JPH0237646B2 - - Google Patents
Info
- Publication number
- JPH0237646B2 JPH0237646B2 JP56188800A JP18880081A JPH0237646B2 JP H0237646 B2 JPH0237646 B2 JP H0237646B2 JP 56188800 A JP56188800 A JP 56188800A JP 18880081 A JP18880081 A JP 18880081A JP H0237646 B2 JPH0237646 B2 JP H0237646B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- composition
- porcelain
- pbzro
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 10
- 238000013329 compounding Methods 0.000 claims description 2
- NKTZYSOLHFIEMF-UHFFFAOYSA-N dioxido(dioxo)tungsten;lead(2+) Chemical compound [Pb+2].[O-][W]([O-])(=O)=O NKTZYSOLHFIEMF-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 8
- 239000011572 manganese Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- UVTGXFAWNQTDBG-UHFFFAOYSA-N [Fe].[Pb] Chemical compound [Fe].[Pb] UVTGXFAWNQTDBG-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は、磁器組成物、特に高誘電率で焼結温
度の低く機械的強度の高い磁器組成物に関するも
のである。
従来高誘電系誘電体として、チタン酸バリウム
〔BaTiO3〕を主成分とするものが広く実用化さ
れていることは周知のとおりである。しかしなが
らBaTiO3を主成分とするものは焼結温度が通常
1300℃〜1400℃の高温であり、特に積層コンデン
サの場合には、この焼結温度に適した内部電極と
して、主成分が白金またはパラジウム等の高価な
貴金属を使用しなければならないという欠点を有
していた。
このため銀、ニツケル等を主成分とする安価な
内部電極を使用可能とするためには焼結温度がで
きるだけ低温、特に960℃以下の温度で焼結でき
る誘電体が強く要望されていた。
本発明の目的は960℃以下の温度で焼結でき、
誘電率が高く誘電損失が小さく、しかも比抵抗の
高い組成物を提供することにある。更に本発明の
目的は、焼結磁器の粒径成長を抑制し、機械的強
度を増大させ、信頼性の高い積層コンデンサ用磁
器組成物を提供することにある。すなわち、チツ
プコンデンサの場合は基板に実装したときの基板
とセラミツクの熱膨張係数の違いにより、チツプ
コンデンサに機械的な歪がかかり、微小なクラツ
クの発生やひどい場合にはチツプコンデンサが破
損する場合が生じる。またエポキシ系樹脂等を外
装したデイツプコンデンサの場合にも外装樹脂の
応力で磁器にクラツクを発生させる場合がある。
いずれの場合も磁器の抵抗強度が低いほどクラツ
クが入りやすく、破損しやすく信頼性が低くな
る。したがつて、セラミツクの機械的強度をでき
るだけ増大させることは実用上、極めて重要なこ
とである。
ところで、960℃以下の低温で焼結できる磁器
組成物の一つとしてPb(Fe2/3W1/3)O3−PbZrO3
からなる二成分組成物は既に提案されている(特
開昭55−21850)。しかしながら上記二成分組成物
は誘電損失が高く、しかも比抵抗が低く、より改
善が望まれていた。このため第三成分としてPb
(Mn2/3W1/3)O3などを添加し、上記欠点を改善
する提案がなされている(特開昭55−23058)。
しかしながら上記Pb(Fe2/3W1/3)O3−PbZrO3
およびこれにPb(Mn2/3W1/3)O3などを添加した
ものはいずれも磁器の抗折強度が低く、積層コン
デンサ用磁器組成物としての用途は自ら狭い範囲
に限定せざるを得なかつた。
本発明は、以上の点にかんがみ、960℃以下の
温度で焼結でき、機械的強度が高く、しかも比抵
抗が高く、かつ誘電率も高く、誘電率の温度変化
率も良好で、誘電損失の小さい磁器組成物を提供
するものである。
すなわち本発明は鉄・タングステン酸鉛〔Pb
(Fe2/3W1/3)O3〕、ジルコン酸鉛〔PbZrO3〕およ
びマンガン・ニオブ酸鉛〔Pb(Mn1/3Nb2/3)O3〕
からなる三成分組成物を〔Pb(Fe2/3W1/3)O3〕x
〔PbZrO3〕y〔Pb(Mn1/3Nb2/3)O3〕zと表わしたと
きに(ただしX+Y+Z=1.000)、配合比X、
Y、Zがそれぞれ
0.500≦X≦0.800
0.100≦Y≦0.498
0.002≦Z≦0.100
の範囲にあることを特徴とするものである。
以下本発明を実施例により詳細に説明する。
出発原料として酸化鉛(PbO)、酸化鉄
(Fe2O3)、酸化タングステン(WO3)、酸化ジル
コニウム(ZrO2)、酸化ニオブ(Nb2O5)および
炭酸マンガン(MnCO3)を使用し、表に示した
配合比に秤量する。なおMnCO3はMnOに換算し
て必要量得るようにした。
次にボールミル中で湿式混合した後700〜800℃
で予焼し、その後0.7ton/cm2の圧力で直径16mm、
厚さ約10mmの円柱状に加圧成形し、880℃〜950℃
で焼結した。得られた焼結体を切断し、厚さ1mm
の円板4枚と厚さ0.5mmの円板5枚を得た。厚さ
1mmの円板の両面に銀電極を焼付け電気的特性を
評価した。誘電率および誘電損失は周波数1kHz
温度20℃で測定した。絶縁抵抗は50Vの電圧を印
加し、1分後温度20℃で測定した。温度特性は室
温20℃を基準として+85℃での容量変化率を求め
た。機械的性質を抗折強度で評価するため、0.5
mmの円板から巾2mm、長さ約13mmの矩形板を切り
出した。支点間距離を9mmにとり三点法で破壊荷
重Pm〔Kg〕を測定し、τ=3Pml/2Wt2〔Kg/cm2〕なる
式により抗折強度を求めた。ただし、lは支点間
距離、tは試料の厚み、Wは試料の巾である。電
気的特性は試料4点の平均値、抗折強度は試料10
点の平均値より求めた。このようにして得られた
磁器の配合比と諸特性の関係を次表に示す。
The present invention relates to a porcelain composition, particularly a porcelain composition with a high dielectric constant, low sintering temperature, and high mechanical strength. It is well known that as a conventional high-permittivity dielectric material, a material containing barium titanate [BaTiO 3 ] as a main component has been widely put into practical use. However, for materials whose main component is BaTiO 3 , the sintering temperature is usually
The high temperature is 1300°C to 1400°C, and especially in the case of multilayer capacitors, the disadvantage is that an expensive noble metal such as platinum or palladium must be used as the main component for internal electrodes suitable for this sintering temperature. Was. Therefore, in order to make it possible to use inexpensive internal electrodes mainly composed of silver, nickel, etc., there has been a strong demand for a dielectric material that can be sintered at as low a sintering temperature as possible, especially at a temperature of 960° C. or lower. The object of the present invention is to be able to sinter at a temperature of 960℃ or less,
The object of the present invention is to provide a composition having a high dielectric constant, low dielectric loss, and high specific resistance. A further object of the present invention is to provide a ceramic composition for multilayer capacitors that suppresses grain size growth of sintered ceramics, increases mechanical strength, and has high reliability. In other words, when a chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the ceramic, which can cause minute cracks or, in severe cases, damage to the chip capacitor. occurs. Furthermore, in the case of dip capacitors coated with epoxy resin or the like, cracks may occur in the porcelain due to the stress of the coated resin.
In either case, the lower the resistance strength of the porcelain, the more likely it will be cracked and damaged, and the reliability will be lower. Therefore, it is extremely important in practice to increase the mechanical strength of ceramics as much as possible. By the way, Pb(Fe 2/3 W 1/3 ) O 3 −PbZrO 3 is one of the porcelain compositions that can be sintered at a low temperature of 960°C or lower.
A two-component composition comprising: However, the above-mentioned two-component composition has a high dielectric loss and a low specific resistance, and further improvement has been desired. Therefore, Pb is used as the third component.
A proposal has been made to improve the above-mentioned drawbacks by adding (Mn 2/3 W 1/3 )O 3 (Japanese Patent Laid-Open No. 55-23058). However, the above Pb(Fe 2/3 W 1/3 )O 3 −PbZrO 3
and Pb(Mn 2/3 W 1/3 ) O 3 added to it, the porcelain has a low bending strength, and its use as a ceramic composition for multilayer capacitors must be limited to a narrow range. I didn't get it. In view of the above points, the present invention can be sintered at a temperature of 960°C or less, has high mechanical strength, high specific resistance, high dielectric constant, good temperature change rate of dielectric constant, and has dielectric loss. This provides a small porcelain composition. That is, the present invention uses iron-lead tungstate [Pb
(Fe 2/3 W 1/3 ) O 3 ], lead zirconate [PbZrO 3 ] and lead manganese niobate [Pb(Mn 1/3 Nb 2/3 ) O 3 ]
A ternary composition consisting of [Pb(Fe 2/3 W 1/3 ) O 3 ] x
When expressed as [PbZrO 3 ] y [Pb (Mn 1/3 Nb 2/3 ) O 3 ] z (however, X+Y+Z=1.000), the compounding ratio X,
It is characterized in that Y and Z are in the ranges of 0.500≦X≦0.800, 0.100≦Y≦0.498, and 0.002≦Z≦0.100, respectively. The present invention will be explained in detail below with reference to Examples. Lead oxide (PbO), iron oxide (Fe 2 O 3 ), tungsten oxide (WO 3 ), zirconium oxide (ZrO 2 ), niobium oxide (Nb 2 O 5 ) and manganese carbonate (MnCO 3 ) are used as starting materials. , weigh according to the mixing ratio shown in the table. Note that MnCO 3 was converted into MnO to obtain the required amount. Then wet-mixed in a ball mill at 700-800℃
pre-fired at a pressure of 0.7 ton/cm 2 and then heated to a diameter of 16 mm.
Pressure molded into a cylindrical shape with a thickness of about 10 mm and heated at 880℃ to 950℃
Sintered with The obtained sintered body was cut to a thickness of 1 mm.
Four disks with a thickness of 0.5 mm and five disks with a thickness of 0.5 mm were obtained. Silver electrodes were baked on both sides of a 1 mm thick disk to evaluate its electrical characteristics. Dielectric constant and dielectric loss at frequency 1kHz
Measured at a temperature of 20°C. Insulation resistance was measured by applying a voltage of 50V and after 1 minute at a temperature of 20°C. Regarding temperature characteristics, the capacitance change rate at +85°C was determined based on the room temperature of 20°C. 0.5 to evaluate mechanical properties by bending strength
A rectangular plate with a width of 2 mm and a length of approximately 13 mm was cut out from a disk of mm. The fracture load Pm [Kg] was measured by the three-point method with the distance between the supports set to 9 mm, and the bending strength was determined using the formula: τ=3Pml/2Wt 2 [Kg/cm 2 ]. Here, l is the distance between the supporting points, t is the thickness of the sample, and W is the width of the sample. Electrical properties are average values of 4 samples, bending strength is sample 10
It was calculated from the average value of the points. The relationship between the blending ratio and various properties of the porcelain thus obtained is shown in the following table.
【表】【table】
【表】
表に示した結果から明らかなように、本発明の
Pb(Fe2/3W1/3)O3−PbZrO3−Pb(Mn1/3Nb2/3)
O3からなる三成分磁器組成物は960℃以下の低温
で焼結でき、Pb(Fe2/3W1/3)O3−PbZrO3に比較
し、抗折強度が大きく、比抵抗が高く、誘電損失
が小さい。しかも誘電率の温度変化率も良好で、
本発明により実用性の高い優れた積層コンデンサ
用の磁器組成物が得られることがわかる。
なお本発明の組成物を
〔Pb(Fe2/3W1/3)O3〕x〔PbZrO3〕y〔Pb(Mn1/3
Nb2/3)O3〕zと表わしたときに、X、Y、Zがそ
れぞれ、
0.500≦X≦0.800
0.100≦Y≦0.498
0.002≦Z≦0.100
の範囲に限定される(ただしX+Y+Z=
1.000)。X<0.500、Y>0.498の組成範囲ではキ
ユリー温度が室温より大きく高温側にずれ、X>
0.800、Y<0.100の組成範囲ではキユリー温度が
室温より大きく低温側にずれ、いずれも室温での
誘電率が低下する。Z<0.002の組成範囲では抗
折強度が小さく、Z>0.100の組成範囲では比抵
抗が小さくなる。以上の理由により上記組成範囲
に限定される。[Table] As is clear from the results shown in the table, the present invention
Pb(Fe 2/3 W 1/3 )O 3 −PbZrO 3 −Pb(Mn 1/3 Nb 2/3 )
The three-component porcelain composition consisting of O 3 can be sintered at a low temperature of 960°C or lower, and has higher flexural strength and higher specific resistance than Pb(Fe 2/3 W 1/3 ) O 3 −PbZrO 3 . , low dielectric loss. Moreover, the temperature change rate of dielectric constant is also good.
It can be seen that an excellent ceramic composition for multilayer capacitors with high practicality can be obtained by the present invention. Note that the composition of the present invention is [Pb(Fe 2/3 W 1/3 ) O 3 ] x [PbZrO 3 ] y [Pb(Mn 1/3
Nb 2/3 ) O 3 ] z When expressed as
1.000). In the composition range of X < 0.500, Y > 0.498, the Curie temperature deviates greatly from room temperature to the high temperature side, and X>
In the composition range of 0.800 and Y<0.100, the Curie temperature shifts to a much lower temperature side than room temperature, and in both cases, the dielectric constant at room temperature decreases. In the composition range of Z<0.002, the bending strength is small, and in the composition range of Z>0.100, the specific resistance is small. For the above reasons, the composition is limited to the above composition range.
Claims (1)
O3〕、ジルコン酸鉛〔PbZrO3〕およびマンガ
ン・ニオブ酸鉛〔Pb(Mn1/3Nb2/3)O3〕からなる
三成分組成物を〔Pb(Fe2/3W1/3)O3〕x〔PbZrO3〕
y〔Pb(Mn1/3Nb2/3)O3〕zと表わしたときに(た
だしX+Y+Z=1.000)配合比X、Y、Zがそ
れぞれ 0.500≦X≦0.800 0.100≦Y≦0.498 0.002≦Z≦0.100 の範囲にあることを特徴とする磁器組成物。[Claims] 1. Iron/lead tungstate [Pb (Fe 2/3 W 1/3 )
[ Pb ( Fe 2/3 W 1/3 )O 3 〕 x 〔PbZrO 3 〕
y [Pb (Mn 1/3 Nb 2/3 ) O 3 ] When expressed as z (X+Y+Z=1.000), the compounding ratios X, Y, and Z are each 0.500≦X≦0.800 0.100≦Y≦0.498 0.002≦Z A porcelain composition characterized in that it is in the range of ≦0.100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188800A JPS5889706A (en) | 1981-11-25 | 1981-11-25 | Porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188800A JPS5889706A (en) | 1981-11-25 | 1981-11-25 | Porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5889706A JPS5889706A (en) | 1983-05-28 |
| JPH0237646B2 true JPH0237646B2 (en) | 1990-08-27 |
Family
ID=16230018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56188800A Granted JPS5889706A (en) | 1981-11-25 | 1981-11-25 | Porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5889706A (en) |
-
1981
- 1981-11-25 JP JP56188800A patent/JPS5889706A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5889706A (en) | 1983-05-28 |
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