JPH069015Y2 - Electron gun for vapor deposition - Google Patents
Electron gun for vapor depositionInfo
- Publication number
- JPH069015Y2 JPH069015Y2 JP5890889U JP5890889U JPH069015Y2 JP H069015 Y2 JPH069015 Y2 JP H069015Y2 JP 5890889 U JP5890889 U JP 5890889U JP 5890889 U JP5890889 U JP 5890889U JP H069015 Y2 JPH069015 Y2 JP H069015Y2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- electron gun
- crucible
- heating
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007740 vapor deposition Methods 0.000 title claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 7
- 238000007872 degassing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） この考案は、電子線加熱方式の真空蒸着に使用される蒸
着用電子銃に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to an electron gun for vapor deposition used in electron beam heating type vacuum vapor deposition.
（従来の技術） 従来、蒸着用電子銃は薄膜を形成するべき原材料物質を
収容する為のるつぼに、電子線源および電子線の加速、
偏向機構を備えて構成されていた。前記るつぼは銅のよ
うな熱伝導の良い金属で構成され、水冷ができるように
なっている。(Prior Art) Conventionally, an electron gun for vapor deposition has an electron beam source and an electron beam acceleration, in a crucible for containing a raw material to form a thin film.
It was equipped with a deflection mechanism. The crucible is made of a metal having a good thermal conductivity such as copper and can be water-cooled.
るつぼに収容された原材料物質に加速電子線を照射する
と、原材料物質が加熱されて蒸発するので、るつぼの上
方に半導体基板等の基体を配置することにより、該基体
の表面に原材料物質の薄膜を堆積させ得るようになって
いる。When a raw material substance contained in a crucible is irradiated with an accelerated electron beam, the raw material substance is heated and vaporized. It can be deposited.
（考案が解決しようとする課題） 前記の蒸着用電子銃は、真空装置内に、例えば水冷用配
管で支持されるような構造で配置されるので、真空装置
内に真空にした後、外部から加熱することが難しかっ
た。真空装置の壁面と蒸着用電子銃の間が真空で断熱さ
れ、水冷用配管を介して伝熱される熱量も少い為であ
る。この為、蒸着用電子銃からのガス放出が長時間に亘
り、真空装置の排気上の問題となっていた。(Problems to be Solved by the Invention) Since the vapor deposition electron gun is arranged in a vacuum device in such a structure as to be supported by, for example, a water cooling pipe, after being evacuated in the vacuum device, it is externally applied. It was difficult to heat. This is because the space between the wall surface of the vacuum device and the electron gun for vapor deposition is vacuum-insulated, and the amount of heat transferred through the water cooling pipe is also small. For this reason, the gas emission from the vapor deposition electron gun takes a long time, which is a problem in exhausting the vacuum device.
特に、この蒸着用電子銃を用いて分子線エピタキシー
（ＭＢＥ）を行う場合には、真空装置を超高真空領域ま
で排気する必要があるが、蒸着用電子銃の加熱が困難な
為、蒸着用電子銃に付着した水分子などの放出が長時間
に亘り、超高真空領域までの排気の妨げとなっていた。In particular, when performing molecular beam epitaxy (MBE) using this vapor deposition electron gun, it is necessary to evacuate the vacuum device to an ultra-high vacuum region, but it is difficult to heat the vapor deposition electron gun, so vapor deposition The emission of water molecules attached to the electron gun was obstructed for a long time, and exhaustion to the ultra-high vacuum region was hindered.
又、蒸着を開始した時には、排気の過程ではほとんど加
熱できなかった蒸着用電子銃が急激に加熱されて、付着
していた水分子等が一時に多量に放出される為、これに
よって蒸着用電子銃の周囲の圧力が局部的に上昇して、
電子線源および電子線の加速機構を構成した電極部分で
異常放電が発生して、電極および電源等の機器に損傷を
与える問題点もあった。一方、付着していた水分子等の
不純物は、基板に堆積させる薄膜中へも混入するので、
蒸発分布や蒸発速度に悪影響を与えるのみならず、薄膜
の性質にも悪影響を与える問題点があった。Also, when vapor deposition is started, the vapor deposition electron gun, which could hardly be heated during the exhaust process, is rapidly heated, and a large amount of attached water molecules are released at one time. The pressure around the gun rises locally,
There is also a problem in that abnormal discharge occurs in the electrode portion that constitutes the electron beam source and the electron beam acceleration mechanism, and damages the equipment such as the electrode and the power supply. On the other hand, the attached impurities such as water molecules are mixed in the thin film deposited on the substrate.
There is a problem that not only the evaporation distribution and the evaporation rate are adversely affected, but also the properties of the thin film are adversely affected.
（課題を解決する為の手段） そこでこの考案は、前記の蒸着用電子銃に加熱機構を設
置して、排気の過程で加熱ができるようにしたのであ
る。(Means for Solving the Problem) Therefore, in this invention, a heating mechanism is installed in the vapor deposition electron gun so that heating can be performed in the process of exhausting.
即ちこの考案の蒸着用電子銃は、原材料物質を収容する
為のるつぼに、電子線源および電子線の加速、偏向機構
を備えてなる蒸着用電子銃であって、前記るつぼ本体に
脱ガス加熱の為の加熱機構が設置してあることを特徴と
している。That is, the vapor deposition electron gun of the present invention is a vapor deposition electron gun having an electron beam source and an electron beam accelerating / deflecting mechanism in a crucible for containing a raw material, and the crucible body is heated by degassing. The feature is that the heating mechanism for is installed.
前記加熱機構は、ヒーターによる抵抗加熱の機構又は誘
電体による誘電加熱の機構の一方又は両方で構成されて
いる。又、このような加熱機構はるつぼ本体の外部に付
設したり、内部に埋設して設置されるが、内部および外
部の両方に設置するようにしてもよい。The heating mechanism includes one or both of a resistance heating mechanism using a heater and a dielectric heating mechanism using a dielectric. Further, such a heating mechanism is attached to the outside of the crucible body or is embedded in the inside of the crucible body, but may be installed both inside and outside.
（作用） この考案の蒸着用電子銃によれば、真空装置の排気の過
程で加熱機構を動作させて、蒸着用電子銃の付着した水
分子等を積極的に放出させることができる。この結果、
真空装置の排気を効率良くできると共に、蒸着の開始時
における急激なガス放出を少くすることができる。(Operation) According to the vapor deposition electron gun of the present invention, the heating mechanism can be operated during the evacuation process of the vacuum device to positively release water molecules and the like attached to the vapor deposition electron gun. As a result,
Evacuation of the vacuum device can be efficiently performed, and rapid gas release at the start of vapor deposition can be reduced.
（実施例） 以下、この考案の実施例を図面を参照して説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は誘電加熱による加熱機構を設置した実施例であ
って、１は一側にるつぼ２を形成したるつぼ本体であっ
て、内部に形成した空洞（図示していない）に水冷パイ
プ３、３が連結されて冷却できるようになっている。る
つぼ本体１の両側壁（図中、上下側壁）にはアルミナ
（厚さ１〜２mmの板）などの誘電体４、４を介して鉄製
のヨーク５、５が取付けてあり、るつぼ２の周囲に磁界
を形成して、フィラメント６から発生させた加速電子が
偏向されて、るつぼ２内の原材料物質７に照射できるよ
うになっている。前記ヨーク５、５には高周波電源８が
リード線９、９を介して接続されている。尚、前記水冷
パイプ３、３およびリード線９、９は真空装置壁を通し
て外部に導かれ、高周波電源８が真空装置の外部に設置
されるのは言うまでもない。FIG. 1 is an embodiment in which a heating mechanism by dielectric heating is installed. Reference numeral 1 is a crucible body having a crucible 2 formed on one side, and a water cooling pipe 3 is provided in a cavity (not shown) formed inside. 3 are connected so that they can be cooled. Iron yokes 5 and 5 are attached to both side walls (upper and lower side walls in the figure) of the crucible body 1 via dielectrics 4 and 4 such as alumina (a plate having a thickness of 1 to 2 mm), and the periphery of the crucible 2 is attached. By forming a magnetic field on the substrate, the accelerated electrons generated from the filament 6 are deflected so that the raw material 7 inside the crucible 2 can be irradiated with the deflected electrons. A high frequency power source 8 is connected to the yokes 5 and 5 via lead wires 9 and 9. Needless to say, the water cooling pipes 3 and 3 and the lead wires 9 and 9 are guided to the outside through the wall of the vacuum device, and the high frequency power source 8 is installed outside the vacuum device.
上記の実施例において、高周波電源８の電力をヨーク
５、５を介して誘電体４、４に印加すると、誘電加熱に
より誘電体４，４が発熱する結果、蒸着用電子銃全体を
加熱することができる。然して、真空装置を排気してい
る過程で、上記の加熱操作を行えば、蒸着用電子銃に付
着している水分子等のガス分子を蒸着の前に放出させる
ことができる。In the above embodiment, when the power of the high frequency power source 8 is applied to the dielectrics 4 and 4 via the yokes 5 and 5, the dielectric heating causes the dielectrics 4 and 4 to generate heat, resulting in heating the entire vapor deposition electron gun. You can However, if the above heating operation is performed while the vacuum device is evacuated, gas molecules such as water molecules attached to the vapor deposition electron gun can be released before vapor deposition.
尚、前記ヨーク５、５には永久磁石又は電磁石の磁極を
当接させる関係上、該ヨーク５、５をアース電位から絶
縁することが構造上難しい場合には、前記誘電体４とヨ
ーク５の配置を逆とし、外側に位置した誘電体４（アル
ミナ板の場合、厚さ３〜５mmとする）の外側に別の電極
板を設けて、該電極板を介して高周波電力を印加するよ
うにしても良い。When it is structurally difficult to insulate the yokes 5 and 5 from the ground potential because the magnetic poles of permanent magnets or electromagnets are brought into contact with the yokes 5 and 5, the dielectric 4 and the yoke 5 are The arrangement is reversed and another electrode plate is provided on the outside of the dielectric 4 (thickness of 3 to 5 mm in the case of an alumina plate) located on the outside, and high frequency power is applied through the electrode plate. May be.
次に第２図は、抵抗加熱による加熱機構を設置した実施
例であって、１０がるつぼ本体１の側壁に設置したヒー
ターであって、該ヒーター１０にはリード線９、９を介
して直流電源１１が接続されている。１２は永久磁石で
あって、ヨーク５を介してるつぼ２の周囲に磁界を形成
する為のものである。Next, FIG. 2 shows an embodiment in which a heating mechanism by resistance heating is installed, and 10 is a heater installed on the side wall of the crucible body 1, and the heater 10 is connected to the direct current through lead wires 9 and 9. The power supply 11 is connected. Reference numeral 12 denotes a permanent magnet for forming a magnetic field around the crucible 2 via the yoke 5.
この実施例においても、直流電流１１の電力をヒーター
１０に印加すると該ヒーター１０が発熱する結果、蒸着
用電子銃全体を加熱して、前記実施例と同様、付着した
水分子等のガス分子を事前に放出させることができる。Also in this embodiment, when the electric power of the direct current 11 is applied to the heater 10, the heater 10 generates heat. As a result, the entire electron gun for vapor deposition is heated to remove the gas molecules such as the attached water molecules, as in the above embodiment. It can be released in advance.
尚、ヒーター１０はるつぼ本体１の内部に埋設するよう
にしても良く、又、ヒーター１０を誘電体に代えて、誘
導加熱を行うようにすることも可能である。The heater 10 may be embedded inside the crucible main body 1, or the heater 10 may be replaced with a dielectric material to perform induction heating.
（考案の効果） 以上に説明したようにこの考案によれば、加熱機構を介
して蒸着用電子銃を加熱できるので、排気の過程など事
前に脱ガス操作ができる効果がある。この結果、真空装
置の排気、特に超高真空領域までの排気を容易にできる
と共に、蒸着開始時の急激なガス放出も少くできるの
で、蒸着雰囲気の悪化を無くし、良好な薄膜を蒸着でき
る効果がある。(Effect of the Invention) As described above, according to the present invention, since the vapor deposition electron gun can be heated through the heating mechanism, there is an effect that a degassing operation such as an exhausting process can be performed in advance. As a result, it is possible to easily exhaust the vacuum device, especially to the ultra-high vacuum region, and to reduce the rapid gas release at the start of vapor deposition, so that it is possible to prevent deterioration of the vapor deposition atmosphere and vapor deposit a good thin film. is there.
第１図はこの考案の実施例の概略平面図、第２図はこの
考案の他の実施例の概略縦断面図である。 １……るつぼ本体、２……るつぼ、４……誘電体 ７……原材料物質、１０……ヒーターFIG. 1 is a schematic plan view of an embodiment of the present invention, and FIG. 2 is a schematic vertical sectional view of another embodiment of the present invention. 1 ... crucible main body, 2 ... crucible, 4 ... dielectric 7 ... raw material, 10 ... heater
Claims (1)
線源および電子線の加速、偏向機構を備えてなる蒸着用
電子銃において、前記るつぼ本体に、脱ガス加熱の為の
加熱機構が設置してあることを特徴とした蒸着用電子銃1. A vapor deposition electron gun comprising an electron beam source and an electron beam accelerating / deflecting mechanism in a crucible for accommodating raw material substances, wherein a heating mechanism for degassing heating is provided in the crucible body. An electron gun for vapor deposition characterized by being installed
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5890889U JPH069015Y2 (en) | 1989-05-22 | 1989-05-22 | Electron gun for vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5890889U JPH069015Y2 (en) | 1989-05-22 | 1989-05-22 | Electron gun for vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02149757U JPH02149757U (en) | 1990-12-21 |
| JPH069015Y2 true JPH069015Y2 (en) | 1994-03-09 |
Family
ID=31584942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5890889U Expired - Lifetime JPH069015Y2 (en) | 1989-05-22 | 1989-05-22 | Electron gun for vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH069015Y2 (en) |
-
1989
- 1989-05-22 JP JP5890889U patent/JPH069015Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02149757U (en) | 1990-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |