JPH04261373A - Electrostatic motor - Google Patents
Electrostatic motorInfo
- Publication number
- JPH04261373A JPH04261373A JP2214891A JP2214891A JPH04261373A JP H04261373 A JPH04261373 A JP H04261373A JP 2214891 A JP2214891 A JP 2214891A JP 2214891 A JP2214891 A JP 2214891A JP H04261373 A JPH04261373 A JP H04261373A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- electromagnetic wave
- drive electrode
- electrostatic motor
- electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000002463 transducing effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000582320 Homo sapiens Neurogenic differentiation factor 6 Proteins 0.000 description 1
- 102100030589 Neurogenic differentiation factor 6 Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Micromachines (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は近年注目を浴びてきたマ
イクロマシンの駆動源として有用な静電モータに関する
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic motor useful as a drive source for micromachines, which has attracted attention in recent years.
【0002】0002
【従来の技術】近年、マイクロマシンと称して数mm、
或るいはそれ以下の大きさの微小機械が提案され、様々
な研究開発が為されている。そのマイクロマシンを機械
的に駆動する駆動源として、シリコンなどの半導体に対
してフォトリソグラフィ技術を駆使して半導体製の回転
子と固定子とを形成し、その回転子と固定子との間に働
く静電力によって回転子を回転させる静電マイクロモー
タが試作されている(例えば「日本ロボット学会誌」8
巻4号1990年8月号63頁以降参照)。[Prior Art] In recent years, micromachines with a size of several mm,
Micromachines of a smaller size or smaller have been proposed, and various research and development efforts have been carried out. As a drive source that mechanically drives the micromachine, a semiconductor rotor and stator are formed using photolithography technology on semiconductors such as silicon, and act between the rotor and stator. An electrostatic micromotor that rotates a rotor using electrostatic force has been prototyped (for example, "Journal of the Robotics Society of Japan" 8).
(See Vol. 4, August 1990, p. 63 et seq.).
【0003】0003
【発明が解決しようとする課題】然し乍らこの試作され
た静電マイクロモータにおける静電力は回転子の翼片の
先端と固定子片の先端との間の電荷によって発生するポ
イント間のクーロン力に依存する構成であるので、大き
な駆動力を得るには100V以上の高電圧を用いる必要
がある。ところが試作されたマイクロモータはその回転
子の直径が200μm程度で回転子、固定子間の距離が
2〜3μmと極めて小サイズであり、モータの大きさに
対して用いる電圧が高いので、回転子、固定子間や隣接
する固定子間の耐圧とかに格別の配慮を払う必要がある
。[Problem to be solved by the invention] However, the electrostatic force in this prototype electrostatic micromotor depends on the Coulomb force between the points generated by electric charges between the tips of the rotor blades and the tips of the stator pieces. Therefore, in order to obtain a large driving force, it is necessary to use a high voltage of 100 V or more. However, the prototype micromotor is extremely small, with a rotor diameter of about 200 μm and a distance between the rotor and stator of 2 to 3 μm. , it is necessary to pay special consideration to the withstand voltage between stators and between adjacent stators.
【0004】また回転駆動するために固定子に印加する
100V以上の高電圧源を必要とする上に、その高電圧
を制御するための周辺回路も大型化する問題点があった
。[0004] Furthermore, in order to drive the stator, a high voltage source of 100 V or more is required to be applied to the stator, and the peripheral circuitry for controlling the high voltage is also large.
【0005】[0005]
【課題を解決するための手段】本発明はこのような課題
に鑑みて為されたものであって、回転自在に設けられた
半導体基板に駆動電極が近接配置されてなり、上記半導
体基板に所定の不純物をドープしてpn接合を主体とす
る電磁波−電気変換素子を形成し、上記駆動電極近傍の
電磁波−電気変換素子に電磁波を照射することによって
素子表面に生じる電荷と上記駆動電極に印加する電界と
によって発生する吸引力、或るいは反発力にて上記半導
体基板を回転駆動するものである。[Means for Solving the Problems] The present invention has been made in view of the above-mentioned problems, and includes a drive electrode arranged close to a rotatably provided semiconductor substrate. An electromagnetic wave-to-electrical conversion element mainly consisting of a pn junction is formed by doping impurities, and by irradiating the electromagnetic wave to the electromagnetic wave to the electromagnetic wave near the drive electrode with electromagnetic waves, charges generated on the element surface and applied to the drive electrode. The semiconductor substrate is rotated by an attractive force or a repulsive force generated by an electric field.
【0006】[0006]
【作用】回転駆動される半導体基板に電磁波照射による
電荷が存在するので、駆動電極には電界の導断などの制
御を為すことなく、単に電界の印加だけで半導体基板は
回転駆動される。[Operation] Since the semiconductor substrate to be rotationally driven is charged with electromagnetic wave irradiation, the semiconductor substrate is rotationally driven by simply applying an electric field to the drive electrode without controlling the conduction or disconnection of the electric field.
【0007】[0007]
【実施例】図1は本発明静電モータを概念的に示した斜
視図である。この図において、1はシリコンなどの半導
体材料を円盤状に形成された半導体基板であって、図示
されていない軸枢手段にて回転自在に構成されている。
この半導体基板1の大きさは、直径20〜200μm、
厚さ1〜数μm、程度である。そしてこの半導体基板1
はその差し渡し方向に、例えば酸素のイオン注入などに
よって形成された分離帯2によって、多数の領域31、
32、・・・に電気的に分割されている。さらにこの多
数の領域31、32、・・・にはその表面側からボロン
や燐などの不純物がドープされてpn接合41、42、
・・・が形成されている。このpn接合41、42、・
・・は、太陽光などの電磁波の照射を受けると電気を発
生する太陽電池などで代表される電磁波−電気変換素子
51、52、・・・を構成している。6は半導体基板1
の表面に近接配置された金属導体から成る駆動電極で、
例えば半導体基板1の1つの領域38に対向配置されて
おり、+または−の電界が印加される。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a perspective view conceptually showing the electrostatic motor of the present invention. In this figure, reference numeral 1 denotes a semiconductor substrate made of a semiconductor material such as silicon in the shape of a disk, and is configured to be freely rotatable by a pivot means (not shown). The size of this semiconductor substrate 1 is 20 to 200 μm in diameter,
The thickness is approximately 1 to several μm. And this semiconductor substrate 1
A large number of regions 31,
It is electrically divided into 32, . Further, impurities such as boron and phosphorus are doped into these many regions 31, 32, .
... is formed. These pn junctions 41, 42,
. . . constitute electromagnetic wave-to-electrical conversion elements 51, 52, . . . typified by solar cells that generate electricity when irradiated with electromagnetic waves such as sunlight. 6 is a semiconductor substrate 1
A drive electrode made of a metal conductor placed close to the surface of the
For example, they are arranged opposite to one region 38 of the semiconductor substrate 1, and a + or - electric field is applied thereto.
【0008】而して図1に示すように、半導体基板1表
面側がp型、裏面側がn型で、駆動電極6に負の電界を
印加した状態で、該駆動電極6に対応した領域38に隣
りあった領域31に太陽光7を照射する。すると太陽光
7の照射を受けた領域31の電磁波−電気変換素子51
は発電を開始し、p型の表面側に+の電荷が発生する。
その結果、この+電荷と駆動電極6の−の電界との間に
生じる静電力による吸引力が領域31と駆動電極6との
間に発生し、回転可能に軸枢されている半導体基板1か
矢印で示す右方向に回転駆動される。領域31が回転し
て駆動電極6の陰に入ると、その領域31と駆動電極6
との間の静電力は消滅するが、領域31の隣りの領域3
2に太陽光7が照射されるようになり、今度はこの領域
32と駆動電極6と間に静電力が発生し、半導体基板1
は連続的に回転駆動される。同じ構成において、駆動電
極6に印加する電界を+にすれば太陽光の照射を受けた
領域31表面に発生する+の電荷との間に反発力が発生
し、半導体基板1は左回転することになる。As shown in FIG. 1, the semiconductor substrate 1 has a p-type on the front side and an n-type on the back side, and when a negative electric field is applied to the drive electrode 6, a region 38 corresponding to the drive electrode 6 is Adjacent areas 31 are irradiated with sunlight 7. Then, the electromagnetic wave-electric conversion element 51 in the area 31 irradiated with sunlight 7
starts generating electricity, and a + charge is generated on the p-type surface side. As a result, an attractive force due to an electrostatic force generated between the positive charge and the negative electric field of the drive electrode 6 is generated between the region 31 and the drive electrode 6, and the semiconductor substrate 1, which is rotatably pivoted, It is rotated in the right direction as indicated by the arrow. When the region 31 rotates and enters the shadow of the drive electrode 6, the region 31 and the drive electrode 6
The electrostatic force between the areas 31 and 31 disappears, but the area 3
2 is now irradiated with sunlight 7, and this time an electrostatic force is generated between this region 32 and the drive electrode 6, and the semiconductor substrate 1
is continuously driven to rotate. In the same configuration, if the electric field applied to the drive electrode 6 is made positive, a repulsive force will be generated between the positive charge generated on the surface of the region 31 irradiated with sunlight, and the semiconductor substrate 1 will rotate counterclockwise. become.
【0009】図2は本発明の他の実施例を示しており、
半導体基板1がドーナッツ状円盤で構成されているとこ
ろが図1の実施例と異なるところで、回転駆動に寄与し
ない半導体基板1の中央部分が取り除かれているので、
回転子としての半導体基板の重量が低減され、大きな運
動量を得ることができる。FIG. 2 shows another embodiment of the invention,
The difference from the embodiment shown in FIG. 1 is that the semiconductor substrate 1 is constituted by a donut-shaped disk, and the central portion of the semiconductor substrate 1 that does not contribute to rotational drive is removed.
The weight of the semiconductor substrate as a rotor is reduced, and a large momentum can be obtained.
【0010】図3は図1、図2の実施例を改良したもの
で、駆動電極6を2個、或るいはそれ以上に配置してよ
り大きな回転駆動力を得ようとした実施例である。即ち
複数の駆動電極61、62の一側方に光を遮断する遮光
板81、82を設け、他側方は光が半導体基板1の領域
31、35に達するように構成されている。斯る構成に
おいて太陽光7を半導体基板1全面に照射せしめると、
電極61、62、並びに遮光板81、82によって被わ
れていない領域31、35にのみ太陽光7が到達し、そ
れらの領域31、35と駆動電極61、62との間で半
導体基板1を回転せしめる駆動力が発生する。この実施
例によれば、半導体基板1の複数個所で回転駆動力が得
られるので、図1、図2の実施例に比べて大きな駆動力
を発生せしめることができる。FIG. 3 is an improved version of the embodiments shown in FIGS. 1 and 2, and is an embodiment in which two or more driving electrodes 6 are arranged to obtain a larger rotational driving force. . That is, light shielding plates 81 and 82 are provided on one side of the plurality of drive electrodes 61 and 62 to block light, and the other side is configured to allow light to reach the regions 31 and 35 of the semiconductor substrate 1. In such a configuration, when the entire surface of the semiconductor substrate 1 is irradiated with sunlight 7,
The sunlight 7 reaches only the regions 31 and 35 that are not covered by the electrodes 61 and 62 and the light shielding plates 81 and 82, and the semiconductor substrate 1 is rotated between these regions 31 and 35 and the drive electrodes 61 and 62. A driving force is generated. According to this embodiment, rotational driving force can be obtained at a plurality of locations on the semiconductor substrate 1, so that a larger driving force can be generated than in the embodiments shown in FIGS. 1 and 2.
【0011】図4も本発明の他の実施例を示しており、
この実施例においては半導体基板1の円周方向から不純
物が導入されて基板1外周と平行なpn接合41、42
・・・が形成されている。そして各領域31、32、・
・・に近接配置される駆動電極6は基板1の外周面に対
向する位置に設けられている。そしてこの実施例におい
ては太陽光7も領域31の外周方向から照射される。そ
の結果、図1、図2で示した実施例と同様に領域31の
外周表面に発生した電荷と駆動電極6との間に発生する
吸引力、或るいは反発力によって半導体基板1は右方向
、或るいは左方向に回転駆動される。FIG. 4 also shows another embodiment of the present invention,
In this embodiment, impurities are introduced from the circumferential direction of the semiconductor substrate 1 to form pn junctions 41 and 42 parallel to the outer circumference of the substrate 1.
... is formed. And each area 31, 32, ・
The drive electrodes 6, which are arranged in close proximity to the drive electrodes 6, are provided at positions facing the outer circumferential surface of the substrate 1. In this embodiment, the sunlight 7 is also irradiated from the outer peripheral direction of the region 31 . As a result, as in the embodiments shown in FIGS. 1 and 2, the semiconductor substrate 1 is moved to the right by the attractive force or repulsive force generated between the electric charge generated on the outer peripheral surface of the region 31 and the drive electrode 6. , or rotationally driven to the left.
【0012】図5は本発明のさらに他の実施例である。
図1〜図4の何れの実施例においても駆動電極6にはモ
ータ外部から電界を供給していたが、この実施例では駆
動電極6へも太陽電池などの電磁波−電気変換素子にて
発生せしめた電界を用いている。即ち、駆動電極6に隣
接してpn接合から成る電磁波−電気変換素子9を設け
、この素子9と駆動電極6とを電気的に直結している。
そして半導体基板1の領域31とこの電磁波−電気変換
素子9とに太陽光7などの電磁波を照射することによっ
て該電磁波−電気変換素子9で発生して駆動電極6にま
で導かれた電界と、領域31の電磁波−電気変換素子5
1で発生した電荷との間に生じる反発力、または吸引力
によって半導体基板1は回転駆動される。この図5に示
した静電モータによれば駆動力は全て電磁波からのエネ
ルギーによって賄われるので、モータそのものが完全に
ワイヤレス化することができる。FIG. 5 shows yet another embodiment of the present invention. In all of the embodiments shown in FIGS. 1 to 4, an electric field is supplied to the drive electrode 6 from outside the motor, but in this embodiment, an electric field is also supplied to the drive electrode 6 by an electromagnetic wave-to-electricity conversion element such as a solar cell. It uses an electric field. That is, an electromagnetic wave-to-electrical conversion element 9 made of a pn junction is provided adjacent to the drive electrode 6, and this element 9 and the drive electrode 6 are directly electrically connected. Then, by irradiating the region 31 of the semiconductor substrate 1 and this electromagnetic wave-to-electric conversion element 9 with electromagnetic waves such as sunlight 7, an electric field generated in the electromagnetic wave-to-electric conversion element 9 and guided to the drive electrode 6; Electromagnetic wave-electric conversion element 5 in region 31
The semiconductor substrate 1 is rotationally driven by the repulsive force or attractive force generated between the semiconductor substrate 1 and the electric charge generated in the semiconductor substrate 1 . According to the electrostatic motor shown in FIG. 5, all driving force is provided by energy from electromagnetic waves, so the motor itself can be made completely wireless.
【0013】ここで図5に示した構成のモータにおいて
、半導体基板1と駆動電極6との間に働く静電力につい
て考えてみる。図6に示すように、厚さ1μmの単結晶
シリコン基板から構成された電磁波−電気変換素子5、
並びに駆動電極用の電磁波−電気変換素子9に太陽光7
を照射すると、正負の電荷が発生し、その電荷はシリコ
ン基板を誘電体とみなし、基板の表裏に電磁波−電気変
換素子の開放電圧を発生するためにその電荷量Qは、Let us now consider the electrostatic force that acts between the semiconductor substrate 1 and the drive electrode 6 in the motor having the configuration shown in FIG. As shown in FIG. 6, an electromagnetic wave-to-electrical conversion element 5 made of a single crystal silicon substrate with a thickness of 1 μm,
In addition, sunlight 7 is applied to the electromagnetic wave-electric conversion element 9 for the drive electrode.
When irradiated with , positive and negative charges are generated, and the silicon substrate is regarded as a dielectric, and the amount of charge Q is
【0014】[0014]
【数1】[Math 1]
【0015】ここで図7に示す如く、半導体基板1と駆
動電極2の各々の電荷量を、面積1μm2の点電荷とみ
なして静電吸引力Fを計算すると、Here, as shown in FIG. 7, when the electrostatic attraction force F is calculated by regarding the amount of charge on each of the semiconductor substrate 1 and the drive electrode 2 as point charges with an area of 1 μm2,
【0016】[0016]
【数2】[Math 2]
【0017】となり、回転子1に働くトルクTとしては
、回転子1の半径rを100μmとすると、Assuming that the radius r of the rotor 1 is 100 μm, the torque T acting on the rotor 1 is as follows.
【0018
】0018
]
【数3】[Math 3]
【0019】が得られ、回転子1は電磁波、例えば太陽
光を照射することによって回転を始める。##EQU1## is obtained, and the rotor 1 starts rotating by irradiating it with electromagnetic waves, for example sunlight.
【0020】尚、電磁波−電気変換素子51、52・・
・に照射される電磁波としては太陽光に限ることなく、
太陽光以外に、波長の短い紫外線域の光から波長の長い
赤外線域の光も同様に用いることができ、また単位面積
当りのエネルギー密度が高い収束レーザ光を用いれば静
電モータとして大きなトルクを得ることができるであろ
う。[0020] Furthermore, the electromagnetic wave-electric conversion elements 51, 52...
・The electromagnetic waves irradiated are not limited to sunlight;
In addition to sunlight, light in the ultraviolet range with short wavelengths and light in the infrared range with long wavelengths can be used as well, and if focused laser light with high energy density per unit area is used, it can be used as an electrostatic motor to generate large torque. you will be able to get it.
【0021】[0021]
【発明の効果】本発明は以上の説明から明らかなように
、回転自在に設けられた半導体基板に駆動電極が近接配
置されてなり、上記半導体基板に所定の不純物をドープ
してpn接合を主体とする電磁波−電気変換素子を形成
し、上記駆動電極近傍の電磁波−電気変換素子に電磁波
を照射することによって素子表面に生じる電荷と上記駆
動電極に印加する電界とによって発生する吸引力、或る
いは反発力にて上記半導体基板を回転駆動しているので
、駆動エネルギーの供給手段が簡素化されると共に、太
陽光などの電磁波のみによる駆動も可能となり、マイク
ロマシンなどの微小機械をワイヤレス駆動することが期
待できる。Effects of the Invention As is clear from the above description, the present invention comprises a rotatably provided semiconductor substrate and a drive electrode placed close to it, and a pn junction is formed by doping the semiconductor substrate with a predetermined impurity. forming an electromagnetic wave-to-electrical conversion element, and irradiating the electromagnetic wave to the electromagnetic wave-to-electrical conversion element near the drive electrode, thereby generating an attractive force generated by an electric charge generated on the element surface and an electric field applied to the drive electrode; Since the semiconductor substrate is rotationally driven by repulsive force, the means for supplying driving energy is simplified, and it is also possible to drive only by electromagnetic waves such as sunlight, making it possible to wirelessly drive micromachines and other micromachines. can be expected.
【図1】本発明静電モータの一実施例を示す概念斜視図
である。FIG. 1 is a conceptual perspective view showing an embodiment of the electrostatic motor of the present invention.
【図2】本発明静電モータの他の実施例を示す概念斜視
図である。FIG. 2 is a conceptual perspective view showing another embodiment of the electrostatic motor of the present invention.
【図3】本発明静電モータのさらに他の実施例を示す概
念斜視図である。FIG. 3 is a conceptual perspective view showing still another embodiment of the electrostatic motor of the present invention.
【図4】本発明静電モータの異なった実施例を示す概念
斜視図である。FIG. 4 is a conceptual perspective view showing different embodiments of the electrostatic motor of the present invention.
【図5】本発明静電モータのさらに異なった実施例を示
す概念斜視図である。FIG. 5 is a conceptual perspective view showing still another embodiment of the electrostatic motor of the present invention.
【図6】本発明静電モータにおける電荷量算出のための
説明図である。FIG. 6 is an explanatory diagram for calculating the amount of charge in the electrostatic motor of the present invention.
【図7】本発明静電モータにおける静電吸引力算出のた
めの説明図である。FIG. 7 is an explanatory diagram for calculating electrostatic attraction force in the electrostatic motor of the present invention.
1 半導体基板 2 分離帯 3 領域 4 pn接合 5 電磁波−電気変換素子 6 駆動電極 7 太陽光 8 遮光板 9 電磁波−電気変換素子 1 Semiconductor substrate 2 Separation strip 3 Area 4 pn junction 5 Electromagnetic wave-electric conversion element 6 Drive electrode 7 Sunlight 8 9 Electromagnetic wave-electric conversion element
Claims (6)
該基板に近接配置された駆動電極とから成り、上記半導
体基板に所定の不純物をドープしてpn接合を主体とす
る電磁波−電気変換素子を形成し、上記駆動電極近傍の
電磁波−電気変換素子に電磁波を照射して該素子表面に
電荷を生ぜしめ、この電荷と上記駆動電極に印加する電
界とによって発生する吸引力、或るいは反発力にて上記
半導体基板を回転駆動することを特徴とした静電モータ
。[Claim 1] A semiconductor substrate provided rotatably;
and a drive electrode disposed close to the substrate, doping the semiconductor substrate with a predetermined impurity to form an electromagnetic wave-to-electrical conversion element mainly consisting of a pn junction, and forming an electromagnetic wave-to-electrical conversion element near the drive electrode. The semiconductor substrate is characterized in that an electric charge is generated on the surface of the element by irradiating electromagnetic waves, and the semiconductor substrate is rotationally driven by an attractive force or a repulsive force generated by this electric charge and an electric field applied to the drive electrode. electrostatic motor.
射を受けると電荷を発生する電磁波−電気変換素子から
供給されることを特徴とした請求項1記載の静電モータ
。2. The electrostatic motor according to claim 1, wherein the charge to the drive electrode is supplied from an electromagnetic wave-to-electric conversion element that generates a charge when irradiated with electromagnetic waves.
を特徴とした請求項1、または2記載の静電モータ。3. The electrostatic motor according to claim 1, wherein the semiconductor substrate is disk-shaped.
あることを特徴とした請求項1、または2記載の静電モ
ータ。4. The electrostatic motor according to claim 1, wherein the semiconductor substrate is a donut-shaped disk.
物がドープされて基板表面と平行なpn接合が形成され
ていることを特徴とした請求項1、2、3、または4記
載の静電モータ。5. The electrostatic motor according to claim 1, wherein the semiconductor substrate is doped with impurities in the thickness direction to form a pn junction parallel to the substrate surface. .
物がドープされて基板外周と平行なpn接合が形成され
ていることを特徴とした請求項1、2、3、または4記
載の静電モータ。6. The electrostatic capacitor according to claim 1, wherein the semiconductor substrate is doped with impurities from the circumferential direction to form a pn junction parallel to the outer periphery of the substrate. motor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3022148A JP2657121B2 (en) | 1991-02-15 | 1991-02-15 | Electrostatic motor |
| US07/823,459 US5262695A (en) | 1991-01-24 | 1992-01-22 | Micromachine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3022148A JP2657121B2 (en) | 1991-02-15 | 1991-02-15 | Electrostatic motor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04261373A true JPH04261373A (en) | 1992-09-17 |
| JP2657121B2 JP2657121B2 (en) | 1997-09-24 |
Family
ID=12074780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3022148A Expired - Fee Related JP2657121B2 (en) | 1991-01-24 | 1991-02-15 | Electrostatic motor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2657121B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113745075A (en) * | 2020-05-29 | 2021-12-03 | 北京大学 | On-chip micro electron source, manufacturing method thereof, electron source system and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54101078A (en) * | 1978-01-26 | 1979-08-09 | Sanyo Electric Co Ltd | Sunrays tracking device |
| JPS63161879A (en) * | 1986-12-22 | 1988-07-05 | Seiko Instr & Electronics Ltd | Electrostatic motor |
-
1991
- 1991-02-15 JP JP3022148A patent/JP2657121B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54101078A (en) * | 1978-01-26 | 1979-08-09 | Sanyo Electric Co Ltd | Sunrays tracking device |
| JPS63161879A (en) * | 1986-12-22 | 1988-07-05 | Seiko Instr & Electronics Ltd | Electrostatic motor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113745075A (en) * | 2020-05-29 | 2021-12-03 | 北京大学 | On-chip micro electron source, manufacturing method thereof, electron source system and electronic equipment |
| CN113745075B (en) * | 2020-05-29 | 2024-04-26 | 北京大学 | On-chip micro electron source and manufacturing method, electron source system, and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2657121B2 (en) | 1997-09-24 |
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