方法を提供するものである。
The purpose of this invention is to eliminate the variation in accuracy due to contact problems of thin film resistors in the above-mentioned conventional technology.The thin film resistor is coated with an insulating film, the contact area is opened, and then a high melting point metal is applied thereto. The present invention provides a method for manufacturing a thin film resistor device in which a thin film resistor and an aluminum wiring material are not brought into direct contact with each other.
第１図において、絶縁基板１上に薄膜抵抗体２
をパターン形成する。抵抗体２の材料としては、
Cr・Si系の材料などが用いられ、これを絶縁基
板１上にデポジシヨンし、ホトエツチングでパタ
ーニングする。その上にシリコン酸化物SiO2に
より絶縁膜３を全面に被覆形成した後、コンタク
ト部分４，５をホトエツチングで窓明ける（第２
図）。そしてコンタクト部分４，５に高融点金属
膜６，７で被覆する（第３図）。すなわち、シリ
コンと反応しずらいモリブデン、タングステン、
チタン、チタン・タングステン合金などを用いて
デポジシヨンした後コンタクト部分以外をエツチ
ングで除去する。そしてこの高融点金属膜６，７
の上からアルミニウムによる配線８，９を形成す
る（第４図）。
In FIG. 1, a thin film resistor 2 is placed on an insulating substrate 1.
form a pattern. As the material of the resistor 2,
A Cr/Si based material is used, and this is deposited on an insulating substrate 1 and patterned by photo-etching. After forming an insulating film 3 on the entire surface with silicon oxide SiO 2 , the contact portions 4 and 5 are opened by photoetching (second window).
figure). The contact portions 4 and 5 are then coated with high melting point metal films 6 and 7 (FIG. 3). In other words, molybdenum, tungsten, which does not easily react with silicon,
After depositing titanium, a titanium-tungsten alloy, etc., the parts other than the contact areas are removed by etching. And this high melting point metal film 6, 7
Wirings 8 and 9 made of aluminum are formed from above (FIG. 4).
上述の構成よりなる本発明の薄膜抵抗装置の製
造方法によれば、薄膜抵抗体と配線材のアルミニ
ウムとがコンタクト部分で接触しないので、そこ
での反応が抑えられ、高精度の薄膜抵抗装置を再
現性よく製造することができる。
According to the method for manufacturing a thin film resistor device of the present invention having the above-described configuration, since the thin film resistor and the aluminum wiring material do not come into contact at the contact portion, the reaction there is suppressed and a highly accurate thin film resistor device can be reproduced. It can be easily manufactured.
第１〜第４図は本発明の実施例を製造工程を追
つて示す断面図で、第５図は従来例の断面図であ
る。
１……絶縁基板、２……薄膜抵抗体、３……絶
縁膜、４……コンタクト部分、５……コンタクト
部分、６……高融点金属膜、７……高融点金属
膜、８……配線、９……配線。
1 to 4 are cross-sectional views showing the manufacturing process of an embodiment of the present invention, and FIG. 5 is a cross-sectional view of a conventional example. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Thin film resistor, 3... Insulating film, 4... Contact portion, 5... Contact portion, 6... High melting point metal film, 7... High melting point metal film, 8... Wiring, 9...Wiring.
Claims (1)
の上を絶縁膜で被覆した後コンタクト部分をエツ
チングで窓明けし、上記コンタクト部分を高融点
金属膜で被覆した上に配線形成をおこなうことを
特徴とする薄膜抵抗装置の製造方法。 ２ 上記高融点金属はモリブデン、タングステ
ン、チタンまたはチタン・タングステン合金のい
ずれかである特許請求の範囲第１項の薄膜抵抗装
置の製造方法。[Claims] 1. Patterning a thin film resistor on an insulating substrate, covering the pattern with an insulating film, etching the contact area to open a window, coating the contact area with a high melting point metal film, and then forming wiring. 1. A method for manufacturing a thin film resistor device, characterized by forming a thin film resistor device. 2. The method of manufacturing a thin film resistor device according to claim 1, wherein the high melting point metal is molybdenum, tungsten, titanium, or a titanium-tungsten alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59263357A JPS61140104A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59263357A JPS61140104A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61140104A JPS61140104A (en) | 1986-06-27 |
| JPH0133923B2 true JPH0133923B2 (en) | 1989-07-17 |
Family
ID=17388357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59263357A Granted JPS61140104A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140104A (en) |
-
1984
- 1984-12-13 JP JP59263357A patent/JPS61140104A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61140104A (en) | 1986-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4870033A (en) | Method of manufacturing a multilayer electrode containing silicide for a semiconductor device | |
| JPH0133923B2 (en) | ||
| JPS6341238B2 (en) | ||
| JPH01268150A (en) | Semiconductor device | |
| JPS63272064A (en) | Semiconductor device with thin film resistor | |
| JPH03131002A (en) | Resistance temperature sensor | |
| JPS58161344A (en) | Manufacture of semiconductor device | |
| JPH04324673A (en) | Formation of thin film resistance | |
| JPS63281443A (en) | Manufacture of semiconductor device | |
| JP2533088B2 (en) | Method of manufacturing thermal head | |
| JPH0737147B2 (en) | Thermal head and manufacturing method thereof | |
| JPH0334675B2 (en) | ||
| JPH0442537A (en) | Semiconductor device and manufacture thereof | |
| JPS639662B2 (en) | ||
| JPH0114709B2 (en) | ||
| JPS6348200B2 (en) | ||
| JPH023926A (en) | Forming method of wiring | |
| JPS6334957A (en) | Semiconductor device | |
| JPS61137345A (en) | Manufacture of semiconductor device | |
| JPH04264730A (en) | Semiconductor device | |
| JPH01225336A (en) | Manufacture of semiconductor device | |
| JPH02113566A (en) | semiconductor integrated circuit | |
| JPH0740497A (en) | Film structure | |
| JPH03239332A (en) | Manufacture of semiconductor device | |
| JPH05198864A (en) | Magnetoresistive element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |