JPH0468566U

JPH0468566U -

Info

Publication number: JPH0468566U
Application number: JP11240490U
Authority: JP
Priority date: 1990-10-25
Filing date: 1990-10-25
Publication date: 1992-06-17

Description

[Brief explanation of the drawing]

第１図は本考案の一実施例を示す半導体リレー
の内部平面配置図、第２図は第１図に示す半導体
リレーの回路図、第３図は従来の一例を示す半導
体リレーの内部平面配置図、第４図は第３図に示
す半導体リレーの回路図である。１……半導体リレー、２Ａ，２Ｂ……入力端子
、３Ａ，３Ｂ……出力端子、４……中継端子、５
……発光ダイオード、６……フオトダイオードア
レー、７……駆動素子、８……ＭＯＳＦＥＴ素子
、９Ａ，９Ｂ，９Ｃ……リードフレームアイラン
ド部、１０……ドレイン電極、１１……ゲート電
極、１２……ソース電極、１３……アノード電極
、１４……カソード電極、１５……ワイヤー配線
、１６……インピーダンス素子、１７……ボデイ
電極。 Fig. 1 is an internal plan layout diagram of a semiconductor relay showing an embodiment of the present invention, Fig. 2 is a circuit diagram of the semiconductor relay shown in Fig. 1, and Fig. 3 is an internal plan layout diagram of a semiconductor relay showing a conventional example. 4 are circuit diagrams of the semiconductor relay shown in FIG. 3. 1...Semiconductor relay, 2A, 2B...Input terminal, 3A, 3B...Output terminal, 4...Relay terminal, 5
...Light emitting diode, 6...Photodiode array, 7...Drive element, 8...MOSFET element, 9A, 9B, 9C...Lead frame island portion, 10...Drain electrode, 11...Gate electrode, 12... ... Source electrode, 13 ... Anode electrode, 14 ... Cathode electrode, 15 ... Wire wiring, 16 ... Impedance element, 17 ... Body electrode.

Claims

[Claims for Utility Model Registration] 1. Two MOs having a body electrode on the back side, a drain electrode and a source electrode on the front side, and mounted on an island portion formed at the tips of two output terminals.
SFET element and 2 transistors arranged independently in the island part of the relay terminal located between the two output terminals.
the MOS having a photodiode array;
A semiconductor relay comprising a drive element that drives a FET. 2. A semiconductor relay, wherein the driving element according to claim 1 is integrated into one chip. 3. A light emitting diode that emits light in response to a signal from an input terminal, and light from the light emitting diode,
Two photodiode arrays that generate voltage and current, and an N-channel enhancement type MOSFE that charges the gate input with the voltage and current.
T and the MOSFET whose back surface is the source electrode.
and a relay terminal located between the two output terminals, and a relay terminal located between the two output terminals, and a relay terminal located between the island portion of the relay terminal and the M
The drain electrodes disposed on the surface of the OSFET are connected by wire wiring to provide a common potential, and a driving element having the two independent photodiode arrays for driving the MOSFET is connected to the island part of the relay terminal. A semiconductor relay, characterized in that the semiconductor relay is mounted, and the drain and source of the MOSFET are turned on to close the output terminal and the relay terminal.