JPH04143289A - Formation of thick film plated conductor - Google Patents
Formation of thick film plated conductorInfo
- Publication number
- JPH04143289A JPH04143289A JP26384990A JP26384990A JPH04143289A JP H04143289 A JPH04143289 A JP H04143289A JP 26384990 A JP26384990 A JP 26384990A JP 26384990 A JP26384990 A JP 26384990A JP H04143289 A JPH04143289 A JP H04143289A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- contg
- substance
- org
- copper sulfate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 34
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000007747 plating Methods 0.000 claims abstract description 67
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 26
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 25
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 13
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 9
- 239000011593 sulfur Substances 0.000 claims description 9
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 9
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 abstract description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 abstract 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical compound CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 2
- 229940080818 propionamide Drugs 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241001061127 Thione Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- OARRHUQTFTUEOS-UHFFFAOYSA-N safranin Chemical compound [Cl-].C=12C=C(N)C(C)=CC2=NC2=CC(C)=C(N)C=C2[N+]=1C1=CC=CC=C1 OARRHUQTFTUEOS-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、金属板上あるいは絶縁基板上に設けられた導
体パターン上に硫酸銅メッキ液を用いて電解メッキによ
り厚付は導体パターンを形成する方法に関するものであ
る。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is a method of forming a thick conductor pattern on a conductor pattern provided on a metal plate or an insulating substrate by electrolytic plating using a copper sulfate plating solution. It's about how to do it.
従来、印刷回路基板の製造において、厚膜導体を形成す
る場合、メッキ法によって導体を形成することが一般的
である。例えば、銅張基板に感光性樹脂でパターンを形
成し、エツチングによって、樹脂に覆われていない部分
の銅箔を除去し、残ったレジストを除去した後に電気メ
ッキをするか、あるいは、金属基板上に感光性樹脂でパ
ターンを形成し、電気メッキ後メッキ面を他の樹脂基板
に貼り合わせ、金属基板を除去する等が常用されている
。Conventionally, when forming a thick film conductor in the manufacture of printed circuit boards, it is common to form the conductor by a plating method. For example, a pattern is formed on a copper-clad board using photosensitive resin, the copper foil is removed from the areas not covered by the resin by etching, the remaining resist is removed, and then electroplated. A commonly used method is to form a pattern using photosensitive resin, then bond the plated surface to another resin substrate after electroplating, and then remove the metal substrate.
これらの方法を用いて厚膜メッキを行う場合、回路の抵
抗を下げるため、導体断面積を大きくする必要がある。When performing thick film plating using these methods, it is necessary to increase the cross-sectional area of the conductor in order to lower the resistance of the circuit.
しかし、メッキ厚を大きくしようとすると、メッキの幅
方向への成長も大きくなりパターンの配線密度が向上し
ないという欠点が生じる。従来この問題点は、メッキ時
の大きな陰極電流密度を適用して異方性を向上させる手
法により解決できることがピロリン酸銅メッキ法を例に
特開昭５６−１６９２６６号公報、特開昭５７−９１５
９０号公報特開昭６０−２３０９９３号公報等に記載さ
れている。However, if an attempt is made to increase the thickness of the plating, the growth of the plating in the width direction will also increase, resulting in a drawback that the wiring density of the pattern will not improve. Conventionally, this problem can be solved by applying a large cathode current density during plating to improve the anisotropy, as reported in Japanese Patent Laid-Open Nos. 169266-1982 and 1983-1982, using copper pyrophosphate plating as an example. 915
90, Japanese Patent Application Laid-Open No. 60-230993, etc.
これら公報には硫酸銅メッキ液を用いても陰極電流密度
を大きくすることにより異方性メッキによる厚付は導体
パターンかできることが言及されている。These publications mention that even if a copper sulfate plating solution is used, by increasing the cathode current density, thick conductor patterns can be formed by anisotropic plating.
硫酸銅メッキ液を用いるとピロリン酸銅メッキ液に比べ
高速で厚付はメッキ導体パターンを形成させることがで
きるので、硫酸銅メッキ法は生産性に優れている。しか
しながら、硫酸銅メッキ液を用いて厚付は導体層を形成
させる場合、厚付は導体層の表面に小突起や凹みが発生
するので、表面平滑で光沢のある平面性の優れた厚付は
導体のプリントコイル等の印刷回路パターンを形成し難
い。The copper sulfate plating method is superior in productivity because a copper sulfate plating solution can form a thick plated conductor pattern at a higher speed than a copper pyrophosphate plating solution. However, when forming a thick conductor layer using a copper sulfate plating solution, small protrusions and dents occur on the surface of the conductor layer. It is difficult to form printed circuit patterns such as printed conductor coils.
硫酸銅メッキ液を用いて前記の異方性メッキ法で導体配
線密度３本あるいは５本／ ｍｍを越える印刷コイル等
の導体パターンの導体上に厚さ方向の電析層成長を幅方
向のそれよりも大きく成長させて厚付は導体パターンを
形成させる場合、前記の平面性の問題の他に所望の異方
性メッキ成長が得られないことがある。本発明は上記問
題点を解決し、異方性ファクターが０．６以上の厚付け
が可能な硫酸銅メッキ法を提供するものである。ここに
異方性ファクターは、メッキスタート時点での導体幅（
Ｗ、）、メッキ終了時のメッキ導体幅（Ｗ２）、メッキ
終了時の厚付は導体厚さ（Ｈ）とにより式Ｈ／（Ｗ！−
Ｗ）と定義される。The above-mentioned anisotropic plating method uses a copper sulfate plating solution to grow a deposited layer in the thickness direction on the conductor of a conductor pattern such as a printed coil with a conductor wiring density exceeding 3 or 5 wires/mm. When a thick conductor pattern is formed by growing larger than the above, in addition to the flatness problem mentioned above, the desired anisotropic plating growth may not be obtained. The present invention solves the above problems and provides a copper sulfate plating method that allows plating with an anisotropy factor of 0.6 or more. Here, the anisotropy factor is the conductor width at the start of plating (
W, ), the width of the plated conductor at the end of plating (W2), and the thickness of the conductor at the end of plating is determined by the formula H/(W!-).
W) is defined.
本発明は金属板上あるいは絶縁板上に設けられた導体パ
ターン上に含窒素有機物質と硫黄系有機物質を式（１）
を満足する条件で含有する硫酸銅メッキ液を用いて電解
メッキにより厚付は導体パターンを形成する方法である
。The present invention uses a nitrogen-containing organic substance and a sulfur-based organic substance on a conductive pattern provided on a metal plate or an insulating plate using the formula (1).
Thick plating is a method of forming a conductor pattern by electrolytic plating using a copper sulfate plating solution containing the following conditions.
（０，２−Ｓ ） Ｘ （１００−１／ Ｌ ）≦１０
・・・・・・ （１）式（１）中、（Ｌ）は含窒素有機
物質のメッキ液中のｇｅｌで表わされる濃度、（Ｓ）は
含硫黄有機物質のメッキ液中のｇｅｌで表わされる濃度
をそれぞれ表わす。(0,2-S) X (100-1/L)≦10
...... (1) In formula (1), (L) is the concentration of the nitrogen-containing organic substance expressed in gel in the plating solution, and (S) is the concentration of the sulfur-containing organic substance expressed in gel in the plating solution. Each represents the concentration.
本発明のメッキ導体形成方法に用いられる硫酸銅メッキ
液の組成は以下のとおりである。The composition of the copper sulfate plating solution used in the method for forming plated conductors of the present invention is as follows.
成分 濃度Ｃｇ／ｌ）
硫酸銅（ＣｕＳＯ４” ５ＨｚＯ） １００〜２
６０硫酸 ６０−１６０
塩素イオン（Ｃ１−） １０〜１５０ｐｐｍ
好ましくは、硫酸銅、硫酸及び塩素イオンがそれぞれ６
０〜２００ ｇｅｌ、１００〜１２０ｇ＃及び３０〜７
ｏｐｐ−の濃度で組成されることが好ましい。Ingredients Concentration Cg/l) Copper sulfate (CuSO4” 5HzO) 100-2
60 Sulfuric acid 60-160 Chlorine ion (C1-) 10-150ppm
Preferably, copper sulfate, sulfuric acid and chloride ions each contain 6
0-200 gel, 100-120g# and 30-7
Preferably, the composition is at a concentration of opp-.
本発明の硫酸銅メッキ液は前記基組成を有するメッキ液
に含窒素有機物質及び含硫黄系有機物質を後述の条件を
満足する割合でそれぞれ添加される。硫酸銅メッキ液に
は、更にポリエチレン、グリコール等の高分子物質系の
界面活性物質を０．１〜５．０ ｇ／Ｉ！の濃度で添加
することにより陰極となる金属板又は導体パターンの突
起部分への無用な電析の形成を防止することができる。In the copper sulfate plating solution of the present invention, a nitrogen-containing organic substance and a sulfur-containing organic substance are added to a plating solution having the above basic composition in proportions that satisfy the conditions described below. The copper sulfate plating solution further contains 0.1 to 5.0 g/I of a polymeric surfactant such as polyethylene or glycol! By adding it at a concentration of , it is possible to prevent unnecessary electrodeposition from forming on the protruding portions of the metal plate or conductor pattern that will serve as the cathode.
高分子の有機物質を含有させるのが好ましい。含窒素有
機物質にはメッキのレベラー効果を発揮するもので、メ
ッキ表面の平滑化を促進させる物質でサフラニン色素系
の誘導体、アセトアミド、プロピオンアミド等のアミド
類、アルキル化ポリアルキレンイミン等か揚げられる。It is preferable to contain a polymeric organic substance. Nitrogen-containing organic substances exhibit a leveling effect in plating, and are substances that promote smoothing of the plating surface, such as safranin pigment derivatives, amides such as acetamide and propionamide, and alkylated polyalkylene imines. .
含硫黄系有機物質は異方メッキを向上させる効果がある
もので、具体的には千オ尿素誘導体、チアゾール類、チ
オン類、ジサルファイド基を有する含硫黄有機脂肪酸等
が揚げられる。含窒素有機物質の件、メッキの異方成長
性と表面性を低下させる傾向がある。一方、含硫黄有機
物質はメッキの異方生長性を向上させる効果があるが、
過剰添加は低電密領域でメッキ層の表面の光沢を失わせ
しめる傾向がある。これら両温加物質の添加がメッキの
異方性生長を妨げずに平面平滑な層を形成せしめつる領
域は、含窒素有機物質及び含硫黄有機物質の濃度がそれ
ぞれ ０゜Ｏ１〜２ｇ／ｌ、０．Ｏ１〜０．２ｇＨの範
囲で式（１）を満足する領域で選ばれる。より好ましい
それぞれの濃度が０．０１〜Ｌ ｇｅｌ 、 ０．０３
〜０．２ｇ＃の範囲でかつ式（２）を満足する混合添加
領域にあるメッキ浴を用いる。The sulfur-containing organic substance has the effect of improving anisotropic plating, and specifically includes 1,000 urea derivatives, thiazoles, thiones, and sulfur-containing organic fatty acids having a disulfide group. Nitrogen-containing organic substances tend to reduce the anisotropic growth and surface properties of plating. On the other hand, sulfur-containing organic substances have the effect of improving the anisotropic growth of plating;
Excessive addition tends to cause the surface of the plating layer to lose its luster in the low electric density region. The addition of these two warming substances forms a flat, smooth layer without hindering the anisotropic growth of the plating. 0. It is selected in the range of O1 to 0.2 gH, which satisfies the formula (1). More preferable concentrations of each are 0.01 to L gel , 0.03
A plating bath is used that is in the mixed addition range of 0.2 g# and satisfies formula (2).
（０，２−Ｓ） Ｘ （１００−１／Ｌ）ぐ１０・・・
・・・ （１）（Ｏ１２−３）ｘ（１００−１／Ｌ）＜
８ ・・・・・・ （２）さらに好ましい浴組成は
、含窒素有機物質成分０．０１〜０．０５ｇ／ １ 、
含硫黄有機成分０，０１〜０．０５ｇ／ １で、かつ、
式（３）を満足する領域である。(0,2-S) X (100-1/L)g10...
... (1)(O12-3)x(100-1/L)<
(2) A more preferable bath composition is a nitrogen-containing organic substance component of 0.01 to 0.05 g/1;
0.01 to 0.05 g/1 sulfur-containing organic component, and
This is an area that satisfies equation (3).
（Ｓ −０，０２） ／Ｌ ＞２．１ ・・・・
・・ （３）メッキカソードの電流密度としては、ヤケ
（高電流密度でメッキを行ったときに生じるザラついた
異常な表面性）が発生しない範囲で高い電流密度が好ま
しい。例えば、毎分０．２ｔｆ／ＴＩ！程度の流量での
エアー攪拌を行った場合、カソード表面が光沢を有する
電流密度範囲は槽の構造などによっても異なるが通常３
〜８ Ａ／ｄａ”程度であり、このうち高い異方性が得
られる範囲は５〜８ Ａ／ｄｍ’程度である。父上記光
沢を有する電流密度範囲は浴の攪拌状態によっても異な
る。例えば液流を基板に当てるようにした場合、１５〜
２０ Ａ／ｄｍ”の電流密度まで光沢を持たせることが
可能である。同じ攪拌条件のもとでは電流密度が高い方
が好ましいという傾向は変らない。電流密度をＡ （Ａ
／ｄｍ”）エアー攪拌の流量をＢ （ｒｒｒ／ｎ（）と
すると、 Ａ／Ｂ＞１０となることが好ましく、より好
ましくは、Ａ／Ｂ〉２０である。(S -0,02) /L >2.1...
(3) As the current density of the plating cathode, a high current density is preferable as long as it does not cause discoloration (abnormal surface roughness that occurs when plating is performed at high current density). For example, 0.2tf/TI per minute! When air agitation is performed at a flow rate of approximately
~8 A/dm', and the range in which high anisotropy can be obtained is approximately 5 to 8 A/dm'.The current density range that produces the above-mentioned luster also varies depending on the stirring state of the bath.For example, When the liquid flow is applied to the substrate, 15~
It is possible to create gloss up to a current density of 20 A/dm. Under the same stirring conditions, the tendency remains that higher current density is preferable.
/dm'') The air stirring flow rate is B (rrr/n(), preferably A/B>10, more preferably A/B>20.
実施例 １
表面に銅箔を有する絶縁基板の表面に感光性レジストを
厚さ４〜５μ程度で均一に塗布乾燥し、パターンマスク
を通して高圧水銀ランプで露光し、現像液及びリンス液
を用いて現像した。次いでポストベーク（熱硬化）を行
い線幅４０μ、ピッチ１７０μのコイルパターンを銅箔
上に得た。Example 1 A photosensitive resist was uniformly applied to a thickness of about 4 to 5 μm on the surface of an insulating substrate having a copper foil on the surface, dried, exposed to light using a high-pressure mercury lamp through a pattern mask, and developed using a developer and a rinse solution. did. Next, post-baking (thermal curing) was performed to obtain a coil pattern with a line width of 40 μm and a pitch of 170 μm on the copper foil.
この基板に下記の組成の硫酸鋼メッキ浴を用いて、陰極
電流密度５ Ａ／ｄｍ” 、攪拌条件は、流量０．２ｄ
／ｒｒ！のエアー攪拌を行い、メッキ厚８５μ程度のメ
ッキを行った。A sulfuric acid steel plating bath with the following composition was used on this substrate, the cathode current density was 5 A/dm'', and the stirring conditions were a flow rate of 0.2 d.
/rr! Then, plating was performed to a plating thickness of about 85 μm.
硫酸銅（ＣＬＩＳＯ４” ５ＨｚＯ） ： ｆｌｏ
ｇ／ｆ硫 酸（Ｈ！８０４） ： １８０ｇ／
ＩＣｆ−（１規定Ｈｃｌ水溶液で添加）：５０ｐｐｍ
ポリエチレングリフール：０．３５ｇ／１２硫化テトラ
アルキルチウラムのナトリウムｍ：５ｇ／ ｌこれに
より得られた導体は初期のメッキ幅より横方向に５３μ
程度成長したものであった。これより計算される異方性
ファクターは０．８０２であり、これは従来のメッキ法
より得られたものと比較して充分高いものとであり、表
面状態も細い凹凸のない滑らかなものであった。Copper sulfate (CLISO4” 5HzO): flo
g/f sulfuric acid (H!804): 180g/
ICf- (added with 1N HCl aqueous solution): 50ppm
Polyethylene Glyfur: 0.35g/Sodium of 12-tetraalkylthiuram sulfide m: 5g/l The conductor thus obtained has a width of 53μ in the lateral direction from the initial plating width.
It had grown somewhat. The anisotropy factor calculated from this is 0.802, which is sufficiently higher than that obtained by conventional plating methods, and the surface condition is smooth with no fine irregularities. Ta.
実施例 ２
実施例１と同様の基板を用い、下記組成の硫酸銅メッキ
液を用いて陰極電流密度６ Ａ／ｄａ”攪拌条件は、０
．３５ｍ１０ｆのエアー攪拌を行い、メッキ厚１００μ
のメッキを行った。Example 2 Using the same substrate as in Example 1, a copper sulfate plating solution having the following composition was used, the cathode current density was 6 A/da, and the stirring conditions were 0.
．． 35m10f air agitation, plating thickness 100μ
was plated.
硫酸銅（ＣｕＳＯ４’５ＨｉＯ） ： １２０ｇ／
ｊ！硫 酸（）ｌｚｓＯｎ） ： ｉｓｏｇ＃
Ｃ１−イオン（１規定ＨＣＩ溶液で添加）ニア０ｐｐｍ
ポリエチレングリコール ：０．４ｇ／１２硫化テ
トラアルキルチウラムのナトリウム塩 ： ０．０８
ｇ／ １プロピオンアミド ： ０．０２
ｇ＃これにより得られた導体は、初期のメッキ幅より横
方向に５８μ程度成長したものであった。これより計算
される異方性ファクターは０．８６２でありこれは従来
のメッキ法より得られたものと比較して充分高いものと
言える。Copper sulfate (CuSO4'5HiO): 120g/
j! Sulfuric acid ()lzsOn): isog#
C1- ion (added with 1N HCI solution) near 0 ppm
Polyethylene glycol: 0.4g/Sodium salt of tetraalkylthiuram 12 sulfide: 0.08
g/1 propionamide: 0.02
g# The conductor thus obtained had grown by about 58 μ in the lateral direction from the initial plating width. The anisotropy factor calculated from this is 0.862, which is sufficiently higher than that obtained by conventional plating methods.
これらの実施例に用いたパターンは初期のメッキ幅４０
μ、ピッチ１８０μでラインパターンが平行に並んだも
のを用いた。The patterns used in these examples had an initial plating width of 40
A line pattern was used in which line patterns were arranged in parallel with μ and pitch of 180 μ.
比較例
実施例１及び２と同様の基板を用い下記メッキ液組成の
硫酸銅メッキ浴を用いて、陰極電流密度３ Ａ／ｄｍ”
攪拌エアー流量０．５ｍ／ｍで行った。Comparative Example Using the same substrate as in Examples 1 and 2 and using a copper sulfate plating bath having the following plating solution composition, a cathode current density of 3 A/dm was applied.
The stirring air flow rate was 0.5 m/m.
硫酸銅（ＣＬＩＳＯ４” ５ＨｔＯ） ： １１０
ｇ／ １硫 酸（ＨｘＳＯ，） ： １８０ｇ
／ ＩＣＺ−イオン（ｌ規定ＭＣＩ溶液で添加） ：
５０ ｐｐｔｎポリエチレングリコール ： ０．３
５ｇ／ １２硫化テトラフルキルチウラムのナトリウム
塩 ： ０．０８ｇ／ １プロピオンアミド
：０．１ｇ＃’これより得られた導体は、メッキ
厚６０μに対し初期のメッキ幅より５５μ程度横方向に
成長したものであった。これより計算される異方性ファ
クターは０．５４５であり、従来のメッキと比較し同程
度のものであるといえる。Copper sulfate (CLISO4” 5HtO): 110
g/1 sulfuric acid (HxSO,): 180g
/ ICZ-ion (added in normal MCI solution):
50 pptn polyethylene glycol: 0.3
5g/ Sodium salt of tetrafurkylthiuram 12 sulfide: 0.08g/ 1propionamide
:0.1g#' The conductor thus obtained had a plating thickness of 60μ and had grown laterally by about 55μ from the initial plating width. The anisotropy factor calculated from this is 0.545, which can be said to be on the same level as conventional plating.
本発明は含窒素有機化合物及び含窒素有機化合物を特定
の条件で含有せしめた硫酸鋼メッキ液を用いたので、従
来の硫酸銅メッキ液では達成されることのない、平面性
に優れ高度の異方性ファクターを有する導体厚付はパタ
ーンを生産性よく形成することができる。本発明による
硫酸銅メッキ法により、例えば厚み１００μの導体ライ
ンを５本／Ｗ以上の、厚み５０μのラインであれば８本
／ｍの導体ラインの形成が可能になった。本発明により
硫酸銅メッキ法におけるメッキ成長の異方性が高度にな
り、硫酸銅メッキ法による高密度でかつ回路抵抗の低い
、平面コイル等の印刷回路パターンの製造が可能になっ
た。The present invention uses a nitrogen-containing organic compound and a sulfuric acid steel plating solution containing the nitrogen-containing organic compound under specific conditions, so it has excellent flatness and a high degree of variation, which cannot be achieved with conventional copper sulfate plating solutions. Thick conductor having a directivity factor allows patterns to be formed with high productivity. The copper sulfate plating method according to the present invention has made it possible to form, for example, 5 or more conductor lines/W with a thickness of 100 μm, and 8 conductor lines/m with a thickness of 50 μm. The present invention has improved the anisotropy of plating growth in copper sulfate plating, making it possible to manufacture printed circuit patterns such as planar coils with high density and low circuit resistance by copper sulfate plating.
Claims (1)
ン上に、含窒素有機物質と硫黄系有機物質を式（１）を
満足する条件で含有する硫酸銅メッキ液を用いて電解メ
ッキにより厚付け導体パターンを形成する方法 （０．２−Ｓ）×（１００−１／Ｌ）≦１０・・・ ・
・・（１）但し、式（１）中、（Ｌ）は含窒素有機物質
のメッキ液中のｇ／ｌで表わされる濃度、（Ｓ）は含硫
黄有機物質のメッキ液中のｇ／ｌで表わされる濃度をそ
れぞれ表わす。[Claims] A copper sulfate plating solution containing a nitrogen-containing organic substance and a sulfur-based organic substance under conditions that satisfy formula (1) is used on a conductor pattern provided on a metal plate or an insulating plate. A method of forming a thick conductor pattern by electrolytic plating (0.2-S)×(100-1/L)≦10...・
...(1) However, in formula (1), (L) is the concentration of the nitrogen-containing organic substance in the plating solution expressed in g/l, and (S) is the concentration of the sulfur-containing organic substance in the plating solution in g/l. , respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26384990A JPH04143289A (en) | 1990-10-03 | 1990-10-03 | Formation of thick film plated conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26384990A JPH04143289A (en) | 1990-10-03 | 1990-10-03 | Formation of thick film plated conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04143289A true JPH04143289A (en) | 1992-05-18 |
Family
ID=17395083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26384990A Pending JPH04143289A (en) | 1990-10-03 | 1990-10-03 | Formation of thick film plated conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04143289A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000014306A1 (en) * | 1998-09-03 | 2000-03-16 | Ebara Corporation | Method for plating substrate and apparatus |
| WO2000059277A1 (en) * | 1999-03-25 | 2000-10-05 | Ibiden Co., Ltd. | Method of producing printed wiring boards |
-
1990
- 1990-10-03 JP JP26384990A patent/JPH04143289A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000014306A1 (en) * | 1998-09-03 | 2000-03-16 | Ebara Corporation | Method for plating substrate and apparatus |
| WO2000059277A1 (en) * | 1999-03-25 | 2000-10-05 | Ibiden Co., Ltd. | Method of producing printed wiring boards |
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