JPH0734466B2 - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH0734466B2 JPH0734466B2 JP62106586A JP10658687A JPH0734466B2 JP H0734466 B2 JPH0734466 B2 JP H0734466B2 JP 62106586 A JP62106586 A JP 62106586A JP 10658687 A JP10658687 A JP 10658687A JP H0734466 B2 JPH0734466 B2 JP H0734466B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- image sensor
- area
- light
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、複数のセンサを有するイメージセンサに係
り、特に各センサの受光部面積を線間容量に応じて異な
らせることにより感度補正を行うようにしたイメージセ
ンサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor having a plurality of sensors, and in particular, sensitivity correction is performed by varying the light receiving area of each sensor according to the line capacitance. The present invention relates to such an image sensor.
一般に、アモルファスシリコン等のアモルファス半導体
や硫化カドミウム、セレン化カドミウム等の多結晶薄膜
を光導電体層として使用したイメージセンサが、大面積
デバイスとして注目されている。In general, an image sensor using an amorphous semiconductor such as amorphous silicon or a polycrystalline thin film such as cadmium sulfide or cadmium selenide as a photoconductor layer has attracted attention as a large area device.
このようなイメージセンサの中で、容量蓄積形のイメー
ジセンサにおいては、各受光素子のセンサーエリアから
駆動部までの配線容量のばらつきが出力信号のむらとな
って現れるため、高密度化、長尺化が進むにつれて無視
し得ない問題となっている。Among these image sensors, in the capacitive storage type image sensor, the variation in the wiring capacitance from the sensor area of each light receiving element to the drive section causes unevenness in the output signal. Has become a problem that cannot be ignored.
このような従来のイメージセンサのセンサ部の基本構成
は第３図（イ）及び第３図（ロ）（第３図（イ）のａ−
ａ断面図）に示すようになっている。図中、101は基
板、102は下部電極、103は上部電極、104は光導電層、1
05は受光素子、106は透光性保護膜、107は開口窓、108
は遮光膜、Ｄは駆動部である。The basic configuration of the sensor portion of such a conventional image sensor is shown in FIGS. 3 (a) and 3 (b) (a- in FIG. 3 (a)).
(a sectional view). In the figure, 101 is a substrate, 102 is a lower electrode, 103 is an upper electrode, 104 is a photoconductive layer, 1
05 is a light receiving element, 106 is a transparent protective film, 107 is an opening window, 108
Is a light shielding film, and D is a drive unit.
図において、基板101上に一例に配列された多数個の下
部電極102と透光性の上部電極103により光導電層104を
挟んで受光素子105を形成し、この上に透光性保護膜10
6、開口窓107を有する遮光膜で被覆している。この多数
個の受光素子105はそれぞれ等価的には第４図に示すよ
うにフォトダイオード105aとコンデンサ105bとの並列回
路で表される。そして、例えば密着型イメージセンサに
おいては、基板上にこのような受光素子105が原稿を解
読するのに必要な密度で主走査方向に必要な数だけ配列
されており、これらはそれぞれ配線部109を介して駆動
部Ｄに接続されている。駆動部ＤはMOSFET110、電源11
1、シフトレジスタ112から構成され、シフトレジスタ11
2により順次ON−OFFされて電源111と各センサとの間で
順次閉ループが形成され、センサ自体によるコンデンサ
105bと配線部によるコンデンサ109bとに蓄えられる。こ
の電荷は各センサに入射した光により中和されるか、ま
たは残留するが、この後のシフトレジスタの駆動により
これらのコンデンサ105b、109bの再充電が行われると、
各残留電荷に応じた電流が流れてビット毎に出力され
る。こうしてこの動作が１ライン毎に繰り返されて原稿
の読み取りが行われる。In the figure, a light receiving element 105 is formed on a substrate 101 by sandwiching a photoconductive layer 104 with a large number of lower electrodes 102 and a transparent upper electrode 103 arranged in an example, and a transparent protective film 10 is formed on the light receiving element 105.
6. Covered with a light shielding film having an opening window 107. Each of the plurality of light receiving elements 105 is equivalently represented by a parallel circuit of a photodiode 105a and a capacitor 105b as shown in FIG. In a contact image sensor, for example, such light receiving elements 105 are arranged on the substrate in a required number in the main scanning direction at a density necessary for decoding the original, and these are arranged in the wiring portion 109. It is connected to the drive unit D via. The drive unit D is a MOSFET 110, a power supply 11
1, shift register 112, shift register 11
It is turned on and off in sequence by 2 to form a closed loop between the power supply 111 and each sensor, and the capacitor by the sensor itself
It is stored in 105b and the capacitor 109b by the wiring part. This charge is neutralized by the light incident on each sensor or remains, but when the capacitors 105b and 109b are recharged by driving the shift register thereafter,
A current corresponding to each residual charge flows and is output for each bit. In this way, this operation is repeated for each line to read the document.
ところで、配線部は通常駆動部Ｄと各センサを接続する
ように、センサ部と同一の基板上に形成されるが、シフ
トレジスタ、或いはMOSFETとのワイヤボンディング等に
よる接続上の問題から各センサによって長さに差を生じ
てしまい、配線部によって形成されているコンデンサ10
9bの容量にもばらつきを生じることとなる。By the way, the wiring part is usually formed on the same substrate as the sensor part so as to connect the driving part D and each sensor, but it is different from each sensor due to connection problems due to wire bonding with a shift register or MOSFET. Capacitor 10 is formed by the wiring part because of the difference in length.
The 9b capacity will also vary.
このような配線容量の影響を補正する従来のイメージセ
ンサの例を第５図により説明する。An example of a conventional image sensor that corrects the influence of such wiring capacitance will be described with reference to FIG.
第５図（イ）は従来のイメージセンサの要部平面図、第
５図（ロ）は第５図（イ）のＡ−Ａ断面図である。図
中、１はセンサ基板、２は下部電極（Cr）、３はアモル
ファスシリコン（ａ−Si）、４は上部透明電極（IT
O）、５は遮光膜（Cr）、６はセンサ受光部、７、８は
電極、９、10は容量補正部である。FIG. 5 (A) is a plan view of a main part of a conventional image sensor, and FIG. 5 (B) is a sectional view taken along the line AA of FIG. 5 (A). In the figure, 1 is a sensor substrate, 2 is a lower electrode (Cr), 3 is amorphous silicon (a-Si), 4 is an upper transparent electrode (IT).
O), 5 is a light shielding film (Cr), 6 is a sensor light receiving portion, 7 and 8 are electrodes, and 9 and 10 are capacitance correcting portions.
このようなイメージセンサーにおいて、受光素子自体の
もつ静電容量が配線等の付属回路による静電容量に比べ
て充分大きくなるように、各受光素子の下部電極と上部
電極との重なり合う部分の面積を大きくすると共に、所
定の大きさの開口窓を有する遮光膜５と電極２とからな
る光の影響を受けないセンサ部の容量を、電極２の非受
光センサ部幅W1と非受光センサ部幅W2とを変えて補正用
面積S1、S2を変えることにより調節し、線間容量のバラ
ツキをキャンセルして補正している。In such an image sensor, the area of the overlapping portion of the lower electrode and the upper electrode of each light receiving element should be set so that the capacitance of the light receiving element itself is sufficiently larger than the capacitance of the attached circuit such as wiring. with increasing, predetermined size of the light shielding film 5 and the capacitance of the sensor unit is not affected by light consisting of the electrodes 2 which includes a non-light-receiving sensor section width W 1 of the electrode 2 non-light-receiving sensor section width having an opening window Adjustment is performed by changing W 2 and the correction areas S 1 and S 2 to cancel the variation in the line capacitance and perform the correction.
しかしながら、このような従来のイメージセンサにおい
ては、高密度化した場合、充分に線幅の可変域を取れな
かったり、遮光部を必要とするために、製造プロセスが
増えるなどの欠点があった。However, in such a conventional image sensor, when the density is increased, there are drawbacks such that the variable range of the line width cannot be sufficiently obtained and the light-shielding portion is required, so that the number of manufacturing processes increases.
本発明は上記問題点を解決するためのもので、線間幅や
センサエリアを変えることなく感度補正可能であり、製
造プロセスの変更を要しない高密度イメージセンサに適
用可能なイメージセンサを提供することを目的とする。The present invention is intended to solve the above problems, and provides an image sensor that can perform sensitivity correction without changing the line width or the sensor area and can be applied to a high-density image sensor that does not require a change in the manufacturing process. The purpose is to
そのために本発明のイメージセンサは、受光部を有する
複数のセンサを配列したイメージセンサにおいて、各セ
ンサの受光部内に非センサ部を形成し、線間容量に応じ
て前記非センサ部の面積を変えることにより、各センサ
の実質の受光部面積を異ならせたことを特徴とする。Therefore, in the image sensor of the present invention, in the image sensor in which a plurality of sensors having light receiving portions are arranged, a non-sensor portion is formed in the light receiving portion of each sensor, and the area of the non-sensor portion is changed according to the line capacitance. Thus, the actual light receiving area of each sensor is made different.
本発明のイメージセンサは、センサの受光部内に非セン
サ部を形成し、この非センサ部の面積を線間容量のバラ
ツキに応じて変えることにより、配線、遮光膜間の距
離、拡散層の幅等には一切手を加えず、センサエリアを
変えずに感度補正することが可能となる。In the image sensor of the present invention, the non-sensor portion is formed in the light-receiving portion of the sensor, and the area of the non-sensor portion is changed according to the variation in the line capacitance, so that the distance between the wiring, the light-shielding film, and the width of the diffusion layer is changed. It is possible to perform sensitivity correction without changing the sensor area and the like without changing the sensor area.
以下、実施例を図面を参照して説明する。 Hereinafter, embodiments will be described with reference to the drawings.
第１図は本発明のイメージセンサの一実施例を示す図
で、同図（イ）はセンサ部を示す図、同図（ロ）は断面
図であり、第５図と同一番号は同一内容を示している。
図中、11は非センサ部、12は第１のセンサ、13は第２の
センサ、14、15はセンサ上の非センサ部である。FIG. 1 is a diagram showing an embodiment of an image sensor of the present invention, FIG. 1 (a) is a diagram showing a sensor portion, FIG. 1 (b) is a sectional view, and the same numbers as in FIG. Is shown.
In the figure, 11 is a non-sensor part, 12 is a first sensor, 13 is a second sensor, and 14 and 15 are non-sensor parts on the sensor.
図において、センサ受光部には非センサ部11が設けられ
ており、例えば第１のセンサ12の非センサ部14は、面積
S3の三角形にし、第２のセンサ13の非センサ部15は、面
積S4の正方形にしてあり、センサとICとの間の長さの違
いにより生じる容量のばらつきに応じた面積のものを形
成する。In the figure, the sensor light receiving portion is provided with a non-sensor portion 11. For example, the non-sensor portion 14 of the first sensor 12 has an area
The triangular shape of S 3 is used, and the non-sensor part 15 of the second sensor 13 has a square shape of area S 4 , and has an area corresponding to the variation in capacitance caused by the difference in length between the sensor and the IC. Form.
第２図はイメージセンサ内の任意の２つのセンサ部の等
価回路を示す図、CS1、CS2は第１、第２のセンサ自体の
容量、CL1、CL2、CL3は線間容量、ClはIC−GND間容量、
16、17は増幅器、18、19、20、21はスイッチである。FIG. 2 is a diagram showing an equivalent circuit of any two sensor parts in the image sensor. C S1 , C S2 are the capacitances of the first and second sensors themselves, and C L1 , C L2 , C L3 are line capacitances. , Cl is the capacitance between IC and GND,
Reference numerals 16 and 17 are amplifiers, and 18, 19, 20, and 21 are switches.
図において、センサー１、２の出力電圧V1、V2はセンサ
単位面積当たりに発生する電荷量がｑ、補正前の受光部
面積がＳ、Ｋがａ−Siの誘電率εをａ−Siの膜厚ｄで割
った値（Ｋ＝ε/d）、第１、第２のセンサ12、13につい
ての線間容量をC1L、C2Lとすると、 となり、出力電圧は非センサー部面積S3、S4によってコ
ントロールできることが分かる。そこで、補正前の線間
容量のバラツキによる最も低い出力レベルVminとなるよ
うに、S3、S4を選べば出力は均一となる。なおS3、S4は
センサ最上部層電極ITO、または下部電極Cr層をエッチ
ングすることで容易にでき、また中央層ａ−Siを同時に
エッチングしても同様な効果が得られる。In the figure, the output voltages V 1 and V 2 of the sensors 1 and 2 are q the amount of charge generated per unit area of the sensor, S is the area of the light receiving portion before correction, and K is the dielectric constant ε of a-Si and a-Si. Value (K = ε / d) divided by the film thickness d of, and the line capacitances of the first and second sensors 12 and 13 are C1 L and C2 L , It can be seen that the output voltage can be controlled by the non-sensor area S 3 , S 4 . Therefore, if S 3 and S 4 are selected so that the output level Vmin becomes the lowest due to the variation in the line capacitance before correction, the output becomes uniform. Note that S 3 and S 4 can be easily formed by etching the sensor uppermost layer electrode ITO or the lower electrode Cr layer, and the same effect can be obtained by simultaneously etching the central layer a-Si.
以上のように本発明によれば、線間幅やセンサエリアを
変えることなくイメージセンサの感度補正が可能とな
り、製造プロセスの変更も全く必要としない。また、セ
ンサエリアを変えた場合には、遮光膜等により受光部の
面積を規定する必要があり、プロセスが増えて複雑とな
るが、本発明はセンサエリアを変える必要がないため、
製造プロセスが増えることがはない。また、センサ部に
非センサ部を形成することから、ゴミ、異物によるセン
サへの影響を減少させることもできる。As described above, according to the present invention, the sensitivity of the image sensor can be corrected without changing the line width or the sensor area, and the manufacturing process need not be changed at all. Further, when the sensor area is changed, it is necessary to define the area of the light receiving portion by a light shielding film or the like, and the number of processes is complicated, but the present invention does not need to change the sensor area.
There is no increase in the manufacturing process. Further, since the non-sensor portion is formed in the sensor portion, it is possible to reduce the influence of dust and foreign matter on the sensor.
第１図は本発明のイメージセンサの一実施例を示す図
で、同図（イ）はセンサ部を示す図、同図（ロ）は断面
図、第２図は第１図のイメージセンサの等価回路を示す
図、第３図はイメージセンサのセンサ部の基本構成を示
す図、第４図は第３図の構成のイメージセンサの等価回
路を示す図、第５図（イ）は従来のイメージセンサの要
部平面図、第５図（ロ）は断面図である。 １…センサ基板、２…下部電極、３はアモルファスシリ
コン（ａ−Si）、４…上部透明電極（ITO）、５…遮光
膜（Cr）、６…センサ受光部、11…非センサ部、12…第
１のセンサ、13…第２のセンサ、14、15…センサ上の非
センサ部。FIG. 1 is a diagram showing an embodiment of the image sensor of the present invention. FIG. 1A is a diagram showing a sensor portion, FIG. 1B is a sectional view, and FIG. 2 is a diagram showing the image sensor of FIG. FIG. 3 is a diagram showing an equivalent circuit, FIG. 3 is a diagram showing a basic configuration of a sensor portion of the image sensor, FIG. 4 is a diagram showing an equivalent circuit of the image sensor having the configuration shown in FIG. 3, and FIG. FIG. 5 (B) is a cross-sectional view of the main part of the image sensor. DESCRIPTION OF SYMBOLS 1 ... Sensor substrate, 2 ... Lower electrode, 3 is amorphous silicon (a-Si), 4 ... Upper transparent electrode (ITO), 5 ... Light-shielding film (Cr), 6 ... Sensor light-receiving part, 11 ... Non-sensor part, 12 ... 1st sensor, 13 ... 2nd sensor, 14, 15 ... Non-sensor part on a sensor.
Claims (1)
メージセンサにおいて、各センサの受光部内にセンサを
構成する上下電極の少なくとも一方を部分的に除去した
非センサ部を形成し、各受光部からの配線の有する静電
容量に応じて前記非センサ部の面積を変えることによ
り、各センサの実質のセンサ部面積を異ならせて出力を
均一化するようにしたことを特徴とするイメージセン
サ。1. An image sensor in which a plurality of sensors each having a light-receiving portion are arranged, and a non-sensor portion is formed by partially removing at least one of upper and lower electrodes constituting the sensor in the light-receiving portion of each sensor. The image sensor is characterized in that the area of the non-sensor portion is changed in accordance with the electrostatic capacity of the wiring from the sensor to make the actual sensor area of each sensor different so as to make the output uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62106586A JPH0734466B2 (en) | 1987-04-30 | 1987-04-30 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62106586A JPH0734466B2 (en) | 1987-04-30 | 1987-04-30 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63272071A JPS63272071A (en) | 1988-11-09 |
| JPH0734466B2 true JPH0734466B2 (en) | 1995-04-12 |
Family
ID=14437302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62106586A Expired - Fee Related JPH0734466B2 (en) | 1987-04-30 | 1987-04-30 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734466B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4635191B2 (en) * | 2003-10-21 | 2011-02-16 | 国立大学法人静岡大学 | Super-resolution pixel electrode arrangement structure and signal processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5552278A (en) * | 1978-10-13 | 1980-04-16 | Fujitsu Ltd | Solid image pickup device |
| JPS5969964A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Solid-state image pick-up device |
| JPS61253859A (en) * | 1985-05-02 | 1986-11-11 | Hitachi Ltd | image sensor |
-
1987
- 1987-04-30 JP JP62106586A patent/JPH0734466B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63272071A (en) | 1988-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |