JPH0520969B2 - - Google Patents

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Publication number
JPH0520969B2
JPH0520969B2 JP59268618A JP26861884A JPH0520969B2 JP H0520969 B2 JPH0520969 B2 JP H0520969B2 JP 59268618 A JP59268618 A JP 59268618A JP 26861884 A JP26861884 A JP 26861884A JP H0520969 B2 JPH0520969 B2 JP H0520969B2
Authority
JP
Japan
Prior art keywords
dielectric
voltage
frequency
busbar
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59268618A
Other languages
Japanese (ja)
Other versions
JPS61147719A (en
Inventor
Masahiro Hanai
Tamotsu Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59268618A priority Critical patent/JPS61147719A/en
Publication of JPS61147719A publication Critical patent/JPS61147719A/en
Publication of JPH0520969B2 publication Critical patent/JPH0520969B2/ja
Granted legal-status Critical Current

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  • Gas-Insulated Switchgears (AREA)
  • Installation Of Bus-Bars (AREA)

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は、電力用管路母線に関するもので、特
に急峻波サージ電圧を減衰させる特性を備えた管
路母線に係る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a power conduit busbar, and particularly to a conduit busbar having characteristics of attenuating steep wave surge voltage.

[発明の技術的背景及びその問題点] 変電所で用いられる高電圧回路の開閉装置とし
て、近年、ガス絶縁開閉装置が良く用いられてい
る。これは、母線、しや断器を初めとして、その
他の付属設備を金属容器の中に収納し、その後、
この金属容器内に安定度が高く、不活性、不燃、
無臭、無害であり、且つ空気の2〜3倍の絶縁耐
力を有するSF6ガスを封入して、高電圧回路の開
閉装置としたものである。
[Technical Background of the Invention and Problems Therewith] In recent years, gas-insulated switchgears have been frequently used as switchgears for high-voltage circuits used in substations. This is done by storing the busbar, cable breaker, and other attached equipment in a metal container, and then
This metal container is highly stable, inert, nonflammable,
SF6 gas, which is odorless, harmless, and has a dielectric strength 2 to 3 times that of air, is sealed and used as a switchgear for high voltage circuits.

この様なガス絶縁開閉装置においては、しや断
器や断路器が作動し、回路が切離されたりつなが
れたりする際に、電極間に放電が生じる。この放
電により発生するサージ電圧は、時には定格の2
倍以上になることもあり、且つ第1波の波高値に
至る時間は100ns以下の高周波の振動波になり、
しかも管路母線に用いられている同軸上の構造は
周波数特性が極めて良く、1GHHzまでの周波数
の電圧をほとんど減衰させることなく伝搬させる
ため、サージは減衰せずにそのままガス絶縁開閉
装置に接続された他の機器、例えば変圧器、ブツ
シング等に達する。
In such a gas-insulated switchgear, when a circuit breaker or a disconnector operates to disconnect or connect a circuit, a discharge occurs between the electrodes. The surge voltage generated by this discharge is sometimes twice the rated value.
It can be more than double, and the time to reach the peak value of the first wave is less than 100ns, resulting in a high-frequency vibration wave.
In addition, the coaxial structure used for the conduit busbar has extremely good frequency characteristics, allowing voltages with frequencies up to 1 GHz to propagate with almost no attenuation, so surges can be connected directly to the gas-insulated switchgear without attenuation. and other equipment such as transformers, bushings, etc.

次に、この様な高周波電圧が他の機器に及ぼす
影響を変圧器を例にして説明する。即ち、第6図
に示した様に、従来のGIS型変電所において、ガ
ス絶縁開閉装置に接続される変圧器は、変圧器の
鉄心1の回りに巻線2が巻回され、これらが絶縁
油を充填したタンク3内に収納されている。ま
た、タンク3には絶縁油を冷却するクーラー4及
び絶縁油の劣化を防止する為のコンサベータ5が
配設されている。さらに、前記巻線2がの一部か
ら引出された高圧リード線6は油ダクト7を介し
て油/ガスブツシング8に接続され、さらにSF6
ガス管路母線ダクト9内に収納された高圧中心導
体10によつて図示していないガス絶縁開閉装置
に接続されている。なお、油ダクト7には避雷器
11が配設されている。
Next, the effects of such high frequency voltages on other devices will be explained using a transformer as an example. That is, as shown in Fig. 6, in a conventional GIS type substation, a transformer connected to a gas-insulated switchgear has a winding 2 wound around an iron core 1 of the transformer, and these are insulated. It is housed in a tank 3 filled with oil. Further, the tank 3 is provided with a cooler 4 for cooling the insulating oil and a conservator 5 for preventing deterioration of the insulating oil. Further, the high-voltage lead wire 6 from which the winding 2 is drawn out from a part of is connected to an oil/gas bushing 8 via an oil duct 7, and is further connected to an oil/gas bushing 8 through an oil duct 7 .
It is connected to a gas insulated switchgear (not shown) by a high voltage central conductor 10 housed in the gas line busbar duct 9. Note that a lightning arrester 11 is provided in the oil duct 7.

この様な構成を有するガス絶縁開閉装置に接続
される変圧器においては、ガス絶縁開閉装置が作
動し極めて立上がり峻度の高い高周波サージが発
生すると、前述した様にサージは管路母線を通つ
て変圧器に印加される。この様な波頭峻度の高い
高周波サージが印加された場合の変圧器の巻線の
応答について、優れた耐インパルス電圧特性を持
ち、しばしば高電圧巻線として用いられているハ
イセルキヤツプ円板巻線(高直列静電容量巻線)
を使用した場合について説明する。即ち、ハイセ
ルキヤツプ円板巻線に前述の様な高周波サージ電
圧が印加されると、ハイセルキヤツプ巻線は直列
静電容量が大きいにも拘らず、電位分布の改善は
行なわれない。つまり、第7図に示した様に、直
列静電容量は、電圧が第1段の第1のターンとそ
れに第2段の合計のターン(N=16)の半分
(N/2=8)を加えた次のターンに印加されて
始めて形成されるものであるが、急峻波サージ電
圧になると、第1のターンに入来した電圧波が
N/2加えた隣のターンに到達する前に第1のタ
ーンで波高値に達することになる。この様に、急
峻なサージ電圧に対しては、ハイセルキヤツプ円
板巻線のねらいである電位分布の改善は無意味に
なる。この無意味になる境界は巻線の電圧及び容
量によつて異なるが、第1波の負の波高値に至る
時間が0.5μS程度以下といわれている。
In a transformer connected to a gas-insulated switchgear having such a configuration, when the gas-insulated switchgear operates and a high-frequency surge with an extremely high rise is generated, the surge passes through the conduit busbar as described above. applied to the transformer. With regard to the response of transformer windings when such high-frequency surges with high wave front steepness are applied, high-cell cap disc windings, which have excellent impulse voltage resistance characteristics and are often used as high-voltage windings, are used. wire (high series capacitance winding)
We will explain the case when using . That is, when a high frequency surge voltage as described above is applied to the high cell cap disk winding, the potential distribution is not improved even though the high cell cap winding has a large series capacitance. In other words, as shown in Figure 7, the series capacitance is such that the voltage is half (N/2 = 8) of the total turns (N = 16) of the first turn of the first stage and the second stage. However, in the case of a steep wave surge voltage, before the voltage wave that entered the first turn reaches the next turn where N/2 is applied, The peak value will be reached in the first turn. In this way, the improvement of the potential distribution, which is the aim of the high-cell cap disk winding, becomes meaningless in the case of a steep surge voltage. This pointless boundary varies depending on the voltage and capacity of the winding, but it is said that the time required to reach the negative peak value of the first wave is about 0.5 μS or less.

次に、高周波サージが印加された場合に、避雷
器11が作動して変圧器を保護できるか否かを説
明する。即ち、ガス絶縁開閉装置が作動して高周
波サージが管路母線に入つた場合の各部の急峻波
電圧の波形図を第8図に示した。まずEなる電圧
波高値を持つ急峻波電圧が油/ガスブツシング8
の対地キヤパシタンスC0を充填し、避雷器11
の端子へ達する。このときブツシングの対地キヤ
パシタンスC0により急峻波電圧の波高値は若干
小さいE′となり波頭峻度も若干小さくなる。ま
た、避雷器11においてはそのv−i特性に応じ
て電流が流れるため、電圧は避雷器11の制限電
圧以下に抑制され、その波高値はE″となる。し
かし避雷器では、波高値を下げるだけで波頭峻度
は何等変らないため、急峻波サージ電圧の巻線分
布の改善はできない。
Next, it will be explained whether the lightning arrester 11 can operate and protect the transformer when a high frequency surge is applied. That is, FIG. 8 shows a waveform diagram of steep wave voltages at various parts when the gas-insulated switchgear is activated and a high-frequency surge enters the conduit busbar. First, a steep wave voltage with a voltage peak value of E is oil/gas bushing 8.
Fill the ground capacitance C 0 with lightning arrester 11
reaches the terminal. At this time, due to the ground capacitance C0 of the bushing, the peak value of the steep wave voltage becomes slightly smaller E', and the wave front steepness also becomes slightly smaller. In addition, since current flows in the arrester 11 according to its v-i characteristic, the voltage is suppressed below the limiting voltage of the arrester 11, and its peak value becomes E''. Since the wave front steepness does not change in any way, the winding distribution of steep wave surge voltage cannot be improved.

[発明の目的] 本発明は、上述したような従来の管路母線の欠
点を解消するために提案されたもので、その目的
は、GIS変電所において、ガス絶縁開閉装置を作
動させることによつて発生する高周波サージによ
つて変圧器や他の接続されている機器が絶縁破壊
を起こさない程度まで、高周波サージを減衰させ
ることのできる管路母線を提供することにある。
[Object of the Invention] The present invention was proposed in order to solve the above-mentioned drawbacks of the conventional pipeline busbar, and its purpose is to operate a gas-insulated switchgear in a GIS substation. To provide a conduit busbar capable of attenuating high-frequency surges to the extent that the high-frequency surges generated by the high-frequency surges do not cause dielectric breakdown in transformers and other connected equipment.

[発明の概要] 本発明の管路母線は、ダクト内に配設された高
圧中心導体の回りに、印加されるサージが高周波
になるほど損失が大きくなる誘電体を配設するこ
とにより、印加される高周波サージを大幅に減衰
できる様にしたものである。
[Summary of the Invention] The conduit busbar of the present invention reduces the applied surge by disposing a dielectric material around a high-voltage center conductor disposed in a duct, the loss of which increases as the frequency of the applied surge increases. It is designed to significantly attenuate high frequency surges.

[発明の実施例] 以下、本発明の一実施例を第1図及び第2図を
参照して具体的に説明する。なお、第6図の従来
の管路母線と同一の部材については、同一符号を
付し説明は省略する。
[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be specifically described with reference to FIGS. 1 and 2. Note that the same members as those of the conventional conduit busbar shown in FIG. 6 are designated by the same reference numerals, and the description thereof will be omitted.

本実施例において、SF6ガス管路母線ダクト9
の内部に配設されている高圧中心導体10の回り
の一部に、印加されるサージが高周波になるほど
損失が大きくなる誘電体20が高抵抗金属または
半導体21を介して取付けられている。また、こ
の誘電体20は、SF6ガス管路母線ダクト9の接
地導体22とも高抵抗金属または半導体21を介
して接触している。なお、この高抵抗金属または
半導体21の厚さは、その物質が持つ1MHzでの
表皮深さ程度(例えばタングステンであれば
180μm)のもので、めつきまたは蒸着等の方法
で取付けられている。
In this embodiment, the SF 6 gas line busbar duct 9
A dielectric material 20 whose loss increases as the frequency of the applied surge increases is attached via a high-resistance metal or semiconductor 21 to a portion around the high-voltage central conductor 10 disposed inside. The dielectric 20 is also in contact with the ground conductor 22 of the SF 6 gas line busbar duct 9 via a high-resistance metal or semiconductor 21 . The thickness of this high-resistance metal or semiconductor 21 is approximately the skin depth of the material at 1MHz (for example, in the case of tungsten)
180μm) and is attached by methods such as plating or vapor deposition.

この様な構成を有する本実施例の管路母線にお
いては、同軸状の管路母線の特性サージインピー
ダンスは Z0=138/√・log10(b/a) で表される。ここでaは高圧中心導体10の直
径、bは接地導体22の直径、εrは高圧中心導体
10と接地導体22の間にある物質の比誘電率で
ある。例えば、誘電体20としてBaTiO3を用い
たとすると、εr≒3000となり、ガスはSF6の1気
圧とすると、εr≒1になる。BaTiO3がある所の
サージインピーダンスZ1とSF6があるところのサ
ージインピーダンスZ2の比は、Z2/Z1=55とな
る。即ちこの部分でインピーダンス不整合が起こ
り、SF6のある管路を通つてきた高周波電圧V0
電流I0はBaTiO3がある所になると、高周波電圧
は1/28V0、電流は55/28I0になる。また、抵抗
損はRI2で与えられる為、BaTiO3がある領域で
の抵抗損は約4倍に増える。且つ、このBaTiO3
がある領域において高圧中心導体10と接地導体
22の部分を構成する金属表面に、抵抗率の高い
タングステン、ニクロム、モリブデン等を1MHz
における表皮深さ程度、蒸着またはめつきしてあ
る為、さらに損失は大きくなり、高周波サージの
減衰は非常に大きくなる。その上、BaTiO3には
第2図の様に電界Eと電束Dにはヒステリシスが
ある。この曲線に囲まれた部分は損失になり、し
かも周波数によらず大きさは一定の為周波数に比
例して損失は増える。しかし、商用周波は周波数
が低い為、損失はほとんど無い。この様に強誘電
体を管路に入れることにより、管路表面での抵抗
損と強誘電体内部でのヒステリシス損により高周
波のみを減衰させることができる。その結果、変
圧器及びブツシングに危険なレベルの高周波サー
ジ電圧はかからなくなる。
In the conduit busbar of this embodiment having such a configuration, the characteristic surge impedance of the coaxial conduit busbar is expressed as Z 0 =138/√·log 10 (b/a). Here, a is the diameter of the high voltage central conductor 10, b is the diameter of the ground conductor 22, and εr is the relative dielectric constant of the material between the high voltage central conductor 10 and the ground conductor 22. For example, if BaTiO 3 is used as the dielectric 20, εr≈3000, and if the gas is SF 6 at 1 atmosphere, εr≈1. The ratio of the surge impedance Z 1 where BaTiO 3 is present and the surge impedance Z 2 where SF 6 is present is Z 2 /Z 1 =55. In other words, an impedance mismatch occurs in this part, and the high frequency voltage V 0 passing through the pipe with SF 6 ,
When the current I 0 reaches a place where BaTiO 3 is present, the high frequency voltage becomes 1/28V 0 and the current becomes 55/28I 0 . Furthermore, since the resistance loss is given by RI 2 , the resistance loss increases approximately four times in the region where BaTiO 3 is present. Moreover, this BaTiO 3
In a certain area, high resistivity tungsten, nichrome, molybdenum, etc. is applied to the metal surface constituting the high-voltage center conductor 10 and the ground conductor 22 at 1MHz.
Because it is vapor-deposited or plated to about the skin depth, the loss becomes even greater, and the attenuation of high-frequency surges becomes extremely large. Moreover, BaTiO 3 has hysteresis in electric field E and electric flux D, as shown in FIG. The area surrounded by this curve is a loss, and since the magnitude is constant regardless of the frequency, the loss increases in proportion to the frequency. However, since commercial frequencies have low frequencies, there is almost no loss. By inserting a ferroelectric material into the conduit in this way, only high frequencies can be attenuated due to resistance loss on the surface of the conduit and hysteresis loss inside the ferroelectric material. As a result, dangerous high-frequency surge voltages are no longer applied to the transformer and bushings.

なお、本発明は、上述の実施例に限定されるも
のでは無く、誘電体として紙などの高周波になる
ほど損失角(tanδ)が増加する高分子を用いる
と、誘電体として強誘電体を用いた場合と同様
に、導体での抵抗損が増加し、その上、高周波に
なるほどtanδが増加するため、損失が増加し高周
波の減衰が大きくなり、変圧器やブツシング等の
機器を高周波サージより保護することができる。
It should be noted that the present invention is not limited to the above-mentioned embodiments, and it is possible to use a polymer such as paper, whose loss angle (tan δ) increases as the frequency increases, as a dielectric material, and a ferroelectric material as a dielectric material. As in the case, the resistance loss in the conductor increases, and in addition, as the frequency increases, tan δ increases, so the loss increases and the attenuation of high frequencies increases, which protects equipment such as transformers and bushings from high frequency surges. be able to.

また、高圧中心導体10の回りに配設される誘
電体30の形状を、第3図に示したように中心導
体10のみに接する様に構成しても良い。一般
に、SF6ガスが充満している同軸状の管路に高周
波が伝搬するときの電界は、第4図に示した様な
形状をしているが、第3図の様に中心導体10の
回りに比誘電率の高い物質を同軸上に配設する
と、電界は第5図に示した様に、高圧中心導体1
0から接地導体22に行かずに誘電体30の内部
のみを通つて伝搬していく。その結果、高周波
は、導体での抵抗損が増加し、且つ誘電体内のヒ
ステリシス損またはtanδによる損失が生じ、第1
図に示した実施例と同様に効果が得られる。
Further, the shape of the dielectric 30 disposed around the high-voltage central conductor 10 may be configured so that it contacts only the central conductor 10, as shown in FIG. Generally, when a high frequency wave propagates in a coaxial pipe filled with SF 6 gas, the electric field has a shape as shown in Figure 4. When a material with a high dielectric constant is arranged coaxially around the high-voltage central conductor 1, the electric field is generated as shown in Figure 5.
0 to the ground conductor 22, but propagates only through the interior of the dielectric 30. As a result, at high frequencies, the resistive loss in the conductor increases, and the hysteresis loss or tanδ loss in the dielectric occurs, and the first
The same effects as in the embodiment shown in the figure can be obtained.

[発明の効果] 以上の通り、本発明によれば、高圧中心導体の
回りに強誘電体又は紙等の様に高周波になるほど
tanδが増加する誘電体を配設することにより、高
周波の電気エネルギーを充分に減少させ、変圧器
やブツシング等の機器が高周波サージにより絶縁
破壊を起こさない程度にまで、高周波サージを減
衰することができる安価で信頼性の高い管路母線
を提供できる効果がある。
[Effects of the Invention] As described above, according to the present invention, as the frequency increases, the material around the high-voltage central conductor, such as ferroelectric material or paper,
By installing a dielectric material that increases tanδ, it is possible to sufficiently reduce high-frequency electrical energy and attenuate high-frequency surges to the extent that equipment such as transformers and bushings does not cause dielectric breakdown due to high-frequency surges. This has the effect of providing an inexpensive and highly reliable conduit busbar.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の管路母線の一実施例を示す要
部拡大断面図、第2図は強誘電体のヒステリシス
損を示す電界と電束の関係を表す図、第3図は本
発明の管路母線の他の実施例を示す要部拡大断面
図、第4図は従来の管路母線を伝搬する高周波の
電界の模式図、第5図は本発明の他の実施例にお
ける高周波の電界の模式図、第6図は従来のGIS
形変電所の代表的な構成図、第7図は変圧器のハ
イセルキヤツプ巻線の構成図、第8図は高周波サ
ージがGIS変電所を伝搬する時の模式図である。 1……変圧器の鉄心、2……巻線、3……タン
ク、4……クーラー、5……コンサベータ、6…
…高圧リード線、7……油ダクト、8……油/ガ
スブツシング、9……SF6ガス管路母線ダクト、
10……高圧中心導体、11……避雷器、20…
…誘電体、21……高抵抗金属又は半導体、22
……接地導体、30……誘電体。
FIG. 1 is an enlarged cross-sectional view of the main part showing an embodiment of the conduit busbar of the present invention, FIG. 2 is a diagram showing the relationship between electric field and electric flux showing hysteresis loss of a ferroelectric, and FIG. 3 is a diagram of the present invention. FIG. 4 is a schematic diagram of a high-frequency electric field propagating through a conventional pipe bus, and FIG. 5 is a schematic diagram of a high-frequency electric field in another embodiment of the present invention. Schematic diagram of electric field, Figure 6 is conventional GIS
Figure 7 is a typical configuration diagram of a transformer's high-cell cap winding, and Figure 8 is a schematic diagram of a high-frequency surge propagating through a GIS substation. 1...Transformer core, 2...Winding, 3...Tank, 4...Cooler, 5...Conservator, 6...
...High pressure lead wire, 7...Oil duct, 8...Oil/gas bushing, 9...SF 6 gas pipe busbar duct,
10... High voltage center conductor, 11... Lightning arrester, 20...
...Dielectric material, 21... High resistance metal or semiconductor, 22
...Ground conductor, 30...Dielectric material.

Claims (1)

【特許請求の範囲】 1 ガス絶縁管路母線のダクト内に配設された高
圧中心導体の回りに、印加されるサージが高周波
になるほど損失が大きくなる誘電体を配設したこ
とを特徴とする管路母線。 2 前記誘電体が、高圧中心導体と接地導体の両
方に接する様に配設され、誘電体と中心導体の間
及び誘電体と接地導体の間に、高抵抗金属又は半
導体が配設されていることを特徴とする特許請求
の範囲第1項記載の管路母線。 3 前記誘電体が、BaTiO3やBaTiO3
SrTiO3、BaSnO3又はCaTiO3を少量添加したも
の、或いは、NaNO2、PbZrO3又はSbSIである
特許請求の範囲第1項及び第2項記載の管路母
線。 4 前記誘電体が、紙又はセルロース等のコモノ
マー又は側鎖を持つ高分子である特許請求の範囲
第1項及び第2項記載の管路母線。
[Claims] 1. A dielectric material whose loss increases as the frequency of the applied surge becomes higher is disposed around a high-voltage center conductor disposed in the duct of the gas-insulated conduit busbar. Conduit busbar. 2. The dielectric is arranged so as to be in contact with both the high-voltage center conductor and the ground conductor, and a high-resistance metal or semiconductor is arranged between the dielectric and the center conductor and between the dielectric and the ground conductor. A pipe busbar according to claim 1, characterized in that: 3 The dielectric is BaTiO 3 or BaTiO 3
The pipe busbar according to claims 1 and 2, which is made of a material to which a small amount of SrTiO 3 , BaSnO 3 or CaTiO 3 is added, or is made of NaNO 2 , PbZrO 3 or SbSI. 4. The pipe busbar according to claims 1 and 2, wherein the dielectric material is a comonomer such as paper or cellulose, or a polymer having a side chain.
JP59268618A 1984-12-21 1984-12-21 Pipeline bus Granted JPS61147719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59268618A JPS61147719A (en) 1984-12-21 1984-12-21 Pipeline bus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59268618A JPS61147719A (en) 1984-12-21 1984-12-21 Pipeline bus

Publications (2)

Publication Number Publication Date
JPS61147719A JPS61147719A (en) 1986-07-05
JPH0520969B2 true JPH0520969B2 (en) 1993-03-23

Family

ID=17461044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59268618A Granted JPS61147719A (en) 1984-12-21 1984-12-21 Pipeline bus

Country Status (1)

Country Link
JP (1) JPS61147719A (en)

Also Published As

Publication number Publication date
JPS61147719A (en) 1986-07-05

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