JPH0793272B2 - Plasma CVD method and apparatus - Google Patents
Plasma CVD method and apparatusInfo
- Publication number
- JPH0793272B2 JPH0793272B2 JP32737091A JP32737091A JPH0793272B2 JP H0793272 B2 JPH0793272 B2 JP H0793272B2 JP 32737091 A JP32737091 A JP 32737091A JP 32737091 A JP32737091 A JP 32737091A JP H0793272 B2 JPH0793272 B2 JP H0793272B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- pulse modulation
- radicals
- modulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 36
- 150000003254 radicals Chemical class 0.000 description 34
- 238000005755 formation reaction Methods 0.000 description 21
- 239000000428 dust Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- -1 SiH radicals Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【産業上の利用分野】本発明は、原料ガスをプラズマ化
し、このプラズマに基板を曝して該基板上に薄膜を形成
するプラズマＣＶＤ法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD method and apparatus for converting a source gas into plasma and exposing the substrate to the plasma to form a thin film on the substrate.
【従来の技術】プラズマＣＶＤ法及び装置はアモルファ
スシリコン（ａ−Ｓｉ）太陽電池、液晶表示装置等の各
種薄膜デバイスの形成に広く使用されている。このプラ
ズマＣＶＤでは、成膜する基板上にダストが付着するこ
とを防止するため、プラズマＣＶＤ装置の成膜室への基
板搬送系の配置や成膜室における基板の配置を、ダスト
やパーティクル（以下「ダスト」という。）の発生が少
なくなるように工夫している。また、ダスト発生を抑制
するため、成膜条件を工夫したり、成膜室への基板の設
置時や装置の運転の合間に成膜室内電極や基板搬送系等
を清掃することも行われており、これらによって例えば
液晶表示基板上の成膜ではかなりの効果があがってい
る。2. Description of the Related Art Plasma CVD methods and devices are widely used for forming various thin film devices such as amorphous silicon (a-Si) solar cells and liquid crystal display devices. In this plasma CVD, in order to prevent dust from adhering to the substrate on which the film is to be formed, the arrangement of the substrate transport system to the film forming chamber of the plasma CVD apparatus and the position of the substrate in the film forming chamber are set to dust and particles (hereinafter It is designed to reduce the generation of "dust". In addition, in order to suppress dust generation, the film forming conditions are devised and the electrodes in the film forming chamber and the substrate transfer system are cleaned during the installation of the substrate in the film forming chamber and the operation of the apparatus. However, these have significantly improved the effect of film formation on a liquid crystal display substrate, for example.
【発明が解決しようとする課題】しかしながら、プラズ
マＣＶＤにより、例えば原料ガスにＳｉＨ4 を使ってガ
ラス等の基板上に（ａ−Ｓｉ）膜を形成すると、たとえ
前述の如く、ダスト発生の少ない条件を設定しても、該
成膜中に基板にダストが付着する。これは、本発明者の
研究によると、たとえ、ダスト発生の少ない条件で成膜
しても、その成膜中に、なお、基板に近いプラズマ空間
領域にダストが蓄積されるからである。前記原料ガスＳ
ｉＨ4 を例にとると、これがプラズマ化されることによ
りＳｉＨ3 ラジカル、ＳｉＨ2 ラジカル、ＳｉＨラジカ
ルが生成されるが、（ａ−Ｓｉ）膜の形成には主として
ＳｉＨ3 ラジカルが寄与し、ＳｉＨ2 ラジカルやＳｉＨ
ラジカルといった低シラン系ラジカルはＳｉＨ4 と反応
して高次シランＳｉｘＨｙが生成され、これがダストに
なると考えられる。そこで本発明は、原料ガスをプラズ
マ化し、このプラズマに基板を曝して該基板上に薄膜を
形成するプラズマＣＶＤ法及び装置において、成膜反応
に寄与するラジカル種の生成を妨げず、しかもダスト発
生の原因となるラジカル種の発生を選択的に抑制して、
ダストの基板上成膜部への付着、混入を抑制し、成膜速
度を向上させることを目的とする。However, when an (a-Si) film is formed on a substrate such as glass by plasma CVD using, for example, SiH 4 as a raw material gas, as described above, dust generation is reduced. Even if is set, dust adheres to the substrate during the film formation. This is because, according to the research by the present inventor, even if the film is formed under the condition that the generation of dust is small, the dust is still accumulated in the plasma space region close to the substrate during the film formation. The raw material gas S
Taking iH 4 as an example, when it is turned into plasma, SiH 3 radicals, SiH 2 radicals, and SiH radicals are generated, but the SiH 3 radicals mainly contribute to the formation of the (a-Si) film, and 2 radicals and SiH
It is considered that low silane-based radicals such as radicals react with SiH 4 to generate higher-order silane SixHy, which becomes dust. Therefore, the present invention is a plasma CVD method and apparatus in which a raw material gas is made into plasma and a substrate is exposed to this plasma to form a thin film on the substrate, and the generation of radical species that contribute to the film formation reaction is not hindered, and dust generation occurs. By selectively suppressing the generation of radical species that cause
It is an object of the present invention to prevent dust from adhering to and mixing with a film forming portion on a substrate and to improve a film forming rate.
【課題を解決するための手段】プラズマＣＶＤの反応過
程を支配するプラズマ中には、前述のとおり多くのラジ
カルが存在し、イオンが存在する。プラズマ中における
エネルギー交換の主役は電子であり、電界により加速さ
れた電子が、イオンや中性粒子と衝突を繰り返し、多種
多様のイオン、ラジカルが生成される。従って、プラズ
マＣＶＤ法及び装置においては、イオン、ラジカルの制
御は電子（エネルギー）の制御により行うことができ、
これを制御することで、生成される各種ラジカルのう
ち、成膜反応に不必要なラジカルの発生をできるだけ抑
制し、成膜反応に必要なラジカルをできるだけ増加させ
得るプラズマ条件があると考えられる。本発明者は、先
ず、次の点に着目した。すなわち、例えば原料ガスがＳ
ｉＨ4 の場合、成膜反応に利用すべきＳｉＨ3 ラジカル
は、プラズマ発生のための高周波入力オンにより、ダス
ト発生の原因となるＳｉＨ2 ラジカルやＳｉＨラジカル
とともに増加するが、高周波入力オフ後、ＳｉＨ3 ラジ
カルは寿命が比較的長いのに対し、ＳｉＨ2 ラジカルや
ＳｉＨラジカルは寿命が短く、従って、高周波（ＲＦ）
入力にｍｓｅｃオーダのパルス変調によるオン−オフ時
間を設ければ、ＳｉＨ3 以外の、ダスト生成に関与する
各種ラジカルを選択的に消滅させ得ることに着目した。
この上で、本発明者はさらに研究を重ね、プラズマ中に
おける電子温度が各種イオン、ラジカルの生成に関係
し、プラズマ中における電子温度は生成される各種ラジ
カル密度の空間分布と電界強度、特に、電界強度の時間
変化（ｄＥ／ｄｔ）により決定され、この傾きを制御す
ることによって、実効平均電子温度の制御、換言すれば
ラジカル生成の制御が可能となること、そして前記電界
強度の時間変化の制御として高周波波形に対し高調波を
重畳し、さらにμｓｅｃオーダの変調を加えれば、図４
に示すように、平均電子温度を制御できることに着目し
た。以上のことから、前述のごとき２種類のパルス変調
を加えるとともに高調波を重畳すれば、ダスト生成に関
与する不必要で寿命の短いラジカルを選択的に抑制する
ことが可能となると同時に、良質膜形成のキーパラメー
タとなるラジカル種の生成を促進させることが可能とな
ると考えられ、本発明完成に至った。すなわち、本発明
は、前記目的を達成するため、原料ガスをプラズマ化
し、このプラズマに基板を曝して該基板上に薄膜を形成
するプラズマＣＶＤ法において、前記原料ガスのプラズ
マ化を、１ＫＨｚ以下の第１のパルス変調及び該変調よ
り短い周期をもつ第２のパルス変調を重畳するとともに
前記パルス変調を行う高周波波形に対し高調波を重畳し
た高周波電力の印加により行うことを特徴とするプラズ
マＣＶＤ法、及び原料ガスをプラズマ化し、このプラズ
マに基板を曝して該基板上に薄膜を形成するプラズマＣ
ＶＤ装置において、前記原料ガスのプラズマ化のための
高周波電力印加手段が、１ＫＨｚ以下の第１のパルス変
調及び該変調より短い周期をもつ第２のパルス変調を重
畳するとともに前記パルス変調を行う高周波波形に対し
高調波を重畳した高周波電力を印加するものであること
を特徴とするプラズマＣＶＤ装置を提供するものであ
る。高調波を重畳した二重変調の条件は、原料ガス流
量、成膜室真空度、基板温度、原料ガス種等の多くのパ
ラメーターにより、随時変化させる必要があるが、電子
温度が最適となる条件で形成した膜は、良好な物理的特
定（バンドギャップ、キャリア移動度等）を有する。一
般的には、前記第１のパルス変調は１ＫＨｚ以下の条件
とすることが考えられる。周期が１ＫＨｚより短いと、
不必要なラジカル種の減少を促進し難い。一方、必要な
ラジカル種をあまり減少させないためには例えば４００
Ｈｚ以上とすることが考えられる。また、必要なラジカ
ル種を選択的に増加させ、不必要なラジカル種の発生、
残存を選択的に抑制するうえで、前記第２のパルス変調
におけるオンタイムｔ１を０．５μｓｅｃ＜ｔ１＜１０
０μｓｅｃの範囲で、オフタイムｔ２を３μｓｅｃ＜ｔ
２＜１００μｓｅｃの範囲で選択決定することが代表的
な例として考えられる。また、重畳する高調波として
は、基の高周波周波数に対し、２倍、３倍・・・の周波
数を有するもので、高調波重畳波が、 Ａｓｉｎωｔ＋Ｂｓｉｎ２ωｔ＋Ｃｓｉｎ３ωｔ （ ０≦Ｂ／Ａ≦０．４ ０≦Ｃ／Ａ≦０．３ ）と
なるものが考えられる。As described above, many radicals exist and ions exist in the plasma that governs the reaction process of plasma CVD. Electrons play a major role in energy exchange in plasma, and electrons accelerated by an electric field repeatedly collide with ions and neutral particles to generate various kinds of ions and radicals. Therefore, in the plasma CVD method and apparatus, control of ions and radicals can be performed by control of electrons (energy),
By controlling this, it is considered that there is a plasma condition that can suppress the generation of radicals unnecessary for the film formation reaction as much as possible among the various radicals generated and increase the radicals necessary for the film formation reaction as much as possible. The present inventor first focused on the following points. That is, for example, if the source gas is S
In the case of iH 4, the SiH 3 radicals to be used for the film formation reaction increase together with the SiH 2 radicals and SiH radicals that cause dust generation when the high frequency input for plasma generation is turned on. 3 radicals have a relatively long life, whereas SiH 2 radicals and SiH radicals have a short life, and therefore high frequency (RF)
It was noted that various radicals other than SiH 3 that are involved in dust generation can be selectively extinguished by providing an input with an on-off time by pulse modulation of the order of msec.
On this basis, the present inventor further researches, the electron temperature in the plasma is related to the generation of various ions and radicals, and the electron temperature in the plasma is the spatial distribution of various radical density generated and the electric field strength, in particular, It is determined by the time change (dE / dt) of the electric field strength, and by controlling this slope, it becomes possible to control the effective average electron temperature, in other words, the radical generation, and As a control, if harmonics are superimposed on the high-frequency waveform and modulation in the order of μsec is applied,
As shown in, we paid attention to the fact that the average electron temperature can be controlled. From the above, it is possible to selectively suppress unnecessary and short-lived radicals involved in dust generation by applying two types of pulse modulation and superimposing harmonics as described above, and at the same time, improve the quality of the film. It is thought that it is possible to promote the generation of radical species that are a key parameter for formation, and the present invention has been completed. That is, in the present invention, in order to achieve the above object, in a plasma CVD method in which a source gas is turned into plasma and a substrate is exposed to this plasma to form a thin film on the substrate, the source gas is turned into a plasma of 1 KHz or less. The plasma CVD method is characterized in that the first pulse modulation and the second pulse modulation having a shorter cycle than the modulation are superposed, and the high frequency waveform for performing the pulse modulation is applied by applying high frequency power in which harmonics are superposed. , And plasma C for forming a thin film on the substrate by exposing the substrate to this plasma
In the VD device, the high frequency power applying means for converting the source gas into plasma superimposes the first pulse modulation of 1 KHz or less and the second pulse modulation having a shorter period than the modulation, and performs the pulse modulation. The present invention provides a plasma CVD apparatus characterized by applying high-frequency power in which a harmonic is superimposed on a waveform. The condition of double modulation with superposition of harmonics needs to be changed at any time depending on many parameters such as the flow rate of the raw material gas, the degree of vacuum in the film forming chamber, the substrate temperature, the kind of the raw material gas, etc. The film formed in 2) has good physical characteristics (band gap, carrier mobility, etc.). Generally, it is considered that the first pulse modulation is performed under the condition of 1 KHz or less. If the cycle is shorter than 1 KHz,
It is difficult to promote the reduction of unnecessary radical species. On the other hand, in order not to reduce the necessary radical species so much, for example, 400
It is considered that the frequency is set to Hz or higher. In addition, the necessary radical species are selectively increased to generate unnecessary radical species,
In order to selectively suppress the remaining, the on-time t1 in the second pulse modulation is 0.5 μsec <t1 <10.
The off time t2 is 3 μsec <t within the range of 0 μsec.
A typical example is to select and determine in the range of 2 <100 μsec. Further, the harmonics to be superposed have a frequency which is twice or triple the frequency of the original high frequency, and the harmonic superposed wave is: Asin ωt + Bsin2ωt + Csin3ωt (0 ≦ B / A ≦ 0.4 0 ≦ C / A ≦ 0.3) is considered.
【作用】本発明のプラズマＣＶＤ法及び装置によると、
１ＫＨｚ以下の第１のパルス変調及び該変調より短い周
期をもつ第２のパルス変調を重畳するとともに該パルス
変調を行う高周波波形に対し高調波を重畳した高周波電
力が原料ガスに印加されることで、成膜反応に必要なラ
ジカル種が選択的に発生、増加する一方、成膜反応に不
必要なラジカル種の発生が抑制された状態で、基板上に
所望の薄膜が形成される。成膜中、成膜反応に不必要な
ラジカル種の発生が抑制されることでダストの発生率は
著しく低下し、且つ、成膜反応に必要なラジカル種は選
択的に発生、増加することで所望の成膜速度が得られ
る。According to the plasma CVD method and apparatus of the present invention,
By applying the first pulse modulation of 1 KHz or less and the second pulse modulation having a shorter period than the modulation, and applying the high frequency power in which the harmonic is superimposed on the high frequency waveform for performing the pulse modulation to the source gas. The desired thin film is formed on the substrate while the radical species required for the film formation reaction are selectively generated and increased, while the generation of the radical species unnecessary for the film formation reaction is suppressed. By suppressing the generation of radical species unnecessary for the film formation reaction during film formation, the dust generation rate is significantly reduced, and the radical species necessary for the film formation reaction is selectively generated and increased. A desired film formation rate can be obtained.
成膜速度 ：約２５ｎｍ／ｍｉｎ パーティクル密度：３０個／１００ｍｍ角（粒径０．３
μｍ以上） 光学的バンドギャップ：１．８〜１．９ｅＶ ｂ）ａ−ＳｉＮｘ成膜 ＳｉＨ4 流量 ：５０ｓｃｃｍ ＮＨ3 流量 ：１５０ｓｃｃｍ 成膜ガス圧 ：１×１０-1Ｔｏｒｒ 基板温度 ：３５０℃ 高周波出力 ：５００Ｗ 〔結果〕 成膜速度 ：約５０ｎｍ／ｍｉｎ パーティクル密度：３０個／１００ｍｍ角（粒径０．３
μｍ以上） 光学的バンドギャップ：４．８〜５．０ｅＶ なお、本発明は前記実施例に限定されるものではなく、
他にも種々の態様で実施できる。例えば、高周波電源４
は、図３に示すように構成してもよく、或いは、さらに
他の構成としてもよい。図３に示すもの４０は、高調波
発生手段と波形生成手段を含む高周波信号発生器４３か
らの第１パルス変調された高周波出力を、アナログスイ
ッチＡＳ、ＲＦパワーアンプ４４及びマッチングボック
ス４５を介して供給するように構成する一方、アナログ
スイッチＡＳを、位相同期回路４６にてパルス信号の同
期をとりつつパルス信号発生器４７にて操作することで
第２パルス変調を行うようにしたものである。Deposition rate: about 25 nm / min Particle density: 30 particles / 100 mm square (particle size 0.3
Optical band gap: 1.8 to 1.9 eV b) a-SiNx film formation SiH 4 flow rate: 50 sccm NH 3 flow rate: 150 sccm Film formation gas pressure: 1 × 10 −1 Torr Substrate temperature: 350 ° C. High frequency output : 500 W [Result] Deposition rate: Approximately 50 nm / min Particle density: 30 particles / 100 mm square (particle size 0.3
Optical bandgap: 4.8 to 5.0 eV The present invention is not limited to the above-mentioned examples,
Besides, it can be implemented in various modes. For example, high frequency power source 4
May be configured as shown in FIG. 3 or may have another configuration. The one 40 shown in FIG. 3 receives the first pulse-modulated high frequency output from the high frequency signal generator 43 including the harmonic generation means and the waveform generation means via the analog switch AS, the RF power amplifier 44 and the matching box 45. While the analog switch AS is supplied, the second pulse modulation is performed by operating the analog signal AS with the pulse signal generator 47 while synchronizing the pulse signal with the phase synchronization circuit 46.
【発明の効果】以上説明したように本発明プラズマＣＶ
Ｄ法及び装置には次のような利点がある。 成膜反応に寄与するラジカル種の生成を妨げず、し
かもダスト発生の原因となるラジカル種の発生を選択的
に抑制して、ダストの基板上成膜部への付着、混入を抑
制し、良質の膜を形成でき、また、成膜速度を向上させ
ることができる。 ガス流量や、原料ガスプラズマ化のための投入パワ
ーを増加させても、ダストの発生率の増加を引き起こさ
ないので、それだけ成膜速度を向上させることができ
る。 装置の大幅な改造を必要としないため、装置コス
ト、成膜コストが安価に抑制される。 ダストの発生が抑制されるため、装置のメインテナ
ンス性の向上が得られる。As described above, the plasma CV of the present invention
The D method and apparatus have the following advantages. It does not hinder the generation of radical species that contribute to the film formation reaction, and also selectively suppresses the generation of radical species that cause dust generation, and prevents dust from adhering to and mixing with the film formation portion on the substrate. Film can be formed and the film formation rate can be improved. Even if the gas flow rate or the input power for plasma conversion to the source gas is increased, the dust generation rate does not increase, so that the film formation rate can be improved accordingly. Since no major remodeling of the device is required, the device cost and the film forming cost can be suppressed at low cost. Since the generation of dust is suppressed, the maintainability of the device can be improved.
【図１】本発明に係る方法の実施に使用するプラズマＣ
ＶＤ装置の一例の概略断面図である。1 is a plasma C used for carrying out the method according to the invention, FIG.
It is a schematic sectional drawing of an example of a VD apparatus.
【図２】高周波電力のパルス変調の様子を示す図であ
る。FIG. 2 is a diagram showing a state of pulse modulation of high frequency power.
【図３】高周波電源の他の例のブロック回路図である。FIG. 3 is a block circuit diagram of another example of a high frequency power supply.
【図４】高周波入力オン後の電子温度の時間的変化を高
調波重畳の場合と、そうでない場合を比較して示すグラ
フである。FIG. 4 is a graph showing a temporal change in electron temperature after turning on a high-frequency input, in a case where harmonics are superimposed and a case where no harmonics are superimposed.
１ 成膜室 ２ カソード電極 ３ 接地電極 ４ 高周波電源 ４１ 高周波信号発生器 ４２ ＲＦパワーアンプ ５ ヒータ ６ 排気系 ７ 原料ガス供給装置 ８ マッチングボックス ４０ 高周波電源 ４３ 高周波信号発生器 ４４ ＲＦパワーアンプ ４５ マッチングボックス ４６ 位相同期回路 ４７ パルス信号発生器 ＡＳ アナログスイッチ 1 Film forming chamber 2 Cathode electrode 3 Ground electrode 4 High frequency power supply 41 High frequency signal generator 42 RF power amplifier 5 Heater 6 Exhaust system 7 Raw material gas supply device 8 Matching box 40 High frequency power supply 43 High frequency signal generator 44 RF power amplifier 45 Matching box 46 Phase synchronization circuit 47 Pulse signal generator AS Analog switch
Claims (3)
に基板を曝して該基板上に薄膜を形成するプラズマＣＶ
Ｄ法において、前記原料ガスのプラズマ化を、１ＫＨｚ
以下の第１のパルス変調及び該変調より短い周期をもつ
第２のパルス変調を重畳するとともに前記パルス変調を
行う高周波波形に対し高調波を重畳した高周波電力の印
加により行うことを特徴とするプラズマＣＶＤ法。1. A plasma CV for converting a source gas into plasma and exposing a substrate to the plasma to form a thin film on the substrate.
In the D method, plasma conversion of the raw material gas is performed at 1 KHz.
Plasma characterized by superimposing the following first pulse modulation and second pulse modulation having a shorter period than the modulation, and applying high-frequency power in which harmonics are superimposed on the high-frequency waveform for performing the pulse modulation. CVD method.
ムｔ１が０．５μｓｅｃ＜ｔ１＜１００μｓｅｃの範囲
にあり、オフタイムｔ２が３μｓｅｃ＜ｔ２＜１００μ
ｓｅｃの範囲にある請求項１記載のプラズマＣＶＤ法。2. The on-time t1 in the second pulse modulation is in the range of 0.5 μsec <t1 <100 μsec, and the off-time t2 is 3 μsec <t2 <100 μ.
The plasma CVD method according to claim 1, which is in the range of sec.
に基板を曝して該基板上に薄膜を形成するプラズマＣＶ
Ｄ装置において、前記原料ガスのプラズマ化のための高
周波電力印加手段が、１ＫＨｚ以下の第１のパルス変調
及び該変調より短い周期をもつ第２のパルス変調を重畳
するとともに前記パルス変調を行う高周波波形に対し高
調波を重畳した高周波電力を印加するものであることを
特徴とするプラズマＣＶＤ装置。3. A plasma CV for converting a source gas into plasma and exposing the substrate to the plasma to form a thin film on the substrate.
In device D, the high frequency power applying means for converting the source gas into plasma superimposes a first pulse modulation of 1 KHz or less and a second pulse modulation having a shorter period than the modulation, and performs the pulse modulation. A plasma CVD apparatus, characterized in that high-frequency electric power in which harmonics are superimposed on a waveform is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32737091A JPH0793272B2 (en) | 1991-12-11 | 1991-12-11 | Plasma CVD method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32737091A JPH0793272B2 (en) | 1991-12-11 | 1991-12-11 | Plasma CVD method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05160045A JPH05160045A (en) | 1993-06-25 |
| JPH0793272B2 true JPH0793272B2 (en) | 1995-10-09 |
Family
ID=18198386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32737091A Expired - Fee Related JPH0793272B2 (en) | 1991-12-11 | 1991-12-11 | Plasma CVD method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793272B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794421A (en) * | 1993-09-21 | 1995-04-07 | Anelva Corp | Method for manufacturing amorphous silicon thin film |
| DE69424759T2 (en) * | 1993-12-28 | 2001-02-08 | Applied Materials, Inc. | Vapor deposition process in a single chamber for thin film transistors |
| JP7190948B2 (en) | 2019-03-22 | 2022-12-16 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
1991
- 1991-12-11 JP JP32737091A patent/JPH0793272B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05160045A (en) | 1993-06-25 |
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