JPH06345545A - Production of capsule for hot isostatic pressing - Google Patents
Production of capsule for hot isostatic pressingInfo
- Publication number
- JPH06345545A JPH06345545A JP5160271A JP16027193A JPH06345545A JP H06345545 A JPH06345545 A JP H06345545A JP 5160271 A JP5160271 A JP 5160271A JP 16027193 A JP16027193 A JP 16027193A JP H06345545 A JPH06345545 A JP H06345545A
- Authority
- JP
- Japan
- Prior art keywords
- capsule
- foil
- tantalum
- electrode
- tantalum foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002775 capsule Substances 0.000 title claims abstract description 57
- 238000001513 hot isostatic pressing Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000011888 foil Substances 0.000 claims abstract description 48
- 238000003466 welding Methods 0.000 claims abstract description 34
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 238000005304 joining Methods 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000011733 molybdenum Substances 0.000 claims abstract description 12
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000000956 alloy Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 5
- 239000011225 non-oxide ceramic Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、熱間等方加圧(HI
P)処理に用いられるカプセルの製作方法に関するもの
であり、特に、切削工具、スパッタリングターゲット材
等の薄板状の焼結部材の製造など、1400℃以上の高
温で行うHIP処理用カプセルの製作方法に関する。BACKGROUND OF THE INVENTION The present invention relates to hot isostatic pressing (HI).
P) The present invention relates to a method for producing a capsule used for treatment, and particularly relates to a method for producing a capsule for HIP treatment performed at a high temperature of 1400 ° C. or higher, such as production of a thin plate-shaped sintered member such as a cutting tool and a sputtering target material. .
【0002】[0002]
【従来の技術】近年、切削工具、スパッタリングターゲ
ット材等として、セラミックス系部材又はこれらの複合
材料を用いたものが多くなってきている。セラミックス
系部材又はこれらの複合材料を充分に高密度焼結するた
めには、高温、高圧でHIP処理する必要がある。2. Description of the Related Art In recent years, as a cutting tool, a sputtering target material, etc., a ceramic material or a composite material thereof has been used more and more. In order to sufficiently sinter the ceramic-based member or the composite material thereof with high density, it is necessary to carry out HIP treatment at high temperature and high pressure.
【0003】HIP処理とは、粉末又は粉末成形体等の
被処理体をカプセルに封入して、高温下で高圧の流体圧
力を作用させて、被処理体を高密度焼結する方法であ
る。HIP法の場合には、1000〜2000kgf/
cm2 といった大きな圧力を作用させることが可能であ
る。薄板状部材や小物部品でも、いびつに変形させるこ
となく、効率良く製造できるHIP法として、特開平3
−94002号公報、特開平4−99207号公報に、
厚さ30〜300μmの金属箔を袋状に形成してなる箔
カプセルを用いる方法が提案されている。箔カプセル
は、ステンレス、チタンやタンタル等の金属箔2枚の各
3辺をYAGレーザ溶接、TIG溶接、又はシーム溶接
手段等により接合して、残り1辺が開口部に相当する袋
状体を形成し、この袋状体内に被処理物たる粉末又は粉
末成形品を収納して、内部を真空脱気した後、この開口
部を上記溶接手段により接合して密封することにより製
作される。箔カプセルを用いるHIP法は、カプセル自
体の剛性が非常に小さいため、被処理体に対する等方加
圧処理が有効に行えるという利点がある。The HIP treatment is a method of encapsulating an object to be treated such as a powder or a powder compact in a capsule and applying a high fluid pressure at a high temperature to sinter the object to high density. In the case of the HIP method, 1000-2000 kgf /
It is possible to apply a large pressure such as cm 2 . As a HIP method capable of efficiently manufacturing even thin plate-shaped members and small parts without being deformed into a distorted shape, Japanese Patent Application Laid-Open No. Hei 3
-94002 and JP-A-4-99207,
A method of using a foil capsule formed by forming a metal foil having a thickness of 30 to 300 μm in a bag shape has been proposed. The foil capsule is a bag-like body in which three sides of two metal foils such as stainless steel, titanium, and tantalum are joined by YAG laser welding, TIG welding, or seam welding means, and the remaining one side corresponds to the opening. After being formed, the powder or powder molded product as the object to be processed is housed in the bag-shaped body, the inside is deaerated in vacuum, and the opening is joined and sealed by the welding means. The HIP method using a foil capsule has an advantage that the isotropic pressure treatment can be effectively performed on the object to be processed because the rigidity of the capsule itself is very small.
【0004】[0004]
【発明が解決しようとする課題】しかし、箔カプセルの
材料としてステンレスやチタンを用いる場合、これらの
融点は1400℃以下と低いため、1500℃以上での
HIP処理に使用することはできない。タンタルは融点
が約3000℃と高いために使用することは可能である
が、カプセルの製作に際して行うタンタル箔の接合に関
して、次のような問題がある。However, when stainless steel or titanium is used as the material of the foil capsule, the melting point of these materials is as low as 1400 ° C. or lower, so that it cannot be used for HIP treatment at 1500 ° C. or higher. Tantalum can be used because it has a high melting point of about 3000 ° C., but there are the following problems with respect to the joining of tantalum foils that is performed when manufacturing capsules.
【0005】すなわち、YAGレーザ溶接では、箔を隙
間なく押さえつける必要があるために装置の構造が複雑
となり、特に金属箔の厚み100μm以下では、箔の全
長にわたって均一に押さえつけることが困難であるとい
う一般的な問題点の上に、タンタルの光反射性のために
レーザを反射してしまい、うまく溶接できないという問
題もある。また、TIG溶接は不活性ガスを流しながら
箔と電極との間にアークを発生させて溶接する方法であ
るが、タンタルは酸化しやすいため、不活性ガス雰囲気
下で行うにも拘らず、アーク照射によるタンタル箔の酸
化を充分に防止できない。さらに、30〜300μmと
いった薄い箔を気密に溶接することは困難である。この
ため、TIG溶接により気密性に優れたタンタル箔のカ
プセルを製作することは困難である。That is, in YAG laser welding, since it is necessary to press the foil without a gap, the structure of the apparatus becomes complicated, and it is generally difficult to press the foil evenly over the entire length of the metal foil with a thickness of 100 μm or less. In addition to the above problem, there is also a problem that the laser is reflected due to the light reflectivity of tantalum and welding cannot be performed well. Further, TIG welding is a method in which an arc is generated between the foil and the electrode while flowing an inert gas to perform welding, but since tantalum is easily oxidized, the TIG welding is performed in an inert gas atmosphere, but the arc is used. Oxidation of tantalum foil due to irradiation cannot be sufficiently prevented. Furthermore, it is difficult to weld a thin foil of 30 to 300 μm in an airtight manner. Therefore, it is difficult to manufacture a tantalum foil capsule having excellent airtightness by TIG welding.
【0006】一方、シーム抵抗溶接は、図5に示すよう
に円板電極1で2枚のタンタル箔2、2を加圧しながら
通電し溶接する方法である。通電したときの接触抵抗及
びタンタル箔2自体の抵抗により発熱し、接合面が溶融
してナゲットを形成し、円板電極1を回転させながら電
流を継続させることにより、ナゲットが重ね合わさって
全長にわたって接合される。このようにして接合を行う
シーム溶接手段では、タンタルの酸化しやすい性質、及
び光反射性に影響されることはない。しかし、円板電極
1には一般に銅合金製のロールが用いられるため、次の
ような問題がある。すなわち、タンタルは一般に銅と合
金化しやすい性質を有しているため、電極に用いている
銅とタンタル箔とが合金化し、タンタル箔2が電極1に
巻きついて溶接を続けることが困難になる。巻きつくこ
となく溶接ができても、電極1が接したタンタル箔2の
表面に電極1の成分である銅合金が付着し、付着部分
は、1100℃以上のHIP処理中に溶融し、カプセル
破損の原因となる。このような理由から、銅製電極を用
いてシーム溶接によりカプセルを作製することができて
も、セラミックス系焼結部材を製造するのに必要な14
00℃以上のHIP処理に用いることはできないのが現
状である。On the other hand, seam resistance welding is a method of welding by energizing two tantalum foils 2 and 2 with a disc electrode 1 while applying pressure, as shown in FIG. Heat is generated due to the contact resistance when energized and the resistance of the tantalum foil 2 itself, the joining surface is melted to form a nugget, and the current is continued while rotating the disc electrode 1, so that the nuggets are overlapped over the entire length. To be joined. The seam welding means for joining in this manner is not affected by the oxidizable property of tantalum and the light reflectivity. However, since a roll made of a copper alloy is generally used for the disc electrode 1, there are the following problems. That is, since tantalum generally has a property of being easily alloyed with copper, copper used in the electrode is alloyed with the tantalum foil, and it becomes difficult to wind the tantalum foil 2 around the electrode 1 and continue welding. Even if welding can be done without winding, the copper alloy that is a component of the electrode 1 adheres to the surface of the tantalum foil 2 in contact with the electrode 1, and the adhered part melts during HIP treatment at 1100 ° C or higher, causing capsule damage. Cause of. For this reason, even if a capsule can be produced by seam welding using a copper electrode, it is necessary to produce a ceramic-based sintered member.
At present, it cannot be used for HIP treatment at 00 ° C. or higher.
【0007】本発明はこのような技術的背景に鑑みてな
されたものであり、その目的とするところは、タンタル
箔カプセルを作成するにあたり存在する問題点を解決し
て、セラミックス系被処理体の焼結、接合において必要
となるHIP処理条件、すなわち1400℃以上のHI
P処理に耐える箔カプセルの製作方法を提供することに
ある。The present invention has been made in view of the above technical background, and an object of the present invention is to solve the problems existing in producing a tantalum foil capsule and to provide a ceramic-based object to be processed. HIP processing conditions required for sintering and joining, that is, HI of 1400 ° C or higher
It is to provide a method of manufacturing a foil capsule that can withstand P treatment.
【0008】[0008]
【課題を解決するための手段】請求項1に記載の熱間等
方加圧処理用カプセルの製作方法は、セラミックスを主
成分とする粉末原料又は粉末成形体等の被処理体を、3
0〜300μmの厚さのタンタル箔内に収納する第1工
程;前記被処理体を前記タンタル箔内に、前記タンタル
箔を接合することで封入し、カプセルを製作する第2工
程;とからなり、前記接合は、モリブデン及びタングス
テンの少なくともいずれか一方を90%以上含有する金
属で構成される電極を用いたシーム溶接手段により拡散
接合を行うことを特徴とする。A method of manufacturing a capsule for hot isostatic pressing according to claim 1, wherein a powder raw material or a powder compact containing ceramic as a main component is processed into
A first step of housing in a tantalum foil having a thickness of 0 to 300 μm; a second step of producing a capsule by encapsulating the object to be treated in the tantalum foil by bonding the tantalum foil, and a second step; The joining is performed by diffusion joining by seam welding means using an electrode made of a metal containing 90% or more of at least one of molybdenum and tungsten.
【0009】請求項2に記載の熱間等方加圧処理用カプ
セルの製作方法は、セラミックスを主成分とする粉末原
料又は粉末成形体等の被処理体を、30〜300μmの
厚さのタンタル箔内に収納する第1工程;前記被処理体
を前記タンタル箔内に、前記タンタル箔を接合すること
で封入し、カプセルを製作する第2工程;とからなり、
前記接合は、タンタル箔と電極との間に、モリブデン及
びタングステンの少なくともいずれか一方を90%以上
含有する金属箔を介在させてシーム溶接手段により拡散
接合を行うことを特徴とする。According to a second aspect of the present invention, there is provided a method of manufacturing a capsule for hot isostatic pressing, in which an object to be treated such as a powder raw material or a powder compact containing ceramic as a main component is tantalum having a thickness of 30 to 300 μm. A first step of accommodating in a foil; a second step of producing the capsule by encapsulating the object to be treated in the tantalum foil by joining the tantalum foil, and
The joining is characterized in that the metal foil containing 90% or more of at least one of molybdenum and tungsten is interposed between the tantalum foil and the electrode to perform diffusion joining by seam welding means.
【0010】[0010]
【作用】モリブデン及びタングステンは、導電率が高く
且つ高融点金属である。モリブデン及びタングステンの
少なくともいずれか一方を90%以上含有する金属材料
でシーム溶接手段の電極を構成し、これに通電すると、
抵抗発熱で接合部が高温状態となっても、電極が溶融し
たり、タンタル箔と合金化したりしない。よって、請求
項1の方法では、このような金属で構成され電極を用い
てシーム溶接を行うので、タンタル箔と合金化すること
なくタンタル箔の接合部を高温下で加圧することができ
る。高温高圧下で、2枚のタンタル箔は拡散接合するの
で、気密性に優れたカプセルを製作できる。Function: Molybdenum and tungsten are high-conductivity and high-melting-point metals. When an electrode of the seam welding means is made of a metal material containing 90% or more of at least one of molybdenum and tungsten, and when electricity is applied to the electrode,
The electrodes do not melt or alloy with the tantalum foil even when the temperature of the joint becomes high due to resistance heating. Therefore, in the method of the first aspect, since seam welding is performed using the electrode made of such a metal, the joint portion of the tantalum foil can be pressed at high temperature without alloying with the tantalum foil. Since the two tantalum foils are diffusion-bonded at high temperature and high pressure, it is possible to manufacture a capsule having excellent airtightness.
【0011】請求項2に記載の方法では、銅電極を用い
たとしても、タンタル箔と電極との間に介在している上
記金属で構成される金属箔が、タンタル箔と銅電極との
合金化やタンタル箔の銅電極への付着を防止する。よっ
て、タンタル箔の接合部を高温高圧状態とすることがで
き、拡散接合により気密性の高いカプセルを製作でき
る。According to the second aspect of the present invention, even if a copper electrode is used, the metal foil composed of the above metal interposed between the tantalum foil and the electrode is an alloy of the tantalum foil and the copper electrode. Of carbonization and adhesion of tantalum foil to copper electrodes. Therefore, the joint portion of the tantalum foil can be brought to a high temperature and high pressure state, and a highly airtight capsule can be manufactured by diffusion joining.
【0012】気密性が高く、且つ高融点金属であるタン
タル箔カプセルを用いれば、従来ステンレス箔等で行な
えなかった高温高圧のHIP処理が可能となる。By using a tantalum foil capsule having a high airtightness and a high melting point metal, it is possible to carry out a high temperature and high pressure HIP treatment which could not be performed with a conventional stainless steel foil or the like.
【0013】[0013]
【実施例】本発明は、タンタル箔カプセルの製作に際し
て生じる接合手段の問題を、タンタルの拡散接合しやす
い性質を利用することにより解決し、本発明の完成に到
ったものである。以下、本発明の熱間等方加圧処理用カ
プセルの製作方法を、図1に基づいて説明する。The present invention has solved the problem of joining means that occurs during the production of tantalum foil capsules by utilizing the property of tantalum that facilitates diffusion joining, and has completed the present invention. Hereinafter, a method for producing the hot isostatic pressing capsule of the present invention will be described with reference to FIG.
【0014】図1(a)において、5はHIP処理用金
属カプセルを製作するための袋状体で、2枚の矩形状の
タンタル箔6、6が一方に袋入口7を残した状態で、残
り3辺が互いに後述のシーム溶接手段により接合されて
いる。このような袋状体5内に、被処理体8を袋入口7
より収納する。その後、袋状体内を真空脱気して(図1
(b)参照)、2枚のタンタル箔6、6を電極ロール
9、9で挟持して、加圧しながら通電し、矢印方向にロ
ール9、9を移動させていくことにより、開口部たる袋
入口7をシーム溶接する(図1(c)参照)。図1
(d)は、このようにして気密に製作された箔カプセル
10を示している。In FIG. 1 (a), 5 is a bag-like body for producing a metal capsule for HIP processing, in which two rectangular tantalum foils 6, 6 leave a bag inlet 7 on one side, The remaining three sides are joined to each other by seam welding means described below. In the bag-shaped body 5 as described above, the object 8 to be processed is placed in the bag inlet 7
Store more. After that, the bag-shaped body is vacuum-degassed (see FIG. 1).
(See (b)) Two tantalum foils 6 and 6 are sandwiched between electrode rolls 9 and 9 and are energized while being pressurized, and the rolls 9 and 9 are moved in the direction of the arrow to form a bag as an opening. The inlet 7 is seam welded (see FIG. 1 (c)). Figure 1
(D) shows the foil capsule 10 thus airtightly manufactured.
【0015】本発明に用いられるタンタル箔6の厚みは
30〜300μmで、当該範囲内において、箔材質の柔
軟性、塑性変形性、切断強度などから適宜選択される。
厚みが30μm未満である場合、溶接部に不良が出来や
すく気密に溶接することが困難である。一方、厚みが3
00μmを越えると、HIP処理時にカプセルがいびつ
に変形し、被処理体8を効率良く回収することが困難に
なるからである。The tantalum foil 6 used in the present invention has a thickness of 30 to 300 μm, and is appropriately selected within the above range from the flexibility, plastic deformability and cutting strength of the foil material.
If the thickness is less than 30 μm, the welded portion is likely to have a defect, and it is difficult to weld hermetically. On the other hand, the thickness is 3
This is because if it exceeds 00 μm, the capsule will be distorted during HIP processing, and it will be difficult to efficiently collect the object 8 to be processed.
【0016】尚、タンタル箔6、6のカプセル内部側
に、窒化ホウ素等のセラミックス系離型材を塗布してお
くことが好ましい。これにより、HIP処理時に、被処
理体8とカプセル10とが付着するのが防止されて、H
IP処理後のカプセル10の除去を容易にするという効
果がある。袋状体1の3辺及び袋入口7の接合は、シー
ム溶接手段を用いて次のようにして行う。It should be noted that it is preferable to apply a ceramic-based release material such as boron nitride to the inside of the capsules of the tantalum foils 6, 6. This prevents the target object 8 and the capsule 10 from adhering to each other during the HIP process, and
This has the effect of facilitating the removal of the capsule 10 after IP treatment. The three sides of the bag-shaped body 1 and the bag inlet 7 are joined using seam welding means as follows.
【0017】電極9、9とタンタル箔6、6とを合金化
させることなく接合する方法として、電極9をタンタル
箔6と合金化しにくい材料で構成する請求項1に記載の
方法、又は電極9とタンタル箔6との間に、タンタル箔
6と合金化しにくく且つ高融点材料からなる金属箔を介
在させた状態で接合する請求項2に記載の方法がある。
以下、介在に用いられる金属箔を、「介在用金属箔」と
いう。As a method for joining the electrodes 9 and 9 and the tantalum foils 6 and 6 without alloying them, the electrode 9 is made of a material which is difficult to alloy with the tantalum foil 6, or the electrode 9 is used. There is a method according to claim 2, in which a metal foil made of a high-melting point material which is difficult to alloy with the tantalum foil 6 is interposed between and the tantalum foil 6.
Hereinafter, the metal foil used for interposition is referred to as "intervening metal foil".
【0018】請求項1の方法では、電極9として、充分
に抵抗発熱するように導電率が高いもの、かつタンタル
箔と合金化しない材料、具体的には、モリブデン、タン
グステンの少なくともいずれか一方を90%以上含有す
る純金属材料又は合金材料で構成された電極を用いる。
電極に用いられる上記材料の融点は2000℃以上と高
く且つ導電率が約30%程度と高いからである。モリブ
デン及び/又はタングステンの含有率が上記範囲であれ
ば、他の材料を含有してもよい。他の材料としては、モ
リブデン又はタングステンの導電率を極端に低下させな
い材料、例えば、チタン、ジルコニウム、炭素等を含有
することができる。In the method of claim 1, as the electrode 9, a material having a high conductivity so as to generate sufficient resistance heat and a material which does not alloy with the tantalum foil, specifically, at least one of molybdenum and tungsten is used. An electrode composed of a pure metal material or an alloy material containing 90% or more is used.
This is because the melting point of the above material used for the electrode is as high as 2000 ° C. or higher and the conductivity is as high as about 30%. Other materials may be contained as long as the content of molybdenum and / or tungsten is in the above range. As another material, a material that does not extremely reduce the conductivity of molybdenum or tungsten, for example, titanium, zirconium, carbon, or the like can be contained.
【0019】請求項2の方法、すなわち、介在物用金属
箔を用いて接合を行う方法では、電極材料としては充分
に抵抗発熱する材料であればよい。よって、従来の誘電
率が高い電極材料であるクロム銅、純銅等を用いること
ができる。介在用金属箔に用いられる金属としては、電
極及びタンタル箔のいずれとも合金化しにくい高融点金
属、例えば、タングステン、モリブデンなどが挙げられ
る。介在用金属箔の厚みは、電極とタンタル箔との直接
接触を防止できる厚みであれば十分であることから、3
0〜100μmが好ましく用いられる。In the method of claim 2, that is, in the method of joining by using the metal foil for inclusions, the electrode material may be any material capable of generating sufficient resistance heat. Therefore, it is possible to use chromium copper, pure copper, or the like, which is a conventional electrode material having a high dielectric constant. Examples of the metal used for the intervening metal foil include refractory metals that are difficult to alloy with both the electrode and the tantalum foil, such as tungsten and molybdenum. The thickness of the intervening metal foil is sufficient as long as it can prevent direct contact between the electrode and the tantalum foil.
0-100 μm is preferably used.
【0020】図2に、介在用金属箔を用いてシーム溶接
する方法を示す。タンタル箔6と銅電極ロール9との間
には、介在用金属箔11としてタングステン箔が挟持さ
れている。タングステン箔11は、銅電極9とタンタル
箔6との合金化を阻止するとともに、電極9、9間、タ
ンタル箔6及び介在物10の接触抵抗により発熱する。FIG. 2 shows a method of seam welding using an intervening metal foil. A tungsten foil is sandwiched between the tantalum foil 6 and the copper electrode roll 9 as an intervening metal foil 11. The tungsten foil 11 prevents alloying between the copper electrode 9 and the tantalum foil 6, and generates heat due to the contact resistance between the electrodes 9 and 9 and the tantalum foil 6 and the inclusions 10.
【0021】上記いずれの方法においても、電極9、9
間を通電すると、接合部は高温になるとともに、上下一
対の電極ロール9、9にてタンタル箔6は加圧されてい
る状態にある。このような高温高圧下では、拡散接合し
やすいタンタル箔は、接合面にて溶融することなく、拡
散接合する。なお、シーム溶接作業は、いずれの場合
も、タンタルの酸化防止の観点から真空下又は不活性ガ
ス雰囲気下で行うことが好ましい。In any of the above methods, the electrodes 9, 9
When electricity is applied to the space, the temperature of the joint becomes high and the tantalum foil 6 is being pressed by the pair of upper and lower electrode rolls 9, 9. Under such high temperature and high pressure, the tantalum foil, which is easily diffusion-bonded, is diffusion-bonded without melting at the bonding surface. In any case, the seam welding operation is preferably performed under vacuum or in an inert gas atmosphere from the viewpoint of preventing the oxidation of tantalum.
【0022】以上のようにして製作された箔カプセル1
0は、接合部が拡散接合されているので、高い気密性が
確保されており、高温高圧のHIP処理に耐えることが
できる。従って、本発明の方法により製作されたカプセ
ル10を用いれば、1400℃以上の高温でHIP処理
しなければならない焼結部材の製造も可能となる。よっ
て、被処理体8として、窒化ケイ素、炭化ケイ素等の非
酸化物系セラミックス、非酸化物系セラミックスとアル
ミナ等の酸化物系セラミックスとの複合セラミックス、
非酸化物系セラミックス又は酸化物系セラミックスを金
属、非金属等のウイスカで複合強化した複合材料等から
なる、粉末又は粉末成形体を用いることもできる。The foil capsule 1 manufactured as described above
In No. 0, since the bonding portion is diffusion bonded, high airtightness is ensured and it is possible to withstand HIP treatment at high temperature and high pressure. Therefore, by using the capsule 10 manufactured by the method of the present invention, it is possible to manufacture a sintered member that must be HIP processed at a high temperature of 1400 ° C. or higher. Therefore, as the object 8 to be processed, non-oxide ceramics such as silicon nitride and silicon carbide, composite ceramics of non-oxide ceramics and oxide ceramics such as alumina,
It is also possible to use a powder or a powder compact made of a non-oxide ceramics or a composite material obtained by composite-reinforced non-oxide ceramics with a whisker such as metal or non-metal.
【0023】本発明により製作されたカプセル10を用
いる場合のHIP処理条件は、次のような範囲内で適宜
選択できる。HIP処理温度は2200℃までの高温と
することが可能であり、当該温度範囲内で、被処理体8
の種類により適宜選択できる。例えば、好適なHIP処
理温度は、アルミナ系では1400〜1600℃、窒化
珪素、炭化珪素系では1700〜2000℃程度であ
る。HIP処理圧力も1000〜2000kgf/cm
2 の範囲内で被処理体8の種類により適宜選択できる。
また、保持時間は被処理体の寸法、熱伝導性から適宜選
択されるが、通常1〜5時間である。The HIP processing conditions when the capsule 10 manufactured according to the present invention is used can be appropriately selected within the following range. The HIP processing temperature can be as high as 2200 ° C., and within the temperature range, the object to be processed 8
Can be appropriately selected depending on the type. For example, a suitable HIP treatment temperature is about 1400 to 1600 ° C. for alumina system and about 1700 to 2000 ° C. for silicon nitride and silicon carbide system. HIP processing pressure is also 1000-2000 kgf / cm
It can be appropriately selected within the range of 2 depending on the type of the object 8 to be processed.
The holding time is appropriately selected depending on the size of the object to be processed and the thermal conductivity, but is usually 1 to 5 hours.
【0024】吸着ガス等が多く、HIP処理時にこの吸
着ガスが発生しやすい被処理体8の場合には、チタン
箔、ジルコニウム箔を、被処理体8とともにカプセル1
0内に入れて封入することが好ましい。チタン箔、ジル
コニウム箔は被処理体8からの発生ガスと反応して、当
該発生ガスがタンタル箔2と反応するのを防止して、タ
ンタル箔2が炭化、酸化等により延性がなくなり、カプ
セル10として機能しなくなるのを防止できるからであ
る。また、同様の理由により、カプセル10外部にチタ
ン箔、ジルコニウム箔を巻いて、HIP処理時の圧媒ガ
ス中の不純物等とタンタル箔との反応を防止することが
好ましい。In the case of the object 8 to be treated, which has a large amount of adsorbed gas and is likely to generate this adsorbed gas during the HIP process, a titanium foil and a zirconium foil together with the object 8 to be treated are encapsulated.
It is preferable to put in 0 and encapsulate. The titanium foil and the zirconium foil react with the gas generated from the object to be treated 8 to prevent the gas generated from reacting with the tantalum foil 2, and the tantalum foil 2 loses its ductility due to carbonization, oxidation, etc. This is because it can be prevented from functioning as. For the same reason, it is preferable to wrap a titanium foil or a zirconium foil outside the capsule 10 to prevent the reaction between impurities and the like in the pressure medium gas at the time of HIP treatment and the tantalum foil.
【0025】HIP処理後、HIP装置から取り出した
カプセル10は、HIP処理により再結晶を生じてもろ
くなっているので、軽くハンマー等でたたくことにより
除去でき、簡単に内部の被処理体8を取り出すことがで
きる。 〔具体的実施例〕 実施例1;被処理体として、アルミナ−炭化珪素複合セ
ラミックス粉末を30mm×30mm×5mmの形状に
成形圧力1ton/cm2 の圧力で金型成形を行った
後、予備焼結によりバインダーを除去したセラミックス
成形体を用いた。After the HIP process, the capsule 10 taken out of the HIP device is fragile even if recrystallized due to the HIP process, so it can be removed by tapping it lightly with a hammer or the like, and the object 8 to be processed can be taken out easily. be able to. [Specific Examples] Example 1; Alumina-silicon carbide composite ceramic powder was molded into a shape of 30 mm x 30 mm x 5 mm at a molding pressure of 1 ton / cm 2 as a target object, and then pre-baked. A ceramic molded body from which the binder was removed by binding was used.
【0026】厚さ50μmのタンタル箔を100mm角
の形状に2枚切断し、これらの箔を重ねた部分の3方を
シーム溶接手段により拡散接合し、袋状体に作成した。
シーム溶接条件としては、真空下で純モリブデン製電極
を用い、電極加圧力12.5〜14kg、溶接電流27
50A、溶接速度1.5m/minとした。次いで、こ
の袋状体の開口部に、上記セラミックス成形体をジルコ
ニウム箔とともに挿入した。袋状体内を脱気した後、開
口部を上記と同様の条件でシーム溶接手段を用いて拡散
接合し、被処理体を真空封入してカプセルを製作した。Two 50 μm-thick tantalum foils were cut into a 100 mm square shape, and three sides of the foils were overlap-bonded by seam welding to form a bag.
As the seam welding conditions, an electrode made of pure molybdenum under vacuum is used, the electrode pressure is 12.5 to 14 kg, and the welding current is 27.
The welding speed was 50 A and the welding speed was 1.5 m / min. Then, the ceramic molded body was inserted together with the zirconium foil into the opening of the bag-shaped body. After the bag-shaped body was deaerated, the opening was diffusion-bonded using the seam welding means under the same conditions as above, and the object was vacuum-sealed to produce a capsule.
【0027】図3に、作成したカプセルのタンタル箔接
合部分の50倍(図3(a))及び100倍(図3
(b))の光学顕微鏡写真を示す。これらの写真から、
研磨状態(ノーエッチ)では、2枚のタンタル箔が隙間
なく接合されていることがわかる。このタンタル箔カプ
セルを、H2 SO4:HNO3:HF: H2 O=3:2:
4:10の割合で混合調製したエッチング液に浸漬処理
した。エッチング後のタンタル箔接合部分の50倍及び
100倍の光学顕微鏡写真を図4(a)及び図4(b)
に示す。図4からわかるように、接合部において金属の
溶融組織は観察されなかった。上下2枚の金属箔の間に
わずかながら隙間が存在するが、これはエッチング処理
により箔表面の酸化被膜が除去されてできたもので、接
合状態にはなんら支障があることを示すものではない。
箔の他の部分も同様の断面を示していた。このことか
ら、接合部が良好な拡散接合状態にあることが確認でき
た。FIG. 3 shows 50 times (FIG. 3 (a)) and 100 times (FIG. 3) the tantalum foil joint portion of the prepared capsule.
The optical microscope photograph of (b)) is shown. From these photos,
It can be seen that in the polished state (no etching), the two tantalum foils are joined together without a gap. This tantalum foil capsule was converted into H 2 SO 4 : HNO 3 : HF: H 2 O = 3: 2:
Immersion treatment was performed in an etching solution prepared by mixing at a ratio of 4:10. 4A and 4B are 50 × and 100 × optical micrographs of the tantalum foil joint portion after etching.
Shown in. As can be seen from FIG. 4, no metal melt structure was observed at the joint. There is a slight gap between the upper and lower two metal foils, but this is because the oxide film on the foil surface was removed by the etching process, and it does not indicate that there is any hindrance to the bonding state. .
Other parts of the foil showed similar cross sections. From this, it was confirmed that the bonded portion was in a favorable diffusion bonding state.
【0028】次いで、上記により作成した箔カプセルを
HIP装置に配置し、1500℃、2000kgf/c
m2 で1時間HIP処理を行った。HIP処理後、カプ
セルを除去し、被処理体を取り出したところ、密度ムラ
もなく、ほぼ真密度に焼結されたセラミックス焼結体を
得ることができた。Then, the foil capsule prepared as described above is placed in a HIP device, and the temperature is 1500 ° C. and 2000 kgf / c.
HIP treatment was performed at m 2 for 1 hour. After the HIP treatment, the capsules were removed and the object to be treated was taken out. As a result, it was possible to obtain a ceramics sintered body that was sintered to a substantially true density without density unevenness.
【0029】[0029]
【発明の効果】本発明のカプセル製作方法によれば、高
融点材料であるタンタル箔を用いて隙間なく接合された
気密性に優れたカプセルを製作することができる。従っ
て、本発明の方法により製作したカプセルを用いること
により、従来のステンレス等のカプセルでは行えなかっ
た1400℃以上の高温、高圧でHIP処理することが
可能となり、非酸化物系セラミックスや、ウィスカとセ
ラミックスとの複合材料等からなる薄板状の焼結体を製
造することができる。よって、本発明の方法により製作
されたカプセルを利用することにより、近年、需要が高
まってきているセラミックス製の薄板状の焼結部材であ
るスパッタリングターゲット、ブレード状工具、砥石等
の製造が可能となる。According to the capsule manufacturing method of the present invention, it is possible to manufacture a capsule having excellent airtightness, which is joined without any gap using tantalum foil which is a high melting point material. Therefore, by using the capsule manufactured by the method of the present invention, it becomes possible to perform HIP treatment at a high temperature and pressure of 1400 ° C. or higher, which is not possible with conventional capsules such as stainless steel, and it is possible to perform non-oxide ceramics and whiskers It is possible to manufacture a thin plate-shaped sintered body made of a composite material or the like with ceramics. Therefore, by using the capsule manufactured by the method of the present invention, it is possible to manufacture a sputtering target, a blade-shaped tool, a grindstone, etc., which is a thin plate-shaped sintered member made of ceramics, which has been in increasing demand in recent years. Become.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明のカプセル製作方法を説明するための図
である。FIG. 1 is a diagram for explaining a capsule manufacturing method of the present invention.
【図2】請求項2にかかる製作方法を説明するための図
である。FIG. 2 is a drawing for explaining the manufacturing method according to claim 2;
【図3】実施例1で製作したカプセルの接合部の金属組
織を示す顕微鏡写真である。FIG. 3 is a micrograph showing a metal structure of a joint portion of the capsule manufactured in Example 1.
【図4】実施例1で製作したカプセルのエッチング後の
接合部の金属組織を示す顕微鏡写真である。FIG. 4 is a micrograph showing a metal structure of a joint portion of the capsule manufactured in Example 1 after etching.
【図5】シーム溶接手段を説明するための図である。FIG. 5 is a diagram for explaining seam welding means.
5 袋状体 6 タンタル箔 8 被処理体 9 電極 10 カプセル 11 介在用金属箔 5 Bag-shaped body 6 Tantalum foil 8 Object to be treated 9 Electrode 10 Capsule 11 Metal foil for interposition
Claims (2)
は粉末成形体等の被処理体を、30〜300μmの厚さ
のタンタル箔内に収納する第1工程;前記被処理体を前
記タンタル箔内に、前記タンタル箔を接合することで封
入し、カプセルを製作する第2工程;とからなり、前記
接合は、モリブデン及びタングステンの少なくともいず
れか一方を90%以上含有する金属材料で構成される電
極を用いたシーム溶接手段により拡散接合を行うことを
特徴とする熱間等方加圧処理用カプセルの製作方法。1. A first step of accommodating an object to be treated such as a powder raw material or a powder compact having ceramics as a main component in a tantalum foil having a thickness of 30 to 300 μm; the object to be treated in the tantalum foil. And a second step of producing a capsule by encapsulating the tantalum foil by joining, and the joining is an electrode made of a metal material containing 90% or more of at least one of molybdenum and tungsten. A method for producing a capsule for hot isostatic pressing, characterized in that diffusion bonding is performed by seam welding means using.
は粉末成形体等の被処理体を、30〜300μmの厚さ
のタンタル箔内に収納する第1工程;前記被処理体を前
記タンタル箔内に、前記タンタル箔を接合することで封
入し、カプセルを製作する第2工程;とからなり、前記
接合は、タンタル箔と電極との間に、モリブデン及びタ
ングステンの少なくともいずれか一方を90%以上含有
する金属箔を介在させてシーム溶接手段により拡散接合
を行うことを特徴とする熱間等方加圧処理用カプセルの
製作方法。2. A first step of accommodating an object to be treated such as a powder raw material or a powder compact containing ceramics as a main component in a tantalum foil having a thickness of 30 to 300 μm; the object to be treated in the tantalum foil. And a second step of manufacturing by encapsulating the tantalum foil by bonding to form a capsule; and the bonding is performed by applying 90% or more of at least one of molybdenum and tungsten between the tantalum foil and the electrode. A method for producing a capsule for hot isostatic pressing, characterized in that diffusion bonding is performed by seam welding means with a metal foil contained therein interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5160271A JPH06345545A (en) | 1993-06-03 | 1993-06-03 | Production of capsule for hot isostatic pressing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5160271A JPH06345545A (en) | 1993-06-03 | 1993-06-03 | Production of capsule for hot isostatic pressing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06345545A true JPH06345545A (en) | 1994-12-20 |
Family
ID=15711396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5160271A Pending JPH06345545A (en) | 1993-06-03 | 1993-06-03 | Production of capsule for hot isostatic pressing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06345545A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004488A (en) * | 2010-06-21 | 2012-01-05 | Nippon Avionics Co Ltd | Connecting method and connecting device of connecting member for solar cell |
| JP2012004182A (en) * | 2010-06-14 | 2012-01-05 | Nippon Avionics Co Ltd | Connection method and apparatus for solar battery connecting member |
| GB2549785A (en) * | 2016-04-29 | 2017-11-01 | Advanced Interactive Mat Science Ltd | Methods and apparatus for hot isostatic pressing |
| JP7755359B1 (en) * | 2025-04-16 | 2025-10-16 | 大学共同利用機関法人自然科学研究機構 | Method for manufacturing high melting point member having interface |
-
1993
- 1993-06-03 JP JP5160271A patent/JPH06345545A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004182A (en) * | 2010-06-14 | 2012-01-05 | Nippon Avionics Co Ltd | Connection method and apparatus for solar battery connecting member |
| JP2012004488A (en) * | 2010-06-21 | 2012-01-05 | Nippon Avionics Co Ltd | Connecting method and connecting device of connecting member for solar cell |
| GB2549785A (en) * | 2016-04-29 | 2017-11-01 | Advanced Interactive Mat Science Ltd | Methods and apparatus for hot isostatic pressing |
| US11278961B2 (en) | 2016-04-29 | 2022-03-22 | Sagittite Limited | Containment for hot isostatic pressing and vacuum degassing apparatus |
| JP7755359B1 (en) * | 2025-04-16 | 2025-10-16 | 大学共同利用機関法人自然科学研究機構 | Method for manufacturing high melting point member having interface |
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