JPH04196389A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JPH04196389A JPH04196389A JP32293490A JP32293490A JPH04196389A JP H04196389 A JPH04196389 A JP H04196389A JP 32293490 A JP32293490 A JP 32293490A JP 32293490 A JP32293490 A JP 32293490A JP H04196389 A JPH04196389 A JP H04196389A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- insulating layer
- conductor
- organic insulating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、素子の高密度実装に伴って要求される放熱性
、基板強度、高寸法安定性等の特徴より使用されている
メタルコア基板において、形成される導体の接着強度に
優れがっ絶縁の信顛性にも優れた配線基板に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention is applicable to metal core substrates which are used due to the characteristics of heat dissipation, substrate strength, high dimensional stability, etc. required for high-density mounting of elements. The present invention relates to a wiring board that has excellent adhesive strength of formed conductors and excellent insulation reliability.
(従来の技術)
電子部品の軽薄短小化に伴い部品の実装密度は、著しく
向上し、この傾向に伴い基板も多様化が進んでいる。ス
ルーホールを有する金属基板であるメタルコア基板もそ
のひとつであり、放熱性、基板強度、高寸法安定性等の
特徴より使用されている。(Prior Art) As electronic components become lighter, thinner, shorter, and smaller, the packaging density of components has increased significantly, and in line with this trend, substrates are also becoming more diverse. One such example is a metal core substrate, which is a metal substrate with through holes, and is used because of its features such as heat dissipation, substrate strength, and high dimensional stability.
メタルコア基板は、スルーホールををする為、スルーホ
ール内壁と表面を絶縁し、その上に導体が形成されなけ
ればならない。現在の製造方法としては、金属板に穴明
げをし両側にエポキシ樹脂を含浸させたガラスクロスと
銅箔を配して熱圧ブレスにより接合し、その後穴内に流
動硬化したエポキシ樹脂に穴明けをし以下両面基板と同
様にして加工する方法や金属板に穴明は後電着塗装、静
電粉体塗装、流動浸漬法等により穴の内壁と表面を同時
に有機樹脂を被覆し、その後メンキにより導体を形成す
る方法がある。前者は、二層の穴明けにおける位置合わ
せ精度が難しく、工程も複雑となる。また表層がエポキ
シ樹脂含浸ガラスクロスであるため放熱性も低下するこ
ととなる。後者は、比較的容易に製造することが出来る
が、導体となるメッキ層の接着力が弱く、硬化した有機
絶縁層を粗面化しメッキ核を付け、その後無電解メ・7
キを行って導体を形成し、アンカー効果によりメッキ層
の接着力を向上させる手段がとられる。Since the metal core board has through holes, the inner wall of the through hole and the surface must be insulated, and a conductor must be formed on it. The current manufacturing method is to drill holes in a metal plate, place glass cloth and copper foil impregnated with epoxy resin on both sides, and bond them using a hot pressure press, then drill a hole in the epoxy resin that has hardened through the flow. After that, the holes are processed in the same way as for double-sided boards, and the inner walls and surface of the holes are coated with an organic resin at the same time by electrodeposition coating, electrostatic powder coating, fluidized dipping, etc. There is a method of forming a conductor using In the former case, the positioning accuracy in drilling holes in the two layers is difficult and the process is complicated. Furthermore, since the surface layer is made of epoxy resin-impregnated glass cloth, heat dissipation performance is also reduced. The latter can be manufactured relatively easily, but the adhesion of the plating layer that serves as a conductor is weak, and the surface of the hardened organic insulating layer is roughened and plating cores are attached, followed by electroless method 7.
A method is taken to improve the adhesion of the plating layer by using the anchor effect.
しかしながらこの粗面化させる為に、クロム酸混液、高
濃度アルカリ等の強い薬剤が使用される。However, in order to roughen the surface, strong chemicals such as a chromic acid mixture and a highly concentrated alkali are used.
この為絶縁層にピンホールを発生する危険を有している
。For this reason, there is a risk of pinholes occurring in the insulating layer.
(発明が解決しようとする課題)
本発明の目的は、このような問題に対し導体となるメッ
キ層の接着力と絶縁信頬性に優れたメタルコア基板を提
供することにある。(Problems to be Solved by the Invention) An object of the present invention is to solve such problems by providing a metal core substrate with excellent adhesive strength and insulation properties of a plating layer serving as a conductor.
(課題を解決するための手段)
上記目的を達成した本発明の配線基板は、金属板上に電
気泳動により形成された有機絶縁層、その上にメッキに
より形成された導体を備えた配線基板であって、上記導
体が上記有機絶縁層の熱硬化前にメッキ核を付与され硬
化後にメッキを行うことにより設けられたことを特徴と
する。(Means for Solving the Problems) The wiring board of the present invention that achieves the above object is a wiring board that includes an organic insulating layer formed on a metal plate by electrophoresis, and a conductor formed on the organic insulating layer by plating. The conductor is characterized in that the conductor is provided by applying plating nuclei to the organic insulating layer before heat curing, and plating after curing.
本発明に使用される金属板としては、特に限定されるも
のではないが、通常アルミニウム、鉄、珪素鋼板、陽極
酸化アルミニウム、銅、銅クラ。The metal plate used in the present invention is not particularly limited, but usually includes aluminum, iron, silicon steel plate, anodized aluminum, copper, and copper alloy.
ドインハー等が挙げられる。Doinher et al.
本発明に使用される有機絶縁層としては、エポキシ樹脂
、メラミン樹脂、ポリイミド樹脂等の層が挙げられるが
、耐電圧、耐熱性の面よりポリイミド樹脂から成るのが
望ましい。本発明に用いられるポリイミドとしては、特
に限定はされないが、接着性の面より例えば3.3′
−ジアミノヘンヅフェノン、1.3−ビス(3−アミノ
フェノキシ)ヘンゼン、4.4′ −ビス(3−アミノ
フェノキシ)ビフェニル、2.2−ビスC4−(3−ア
ミノフェノキシ)フエニルジプロパン、2,2−ビス(
/1−(3−アミノフェノキシ)フェニル〕 −1,1
,1,3,3,3−ヘキサフルオロプロパン、ビス[4
−(3−アミノフェノキシ)フェニルフスルフィド、ビ
ス(4−(3−アミノフェノキシ)フェニルコケトン、
ビス(4−(3−アミノフェノキシ)フェニル]スルホ
ン等のジアミンと例えばエチレンテトラカルボン酸二無
水物、シクロペンクンテトラカルボン酸二無水物、ピロ
メリット酸二無水物、3.3’、4.4’ −ベンゾ
フェノンテトラカルボン酸二無水物、2.2’。Examples of the organic insulating layer used in the present invention include layers made of epoxy resin, melamine resin, polyimide resin, etc., but it is preferably made of polyimide resin in terms of voltage resistance and heat resistance. The polyimide used in the present invention is not particularly limited, but from the viewpoint of adhesiveness, for example, 3.3'
-Diaminohenduphenone, 1.3-bis(3-aminophenoxy)henzene, 4.4'-bis(3-aminophenoxy)biphenyl, 2.2-bisC4-(3-aminophenoxy)phenyldipropane , 2,2-bis(
/1-(3-aminophenoxy)phenyl] -1,1
, 1,3,3,3-hexafluoropropane, bis[4
-(3-aminophenoxy) phenyl fusulfide, bis(4-(3-aminophenoxy) phenyl koketone,
Diamines such as bis(4-(3-aminophenoxy)phenyl)sulfone and, for example, ethylenetetracarboxylic dianhydride, cyclopenkune tetracarboxylic dianhydride, pyromellitic dianhydride, 3.3', 4. 4'-benzophenonetetracarboxylic dianhydride, 2.2'.
3.3′ −ベンゾフェノンテトラカルボン酸二無水物
、3.3’、4.4’ −ビフェニルテトラカルボン
酸二無水物、2.2’、3.3’ −ビフェニルテト
ラカルボン酸二無水物、2,2−ビス(3,4−ジカル
ボキシフェニル)プロパンニ無水物、2,2′−ビス(
2,3−ジカルボキシフェニル)プロパンニ無水物、ビ
ス(3,4−ジカルボキシフェニル)エーテルニ無水物
、ビス(3゜4−ジカルボキシフェニル)スルホンニ無
水物、1.1−ビス(2,3−ジカルボキシフェニル)
エタンニ無水物、ビス(2,3−ジカルボキシフェニル
)メタンニ無水物、ビス(3,4−ジカルボキシフェニ
ル)メタンニ無水物、2,3,6゜7−ナフタレンテト
ラカルボン酸二無水物、1゜4.5.8−ナフタレンテ
トラカルボン酸二無水物、1.2.5.6−ナフタレン
テトラカルボン酸二無水物、1.2.3.4−ヘンゼン
テトラカルボン酸二無水物、3,4,9.10−ペリレ
ンテトラカルボン酸二無水物、2,3,6.7−アント
ラセンテトラカルボン酸二無水物、1,2,7゜8−フ
ェナントレンテトラカルボン酸二無水物等のテトラカル
ボン酸二無水物より構成されるポリアミド酸を加熱イミ
ド化して得られるポリイミドが好ましい。これらは単独
でも或いは2種以上混合して用いても構わない。3.3'-benzophenonetetracarboxylic dianhydride, 3.3', 4.4'-biphenyltetracarboxylic dianhydride, 2.2', 3.3'-biphenyltetracarboxylic dianhydride, 2 , 2-bis(3,4-dicarboxyphenyl)propanihydride, 2,2'-bis(
2,3-dicarboxyphenyl)propanihydride, bis(3,4-dicarboxyphenyl)ether dianhydride, bis(3゜4-dicarboxyphenyl)sulfone dianhydride, 1.1-bis(2,3- dicarboxyphenyl)
Ethanihydride, bis(2,3-dicarboxyphenyl)methanihydride, bis(3,4-dicarboxyphenyl)methanidianhydride, 2,3,6° 7-naphthalenetetracarboxylic dianhydride, 1° 4.5.8-Naphthalenetetracarboxylic dianhydride, 1.2.5.6-Naphthalenetetracarboxylic dianhydride, 1.2.3.4-Hensentetracarboxylic dianhydride, 3,4 , 9.10-Perylenetetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 1,2,7°8-phenanthrenetetracarboxylic dianhydride, etc. A polyimide obtained by heating and imidizing a polyamic acid composed of an anhydride is preferred. These may be used alone or in combination of two or more.
又、本樹脂中に放熱性を向上させる目的にて無機フィラ
ーを加えても構わない。この目的で使用される無機フィ
ラーとしては、例えばアルミナ、ンリカ、窒化硼素、炭
化珪素、窒化アルミニウム、酸化ベリリウム等が挙げら
れる。Furthermore, an inorganic filler may be added to the resin for the purpose of improving heat dissipation. Examples of inorganic fillers used for this purpose include alumina, phosphoric acid, boron nitride, silicon carbide, aluminum nitride, beryllium oxide, and the like.
電気泳動によるポリイミド絶縁膜の形成は、以下のよう
にして行うことが出来る。すなわちポリイミドの前駆体
であるポリアミド酸をアミン等で中和し、水希釈するこ
とにより電着液を調製し、木電着液中乙こて所定の穴明
けをされた金属板を陽極として通常10V〜300■の
電圧にて電気泳動を行い、金属板にポリアミド酸被膜を
形成する。その後、加熱イミド化することによりポリイ
ミド絶縁層を形成することが出来る。Formation of a polyimide insulating film by electrophoresis can be performed as follows. In other words, an electrodeposition solution is prepared by neutralizing polyamic acid, which is a precursor of polyimide, with an amine, etc., and diluting it with water. Electrophoresis is performed at a voltage of 10V to 300V to form a polyamic acid film on the metal plate. Thereafter, a polyimide insulating layer can be formed by heat imidization.
本発明に使用されるメッキ核としては、パラジウム、銅
、銀等が挙げられるが、ポリアミド酸被膜の加熱イミド
化時の酸化防止の面よりパラジウムが望ましい。Examples of the plating core used in the present invention include palladium, copper, silver, etc., but palladium is preferable from the viewpoint of preventing oxidation during heat imidization of the polyamic acid coating.
以下にパラジウム核の被着方法の一例を示す。An example of a method for depositing palladium cores is shown below.
上記の如(電着浴中にてポリアミド酸被膜を形成された
金属板を水洗後、塩化錫コロイド液に浸漬し、次いで塩
化パラジウム水溶液に浸漬しポリアミド酸被膜上にパラ
ジウム核を形成する。その後加熱イミド化によりポリア
ミド酸を脱水イミド化するとともにパラジウム核をポリ
イミド層に固定化する。As described above (after washing the metal plate on which a polyamic acid film has been formed in an electrodeposition bath with water, it is immersed in a tin chloride colloidal solution, and then immersed in a palladium chloride aqueous solution to form palladium nuclei on the polyamic acid film. The polyamic acid is dehydrated and imidized by heat imidization, and the palladium core is immobilized on the polyimide layer.
次いで無電解銅メッキを行いポリイミド被膜上に銅導体
層を形成する。この際無電解メンキと電気メッキを併用
してももちろん構わない。無電解メッキ前にメッキ核の
露出を促す為に、必要に応して溶剤、アルカリにより有
機絶縁層の表面をエツチングしても構わないがあくまで
表面を軽くエツチングを行うことが重要である。Next, electroless copper plating is performed to form a copper conductor layer on the polyimide film. At this time, it is of course possible to use electroless plating and electroplating in combination. If necessary, the surface of the organic insulating layer may be etched with a solvent or alkali to promote exposure of the plating nucleus before electroless plating, but it is important to lightly etch the surface.
メッキされた基板は、通常の両面基板と同様に、例えば
ドライフィルム、スクリーン印刷等の技術により所望の
回路形成が行われ、メタルコア配線基板が得られる。A desired circuit is formed on the plated board by techniques such as dry film or screen printing, for example, in the same way as a normal double-sided board, to obtain a metal core wiring board.
(発明の効果)
このようにして得られた本発明の配線基板は従来のメタ
ルコア基板の特徴を維持しつつ、導体回路の接着強度と
絶縁倍額性に優れるものであり、産業上有用なものであ
る。(Effects of the Invention) The wiring board of the present invention obtained in this way maintains the characteristics of the conventional metal core board, and has excellent adhesive strength and insulation multiplication properties for conductor circuits, and is industrially useful. be.
(実施例) 以下、実施例を挙げ、本発明をより具体的に説明する。(Example) EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples.
以下の実施例において、接着強度は導体5IIIII1
幅にての90°引き剥がし強度の測定結果をkg /
cmの単位に換算し表示する。絶縁破壊電圧はACにて
各電圧を1分間印加しモレ電流か5mAに達した場合絶
縁破壊とみなす。半田耐熱性は、常態にて260”C2
0秒の半田浸漬を行った後の外観にて判定した。In the following examples, the adhesive strength is 5III1
Measurement result of 90° peel strength at width kg /
Convert and display in cm units. The dielectric breakdown voltage is determined by applying each AC voltage for 1 minute and when the leakage current reaches 5 mA, it is considered to be dielectric breakdown. Soldering heat resistance is 260”C2 under normal conditions.
Judgment was made based on the appearance after 0 seconds of solder immersion.
実1壓1
ジアミンとして1,3−ビス(3−アミノフェノキシ)
ベンゼン、テトラカルボン酸二無水物として3.3’、
4.4’ −ヘンシフエノンテトラカルボン酸二無水
物を反応させポリアミド酸を得た。本ポリアミド酸をジ
メチルエタノールアミンにて中和し、水を加えて電着液
を調製した。ドリルにより直径0.5皿の穴を開けたア
ルミニウム板を電着液中に浸漬しこのアルミニウム板を
陽極とし、ステンレスの板を陰極として100 V3Q
秒間の印加にて電気泳動を行った。本基板を水洗後、塩
化錫コロイド液に1分間浸漬し、次いで塩化パラジウム
水溶液に2分浸漬した。本基板を120°Cで30分、
180°Cで30分、次いで250°Cで30分加熱イ
ミド化を行って、メッキ核を有するポリイミド絶縁層を
形成した。絶縁層厚は、15μmであった。1 tsp of fruit 1,3-bis(3-aminophenoxy) as diamine
Benzene, 3.3' as tetracarboxylic dianhydride,
4.4'-Hensephenonetetracarboxylic dianhydride was reacted to obtain polyamic acid. This polyamic acid was neutralized with dimethylethanolamine, and water was added to prepare an electrodeposition solution. An aluminum plate with a hole of 0.5 diameter drilled in it was immersed in the electrodeposition solution, and the aluminum plate was used as an anode and the stainless steel plate was used as a cathode.
Electrophoresis was performed by applying the voltage for 2 seconds. After washing the substrate with water, it was immersed in a tin chloride colloid solution for 1 minute, and then immersed in a palladium chloride aqueous solution for 2 minutes. This board was heated to 120°C for 30 minutes.
Heat imidization was performed at 180°C for 30 minutes and then at 250°C for 30 minutes to form a polyimide insulating layer having plating nuclei. The insulation layer thickness was 15 μm.
その後、無電解メッキにて1μm、次いで電気メッキに
より総厚18μmの銅メッキ層を形成した。Thereafter, a copper plating layer with a total thickness of 1 μm was formed by electroless plating and then by electroplating to a total thickness of 18 μm.
メッキ層の接着強度は、1.5kg/cm。絶縁破壊電
圧は、7.5にνであった。半田浸漬後の外観は、スル
ーホール内、表面ともに異常はなかった。The adhesive strength of the plating layer is 1.5 kg/cm. The breakdown voltage was 7.5 v. There were no abnormalities in the appearance after solder immersion, both inside the through-hole and on the surface.
裏箱■1
ジアミンとして2.2−ビス[4−(3−アミノフェノ
キシ)フェニル〕プロパン、テトラカルボン酸二無水物
として3.3’、4.4’ −ヘンシフエノンテトラ
カルボン酸二無水物を反応させポリアミド酸を得た。実
施例1と同様にして電着液を調製し、アルミニウム板に
80 V 40秒の印加によりポリアミド酸電着を行い
、メッキ核を付与し加熱イミド化を行って、メッキ核を
存する、ポリイミド絶縁層を形成した。絶縁層の厚さは
、17μmであった。本処理板を30°CIO%水酸化
ナトリウム水溶液に20秒浸漬した後、充分水洗し、そ
の後、無電解メッキを行った。メッキ厚は、18μmで
あった。メッキ層の接着強度は、] 、 8 kg /
cm。絶縁破壊電圧は、7.2kVであった。半田浸
漬後の外観は、スルーホール内、表面ともに異常はなか
った。Back box ■1 2.2-bis[4-(3-aminophenoxy)phenyl]propane as diamine, 3.3', 4.4'-hensiphenonetetracarboxylic dianhydride as tetracarboxylic dianhydride were reacted to obtain polyamic acid. An electrodeposition solution was prepared in the same manner as in Example 1, and polyamic acid electrodeposition was performed on an aluminum plate by applying 80 V for 40 seconds, plating nuclei were added, and heating imidization was performed to form a polyimide insulation containing plating nuclei. formed a layer. The thickness of the insulating layer was 17 μm. The treated plate was immersed in a 30° CIO% sodium hydroxide aqueous solution for 20 seconds, thoroughly washed with water, and then subjected to electroless plating. The plating thickness was 18 μm. The adhesive strength of the plating layer is ], 8 kg/
cm. The dielectric breakdown voltage was 7.2 kV. There were no abnormalities in the appearance after solder immersion, both inside the through-hole and on the surface.
夫施拠立
ジアミンとして3.3′ −ジアミノヘンヅフエノン、
テトラカルボン酸二無水物として3.3′。3.3′-diaminohendophenone as a diamine,
3.3' as tetracarboxylic dianhydride.
4.4′ −ヘンシフエノンテトラカルボン酸二無水物
を反応させポリアミド酸を得た。本ポリアミド酸溶液に
平均粒径1μmのアルミナを対固形分50重量%を加え
、3本ロールにより混練した。その後実施例1と同様に
して電着液を調製し、アルミニウム板に120 V2O
秒の印加により電着を行い、メッキ核を付与し加熱イミ
ド化を行って、メッキ核を有するポリイミド絶縁層を形
成した。絶縁層の厚さは、25μmであった。その後、
無電解メッキと電気メッキを行った。メッキ厚は、35
μmであった。メッキ層の接着強度は、1.6 kg/
cm、絶縁破壊電圧は、9.0にνであった。半田浸漬
後の外観は、スルーホール内、表面ともに異常はなかっ
た。4.4'-hensiphenotetracarboxylic dianhydride was reacted to obtain polyamic acid. Alumina having an average particle size of 1 μm was added to the polyamic acid solution at a solid content of 50% by weight, and the mixture was kneaded using three rolls. Thereafter, an electrodeposition solution was prepared in the same manner as in Example 1, and 120 V2O was applied to an aluminum plate.
Electrodeposition was performed by applying seconds, plating nuclei were applied, and heating imidization was performed to form a polyimide insulating layer having plating nuclei. The thickness of the insulating layer was 25 μm. after that,
Electroless plating and electroplating were performed. Plating thickness is 35
It was μm. The adhesive strength of the plating layer is 1.6 kg/
cm, and the dielectric breakdown voltage was ν at 9.0. There were no abnormalities in the appearance after solder immersion, both inside the through-hole and on the surface.
此Jl辻1
実施例1において得られた電着液を用い同一の電着条件
にて電気泳動を行った。本基板を水洗した後、120
’C30分、180°C30分、次いで250°C30
分加熱イミド化を行った。絶縁層厚は、15μmであっ
た。塩化錫コロイド液に1分間浸漬し、次いで塩化パラ
ジウム水溶液に2分間浸漬し、メッキ核を付与した。メ
ッキ核を有するポリイミド絶縁層を形成した。その後、
無電解メッキにて1μm、次いで電気メンキにより総厚
18μmの銅メッキ層を形成した。絶縁破壊電圧は、7
.5kVであったが、メッキ層の接着強度は、0.2k
g/Cmと低く、半田浸漬後の外観は、スルーホール内
、表面ともに絶縁層と銅メッキ層の間で剥離を生じてい
た。This Jl Tsuji 1 Electrophoresis was performed using the electrodeposition solution obtained in Example 1 under the same electrodeposition conditions. After washing this board with water,
'C 30 minutes, 180°C 30 minutes, then 250°C 30 minutes
Imidization was performed by heating for 1 minute. The insulation layer thickness was 15 μm. It was immersed in a tin chloride colloid solution for 1 minute, and then immersed in a palladium chloride aqueous solution for 2 minutes to provide plating nuclei. A polyimide insulating layer having plating nuclei was formed. after that,
A copper plating layer with a total thickness of 1 μm was formed by electroless plating and then by electroplating to have a total thickness of 18 μm. The dielectric breakdown voltage is 7
.. 5kV, but the adhesive strength of the plating layer was 0.2kV.
g/Cm, and the appearance after solder immersion showed that peeling occurred between the insulating layer and the copper plating layer both inside the through hole and on the surface.
瓦較±I
実施例1において得られた電着液を用い同一の電着条件
にて電気泳動を行った。本基板を水洗後、120°C3
0分、180°C30分、次いで250°C30分加熱
イミド化を行いポリイミド絶縁層を形成した。絶縁層厚
は、15μmであった。本処理板を80°Cの10%水
酸化ナトリウム水溶液に2分間浸漬した後、充分水洗し
、塩化錫コロイド液に1分間浸漬し、次いで塩化パラジ
ウム水溶液に2分間浸漬し、メッキ核を付与した。その
後、無電解メッキにて1μm、次いで電気メッキにより
総厚18μmの銅メッキ層を形成した。メッキ層の接着
強度は、1.6kg / crn、半田浸漬後の外観は
、スルーホール内、表面ともに異常なかったが、絶縁破
壊電圧は、0、5kV と低い値であった。Electrophoresis was performed using the electrodeposition solution obtained in Example 1 under the same electrodeposition conditions. After washing this board with water, 120°C3
A polyimide insulating layer was formed by heating imidization for 0 minute, 30 minutes at 180°C, and then 30 minutes at 250°C. The insulation layer thickness was 15 μm. The treated plate was immersed in a 10% sodium hydroxide aqueous solution at 80°C for 2 minutes, thoroughly rinsed with water, immersed in a tin chloride colloid solution for 1 minute, and then immersed in a palladium chloride aqueous solution for 2 minutes to provide plating nuclei. . Thereafter, a copper plating layer with a total thickness of 1 μm was formed by electroless plating and then by electroplating to a total thickness of 18 μm. The adhesion strength of the plating layer was 1.6 kg/crn, and the appearance after solder immersion was normal both inside the through hole and on the surface, but the dielectric breakdown voltage was a low value of 0.5 kV.
特許出願人 三井東圧化学株式会社Patent applicant: Mitsui Toatsu Chemical Co., Ltd.
Claims (2)
、その上にメッキにより形成された導体を備えた配線基
板であって、上記導体が、上記有機絶縁層の熱硬化前に
メッキ核が付与され、硬化後にメッキを行うことにより
設けられたことを特徴とする配線基板。1. A wiring board comprising an organic insulating layer formed by electrophoresis on a metal plate and a conductor formed by plating on the organic insulating layer, wherein the conductor is provided with plating nuclei before thermosetting the organic insulating layer. A wiring board characterized in that it is provided by plating after hardening.
する請求項1記載の配線基板。2. 2. The wiring board according to claim 1, wherein the organic insulating layer is made of polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32293490A JP2945129B2 (en) | 1990-11-28 | 1990-11-28 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32293490A JP2945129B2 (en) | 1990-11-28 | 1990-11-28 | Wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196389A true JPH04196389A (en) | 1992-07-16 |
| JP2945129B2 JP2945129B2 (en) | 1999-09-06 |
Family
ID=18149267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32293490A Expired - Lifetime JP2945129B2 (en) | 1990-11-28 | 1990-11-28 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2945129B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389468B1 (en) * | 1998-05-29 | 2003-06-25 | 미츠이 긴조쿠 고교 가부시키가이샤 | Resin-coated composite foil, production and use thereof |
| JP2008069424A (en) * | 2006-09-15 | 2008-03-27 | Nts:Kk | Heat radiation body, and electrodeposition coating material for coating heat radiation material |
| JP2008308762A (en) * | 2007-05-17 | 2008-12-25 | Kimoto & Co Ltd | Material for forming electroless plating and method for manufacturing electrolessly plated non-electroconductive base material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2172333A1 (en) | 2008-09-19 | 2010-04-07 | Basf Se | Multi-layered form bodies with low formaldehyde emission containing lignocellulose |
-
1990
- 1990-11-28 JP JP32293490A patent/JP2945129B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389468B1 (en) * | 1998-05-29 | 2003-06-25 | 미츠이 긴조쿠 고교 가부시키가이샤 | Resin-coated composite foil, production and use thereof |
| US6652962B1 (en) | 1998-05-29 | 2003-11-25 | Mitsui Mining & Smelting Co. Ltd. | Resin-coated composite foil, production and use thereof |
| JP2008069424A (en) * | 2006-09-15 | 2008-03-27 | Nts:Kk | Heat radiation body, and electrodeposition coating material for coating heat radiation material |
| JP2008308762A (en) * | 2007-05-17 | 2008-12-25 | Kimoto & Co Ltd | Material for forming electroless plating and method for manufacturing electrolessly plated non-electroconductive base material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2945129B2 (en) | 1999-09-06 |
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