JPH0422022B2 - - Google Patents

Info

Publication number
JPH0422022B2
JPH0422022B2 JP58234223A JP23422383A JPH0422022B2 JP H0422022 B2 JPH0422022 B2 JP H0422022B2 JP 58234223 A JP58234223 A JP 58234223A JP 23422383 A JP23422383 A JP 23422383A JP H0422022 B2 JPH0422022 B2 JP H0422022B2
Authority
JP
Japan
Prior art keywords
heat sink
fins
semiconductor
heat
cooling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58234223A
Other languages
Japanese (ja)
Other versions
JPS60126852A (en
Inventor
Asao Nishimura
Tatsuji Sakamoto
Takahiro Ooguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58234223A priority Critical patent/JPS60126852A/en
Publication of JPS60126852A publication Critical patent/JPS60126852A/en
Publication of JPH0422022B2 publication Critical patent/JPH0422022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/774Pistons, e.g. spring-loaded members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体の冷却装置に係り、特に回路基
板上に多数実装された半導体チツプの冷却に好適
な冷却装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor cooling device, and more particularly to a cooling device suitable for cooling a large number of semiconductor chips mounted on a circuit board.

〔発明の背景〕[Background of the invention]

近年、大形電子計算機においては、大容量化、
処理高速化への要求から、半導体チツプレベルで
の素子の大規模集積化が進められ、これと同時に
半導体チツプの実装面においても、1つのパツケ
ージ内に多数のチツプを大規模に実装し、チツプ
間の配線長の短縮を図る方法が開発されている。
In recent years, large-scale computers have become larger in capacity,
The demand for faster processing has led to the large-scale integration of devices at the semiconductor chip level, and at the same time, in terms of semiconductor chip packaging, many chips have been mounted on a large scale in one package, and the number of chips between chips has increased. A method has been developed to shorten the wiring length.

従来のようにチツプ及びパツケージレベルでの
回路密度が低い場合には、標準的な冷却方法とし
て、強制対流による空冷方式が採用されていた。
しかしながら上記のような回路密度の向上は、パ
ツケージ単位面積当りの消費電力すなわち発熱密
度の増大をもたらし、従来の空冷方式では、半導
体チツプの性能及び信頼性確保に必要な冷却能力
を得ることが困難になつてきた。
In the past, when the circuit density at the chip and package level was low, forced convection air cooling was used as the standard cooling method.
However, the improvement in circuit density mentioned above brings about an increase in power consumption per unit area of the package, that is, heat generation density, making it difficult to obtain the cooling capacity necessary to ensure the performance and reliability of semiconductor chips using conventional air cooling methods. I'm getting used to it.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、パツケージの組立時あるいは
動作時におけるヒートシンクの変形に対して、フ
インの配列ピツチが変化しにくく、この結果、薄
形軽量化及び高性能化が可能な半導体冷却装置を
提供することにある。
An object of the present invention is to provide a semiconductor cooling device in which the arrangement pitch of the fins does not easily change due to deformation of the heat sink during package assembly or operation, and as a result, can be made thinner, lighter, and have higher performance. There is a particular thing.

〔発明の概要〕[Summary of the invention]

本発明は、ヒートシンク肉厚のうち、熱伝導体
とかみ合うフイン付根部分の肉厚を厚く、また他
の部分を薄くすることによつて、ヒートシンクの
変形を、フインのかみ合いに関与しない部分で吸
収させ、ヒートシンクの変形によるフインのピツ
チ変化を防止することを特徴とする。
In the present invention, deformation of the heat sink is absorbed by the parts that are not involved in the engagement of the fins by increasing the thickness of the heat sink at the base of the fins that engage with the heat conductor and making the other parts thinner. This feature prevents changes in the pitch of the fins due to deformation of the heat sink.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図によつて説明す
る。
Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図において、半導体チツプ1は、多数の導
体層及び絶縁層からなる配線基板2上に微小なは
んだボール3を介してフエイスダウンボンデイン
グされ、配線基板2の裏面の多数のピン4に電気
接続されている。配線基板2は下部ケーシング5
によつて支持され、その上から半導体チツプ1を
覆うように、上部ケーシングを兼るヒートシンク
6ぎ装着されている。ヒートシンク6の内面に
は、多数の平板状のフイン7が互いに平行に設け
られており、半導体チツプ1には、このフイン7
と微小な間隙8をもつて互いにかみ合うフイン9
を有する熱伝導体10がばね11によつて押し付
けられている。配線基板2とヒートシンク6及び
下部ケーシング5で囲まれた密室空間12にはヘ
リウムガスが満たされている。半導体チツプ1で
発生した熱は、半導体チツプ1と全面で接触する
熱伝導体10に伝えられ、熱伝導体10のフイン
9から、微小間隙8のヘリウムガス層を介してヒ
ートシンク6のフイン7に伝えられる。ヒートシ
ンク6に伝えられた熱は最終的には、ヒートシン
ク6の上部に設けられた冷水または冷却空気の流
通する冷却器13によつて除去される。
In FIG. 1, a semiconductor chip 1 is face-down bonded onto a wiring board 2 consisting of many conductor layers and insulating layers through minute solder balls 3, and is electrically connected to many pins 4 on the back side of the wiring board 2. has been done. The wiring board 2 is connected to the lower casing 5
A heat sink 6, which also serves as an upper casing, is mounted so as to cover the semiconductor chip 1 from above. A large number of flat fins 7 are provided in parallel to each other on the inner surface of the heat sink 6 .
and fins 9 that engage with each other with a small gap 8.
A thermal conductor 10 having a shape is pressed by a spring 11. A closed space 12 surrounded by the wiring board 2, heat sink 6, and lower casing 5 is filled with helium gas. The heat generated in the semiconductor chip 1 is transferred to the thermal conductor 10 that is in full contact with the semiconductor chip 1, and is transferred from the fins 9 of the thermal conductor 10 to the fins 7 of the heat sink 6 via the helium gas layer in the minute gap 8. Reportedly. The heat transferred to the heat sink 6 is finally removed by a cooler 13 provided above the heat sink 6 and through which cold water or cooling air flows.

第2図は本発明の冷却装置の主要部を示す断面
図である。ヒートシンク6、熱伝導体10及び冷
却器13には、いずれも熱伝導性の良好な銅、ア
ルミニウムなどの材料を使用する。ヒートシンク
6及び熱伝導体10に設けたフイン7及び9は、
機械加工、押し出しあるいはホビングなどの方法
によつて形成する。ヒートシンク6にフイン7を
形成する際は、熱伝導体10とかみ合う部分のフ
イン7間の谷の深さを、かみ合いに関与しない部
分の深さよりも浅くし、この部分のヒートシンク
6の肉厚を厚くする。ヒートシンク6の曲げに対
する剛性は、肉厚の3乗に比例するため、パツケ
ージの組立あるいは動作時におけるヒートシンク
6の曲げ変形は第3図に示すように、フインのか
み合いに関与しない部分に集中し、フイン7の付
根部分での変形は小さくなる。フイン付根部分で
のヒートシンク6の変形が小さくなれば、フイン
7の扇状の開閉も小さくなるので、フイン先端部
のピツチ変化を減少させることが可能となる。
FIG. 2 is a sectional view showing the main parts of the cooling device of the present invention. The heat sink 6, the thermal conductor 10, and the cooler 13 are all made of materials with good thermal conductivity, such as copper and aluminum. The fins 7 and 9 provided on the heat sink 6 and the thermal conductor 10 are
Formed by methods such as machining, extrusion, or hobbing. When forming the fins 7 on the heat sink 6, the depth of the valley between the fins 7 in the part that engages with the thermal conductor 10 is made shallower than the depth in the part that does not participate in the engagement, and the thickness of the heat sink 6 in this part is reduced. Make it thicker. Since the bending rigidity of the heat sink 6 is proportional to the cube of the wall thickness, the bending deformation of the heat sink 6 during assembly or operation of the package is concentrated in the portions not involved in the engagement of the fins, as shown in FIG. Deformation at the base of the fin 7 is reduced. If the deformation of the heat sink 6 at the base of the fins is reduced, the fan-like opening and closing of the fins 7 will also be reduced, making it possible to reduce pitch changes at the tips of the fins.

また上記実施例においては、ヒートシンク6の
肉厚を、フイン7に取付面側に変化させている。
このようなヒートシンク6に曲げが作用する場合
の応力の流れは第4図に17で模式的に示すよう
な状態となつており、断面形状の急変のため周囲
の曲げによる応力場は、フイン7の付根に影響を
及ぼしにくくなつている。このことは肉厚による
剛性の変化に加えて、フイン7のピツチ変化を低
減する効果をもたらしている。
Further, in the above embodiment, the thickness of the heat sink 6 is changed toward the mounting surface of the fins 7.
The flow of stress when bending acts on the heat sink 6 is as shown schematically at 17 in FIG. It has become less likely to affect the base of the This has the effect of reducing changes in pitch of the fins 7 in addition to changes in rigidity due to wall thickness.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、パツケ
ージの組立あるいは動作時のヒートシンクの変形
に対して、フインの配列ピツチの変化を小さくす
ることができるので、薄形軽量かつ高性能な半導
体冷却装置を得ることができる。
As explained above, according to the present invention, it is possible to reduce the change in the fin arrangement pitch due to deformation of the heat sink during package assembly or operation, thereby achieving a thin, lightweight, and high-performance semiconductor cooling device. can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の半導体冷却装置の
部分断面斜視図、第2図は第1図の半導体冷却装
置の主要部断面図、第3図は上記実施例における
ヒートシンク部の断面変形模式図、第4図は上記
実施例におけるヒートシンク部の応力場を説明す
る断面模式図である。 1…半導体チツプ、2…配線基板、3…はんだ
ボール、4…ピン、5…下部ケーシング、6…ヒ
ートシンク、7…フイン、8…間隙、9…フイ
ン、10…熱伝導体、11…ばね、12…密閉空
間、13…冷却器、14…ボルト、15…ガスケ
ツト、16…ボルト、17…応力の流れ。
FIG. 1 is a partially sectional perspective view of a semiconductor cooling device according to an embodiment of the present invention, FIG. 2 is a sectional view of the main part of the semiconductor cooling device of FIG. 1, and FIG. 3 is a cross-sectional deformation of the heat sink portion in the above embodiment. FIG. 4 is a schematic cross-sectional view illustrating the stress field of the heat sink portion in the above embodiment. DESCRIPTION OF SYMBOLS 1... Semiconductor chip, 2... Wiring board, 3... Solder ball, 4... Pin, 5... Lower casing, 6... Heat sink, 7... Fin, 8... Gap, 9... Fin, 10... Thermal conductor, 11... Spring, 12... Sealed space, 13... Cooler, 14... Bolt, 15... Gasket, 16... Bolt, 17... Stress flow.

Claims (1)

【特許請求の範囲】 1 配線基板上に実装された1個又は複数個の半
導体チツプと、空冷、液冷などの方式により冷却
されたヒートシンクを有し、半導体チツプを発生
した熱を、半導体チツプと接触し、ヒートシンク
に設けた第1のフインと互いに微小間隙をもつて
かみ合う第2のフインを有する熱伝導体によりヒ
ートシンクに放散させる形式の半導体冷却装置に
おいて、上記熱伝導体とかみ合うフイン付根部分
のヒートシンクの肉厚を他の部分より厚くしたこ
とを特徴とする半導体冷却装置。 2 ヒートシンクの肉厚をフイン取付面方向に厚
くしたことを特徴とする特許請求の範囲第1項記
載の半導体冷却装置。
[Scope of Claims] 1. A semiconductor chip having one or more semiconductor chips mounted on a wiring board and a heat sink cooled by air cooling, liquid cooling, etc., to transfer the heat generated by the semiconductor chips to the semiconductor chips. In a semiconductor cooling device of the type in which heat is dissipated to the heat sink by a heat conductor having second fins that are in contact with and engage with first fins provided on the heat sink with a minute gap, the base portion of the fin that engages with the heat conductor. A semiconductor cooling device characterized by having a heat sink thicker than other parts. 2. The semiconductor cooling device according to claim 1, wherein the thickness of the heat sink is increased in the direction of the fin mounting surface.
JP58234223A 1983-12-14 1983-12-14 Cooling device for semiconductor Granted JPS60126852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58234223A JPS60126852A (en) 1983-12-14 1983-12-14 Cooling device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58234223A JPS60126852A (en) 1983-12-14 1983-12-14 Cooling device for semiconductor

Publications (2)

Publication Number Publication Date
JPS60126852A JPS60126852A (en) 1985-07-06
JPH0422022B2 true JPH0422022B2 (en) 1992-04-15

Family

ID=16967622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58234223A Granted JPS60126852A (en) 1983-12-14 1983-12-14 Cooling device for semiconductor

Country Status (1)

Country Link
JP (1) JPS60126852A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5052481A (en) * 1988-05-26 1991-10-01 International Business Machines Corporation High conduction cooling module having internal fins and compliant interfaces for vlsi chip technology
KR920008251B1 (en) * 1988-09-26 1992-09-25 가부시기가이샤 히다찌세이사꾸쇼 Apparatus which cools an electro-device
JP2001053205A (en) * 1999-08-05 2001-02-23 Hitachi Ltd Multi-chip module sealing cooling device
KR101147731B1 (en) 2004-06-03 2012-05-25 엘지전자 주식회사 structure for cooling Digital Micromirror Device chip in Digital Light Processing projector

Also Published As

Publication number Publication date
JPS60126852A (en) 1985-07-06

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