JPH05183095A - Semiconductor device packaging - Google Patents

Abstract

(57) [Abstract] [Purpose] A signal line lead, which is bent in a gull wing shape around a semiconductor device and whose tip is connected to a signal circuit connection pad of a substrate, is capable of efficiently transmitting a high-speed signal with little transmission loss. A semiconductor device package that can be obtained is obtained. A gull-wing bent ground lead 61 is arranged on both sides of the signal line lead 21, and the tips of the ground lead 61 are connected to a ground circuit connection pad 82 of the substrate. At the same time, the width W of the signal line lead 21 is maintained at a constant value, and the distance H between the ground plane 71 provided on the substrate 31 below the signal line lead 21 and the signal line lead 21 above it.
The signal line leads 21 and the adjacent signal line leads 21 and the ground leads 6 are adjusted in accordance with the amount of decrease toward the destination.
The distance S between the side surface and 1 is gradually increased toward the tip of the signal line lead 21.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting body in which a semiconductor device containing a high-frequency element such as a semiconductor chip operated by a high speed signal is surface-mounted on a substrate.

[0002]

2. Description of the Related Art Conventionally, there is a semiconductor device in which a high frequency element is hermetically sealed in a package made of ceramic or resin or a semiconductor device in which a high frequency element is hermetically sealed in a resin.

In these semiconductor devices, as shown in FIG. 21, a plurality of strip-shaped metal signal line leads 20 for transmitting high-speed signals are provided on four sides or two sides around the semiconductor device 10. It is extended.

When the semiconductor device 10 is surface-mounted on the substrate 30, as shown in FIG. 21, the signal line leads 20 extending around the semiconductor device 10 are bent in a gull wing shape. The tip of the signal line lead 20 bent in the gull wing shape is connected to the signal circuit connection pad 80 of the substrate 30.
Connected to. Then, via the signal line leads 20, the signal circuit (not shown) of the substrate 30 and the semiconductor device 10 are connected.
A high-speed signal is transmitted to and from the high-frequency element 40 housed in.

Bending the signal line lead 20 in a gull wing shape means that the signal line lead 2 extends substantially horizontally around the semiconductor device 10 as shown in FIG.
0 It means that the middle part is bent downward in a substantially L shape, and the tip of the signal line lead 20 bent in a substantially L shape is further bent in a substantially L shape in the horizontal direction.

[0006]

However, in the semiconductor device mounting body 100 in which the semiconductor device 10 is surface-mounted on the substrate 30, the tip of the substrate is bent like a gull wing around the semiconductor device 10. The signal line lead 20 connected to the signal circuit connection pad 80 is simply exposed to the air around the semiconductor device 10.
The characteristic impedance of the signal line lead 20 for transmitting the high-speed signal is the internal circuit of the semiconductor device 10 connected to the inner end of the signal line lead 20, that is, the signal line 52 of the package 50 or the signal of the high frequency element 40 housed in the semiconductor device 10. The characteristic impedance of the circuit, such as 50Ω, was not matched.

Therefore, in the semiconductor device package 100, when a high-speed signal is transmitted between the high-frequency element 40 housed in the semiconductor device 10 and the signal circuit of the substrate via the signal line lead 20, a signal is transmitted. The insertion loss and the reflection loss when a high-speed signal is transmitted through the line lead 20 are large,
High-speed signals could not be efficiently transmitted through the signal line leads 20 with little transmission loss. This was particularly remarkable when an ultrahigh-speed signal of 20 GHz or higher was transmitted to the signal line lead 20.

The present invention has been made in view of the above problems, and is a signal line lead extending around a semiconductor device and bent in a gull wing shape, the tip of which is a connection pad for a signal circuit on a substrate. The signal line lead connected to
An object of the present invention is to provide a semiconductor device mounting body capable of efficiently transmitting a high-speed signal with little transmission loss.

[0009]

In order to achieve the above object, in a semiconductor device mounting body of the present invention, a signal line lead for transmitting a high speed signal extending around a semiconductor device accommodating a high frequency element is formed into a gull wing shape. In a semiconductor device mounting body that is bent and the tip ends of the signal line leads are connected to the signal circuit connection pads of the substrate, a gull wing shape is formed on both sides of the signal line leads following the bent shape of the signal line leads. Equipped with bent ground leads,
The tip of the ground lead is connected to the ground circuit connection pad of the substrate, and the signal line lead has a coplanar line structure, and a ground plane is formed on the substrate below the signal line lead having the coplanar line structure. The width of the signal line lead is provided in accordance with the amount of decrease in the distance H between the ground plane and the gull-wing bent signal line lead above the signal plane lead. One or both of W or the distance S between the side surfaces of the adjacent signal line lead and the ground lead adjacent to each other is gradually increased or decreased toward the tip of the signal line lead, and the signal line lead bent in the gull wing shape. The characteristic impedance is matched with the characteristic impedance of the internal circuit of the semiconductor device.

Here, the coplanar line structure means a line structure in which ground lines are provided on both sides of the signal line and arranged on the same plane as the signal line.

[0011]

In the semiconductor device package having the above structure, the signal line leads are bent in a gull wing shape around the semiconductor device, and the ends thereof are connected to the signal circuit connection pads of the substrate. A signal line with a coplanar line structure in which gull-wing-shaped ground leads are arranged side by side according to the bent shape of the line leads, and the tips of the ground leads are connected to the ground circuit connection pads on the board. The characteristic impedance of the lead for signal is the width W of the lead for signal line, the distance S between the side faces of the lead for signal line and its adjacent ground lead, and the ground plane provided on the lead for signal line and the substrate therebelow. And the distance H between the signal line lead and the ground plane below the signal line lead as the parameter value. It is determined by a predetermined calculation formula.

The dielectric material interposed between the signal line lead and the ground plane therebelow is air having a relative permittivity of about 1 or a substrate made of ceramic or resin having a predetermined permittivity in addition to the air. Then, the dielectric constant ε of the dielectric material interposed between the signal line lead and the ground plane has a constant value. At the same time, the distance H between the signal line lead, which extends around the semiconductor device and is bent in a gull wing shape, and whose tip is connected to the signal circuit connection pad of the substrate, and the ground plane provided on the substrate below the H When the length of the signal line lead and the bent shape of the signal line lead are constant, the value becomes a value that gradually decreases by a predetermined reduction amount toward the tip of the signal line lead.

Therefore, in the semiconductor device package having the above structure, the signal line leads ahead of the distance H between the ground plane provided on the substrate and the signal line leads bent in a gull wing shape thereabove. The width W of the signal line lead or one or both of the distances S between the side surfaces of the adjacent signal line lead and the ground lead are gradually increased or decreased in accordance with the decrease amount of the signal line lead toward the tip of the signal line lead. As a result, the characteristic impedance of the gull-wing-shaped signal line lead around the semiconductor device can be matched with the characteristic impedance of the internal circuit of the semiconductor device.

Specifically, the width W of the signal line lead is maintained at a constant value, and the signal line lead tip having a distance H between the ground plane provided on the substrate and the signal line lead above the ground plane is provided. The distance S between the side surfaces of the adjacent signal line lead and the ground lead in accordance with the decrease amount toward
Can be gradually increased toward the signal line destination, and the characteristic impedance of the gull-wing bent signal line lead around the semiconductor device can be matched with the characteristic impedance of the internal circuit of the semiconductor device.

Alternatively, the distance S between the side surfaces of the adjacent signal line lead and the ground lead is maintained at a constant value, and the ground plane provided on the substrate and the signal line lead bent above in a gull wing shape. The width W of the signal line lead is gradually reduced toward the signal line tip in accordance with the amount of decrease in the distance H between the signal line lead tip and the signal line lead, and the width W is bent in a gull wing shape around the semiconductor device. It is possible to match the characteristic impedance of the signal line lead with the characteristic impedance of the internal circuit of the semiconductor device.

Alternatively, for the signal line lead, the distance H between the ground plane provided on the substrate and the gall-wing bent signal line lead above the ground plane is reduced in accordance with the reduction amount toward the signal line lead tip. The width W of the lead is gradually decreased toward the tip of the signal line lead, and the distance S between the side faces of the adjacent signal line lead and the ground lead is gradually increased to bend in a gull wing shape around the semiconductor device. It is possible to match the characteristic impedance of the signal line lead with the characteristic impedance of the internal circuit of the semiconductor device.

[0017]

Embodiments of the present invention will now be described with reference to the drawings. 1 to 6 each show a preferred embodiment of a semiconductor device mounting body of the present invention, FIGS. 1 to 3 are partially omitted plan views thereof, and FIGS. 4 to 6 are front sectional views thereof. There is. The semiconductor device mounting body in these figures will be described below.

The semiconductor device mounting body 10 shown in FIGS. 1, 2 and 3.
1, 102, 103 are formed by using the semiconductor devices 11, 12, 13 shown in FIGS. 7, 8, 9, and 10, respectively.

In the semiconductor devices 11, 12 and 13, as shown in FIG. 10, a high frequency element 40 such as a semiconductor chip operated by a high speed signal is formed of ceramic or resin (ceramic and metal are used in the figure) or the like. The package 50 is hermetically sealed.

Around the package 50, a staircase surface 54 is provided, and the staircase surface 54 is provided with a signal line 52 made of metallized and continuous inside and outside the package 50.

The inner end of the signal line 52 is connected to the signal electrode of the high frequency element 40 via the wire 42.

The inner ends of the signal line leads 21, 22, 23 made of metal are connected to the outer ends of the signal line 52, and the signal line leads 21, 22, 23 are extended to the outside of the package 50.

As shown in FIGS. 7, 8 and 9, metal ground leads 61, 62, 63 are provided on both sides of the signal line leads 21, 22, 23, respectively, and the signal line leads 21, 22 and 23 are provided on the same plane as the signal line leads 21, 22 and 23 with a slight distance from each other and substantially parallel to the signal line leads 21, 22 and 23. Then, the signal line leads 21, 22, and 23 are
It has a coplanar line structure.

Specifically, as shown in FIGS. 7, 8 and 9, on both sides of the signal line 52 of the staircase surface 54 around the package, ground lines 56 made up of metallization and the like continuous with the inside and outside of the package 50 are provided. The signal line 52 and the signal line 52 are arranged in parallel with each other with a slight distance therebetween. At the outer ends of the ground line 56 on both sides of the signal line 52, the metal ground leads 61, 62, 6 are provided.
3 inner ends are connected to each other to connect the ground leads 61, 6
2, 63 extending to the outside of the package 50 on both sides of the signal line leads 21, 22 and 23,
22 and 23 are separated from each other by a minute distance, and the signal line leads 21 and
22 and 23 are arranged substantially parallel to each other and extend.

The inner end of the ground line 56 is connected to a ground electrode (not shown) of the high frequency element 40 housed in the semiconductor device 11, 12, 13 via a wire (not shown).

As shown in FIGS. 1 to 6, the signal line leads 21, 22 and 23 and the ground leads 61, 62 and 63 extending around the semiconductor devices 11, 12 and 13 are respectively arranged as shown in FIGS. Both are bent in a gull wing shape having substantially the same shape, and the signal line leads 21, 22,
The tip of 23 and the tips of the ground leads 61, 62, 63 are connected to the signal circuit connection pads 80 and the ground circuit connection pads 82 of the substrates 31, 32, 33, respectively. Then, the semiconductor devices 11, 12, 13 are mounted on the substrate 31,
Surface mounted on 32 and 33.

Signal line leads 21, 22, 23 bent in a gull wing shape around the semiconductor devices 11, 12, 13
The ground plane 7 is formed on the lower substrates 31, 32, and 33.
1, 72, 73 are provided.

Specifically, in the semiconductor device mounting bodies 101, 102 and 103 shown in FIG. 4, the semiconductor device 10 is used.
Signal circuit connection pads 80 and ground circuit connection pads (not shown) below the signal line leads 21, 22 and 23 bent in the gull wing shape around 1, 102 and 103.
A ground plane 71 made of copper foil or the like is widely provided on the surface of the substrate 31 except for the peripheral portion.

The semiconductor device mounting body 10 shown in FIG.
1, 102, 103, the semiconductor devices 101, 1
A wide ground plane 72 made of copper foil or the like is provided laterally in the middle of the substrate 32 below the signal line leads 21, 22 and 23 bent in the gull wing shape around 02 and 103.

Further, the semiconductor device mounting body 10 shown in FIG.
1, 102, 103, the semiconductor devices 101, 1
A ground plane 73 made of copper foil or the like is widely provided on the back surface of the substrate 33 below the signal line leads 21, 22, 23 bent in the gull wing shape around 02, 103.

At the same time, the ground planes 71, 72, 73 provided on the substrates 31, 32, 33 and the signal line leads 21, 22, 2 above which are bent in a gull wing shape.
Signal line leads 21, 22, 23 with a distance H between
Signal line leads 2 according to the amount of decrease toward the other end
Width W of 1, 22, 23 (hereinafter referred to as W) or adjacent signal line leads 21, 22, 23 and ground lead 6
One or both of the distances S (hereinafter referred to as S) between the side surfaces of the signal lines 1, 62, 63 and the signal line leads 21, 22, 2
We are gradually increasing or decreasing toward the three destinations.

Specifically, in the semiconductor device 11 of the semiconductor device mounting body 101 shown in FIG. 1, as shown in FIG. 7, W is held at a constant value, and at the same time, as shown in FIGS. Figure 6
As shown in FIG.
S is gradually increased toward the tip of the signal line lead 21 in accordance with the reduction amount of H toward the tip of the signal line lead 21 when mounted on 32 and 33.

Further, the semiconductor device mounting body 10 shown in FIG.
In the semiconductor device 12 of No. 2, as shown in FIG.
While keeping S at a constant value, as shown in FIGS. 4, 5 and 6, the semiconductor device 12 is mounted on the substrates 31, 32,
W is mounted on the signal line lead 22 according to the reduction amount of H toward the destination of the signal line lead 22.
It is gradually decreasing toward the other side.

Further, the semiconductor device package 10 shown in FIG.
In the semiconductor device 13 of No. 3, as shown in FIG. 4, FIG. 5, and FIG.
As shown in FIG. 9, according to the amount of reduction of H toward the other end of the signal line lead 23 when mounted on the Nos. 2 and 33,
W is gradually reduced toward the lead 23 for the signal line, and S is gradually increased toward the lead 23 for the signal line.

Then, the characteristic impedances of the signal line leads 21, 22 and 23 bent in the gull wing shape around the semiconductor devices 11, 12 and 13 mounted on the substrates 31, 32 and 33 are determined by the semiconductor devices 11, 12, 13 respectively. Is matched to the characteristic impedance of the internal circuit of 50Ω, etc.

The semiconductor device mounting bodies shown in FIGS. 1 to 6 are configured as described above.

11 to 16 show other preferred embodiments of the semiconductor device mounting body of the present invention. FIGS. 11 to 13 are plan views thereof, and FIGS. 14 to 16 are front sectional views thereof. Shows. The semiconductor device mounting body in these figures will be described below.

The semiconductor device mounting bodies 104, 105 and 106 shown in FIGS. 11 to 16 are formed by using the semiconductor devices 14, 15 and 16 shown in FIGS. 17 to 20, respectively.

In the semiconductor devices 14, 15 and 16, as shown in FIG. 20, a high frequency element 40 such as a semiconductor chip is hermetically sealed inside a resin 90.

On the four sides or two sides of the resin 90 (two sides in the figure) and the like, metal signal line leads 24,
The inner ends of 25 and 26 are embedded together. A plurality of signal line leads 24, 25, 26 are arranged side by side around the resin 90 and extended.

Signal line lead 2 embedded in resin 90
As shown in FIG. 20, the inner ends of 4, 25 and 26 are made of resin 9
The signal electrodes of the high-frequency element 40 inside 0 are directly soldered and connected by a gang bonding method.

On both sides of the signal line leads 24, 25, 26, as shown in FIGS. 17, 18 and 19, respectively,
The metal ground leads 64, 65, 66 are separated from the signal line leads 24, 25, 26 by a minute distance and are provided on the same plane as the signal line leads 24, 25, 26 on the same plane. And are installed in parallel with each other. The signal line leads 24, 25, 26 have a coplanar line structure.

Specifically, the signal line leads 24, 2
The inner ends of the ground leads 64, 65, 66 are integrally embedded on both sides of the resin 90 in which the inner ends of 5, 5, 26 are embedded. Along with that, the ground leads 64, 65, 6
The inner end of 6 is directly soldered and connected to the ground electrode (not shown) of the high frequency element 40 inside the resin 90 by the gang bonding method.

The signal line leads 24, 25 and 26 extending around the semiconductor devices 14, 15 and 16 and the ground leads 64, 65 and 66 are respectively provided as shown in FIGS. 11 to 16. Both are bent in a gull wing shape having substantially the same shape, and the signal line leads 24 and 2 are formed.
5, 26 and the tips of the ground leads 64, 65, 66 are connected to the signal circuit connection pads 80 of the substrates 34, 35, 36.
And the ground circuit connection pad 82, respectively. Then, the semiconductor devices 14, 15, 16 are mounted on the substrate 3
Surface mounted on 4, 35, 36.

Substrates 34, 3 below the signal line leads 24, 25, 26 bent in a gull wing shape around the resin 90
Wide ground planes 74, 75, and 76 are provided in the reference numerals 5 and 36.

Specifically, in the semiconductor device mounting bodies 104, 105, 106 shown in FIG. 14, signal circuit connection pads under the signal line leads 24, 25, 26 bent in a gull wing shape. The ground plane 74 is widely provided on the surface of the substrate 34 except for the periphery of 80 and the connection pad (not shown) for the ground circuit.

Further, the semiconductor device mounting body 1 shown in FIG.
In 04, 105 and 106, the board 3 below the signal line leads 24, 25 and 26 bent in a gull wing shape
A ground plane 75 made of a copper foil or the like is widely provided in the lateral direction of the middle portion of the interior of the vehicle.

Further, the semiconductor device mounting body 1 shown in FIG.
In 04, 105 and 106, the board 3 below the signal line leads 24, 25 and 26 bent in a gull wing shape
A ground plane 76 made of copper foil or the like is widely provided on the back surface of the No. 6.

At the same time, the ground planes 74, 75 and 76 provided on the substrates 34, 35 and 36 and the signal line leads 24, 25 and 2 above which are bent in a gull wing shape.
Signal line leads 24, 25, 26 at a distance H from
Signal line leads 2 according to the amount of decrease toward the other end
Width W of 4, 25, 26 (hereinafter referred to as W) or adjacent signal line leads 24, 25, 26 and ground lead 6
One or both of the distances S (hereinafter referred to as S) between the side surfaces of the signal lines 4, 65, 66 and the signal line leads 24, 25, 2
We are gradually increasing or decreasing toward the six destinations.

Specifically, in the semiconductor device 14 of the semiconductor device mounting body 104 shown in FIG. 11, as shown in FIG. 17, W is held at a constant value, and at the same time, as shown in FIGS.
As shown in FIGS. 5 and 16, respectively, when the semiconductor device 14 is mounted on the substrates 34, 35, and 36, S is set for the signal line in accordance with the reduction amount of H toward the signal line lead 24 tip. The lead 24 is gradually increased toward the other end.

The semiconductor device mounting body 1 shown in FIG.
In the semiconductor device 15 of No. 05, S is held at a constant value as shown in FIG. 18, and the semiconductor device 15 is mounted on the substrate 3 as shown in FIGS.
Signal line lead 25 when mounted on 4, 35, 36
In accordance with the decrease amount of H toward the other end, W is gradually decreased toward the front end of the signal line lead 25.

Further, the semiconductor device mounting body 1 shown in FIG.
In the semiconductor device 16 of No. 06, the semiconductor device 16 is mounted on the substrate 3 as shown in FIGS.
Signal line lead 26 when mounted on 4, 35, 36
In accordance with the decrease amount of H toward the other end, as shown in FIG. 19, W is gradually decreased toward the lead 26 for the signal line and S toward the other end of the lead 26 for the signal line. It is gradually increasing.

The characteristic impedances of the signal line leads 24, 25 and 26 bent in the gull wing shape around the semiconductor devices 14, 15 and 16 mounted on the substrates 34, 35 and 36 are measured by the semiconductor devices 14, 15, 16 respectively. The characteristic impedance of the internal circuit of 50 Ω is matched with each other.

The semiconductor device mounting bodies 104, 105 and 106 respectively shown in FIGS. 11 to 16 are configured as described above.

The semiconductor device mounting bodies 101 and 10 described above are used.
2, 103, 104, 105, 106 semiconductor devices 1
In 1, 12, 13, 14, 15, and 16, the inner electrodes of the ground leads 61, 62, 63, 64, 65, and 66 are connected to the ground electrode of the high-frequency element 40 directly or through the ground line 56 of the package. In the present invention, the ground leads 61, 62, 63, 64, 65,
66 A semiconductor device mounting body using a semiconductor device containing a high frequency element 40 having no ground electrode for connecting the inner end, or ground leads 61, 62, 63, 6
A semiconductor device using a semiconductor device in which the inner ends of 4, 65, 66 are not connected to the ground electrode of the high-frequency element 40, but are simply connected to the outer end of the ground line 56 of the package or are integrally embedded in the resin 90. It is also applicable to a mounted body, and even if it is used for such a semiconductor device mounted body, the semiconductor device mounted bodies 101, 102, 103, 104, 10 described above are used.
It is possible to form a semiconductor device mounting body having substantially the same operation as 5, 106.

[0056]

As described above, according to the semiconductor device package of the present invention, the signal line lead is bent in a gull wing shape around the semiconductor device and its tip is connected to the signal circuit connection pad of the substrate. Of the characteristic impedance of the internal circuit of the semiconductor device over the entire length of the characteristic impedance of
It can be matched to 0Ω or the like.

20 GHz is provided between the high-frequency element housed in the semiconductor device mounted on the substrate and the signal circuit on the substrate through the signal line lead bent in the gull wing shape.
It is possible to efficiently transmit a high speed signal such as an ultra high speed signal of z or more with little transmission loss.

[Brief description of drawings]

FIG. 1 is a partially omitted plan view of a semiconductor device mounting body of the present invention.

FIG. 2 is a partially omitted plan view of a semiconductor device mounting body of the present invention.

FIG. 3 is a partially omitted plan view of a semiconductor device mounting body of the present invention.

FIG. 4 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 5 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 6 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 7 is a partially omitted plan view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 8 is a partially omitted plan view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 9 is a partially omitted plan view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 10 is a partially omitted front sectional view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 11 is a plan view of a semiconductor device mounting body of the present invention.

FIG. 12 is a plan view of a semiconductor device mounting body of the present invention.

FIG. 13 is a plan view of a semiconductor device mounting body of the present invention.

FIG. 14 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 15 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 16 is a front sectional view of a semiconductor device mounting body of the present invention.

FIG. 17 is a plan view of a semiconductor device used for the semiconductor device mounting body of the present invention.

FIG. 18 is a plan view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 19 is a plan view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 20 is a front sectional view of a semiconductor device used for a semiconductor device mounting body of the present invention.

FIG. 21 is a front sectional view of a conventional semiconductor device package.

[Explanation of symbols]

10, 11, 12, 13, 14, 15, 16 Semiconductor device 20, 21, 22, 23 Signal line lead 24, 25, 26 Signal line lead 30, 31, 32, 33, 34, 35, 36 Substrate 40 High-frequency element 50 Package 52 Signal line 56 Ground line 61, 62, 63 Ground lead 64, 65, 66 Ground lead 71, 72, 73 Ground plane 74, 75, 76 Ground plane 80 Signal circuit connection pad 82 For ground circuit Connection pad 90 Resin 100, 101, 102, 103 Semiconductor device mounting body 104, 105, 106 Semiconductor device mounting body

Claims (1)

[Claims] 1. A lead for a signal line extending around a semiconductor device containing a high frequency element for transmitting a high-speed signal is bent in a gull wing shape, and the tip of the lead for the signal line is connected to a connection pad for a signal circuit of a substrate. In the semiconductor device mounting body comprising the above, the ground leads bent in a gull wing shape are arranged side by side on both sides of the signal line leads, and the tips of the ground leads are provided on the substrate. Connected to the connection pad for the ground circuit, and the signal line lead has a coplanar line structure, and a ground plane is provided on the substrate below the signal line lead having the coplanar line structure. Of the signal line lead of the distance H between the signal line lead bent in the gull wing shape. In accordance with the amount of decrease, one or both of the width W of the signal line lead and the distance S between the adjacent side faces of the signal line lead and the ground lead,
A semiconductor device package, wherein the characteristic impedance of the signal line lead bent in the gull wing shape is gradually increased or decreased toward the tip of the signal line lead to match the characteristic impedance of the internal circuit of the semiconductor device.