JPH02177373A - Film solar cell - Google Patents
Film solar cellInfo
- Publication number
- JPH02177373A JPH02177373A JP63330934A JP33093488A JPH02177373A JP H02177373 A JPH02177373 A JP H02177373A JP 63330934 A JP63330934 A JP 63330934A JP 33093488 A JP33093488 A JP 33093488A JP H02177373 A JPH02177373 A JP H02177373A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- solar cell
- polyimide film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は基板として無色透明なポリイミドフィルムを用
い、該基板側から元を入光することVCよって#昂質7
リコンO元劣化を抑制して充電変換効率を向上させると
共に、耐湿信頼性を高め比フィルム太陽電池に関するも
のである。Detailed Description of the Invention <Industrial Application Field> The present invention uses a colorless and transparent polyimide film as a substrate, and allows light to enter from the substrate side.
The present invention relates to a specific film solar cell that suppresses deterioration of the recon O element and improves charge conversion efficiency, and also improves moisture resistance reliability.
〈従来の技術〉
太陽電池としての非晶質シリコン(以丁、&−Stとい
う〕太陽を池は、 tI$−r腕時計などの電子製品
Vcspける内蔵電源、テレビヤラジオなどの外部電源
、at池の放電防止用バクテリーチャ−ジャなどの補助
1E源として汎用されているが、近年薄型電卓ffi帯
用外部越諏とし−CO利用刀・ら。<Conventional technology> Amorphous silicon (referred to as &-St) solar cells can be used as a built-in power source for electronic products such as wristwatches, external power sources for TVs and radios, etc. It is widely used as an auxiliary 1E source such as a bacterial charger for preventing battery discharge, but in recent years it has been used as an external 1E source for thin calculators and FFI bands.
a−8i太陽電池の薄型、@量化が要望さルている。There is a demand for thinner and more quantifiable A-8i solar cells.
このような背景tもとに、 a−8i太陽域池の基板と
して従来のガラス板に代えてアルミ板fステンレス板な
どが検討されているが、エフ#盤化、軽量化2よびフレ
キシブル化を付与することができることから高分子フィ
ルム基板がM1視さnている。このような該高分子フィ
ルム基板としては。Against this background, aluminum plates and stainless steel plates are being considered in place of conventional glass plates as substrates for A-8I solar ponds, but it is important to use F# panels, weight reduction, and flexibility. Since it can be applied, the polymer film substrate is considered M1. As such a polymer film substrate.
耐熱性が要求されるので0通常、カプトンに代表される
ポリイミドフィルムが便用されている。Since heat resistance is required, polyimide films such as Kapton are usually used.
ところが上記のようなポリイミドフィルムに光透過性に
欠けるため、ポリイミドフィルムtl−a −8i太陽
電池の基板として用いる場合には第2囚のような構成と
する必要がるる。つまり、ポリイミド基板l上に金属電
極2t−形成し、その上にp型a −8ICP)m)3
. 真性a−81(i )−)4.nff1a −
8i (n/−) 5を順次積層し、<の上に透明電憔
6を形成し、さらVC表面保護のために透明樹脂層7を
設けるといり構成となる。そして、fri透明樹脂ノー
側から入り、 a−8N中倉nノー→2−→pleaの
順で元が通っていくことVCなる。この光の透通順序r
i従来のガラス板基板の場合と反対になり。However, since the polyimide film described above lacks light transmittance, when the polyimide film is used as a substrate for a tl-a-8i solar cell, it is necessary to have a structure like the second case. That is, a metal electrode 2t- is formed on a polyimide substrate l, and a p-type a-8ICP)m)3
.. Intrinsic a-81(i)-)4. nff1a −
8i (n/-) 5 are sequentially laminated, a transparent electrode 6 is formed on the VC, and a transparent resin layer 7 is further provided to protect the VC surface. Then, entering from the fri transparent resin no side, the original goes in the order of a-8N Nakakura n no → 2- → plea, which becomes VC. The transmission order of this light r
iThis is the opposite of the case with conventional glass plate substrates.
充電変換効率の点で好ましくなく、tた胆〜Stの光劣
化が大きくなりIC頼性に欠けることが知ら几ている。It is known that this is unfavorable in terms of charge conversion efficiency, and that the photodeterioration of t-St becomes large, resulting in a lack of IC reliability.
−万、ig2図V′cおいてa−8i層の形成順序を逆
にして、尤の入る順序をP /m→XJil→n膚とす
る試みもなされているが、この場合にはa−8tの膜質
を低下させ満足する特性が得られないのである。An attempt has also been made to reverse the formation order of the a-8i layer in ig2 figure V'c and make the likely order P/m→XJil→n, but in this case, a- The quality of the 8t film deteriorates and satisfactory characteristics cannot be obtained.
従って1通常のポリイミド基板を用いる場合には、該基
板が光透過性に乏しいため1ζ、基板側から元を入1す
ることはできず反対側から入nでいる。Therefore, when a normal polyimide substrate is used, since the substrate has poor light transmittance, it is not possible to input the element from the substrate side, and the element must be input from the opposite side.
このような元の入iL万を−rる九めに、に述し比よう
に光電変換効率および光劣化VC関して満足する特注が
得られていないのが現状である。Ninthly, the current situation is that no custom-made product has been obtained that satisfies the photoelectric conversion efficiency and photodegradation of VC as described above.
そこで無色−i!!明なポリイミドフィルムia −8
1太陽成池の基板として用い、@3図に示すような構成
が考えられる。つまり、無色透明ポリイミド基板8上に
遭明逓極6を形成し、(の上にplll 。So colorless-i! ! clear polyimide film ia-8
It is possible to use it as a substrate for a single-solar pond, and have a configuration as shown in Figure @3. In other words, the exposure electrode 6 is formed on the colorless transparent polyimide substrate 8, and the pll is placed on top of it.
j)−8nI−を順&m1illlL、その上に金sw
t極2を形成し、さらに保d6El脂1119 t−設
ける。という構成となる。元は透明ポリイミド基板側か
ら入り。j) -8nI- in order&m1illllL, gold sw on top of it
A t-pole 2 is formed, and a t-pole 1119 is further provided. The structure is as follows. Originally entered from the transparent polyimide substrate side.
a−81膚ではp )14−$ i層→n膚の順で元が
通っていくことになる。この光の通過順序は従来のガラ
ス板基板の場合と全く同じで69.これによって第2図
の構成0a−8i太陽電池に2いて問題でめつ次元電変
換効率の低下−′Pa−81の光劣化がなくなり、ガラ
ス基板に匹敵する性能を持ったフレキクプルなフィルム
太陽電池を得ることが可能となるのでるる。In the a-81 skin, the origin goes in the order of p ) 14-$ i layer → n skin. The order in which this light passes is exactly the same as in the case of a conventional glass plate substrate. This eliminates the photodeterioration of the 0a-8i solar cell shown in Figure 2, which causes a decrease in dielectric conversion efficiency, and creates a flexible film solar cell with performance comparable to that of a glass substrate. It becomes possible to obtain .
〈発明が解決しよプとする課題〉
しかし、J:記のような無色透明なポリイミドフィルム
基板を用いた太陽電池において、ボリイばドフィルムの
耐湿性が充分でない之めに、高温高湿、高圧下のような
苛酷条件丁、では太陽電池の捜期信頼性に問題が生じる
。<Problems to be solved by the invention> However, in a solar cell using a colorless and transparent polyimide film substrate as described in J. Under harsh conditions, such as under high pressure, problems arise in the reliability of solar cells.
このような問題点を解決する手段として、エポキシ樹脂
のような耐湿性に優れる樹脂にてポリイずドフイルム表
面をRelする方法が考えられる。As a means to solve such problems, a method of RELing the surface of the polyimide film with a resin having excellent moisture resistance such as an epoxy resin can be considered.
しかし、エポキシ樹脂は硬化に伴なうljt色を避ける
之めに、比較的低温(例えび100℃程度)で後時間(
例えば6時間程度)のフィルム化工程が必要となジ1作
菓性の恩で非常に問題となる。、ま九。However, in order to avoid the ljt color that accompanies curing, epoxy resin is cured at a relatively low temperature (for example, about 100°C) for a long time (
This is a serious problem due to the difficulty in making confectionery, which requires a film forming process of about 6 hours (for example, about 6 hours). , maku.
経日変化での着色の問題も生じ8光電変換効率に悪影4
i#を及ぼす恐れがろる。There is also the problem of coloring due to changes over time 8 It has a negative impact on photoelectric conversion efficiency 4
There is a fear that it will cause i#.
〈課題を解決するための中段〉
そこで本発明者らに、無色透明なポリイミドフィルムの
耐湿保讃膚について検討を[Q7’j結果、持運のフッ
素樹脂ノーを設けることによって、太陽電池としてのf
i罷を阻害することなく耐湿fl頼性を高めうることを
見い出し1本発明r完成するに至り之。<Middle stage for solving the problem> Therefore, the present inventors investigated the moisture-resistant and moisturizing skin of a colorless and transparent polyimide film [Q7'j As a result, by providing a fluorine resin no. f
We have discovered that moisture resistance can be improved without impairing scratches, and have now completed the present invention.
即ち1本発明は無色透明なポリイミドフィルム基板の片
面に光電変換素子を設けると共に、他面VC厚み5〜3
00μ鴨のf、xM過過性フッ素樹脂金設けてなるフィ
ルム太陽電池t−提供するものである。That is, 1 the present invention provides a photoelectric conversion element on one side of a colorless and transparent polyimide film substrate, and a VC thickness of 5 to 3 on the other side.
The present invention provides a film solar cell made of 00 μm f, xM permeable fluororesin gold.
本発明のフィルム太陽電池の基板として用いるボリイば
ドフイルムは、充電変換菓子の変換効率向上の点から無
色透明のものを採用する。フィルムの厚みd光線透通卓
、変換効率VC影響を及ぼす几め、好ましくはIL)−
1LILJμ観の範囲VCC調子る。A transparent and colorless film is used as the substrate for the film solar cell of the present invention in order to improve the conversion efficiency of the charge conversion confectionery. Thickness of film d Light transmission table, conversion efficiency VC (preferably IL) -
1LILJμ range VCC condition.
10μ鴨に一次ないと機械的強度が不充分であると共に
、フィルム作製時にピンホールか生じ千すくなるなど、
I′I1m性の点で好ましくなく、ま几ILIOμS
を超える厚みでは光線透過率が低下して変換動′4を悪
化させ九〇、フィルムが柔軟性に乏しくなり好箇しくな
い。If the film does not have a primary thickness of 10μ, the mechanical strength will be insufficient, and pinholes will occur during film production, resulting in poor quality.
It is unfavorable in terms of I'I1m property, and it is
If the thickness exceeds 90, the light transmittance will decrease, the conversion behavior will deteriorate, and the film will become less flexible, which is not desirable.
上記ポリイミドフィルムは無色透明であるが。The above polyimide film is colorless and transparent.
本発明では厚さ50μmのときの全光M透過卓が80%
以上、イエローネスイ/デツクスが25以Fのものが元
を変換効率の点から好適に用いられる。In the present invention, the total light M transmittance is 80% when the thickness is 50 μm.
As mentioned above, those having a yellowness index of 25 or higher are preferably used from the viewpoint of conversion efficiency.
このような無色透明なポリイミドフィルムは。This is a colorless and transparent polyimide film.
下記一般式。General formula below.
μバーフルオa基を言ひメタfill侠νよびバラ1屓
である2モ4核体成分である。)
で示2!ILる繰り返し準位をイするボリイばドを主成
分とするものが採用され、このようなポリイミドは代表
的には芳香族テトラカルボン酸二無水物と芳香族ジアミ
ンとの反応によって得ることができる。The μ barfluor a group is a dimorphonuclear component, which is a meta filler ν and a bara 1 group. ) Shows 2! A polyimide whose main component is a polyimide having a repeating level of IL is used, and such a polyimide can typically be obtained by a reaction between an aromatic tetracarboxylic dianhydride and an aromatic diamine. .
上記Kjff族ナトラカルボン酸二燕水物としては。The above-mentioned Kjff group natracarboxylic acid disulfate hydrate is as follows.
3、 3. 4. 4−ビフェニルテトラカルボン−二
無水(支)、2,3,3,4−ビ7工二ルテトクカルホ
ン酸二無水勿、 3+ ’# 4+ ”−ジフェ
ニルスルホンナト2カルボン酸二無水物、 2. 2
−ビス(3,4−ジカルボキンフェニル)へキ丈フルオ
ログロバンニ無水物が挙げられ、こnらは早強で“りた
ri通官組み合せて用いる。3, 3. 4. 4-biphenyltetracarboxylic dianhydride (support), 2,3,3,4-bi7-dilutetoccarboxylic dianhydride, 3+ '#4+'-diphenylsulfonato dicarboxylic dianhydride, 2.2
-bis(3,4-dicarboquinphenyl)heki-fluoroglobanni anhydride, which are early-strength and used in combination.
”f7t、上dd芳査族シアξンとして芳香族2核体ジ
アミンとしては0m−フェニレンジアミンm−トリレン
ジアミン、4,6−ジメチル−m−フェニレンジアミン
、2,4−ジアミノメシチレン4−クロロ−m−フェニ
レンジ7Zン 3,5−ジアミノ安り香酸、5−ニトロ
−m−フェニレンシアi7などが挙げらf’Lる。芳香
族2核体ジアミンとしてd、3.3−シアεノジフェニ
ルエーテ/L/ 3. 3’−ジアミノジフェニルス
ルホン、3゜3′−シアばノジフェニルスルホキシド、
3. 3’−シアミノジフェニルスルフィ)’、
3. 3’−ジアミノジフェニルメタン、3.3’−
ジアミノベンゾフェノン、3.3’−ジアミノビフェニ
ル、2.2−ビス(3−アミノフェノキシ〕ヘキ丈フル
オログロパ7,2.2−ビス(4−アミノフェノキ/)
へキサフルオロプロパンなどが挙げら2する。芳香族3
核体ジアミンとしては、l、4−ビス(3−アミノフエ
ノ千シ)ベンゼン、l、3−ビス(3−アミノフェノキ
シ)ベンゼン、l、4−ビス(3−アミノフェニル)ヘ
ンゼア、1.3−ビス(3−アミノフェニル)ベンゼン
などが挙げられる。芳香族4核体シアイノとし′〔は、
ビス〔4−(3−7ξノフエノキシ)フェニル〕スルホ
ン。"f7t, upper dd aromatic cyanide as aromatic dinuclear diamine: 0 m-phenylene diamine m-tolylene diamine, 4,6-dimethyl-m-phenylene diamine, 2,4-diaminomesitylene 4-chloro Examples include -m-phenylene diamine 3,5-diaminobenzoic acid, 5-nitro-m-phenylenethia i7, etc. As aromatic dinuclear diamines, d, 3,3-thia ε Nodiphenyl ether/L/ 3. 3'-diaminodiphenylsulfone, 3°3'-cyabanodiphenyl sulfoxide,
3. 3'-cyaminodiphenylsulfi)',
3. 3'-diaminodiphenylmethane, 3.3'-
Diaminobenzophenone, 3,3'-diaminobiphenyl, 2,2-bis(3-aminophenoxy)hexafluoroglopa 7,2,2-bis(4-aminophenoxy/)
Examples include hexafluoropropane. aromatic 3
Examples of nuclear diamines include l,4-bis(3-aminophenol)benzene, l,3-bis(3-aminophenoxy)benzene, l,4-bis(3-aminophenyl)henzea, and 1.3-bis(3-aminophenyl)benzene. Examples include bis(3-aminophenyl)benzene. Aromatic tetranuclear cyano
Bis[4-(3-7ξnophenoxy)phenyl]sulfone.
ビス(4−(3−アミノフェノキシ)フェニル〕エーテ
ル、4.4’−ビス(3−アミノフェノキシ)ビフェニ
ル、2,2−ビス(4−(3−アずノフェノ牛り)フェ
ニル〕クロパン、2. 2−ビス(4−(3−アミノフ
ェノキン)フェニル〕へキサフルオロプロパン 2.
2−1:’ス(4−(4−アミノフェノキン)フェニル
〕へキサフルオロプロパンなどが挙げられる。これらは
単独で[11適宜組み合せて用いることができる。Bis(4-(3-aminophenoxy)phenyl)ether, 4.4'-bis(3-aminophenoxy)biphenyl, 2,2-bis(4-(3-azunophenoxy)phenyl)clopane, 2 .2-bis(4-(3-aminophenoquine)phenyl]hexafluoropropane 2.
2-1:'s(4-(4-aminophenoquine)phenyl)hexafluoropropane, etc. These can be used alone or in appropriate combinations.
上記成分から傅らnるポリイミドは前記全九巌透過率2
工びイエローネスインデックスt−有する#色透明なも
のでおり、フィルム形成用組成物中東なくとも80モル
%以上、好ましくr!、95モル%以上含臂することが
好ましい6従って1本発明では全光M1透過率ヤイエロ
ーネスインデックスの値に2いて光電変換効率を著しく
低下させない範囲で他の芳香族テトラカルボン酸二無水
@spよび芳香族ジアミンからなるポリイミドフィルム
することができる。The polyimide made from the above components has a total transmittance of 2.
The film-forming composition is transparent and has a yellowness index of t-, with a content of at least 80 mol%, preferably r! Therefore, in the present invention, other aromatic tetracarboxylic dianhydrides are preferably included within the range of total light M1 transmittance and yellowness index value 2 and do not significantly reduce photoelectric conversion efficiency. A polyimide film made of sp and aromatic diamine can be used.
このような芳香族テトラカルボン酸二無水物としては、
ピロメリット酸二無水物、3.3’−ベンゾフェノンテ
トラカルボン酸二無水俤、4,4−オキシシフタル酸二
無水物、4,4−ビス(3゜4−ジカルボ中7フエノキ
7)ジフェニルスルホンニ無水物、 2. 3. 6.
7−ナフタレンテトラカルボン酸二無水萄、 l、
2. 5. 6−ナフタレンテトラカルボン酸二無
水物、l、4,5.8−ナフタレンテトラカルボン酸二
無水物などが挙げられ、こ几らは単独でま7?1.は併
ぜて用いることができる。“17t、他の芳香族ジアミ
ンとしては、p−フェニレンジアミン、2,5−トリレ
ンジアミン、ベンジジン、3.3’−ジメチルベンジジ
ン。As such aromatic tetracarboxylic dianhydride,
Pyromellitic dianhydride, 3,3'-benzophenonetetracarboxylic dianhydride, 4,4-oxycyphthalic dianhydride, 4,4-bis(3゜4-dicarbo7) diphenylsulfone dianhydride things, 2. 3. 6.
7-naphthalenetetracarboxylic dianhydride, l,
2. 5. Examples include 6-naphthalenetetracarboxylic dianhydride, 4,5.8-naphthalenetetracarboxylic dianhydride, and the like. can be used together. "17t, Other aromatic diamines include p-phenylenediamine, 2,5-tolylenediamine, benzidine, and 3,3'-dimethylbenzidine.
4.4−7アミノジフエニルエーテル、3.4−ジアミ
ノジフェニルエーテル、4.4−シアイノジフェニルス
ルホンs 4,4−シア</ジフェニルスルホキ7ド、
4,4−7アミノジフエニルスルフイド、4.4’−ジ
アミノジフェニルメタン。4,4-7 aminodiphenyl ether, 3,4-diaminodiphenyl ether, 4,4-cyainodiphenylsulfone s 4,4-cya</diphenylsulfokide,
4,4-7 aminodiphenyl sulfide, 4,4'-diaminodiphenylmethane.
4.4−シアミノベンゾフェノン。2,2−ビス(4ア
ミノフエニル)グロバン 3,3−シyiトキ7〜4,
4−ジアミノジフェニルメタン 3゜3−ジメチル−4
,4−ジアミノジフェニルメタン、l、4−ビス(4−
7ミノフエノキ7)ベンゼン 4,4′−ジアミノター
フェニル ビス〔4−(3−アばノフエノキクンフェニ
ル」スルホンビス−(4−(4−アミノフェノキ7)フ
ェニル〕エーテル 4,4−ビス(4−アミノフェノキ
シ)ビフェニル 2,2−ビス(4−(4−アずノフエ
ノキ7)フェニル]グロバンなどが挙げられ。4.4-cyaminobenzophenone. 2,2-bis(4aminophenyl)globan 3,3-cyyitoki7-4,
4-diaminodiphenylmethane 3゜3-dimethyl-4
,4-diaminodiphenylmethane,l,4-bis(4-
7 Minophenoki 7) Benzene 4,4'-Diaminoterphenyl bis[4-(3-Abanophenokicumphenyl] sulfone bis-(4-(4-aminophenoki7)phenyl) ether 4,4-bis(4- Examples include aminophenoxy)biphenyl 2,2-bis(4-(4-azunophenoxy7)phenyl)globan.
こnらは単独で筐九は併せて用いることができる。These can be used alone or in combination with Chikyu.
本発明のフィルム太陽電池の基板となるボリイぐドフイ
ルムは1例えば以下の方法によって製造する。The polyimized film serving as the substrate of the film solar cell of the present invention is manufactured, for example, by the following method.
上[l己の芳香族テトラカルボン酸二無水物および芳香
族シアずンをM機#媒中rCて、80℃以下(D温度で
反応させることVCよりポリアミド酸を合成し。Polyamic acid is synthesized from VC by reacting aromatic tetracarboxylic dianhydride and aromatic cyanide in a medium of M at 80° C. or lower (temperature D).
このポリアミド#ll溶液倉用いて所望の形状の賦型体
倉形成し、空気中、不活性ガス中筒7tは真空中にて、
50〜350℃のuM度条件下でM機浴媒を除去すると
同時にポリアミド酸を脱水閉環してポリイミドを合成す
る、fた。上記ポリアミド酸を無水n酸/ビリンン混合
浴液中に皮膚して脱醪媒とイミド化ellfJ時に行う
化学イオド化法f、ポリアミド酸r簀浴媒中に再沈し゛
(JIL離し、七の恢加熱めるいに化学的lイミド化に
よV脱水閉環してボリイばドとすることもizJ能であ
る。さらに、ポリアミド酸溶液を七の1まl u u−
c以上に加熱してイミド化することもできる。得られる
ポリイミドが反応d媒に対し゛C#4解注がない場合に
は沈澱物として単離してくるが、d解!1:がめる場合
にはぞのま筐m液状でめるため、ポリアミド酸の場合の
ように質層媒中に丹沈して単一するか、またはポリイミ
ド溶液を所望の形状の賦型体を形成し、空気中、不活性
ガス中ま之に輿望中で、50〜200 vの温度条件下
で有機6媒を除去することにより得ることもできる。再
沈して単離する場合には鑵過虎争が必要である。This polyamide #ll solution tank is used to form a molding body into a desired shape, and the cylinder 7t is placed in air and inert gas in a vacuum.
Polyimide was synthesized by removing the M bath medium and simultaneously dehydrating and ring-closing the polyamic acid under uM conditions of 50 to 350°C. The above polyamic acid was immersed in an anhydrous n-acid/biline mixed bath solution, and the chemical iodization method was carried out during imidization with a demulcent medium. It is also possible to perform V dehydration and ring closure by heating and chemical imidization to form a bolybide.Furthermore, it is possible to convert the polyamic acid solution into a polyimide solution.
It can also be imidized by heating above c. If the resulting polyimide does not have C#4 dissolved in the reaction medium, it will be isolated as a precipitate; 1: When using a polyimide solution, it is mixed in liquid form, so it is either precipitated in a solid medium as in the case of polyamic acid to form a single product, or the polyimide solution is molded into a desired shape. It can also be obtained by removing the organic hexagonal medium under a temperature condition of 50 to 200 V in air or under an inert gas. If it is to be isolated by re-sedimentation, it is necessary to take a lot of precautions.
上記の有機浴媒とし′CはN、N−ジメチルホルムアミ
ド、N、N−ジメチルアセトアミド、ジグライム トリ
グライム、クレゾール、ハロゲン化フェノール メチル
セロノルジアセテート。ジオキサン、テトラヒドロフラ
ンなどが好適でめるが。The above organic bath medium is N,N-dimethylformamide, N,N-dimethylacetamide, diglyme, triglyme, cresol, halogenated phenol methyl celonoldiacetate. Dioxane, tetrahydrofuran, etc. are suitable.
待にN、N−ジメチルアセトアミドが好ましい。N,N-dimethylacetamide is particularly preferred.
これらのM機d媒は単独で用いてもよいし、筐之ri2
撞以上を混廿して用いてもよい。これらの有機暦媒は比
較的S点が低いため、刀口熱にLるイミド化のvAvc
分解してその分解物がポリイミド中に残留して着色の原
因になるといりた問題が起こらないのである。ポリイミ
ドの直置m媒としてよく用いられているd媒にN−メチ
ル−2−ピロリドンがあるが、この#[は高温に、7I
O熱されると分解し、その分解*がボリイずと中に残存
して1色の原因となることが知られている几め好ましく
ない。These M machine d media may be used alone, or
More than one may be used in combination. These organic media have a relatively low S point, so the vAvc of imidization that is low in sword heat
This eliminates the problem of decomposition products remaining in the polyimide and causing coloration. N-methyl-2-pyrrolidone is a d-medium that is often used as an m-medium for polyimide.
It is known that it decomposes when heated, and the decomposition* remains in the liquid and causes one color, which is undesirable.
なお、に記に例示した好適なM機m媒を開用する際に、
エタノール、トルエン、ベンゼン、キシレン ニトロベ
ンゼンなどのsmi、ポリイミドフィルムの無色透明性
?損なわない程度に一撫または二珈以上適宜混合して用
いてもよい。In addition, when using the suitable M machine medium illustrated in the following,
smi such as ethanol, toluene, benzene, xylene and nitrobenzene, colorless transparency of polyimide film? They may be mixed together in one stroke or two or more as long as they are not damaged.
上記のよ5に、無色透明なボリイくドフィルム金製造す
る際には、ポリアミド酸の対数粘度(N。As described in 5 above, when producing colorless and transparent polyamide film gold, the logarithmic viscosity (N) of polyamic acid is
N−ジメチルアセトアミド中0−59/dHQs1度に
て30゛Cでrj4定)が、 0.5〜5.tlの範囲
になるよりに調蚕するのが!Ifましい。待に好適なの
りよ0.7〜3.0である。この対数粘度7:Ii低す
ぎると得らnるポリイミドフィルムの機械的強度が低下
するため好筐しくない、iた逆に対数粘度が高すぎると
ポリアミド酸m液を適当な形状に賦形する際に流延させ
にくくなる。ポリアミド酸m液の濃度も1作業性の観点
から5〜40直菫%、好ましくに15〜30直量%に設
定することが菫ましい。0-59/dHQs in N-dimethylacetamide (rj4 constant at 30°C at 1 degree) is 0.5-5. It is better to prepare silkworms than to be within the tl range! If so. The adhesiveness is preferably 0.7 to 3.0 for long-term use. If the logarithmic viscosity is too low, the mechanical strength of the resulting polyimide film will decrease, which is not desirable; on the other hand, if the logarithmic viscosity is too high, it will be difficult to shape the polyamic acid solution into an appropriate shape. This makes it difficult to spread. It is advisable to set the concentration of the polyamic acid m solution to 5 to 40% by volume, preferably 15 to 30% by volume from the viewpoint of workability.
なお、上記対数粘度は次式で計算さルるものでめり1式
中の時間は毛細管粘度計に工り[疋されるものである。The above logarithmic viscosity is calculated using the following formula, and the time in the formula is calculated using a capillary viscometer.
このようにしてポリアミド酸金イミド化してポリ・イミ
ドとする場合において、生成ポリイミドは特性の点から
対数粘度(97%硫酸中0.5p/dlの濃度で3u℃
で1定)t−0,5〜5.0の範囲内に設定するのが好
ましい。Mtも好筐しいのは0.7〜3.0である。When polyamide acid is converted into gold imide to form polyimide in this way, the resulting polyimide has a logarithmic viscosity (3 u℃ at a concentration of 0.5 p/dl in 97% sulfuric acid) from the viewpoint of properties.
(1 constant) It is preferable to set it within the range of t-0.5 to 5.0. A good Mt range is 0.7 to 3.0.
このようにして得られ友ボリアずド##71廓面Vζ仕
上けられた支持体上に一定の厚みになるように流延し、
50〜350Qの温度で除々1c)JD熱して脱醪媒と
説水閉域金促進し、ポリアミド酸をイミド化してポリイ
ミドフィルムが得らnる。ポリアミド酸m液からポリイ
ミドフィルム形成における有機溶媒の除去およびイミド
化のための加熱工程は真空’F(M圧下)′!九は不活
性ガス雰囲気下で行なっても!<、ま几短#I#間でお
れば400℃罰後までさらに加熱することによt)得ら
れるポリイミドフィルムの特注を向土させることも可能
である。The thus obtained material was cast to a constant thickness on a support with a Vζ finished surface.
At a temperature of 50 to 350 Q, gradually 1c) JD heat is applied to promote the demulsification medium and water extrusion, and the polyamic acid is imidized to obtain a polyimide film. The heating process for removing the organic solvent and imidizing the polyimide film from the polyamic acid solution is performed under vacuum 'F (under M pressure)'! Even if 9 is done under an inert gas atmosphere! If the temperature is between 1 and 2, it is also possible to further heat the resulting polyimide film to 400° C. to make a custom-made polyimide film.
また、ポリイミドm液を用いる場合も前記と同様rζ支
持体上VCポリイミド纏液を一定の厚みになる工9に流
延し、50〜2υO℃の温度で刀n熱して溶媒を除去す
ることにより得ることができる。このような脱溶媒の九
めの加熱工程riA窒ド(減圧下)ま7?1.は不活性
ガス雰囲気下で行なってもよい。In addition, when using polyimide m liquid, the VC polyimide liquid is cast onto the rζ support in the same manner as described above, and the solvent is removed by heating at a temperature of 50 to 2υO°C. Obtainable. The ninth heating step of such desolvation riA nitride (under reduced pressure) 7?1. may be carried out under an inert gas atmosphere.
以上のようVこして得られる無色透明なポリイミドフィ
ルムを基板に用いてフィルム太mF!を池?得るには1
例えば以下の工程に従がう。Using the colorless and transparent polyimide film obtained by V straining as described above as a substrate, the film thickness is mF! Pond? To get 1
For example, follow the steps below.
まず第1の工程としてS色透明なポリイミドフィルム基
板上VC透明電極を形成する。これにはインジウム−ス
ズ酸化膜(通称I″rO慎と云う)が好適に用いられる
が、族4法またはスパッタリング法VCより形成するこ
とができる。該透明電極の厚みとしては0.01〜1.
Llμmとするのが好筐しく。First, as a first step, a VC transparent electrode is formed on an S-color transparent polyimide film substrate. An indium-tin oxide film (commonly known as I″rO film) is suitably used for this, but it can be formed by the Group 4 method or the sputtering method VC.The thickness of the transparent electrode is 0.01 to 1 ..
It is preferable to set it to Llμm.
0.01μ噂禾膚では所望の4区性が得られず、逆に1
.0μ層を超えると透明′庖極O透明性がfMlわ几る
几めに好゛ましくない。The desired 4-section property could not be obtained with 0.01μ rumored skin; on the contrary, 1
.. If the layer exceeds 0μ, the transparency decreases by fMl, which is undesirable.
第2の工程として上記透明11L極上に元嵐変侠素子と
なるa−811謔?形成する。a−8i膚としてはp形
→i形→n形の順序で堆積してなるa−8i薄膜の他に
、p形a−8iC(非晶質炭化珪素)→i形a−8t−
+n形JL−8iの順序で堆積してなるa−8l薄膜な
ど6植のもの倉用いることができる。As the second step, the A-811 song, which becomes the former Arashi Hentai element, is added to the transparent 11L best. Form. In addition to the a-8i thin film deposited in the order of p-type → i-type → n-type, p-type a-8iC (amorphous silicon carbide) → i-type a-8t-
Six types of a-8l thin films deposited in the order of +n-type JL-8i can be used.
これらのa−81の堆積方法としては、スパッタリング
法、グロー放電性1元CVD法、イオンブレーティング
法などの各種の方法がるる。There are various methods for depositing the a-81, such as sputtering, glow discharge one-component CVD, and ion blating.
例えば、グロー放電の場合は温度200〜300℃に加
熱され九基板ホルダーVC0透明電他を形成し之無巴透
明なポリイミドフィルム基板を保持させ。For example, in the case of glow discharge, it is heated to a temperature of 200-300°C to form a nine-substrate holder VC0 transparent conductor, which holds a transparent polyimide film substrate.
該基板ホルダーを一万の電極とし、これに対する対極と
の間VC13,56MHz(Q高周波電力を供給する・
例えばp形a−8i#11!ijを形成するにはシラン
にジボラン(、Bz)(a)k導入し、n形a−8j薄
5Ct−形成するVCはシランにホスフィンCPH5)
k4人Tればよい。な2.上記a−8l博膜とは、水素
化a−8iとフッ素化a−8ik云う。The substrate holder has 10,000 electrodes, and a VC of 13,56 MHz (supplying Q high frequency power) is connected to the counter electrode.
For example, p-type a-8i#11! To form ij, introduce diborane (,Bz)(a)k into silane, and form n-type a-8j thin 5Ct-VC into silane with phosphine CPH5).
All you need is 4 people. 2. The above-mentioned a-8l film refers to hydrogenated a-8i and fluorinated a-8ik.
第3CD工程として上記のよりにしC得らfi几a−8
i博膜上rこ金14電極を形成する。この金属成極とし
てはアルミニウム、ニッケル、チタン、クロム、鉄、ス
テンレス、ニッケルクロム合金などが挙げられ、蒸着法
あるいはスパッタリングff1Zどの適宜の方法で形成
することができる。As the 3rd CD step, C obtained by using the above method is fi 几a-8.
14 electrodes are formed on the top of the film. The metal polarization includes aluminum, nickel, titanium, chromium, iron, stainless steel, nickel-chromium alloy, etc., and can be formed by an appropriate method such as vapor deposition or sputtering ff1Z.
W44の工程としてa−8i/mお工び金属電極O保禮
を目的としてJfBJIYIによる裏打ちt行り。この
目的に用いる樹脂としては、耐湿性f柔軟性を育してい
A[特に制限はなく、エポキシ樹脂、ウレタン樹脂、ア
クリル樹脂、ポリイiF′樹脂などを好4に一用いるこ
とかでさる。As part of the W44 process, a-8i/m was fabricated and the metal electrode O was lined with JfBJIYI for the purpose of protection. The resin used for this purpose is not particularly limited, and epoxy resins, urethane resins, acrylic resins, polyiF' resins, etc. are preferably used.
このよりにして得られ之フィルム太陽電Me水中もしく
は有機溶剤中で支持体から剥離し、ポリイミドフィルム
面に元通過性のフッ素樹脂層を設け1本発明のフィルム
太陽電池(第3図参照)が得られる。The film solar cell obtained in this way was peeled from the support in water or an organic solvent, and a permeable fluororesin layer was provided on the polyimide film surface. can get.
本発141jVcて用いらnる光透過性のフッ素樹脂は
。The light-transmitting fluororesin used in the present invention is 141jVc.
2 QQAim厚のjfll状にし几際の光透過率が9
0%以上の値を有し、砥気的持性f化学的特性、熱的特
性において、公知のフッ素樹脂と少なくとも同等の性質
?有するものである。光透過軍が低すぎると。2 QQAim thick jflll shape and the light transmittance at the edge is 9
Has a value of 0% or more, and has properties that are at least equivalent to known fluororesins in terms of abrasive retention, chemical properties, and thermal properties? It is something that you have. When the light transmission force is too low.
基板に用い几無色透明なポリイミドフィルムの透光特注
が光分に発揮できず、太陽電池としての光電変換効率の
低″F1に招き好ましくない。The custom-made colorless and transparent polyimide film used for the substrate cannot be used to effectively absorb light, which is undesirable as it leads to a low photoelectric conversion efficiency of F1 as a solar cell.
このエラな特性を有するフッ素樹脂としては。As a fluororesin with this unique characteristic.
具体的には旭硝子社製、闇品名“サイトツブ6などが挙
げられる。Specifically, examples include "Cytotsubu 6" manufactured by Asahi Glass Co., Ltd. and sold under the black market name.
上記フッ累樹脂金ポリイミドフィルムに設ける方法とし
て1例えば該フッ素樹脂をm剤に解がしtcDち、刷毛
mりする方法、皮膚法8回転塗布法。Methods for applying the fluororesin to the gold polyimide film include, for example, a method in which the fluororesin is dissolved in a m-agent and rubbed with a brush, and a skin method in which 8 rotations are applied.
印刷法などが採用で1!、a膜厚が5〜J1.lOμ馬
となるようvc4痛する。厚みが淳すざると所望の耐湿
効果が得られに〈〈、iた4すざると尤a過4の低下f
柔軟性の低下が生じ針筒しくない。1 for adoption of printing methods, etc.! , a film thickness is 5 to J1. VC4 pain to become lOμ horse. If the thickness is reduced, the desired moisture resistance effect will not be obtained.
The needle barrel becomes unsuitable due to a decrease in flexibility.
〈発明の効果〉
以上のように本発明のフィルム太mt池は、基板の無色
透明なポリイミドフィルムを用いているので、J/、板
側から光線を入れることができ、光電変換効率が亮ます
、゛ま急a−8t/+lC1元劣化も従来のフィルム太
ls区池より少ない。<Effects of the Invention> As described above, since the film thick mt cell of the present invention uses a colorless and transparent polyimide film as a substrate, light can enter from the board side, increasing photoelectric conversion efficiency. , ゛The rapid a-8t/+lC1 element deterioration is also less than that of the conventional film thickness.
′1次、ポリイミドフィルムには特定のM湿保護I−を
設けているので2長期肥用1Cおいでも光分な酎m+ぎ
碩性r有するものである。Since the primary polyimide film is provided with a specific moisture protection material, it has excellent moisture resistance even after long-term fertilization.
く爽4例〉
以下に実N例金示し0本発明全ざらに銭体的に説明する
。4 Examples> The present invention will be explained in detail below using actual examples.
な2.以下の表中に記載の略号は次の化合物上意味する
。2. The abbreviations listed in the table below have meanings for the following compounds.
g−BPDA: 3,3; 4,4−ビフェニルテトラ
カルボン酸二無水物
6Jl’−1)A : 2.2−ビス(3,4−ジカル
ボキシフェニル)ヘキ丈フルオaグロバンニ焦水物3、
3’−BAPS :ビス(4−(3−アζノフエノキシ
〕フェニル〕スルホン
3、3’−DDS :・ビス(3−アミノフェニル)ス
ルホン
実適例1〜;1弓び比較例1〜2
醪媒としてN、 N−ジメチルアセドアjトゲ用いて、
第1表に示し之芳査族シアiンと芳香族ナトラカルボン
酸二無水物ヲ0.2モル、30%l!11度の峰件で室
温′F30時間反応させてポリアミド醒醪液を得た。こ
のポリアミド酸の対数粘[t−0,511/di、 3
u℃で媚ポし次結果を第1表に示し友。このボリアζド
#d液を支持体上に流延して液膜を形成し、熱風循環乾
燥機中でIUfJ℃で乾燥し、残#溶媒量が30%を下
まわり友ところで昇@を開始し、最終的に30tl″G
まで加熱してイミド化反応を完全に行ない、膜厚30μ
鴨の無色透明なポリイミドフィルムを得た。g-BPDA: 3,3; 4,4-biphenyltetracarboxylic dianhydride 6Jl'-1) A: 2,2-bis(3,4-dicarboxyphenyl)hexyl fluoro aglobanni dianhydride 3,
3'-BAPS: Bis(4-(3-Aζnophenoxy)phenyl)sulfone 3,3'-DDS: Bis(3-aminophenyl)sulfone Practical Examples 1-; 1 Comparative Examples 1-2 Moromi Using N,N-dimethylacedothorn as a medium,
0.2 mol, 30% l of the aromatic cyanide and aromatic natracarboxylic dianhydride shown in Table 1! The reaction was carried out at room temperature 'F for 30 hours at a temperature of 11 degrees Celsius to obtain a polyamide fermentation liquid. Logarithmic viscosity of this polyamic acid [t-0,511/di, 3
The results are shown in Table 1. This boria zeta #d solution was cast onto a support to form a liquid film, dried in a hot air circulation dryer at IUfJ℃, and when the amount of remaining #solvent was less than 30%, the heating process was started. and finally 30tl″G
The imidization reaction was completed by heating to a film thickness of 30 μm.
A colorless and transparent polyimide film of duck was obtained.
このようVこして得られたポリイミドフィルムの全光線
透過′42工びイエローネスインデックス(YI)を第
1 表ict#eLe 。The total light transmission and yellowness index (YI) of the polyimide film obtained by such V-filtration are shown in Table 1.
このポリイミドフィルム基板JJ蒸4法により厚みso
u XのI’l’041を性薄膜を設けた後、円部電極
型の高周波(13,56MHz)グロー放電装置内のヒ
ーター付ホルダーに保持し、250′C前後に保ちなが
ら水嵩で10モル%に希釈し九7ランと水石で5000
ppmに希釈し之ジボラン(jhHs ) k m甘
し、グロー放Mt装置内に導入し几。そして、域窒度0
.2 Torrの雰囲気rで1tlo高周波電力を印加
して該基板上にほう1gをドーグした厚み15υAのp
形a−8ij+lllを設けた。続いて上記の氷菓希釈
7ランのみを導入して同様の反応を行ない、ノンドープ
の厚み500UA(DI形a−81ノーを堆積し几。This polyimide film substrate has a thickness of so
After forming a magnetic thin film on I'l'041 of u diluted to 5000% with 97 orchid and suiseki
Diborane (jhHs) was diluted to ppm and introduced into the glow release Mt apparatus. And the area nitrogen degree is 0
.. A film with a thickness of 15 υA was prepared by applying 1 lo high frequency power in an atmosphere of 2 Torr and applying 1 g of heat onto the substrate.
A type a-8ij+llll was provided. Subsequently, the same reaction was carried out by introducing only the 7 runs of diluted ice cream described above, and a non-doped film of 500 UA (DI type A-81) was deposited.
さらに水素希釈シランと水嵩で5000PPm rc希
釈し乏ホスフィン(PHs)Yc混合し、グロー放1を
装置内に導入してリンをドープした5L)OAのn形a
−si +−を設けた。このよう1こしてS色透明なボ
リイミドフィルム基板上に、ITO膜を介してp形。Furthermore, 5000PPm rc diluted with hydrogen-diluted silane and water volume was mixed with poor phosphine (PHs) Yc, and Glow Emission 1 was introduced into the apparatus to dope phosphorus.5L) OA n-type a
−si +− was provided. In this way, a p-type film was placed on a transparent S-colored polyimide film substrate via an ITO film.
i形、n形のa−Si傅腺からなる元′rt変換A子金
形成し之。The element 'rt transformation A-Si metal is formed by i-type and n-type a-Si glands.
続い−C1こIL i真空蒸看裂置内に保持し、常法の
蒸4法によV厚み0.1μ鶴のアルミニウム導電性4膜
を堆積した。Subsequently, C1 was held in a vacuum evaporator, and an aluminum conductive film having a thickness of 0.1 μm was deposited by a conventional evaporation method.
次にfc置から賊り出し之後、裏打ち材としてエボキ7
樹脂を用いてアルミIt極とに厚み50μ慣でコーティ
ングして保護し次。Next, after stealing from the FC location, Eboki 7 was used as a backing material.
Next, protect the aluminum It electrode by coating it with a resin to a thickness of 50 μm.
次いで、支持体から太陽電池金剥離し、ポリイミドフィ
ルム面にM剤でmかし之透明フッ素m脂(旭硝子社袈1
丈イトツブ)を第1表に示し次乾膜厚となるように印刷
し、1(JLl’CT乾燥させてフィルム太m1it池
を作製し友。Next, the solar cell gold was peeled off from the support, and the surface of the polyimide film was coated with transparent fluorine resin (Asahi Glass Co., Ltd.
Print a film with a dry film thickness as shown in Table 1, and dry it to make a thick film.
得られfcフィルム太太陽電池0竃電変換効卓AM f
+ l OU m W/eAのンーラーシミュレータ
ーで無色透明なポリイミドフィルム基板側から元を照射
して1定し、結果を第1表Vこ示し比。fた。65℃/
95%R,H0X5(70時間の耐湿性試験を行なった
のちに、再び光電変換効率を測定し、その低下4t−第
1表に併記し几。Obtained fc film thick solar cell 0 electric conversion effect AM f
The source was irradiated from the colorless and transparent polyimide film substrate side using a heating simulator of + 1 OU m W/eA to a constant constant, and the results are shown in Table 1. It was. 65℃/
95% R, HO
比較例3
実施例IGcj?いてフッ木槌b’dim’を設けなか
っ友以外は同様にしてフィルム太#IE池を作表した。Comparative Example 3 Example IGcj? I plotted the film thick #IE pond in the same way except for my friend who did not set up the foot mallet b'dim'.
以ド余臼
第1表より明らかなように1本発明品は優れ九耐湿性を
有するものでるる。As is clear from Table 1, the products of the present invention have excellent moisture resistance.
第1図は本発明のフィルム太陽電池の断囲図。
第2図および第3図は従来のフィルム太陽゛畦池の11
1図を示す。
1.8・・・ポリイミド基板、 2・・・金属峨極3
〜5・・・a−Sii−16・・・透明逗極、 9・
・・保に曖 耐力「 、 l O・・・ 〕
ツlA du 刀旨特許田願人
日釆電工株式会社
代表者 謙 居 五 朗FIG. 1 is a cross-sectional view of the film solar cell of the present invention. Figures 2 and 3 show 11 of conventional film solar ridges.
Figure 1 is shown. 1.8...Polyimide substrate, 2...Metal electrode 3
~5...a-Sii-16...Transparent polarization, 9.
・.......................
TsulAdu Sword Patent Taganjin Nichijo Denko Co., Ltd. Representative Ken Igoro
Claims (3)
変換素子を設けると共に、他面に厚み5〜300μmの
光透過性フッ素樹脂層を設けてなるフィルム太陽電池。(1) A film solar cell in which a photoelectric conversion element is provided on one side of a colorless and transparent polyimide film substrate, and a light-transmitting fluororesin layer with a thickness of 5 to 300 μm is provided on the other side.
線透過率80%以上、イエローネスインデックス25以
下である請求項(1)記載のフィルム太陽電池。(2) The film solar cell according to claim 1, wherein the polyimide film has a total light transmittance of 80% or more and a yellowness index of 25 or less when the thickness is 50 μm.
2は窒素原子に結合している芳香核がメタ置換である1
〜4核体成分、またはパーフルオロ基を含むメタ置換お
よびパラ置換である2〜4核体成分である。) で示される繰り返し単位を有するポリイミドを主成分と
するフィルムである請求項(1)記載のフィルム太陽電
池。(3) Polyimide film has a general formula, ▲There are mathematical formulas, chemical formulas, tables, etc.▼ However, R_1 is ▲There are mathematical formulas, chemical formulas, tables, etc.▼ or ▲There are mathematical formulas, chemical formulas, tables, etc.▼, and R_
2 is 1 in which the aromatic nucleus bonded to the nitrogen atom is meta-substituted
˜4-tetranuclear components, or meta- and para-substituted di- to tetranuclear components containing perfluoro groups. The film solar cell according to claim 1, which is a film mainly composed of polyimide having a repeating unit represented by the following formula.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63330934A JPH02177373A (en) | 1988-12-27 | 1988-12-27 | Film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63330934A JPH02177373A (en) | 1988-12-27 | 1988-12-27 | Film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02177373A true JPH02177373A (en) | 1990-07-10 |
Family
ID=18238068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63330934A Pending JPH02177373A (en) | 1988-12-27 | 1988-12-27 | Film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02177373A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479449U (en) * | 1990-11-22 | 1992-07-10 | ||
| JPH04334072A (en) * | 1991-05-10 | 1992-11-20 | Sharp Corp | Photo coupler and its manufacture |
| JPH0641305A (en) * | 1991-10-25 | 1994-02-15 | Internatl Business Mach Corp <Ibm> | Polyamic acid and polyimide from fluorinated reactant |
| US5597422A (en) * | 1994-04-30 | 1997-01-28 | Canon Kabushiki Kaisha | Light-transmissive resin sealed semiconductor and production process thereof |
| JPH10310639A (en) * | 1997-05-09 | 1998-11-24 | Ube Ind Ltd | Colorless and transparent polyimide and its production method |
-
1988
- 1988-12-27 JP JP63330934A patent/JPH02177373A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479449U (en) * | 1990-11-22 | 1992-07-10 | ||
| JPH04334072A (en) * | 1991-05-10 | 1992-11-20 | Sharp Corp | Photo coupler and its manufacture |
| JPH0641305A (en) * | 1991-10-25 | 1994-02-15 | Internatl Business Mach Corp <Ibm> | Polyamic acid and polyimide from fluorinated reactant |
| JPH07233325A (en) * | 1991-10-25 | 1995-09-05 | Internatl Business Mach Corp <Ibm> | Radiation-reactive composition |
| US5780199A (en) * | 1991-10-25 | 1998-07-14 | International Business Machines Corporation | Polyamic acid and polyimide from fluorinated reactant |
| US5597422A (en) * | 1994-04-30 | 1997-01-28 | Canon Kabushiki Kaisha | Light-transmissive resin sealed semiconductor and production process thereof |
| JPH10310639A (en) * | 1997-05-09 | 1998-11-24 | Ube Ind Ltd | Colorless and transparent polyimide and its production method |
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