JPH0650978Y2 - Jig for bonded SOI semiconductor substrate manufacturing - Google Patents

Description

[Detailed Description of the Invention] [Outline] In the work of stacking two wafers to be bonded together, the periphery of each wafer can be almost exactly overlapped, and a useless and useless area can be reduced. A jig for SOI semiconductor substrate manufacturing that enables the bonding so that the two semiconductor wafers can be overlapped in a vacuum so that the periphery of the semiconductor wafer is accurately aligned.
A semiconductor wafer made of a ring-shaped body such as quartz, which has an inner circumference slightly larger than the outer circumference of the semiconductor substrates to be bonded and mounted on a flat plate heater for the purpose of providing a jig for manufacturing an SOI semiconductor substrate. For the main body, the semiconductor wafer guide forming the main body, is provided with a slit for inserting a semiconductor wafer inductor made of a rod-shaped body used for the work of sequentially mounting the semiconductor substrates to be bonded together, or After placing the semiconductor substrates to be bonded,
The thin bottom plate that can be pulled out is configured to be added to the above-mentioned main body, that is, the semiconductor wafer guide including a ring-shaped body.

[Industrial application field]

The present invention relates to a jig for manufacturing a bonded SOI semiconductor substrate. In particular, in the work of stacking two wafers to be bonded together, the periphery of each wafer can be almost exactly overlapped, and the useless and unusable area can be reduced. A jig for manufacturing a substrate.

[Conventional technology]

One of the methods for manufacturing a so-called SOI substrate is to oxidize at least one of two silicon wafers, and at least one surface thereof has a thickness of 1 μm or less, for example, a thickness of 0.5 μm.
Silicon dioxide film is formed, and these two silicon wafers are stacked in such a manner that the above silicon dioxide film serves as an intermediate layer, and heated to about 800 to 1,200 ° C. to form two silicon wafers. There is known a method of manufacturing a bonding type SOI substrate in which bonding is performed and an upper layer silicon wafer is thinned by polishing or etching.

In the process of manufacturing the bonded SOI substrate, the oxide semiconductor film 3 is formed on at least one surface of at least one of the two semiconductor substrates 1 and 2, and the oxide semiconductor film 3 is used to form the oxide semiconductor film 3. In general, the two semiconductor substrates 1 and 2 are integrated by placing them on the flat plate heater 4 so that the two semiconductor substrates 1 and 2 are in contact with each other.

The present invention is a jig for manufacturing a bonded SOI semiconductor substrate in which the two semiconductor substrates 1 and 2 are bonded and heated to be integrated.

[Problems to be solved by the invention]

To stack the above two semiconductor wafers on top of each other before heating and integrating them, it is desirable to make them in a vacuum in order to prevent dust from getting caught, but in the conventional technology, an appropriate jig is available. I can't. In particular, there is a drawback in that it is not easy to accurately overlap the peripheral portions of the wafers, and regions that cannot be accurately overlapped are naturally unusable, so that the entire region of the wafer cannot be effectively used.

The object of the present invention is to eliminate this drawback, and it is possible to stack two semiconductor wafers in vacuum so that the periphery of the two semiconductor wafers can be accurately aligned.
It is to provide a jig for manufacturing a semiconductor substrate.

[Means for solving problems]

As shown in FIGS. 1a and 1b, the above-mentioned purpose has an inner circumference slightly larger than the outer circumferences of the semiconductor substrates (4) and (5) placed on the flat plate heater (3) and bonded to each other. A semiconductor wafer guide (1) mainly composed of a ring-shaped body such as quartz and a main body of the semiconductor wafer guide (1)
The slit (11) for inserting the semiconductor wafer inductor (2) made of a rod-shaped body used for the work of sequentially mounting the semiconductor substrates (4) and (5) to be bonded to each other is provided (utility model registration). This is achieved by the device according to claim 1.

Meanwhile, the above bonded SOI semiconductor substrate manufacturing jig is
It is not easy to continuously use the heater 3 without lowering its temperature. This problem is solved by the invention as claimed in claim 2 of the utility model. As shown in FIGS. 1c and 1d, the main body, that is, the semiconductor wafer guide (1) made of the ring-shaped body, After mounting the semiconductor substrates (4) and (5) to be bonded together, a thin bottom plate that can be taken out, for example, a very thin film-shaped bottom plate (12) such as a Teflon-coated metal plate is added. At higher temperatures, a quartz plate or a carbon plate coated with silicon carbide is used as the bottom plate (12).

[Action]

Since a gap of only 0.5 to 1 mm remains between the inner periphery of the semiconductor wafer guide 1 which is the main body of the bonded SOI semiconductor substrate manufacturing jig according to the present invention and the outer periphery of the semiconductor wafers 4 and 5. The maximum stacking error between the semiconductor wafers 4 and 5 is within 0.5 mm, and it is possible to stack the two semiconductor wafers so that the peripheries of the two semiconductor wafers are accurately aligned in a vacuum.

However, when using a wafer with facets,
The guide is also processed so that the guide has a gap of about 0.5 to 1 mm over the entire circumference of the wafer.

〔Example〕

Hereinafter, a jig for manufacturing a bonded SOI semiconductor substrate according to an embodiment of the present invention will be further described with reference to the drawings.

Referring to FIGS. 1a and 1b, reference numeral 1 denotes a semiconductor wafer guide made of a quartz ring-shaped body, the inner circumference of which is made 0.5 to 1 mm smaller than the outer circumferences of the semiconductor wafers 4 and 5 to be superposed. .
That is, between the inner circumference of the semiconductor wafer guide 1 and the outer circumference of the semiconductor wafers 4 and 5 to be superposed, 0.25 to 0.
A gap of 5 mm remains. Reference numeral 2 denotes a semiconductor wafer inductor, which allows the semiconductor wafer 4 to be placed on the flat plate heater 3 without giving an impact to the semiconductor wafers 4 and 5 to be superposed.
Further, it is used to superpose the semiconductor wafer 5 on the semiconductor wafer 4.

In use, the semiconductor wafer guide 1 is placed on the flat-plate heater 3, the semiconductor wafer inductor 2 is inserted through the slit 11, and the semiconductor wafer 4 is kept quiet and as much as possible the semiconductor wafer guide. Place in the center of 1.

Taking care not to move the semiconductor wafer 4, the semiconductor wafer inductor 2 is pulled out and inserted again onto the semiconductor wafer 4 through the slit 11, so that the semiconductor wafer 5 can be kept quiet and as much as possible of the semiconductor. It is placed in the center of the wafer 4, that is, so that the periphery of the semiconductor wafers 4 and 5 are aligned. If there are facets, put them so that they match.

After that, the semiconductor wafer inductor 2 is extracted and the heating / integration process is performed.

Since a gap of only 0.5 to 1 mm remains between the inner circumference of the semiconductor wafer guide 1 and the outer circumference of the semiconductor wafers 4 and 5, the overlay error between the semiconductor wafers 4 and 5 should be within 0.5 mm at maximum. Therefore, even in a vacuum, the periphery of the two semiconductor wafers 4 and 5 can be overlapped with each other almost accurately.

Refer to Fig. 1c and Fig. 1d. To use a single flat plate heater 3 continuously,
The semiconductor wafers 4 and 5 must be superposed on the area other than the single flat plate heater 3 and moved to the flat plate heater 3 in that state.

The second embodiment makes this requirement possible. The semiconductor wafer guide 1 is provided with an extremely thin film-like bottom plate 12 such as a Teflon-coated metal plate. , For example, is supported by the navel 13.

In regions other than the flat plate heater 3, the semiconductor wafers 4 and 5 are superposed so as to be exactly aligned with each other in the same manner as in the first embodiment, and then the flat plate heater 3 is kept in this state. Move up and pull out the bottom plate 12 in the direction of arrow A,
The semiconductor wafers 4 and 5 whose periphery is accurately overlapped are
In that position, it falls to a very small height (for example, about 0.2 mm) that corresponds to the sum of the thickness of the bottom plate 12 and the height of the navel 13, and then falls onto the flat plate heater 3 in that position. To stand still.
After that, the semiconductor wafer guide 1 is removed and heated.
It suffices to shift to the integration step.

[Effect of device]

As explained above, the bonded SOI semiconductor substrate manufacturing jig according to the present invention is placed on a flat plate heater and has an inner circumference slightly larger than the outer circumference of the semiconductor substrates to be bonded, and has a ring shape such as quartz. The main body is a semiconductor wafer guide, and the main body of the semiconductor wafer guide is
A slit for inserting a semiconductor wafer inductor made of a rod-shaped body used for the work of sequentially mounting the semiconductor substrates to be bonded is provided, or the semiconductor substrates to be bonded can be removed after being mounted. A thin bottom plate, for example, an extremely thin film-like bottom plate such as a Teflon-coated metal plate is added to the above-mentioned main body, that is, a semiconductor wafer guide made of a ring-shaped body. Since a gap of only 0.5 to 1 mm remains between the periphery and the outer periphery of the semiconductor wafers 4 and 5,
The maximum registration error between semiconductor wafers 4 and 5 is 0.5 mm.
It is within the above range, and the two semiconductor wafers can be superposed so that the periphery of the two semiconductor wafers are accurately aligned even in a vacuum.

[Brief description of drawings]

1a and 1b are a cross-sectional view and a plan view of a jig for manufacturing a bonded SOI semiconductor substrate according to a first embodiment of the present invention. 1c and 1d are a horizontal sectional view and a plan view of a jig for manufacturing a bonded SOI semiconductor substrate according to a second embodiment of the present invention. 1 ... Semiconductor wafer guide, 11 ... Slit, 12 ... Bottom plate, 13 ... Umbilical, 2 ... Semiconductor wafer inductor, 3 ... Plate heater, 4, 5 ... Semiconductor wafer.

Claims (2)

[Scope of utility model registration request] 1. A semiconductor wafer guide (1) comprising a ring-shaped body having an inner circumference slightly larger than the outer circumferences of semiconductor substrates (4), (5) placed on a flat heater (3) and bonded together. ), And a slit (11) for inserting a semiconductor wafer inductor (2) made of a rod-like body used for sequentially mounting the semiconductor substrates (4) and (5) to be bonded together is provided. A jig for manufacturing a bonded SOI semiconductor substrate, which is characterized in that 2. A semiconductor wafer guide (1) made of the ring-shaped body, the semiconductor substrate (4) to be bonded,
After the (5) is placed, the bottom plate (1
2) A jig for manufacturing a bonded SOI semiconductor substrate according to claim 1, characterized in that the jig is provided.