JPH10135175A - Wafer-cleaning device - Google Patents
Wafer-cleaning deviceInfo
- Publication number
- JPH10135175A JPH10135175A JP28946296A JP28946296A JPH10135175A JP H10135175 A JPH10135175 A JP H10135175A JP 28946296 A JP28946296 A JP 28946296A JP 28946296 A JP28946296 A JP 28946296A JP H10135175 A JPH10135175 A JP H10135175A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- tank
- cleaning tank
- liquid
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 231
- 239000007788 liquid Substances 0.000 claims description 99
- 230000005484 gravity Effects 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 238000005406 washing Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、薬液を洗浄液とし
て使用するウエハ洗浄装置に関し、特に、洗浄槽浸漬時
におけるウエハへのパーティクル付着を防止するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning apparatus using a chemical solution as a cleaning liquid, and more particularly, to preventing particles from adhering to a wafer when the cleaning tank is immersed.
【0002】[0002]
【従来の技術】洗浄液の化学作用、物理エネルギを合わ
せ用いてウエハ表面にある粒子、有機物などの汚れを除
去するウエハ洗浄装置には、洗浄液を常時フィルタで濾
過循環する機能を有した循環濾過式のものがある。2. Description of the Related Art A wafer cleaning apparatus for removing dirt such as particles and organic substances on a wafer surface by using the chemical action and physical energy of a cleaning liquid together has a function of constantly filtering and circulating the cleaning liquid with a filter. There are things.
【0003】この種のウエハ洗浄装置で洗浄液がウエハ
の下方より上方に流れ、槽の上面より溢れるオーバーフ
ロー式のものを図3に基づき説明する。図3は従来のウ
エハ洗浄装置を示す概略構成図である。上面の開口した
洗浄槽1の外周には、外槽3を設けてある。外槽3の底
面には排液配管5を接続してあり、排液配管5は循環ポ
ンプ7の給液口に接続してある。循環ポンプ7の吐出口
にはフィルタ9を接続してあり、フィルタ9の出口は給
液配管11を介して洗浄槽1の底面に接続してある。An overflow-type wafer cleaning apparatus of this type in which the cleaning liquid flows upward from below the wafer and overflows from the upper surface of the tank will be described with reference to FIG. FIG. 3 is a schematic configuration diagram showing a conventional wafer cleaning apparatus. An outer tank 3 is provided on the outer periphery of the cleaning tank 1 having an open upper surface. A drainage pipe 5 is connected to the bottom of the outer tank 3, and the drainage pipe 5 is connected to a supply port of a circulation pump 7. A filter 9 is connected to a discharge port of the circulation pump 7, and an outlet of the filter 9 is connected to a bottom surface of the cleaning tank 1 via a liquid supply pipe 11.
【0004】このように構成した洗浄装置13では、例
えば、塩酸、過酸化水素、水などの混合洗浄液15を洗
浄槽1からオーバーフローさせ、オーバーフローした洗
浄液15を外槽3で受け、外槽3の洗浄液15を循環ポ
ンプ7によってフィルタ9を介して洗浄槽1に再び戻す
ことで、常時フィルタ9で濾過した洗浄液15を洗浄槽
1内に循環させている。そして、洗浄槽1内にウエハW
を浸漬することで、ウエハW表面に付着した粒子、有機
物などの汚れを除去することができた。In the cleaning device 13 configured as described above, for example, a mixed cleaning liquid 15 such as hydrochloric acid, hydrogen peroxide, and water overflows from the cleaning tank 1, and the overflowed cleaning liquid 15 is received by the outer tank 3. By returning the cleaning liquid 15 to the cleaning tank 1 via the filter 9 by the circulation pump 7, the cleaning liquid 15 filtered by the filter 9 is constantly circulated in the cleaning tank 1. Then, the wafer W is placed in the cleaning tank 1.
By immersion, dirt such as particles and organic substances adhered to the surface of the wafer W could be removed.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上述し
たオーバーフロー方式の洗浄装置13では、洗浄液15
が洗浄槽1の下方から上方に向けて流れるため、特に、
過酸化水素水を混合した洗浄液を用いて疎水性ウエハを
酸洗浄した場合、洗浄液中に発生した気泡が洗浄槽1の
下方から上方に向けて浮上し、気泡とともに浮上した異
物がウエハに付着する問題があった。また、洗浄液15
の比重より重い異物は、洗浄液15の流れによっては洗
浄槽1から外槽3へオーバーフローするに至らず、洗浄
槽底部の淀みの中に滞留してしまい、ウエハへの再付着
を生じさせる問題を包含していた。本発明は上記状況に
鑑みてなされたもので、ウエハへの気泡の付着をなくす
ことができるとともに、洗浄液より比重の重い異物の洗
浄槽底部での滞留を防止することのできるウエハ洗浄装
置の提供を目的とするものである。However, in the overflow type cleaning apparatus 13 described above, the cleaning liquid 15 is used.
Flows upward from below the washing tank 1,
When a hydrophobic wafer is acid-cleaned using a cleaning liquid mixed with a hydrogen peroxide solution, bubbles generated in the cleaning liquid float upward from below the cleaning tank 1, and foreign matters floating along with the bubbles adhere to the wafer. There was a problem. Also, the cleaning solution 15
The foreign matter heavier than the specific gravity does not overflow from the cleaning tank 1 to the outer tank 3 depending on the flow of the cleaning liquid 15, stays in the stagnation at the bottom of the cleaning tank, and causes reattachment to the wafer. Was included. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a wafer cleaning apparatus capable of eliminating air bubbles from adhering to a wafer and preventing foreign substances having a higher specific gravity than the cleaning liquid from remaining at the bottom of the cleaning tank. It is intended for.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明に係るウエハ洗浄装置は、洗浄槽と、該洗浄槽
の底部に設けた排液口と、前記洗浄槽の上面開口外周に
設けてあり洗浄液を前記洗浄槽へオーバーフローさせる
外槽と、前記排液口と該外槽とを連通させる循環配管
と、該循環配管に順次介装する循環ポンプ及びフィルタ
とを具備したことを特徴とするものである。また、ウエ
ハ洗浄装置は、第一洗浄槽と、該第一洗浄槽の底部に設
けた給液口と、該第一洗浄槽からオーバーフローした洗
浄液を受ける外槽と、該外槽からオーバーフローした洗
浄液を受ける第二洗浄槽と、該第二洗浄槽の底部に設け
た排液口と、前記給液口と該排液口とを連通させる循環
配管と、該循環配管に順次介装する循環ポンプ及びフィ
ルタとを具備したものであってもよい。According to a first aspect of the present invention, there is provided a wafer cleaning apparatus, comprising: a cleaning tank; a drain port provided at a bottom of the cleaning tank; An outer tank provided to allow the washing liquid to overflow to the washing tank, a circulation pipe communicating the drainage port with the outer tank, and a circulation pump and a filter sequentially interposed in the circulation pipe. It is assumed that. In addition, the wafer cleaning apparatus includes a first cleaning tank, a liquid supply port provided at a bottom of the first cleaning tank, an outer tank that receives a cleaning liquid that overflows from the first cleaning tank, and a cleaning liquid that overflows from the outer tank. Receiving a second cleaning tank, a drain port provided at the bottom of the second cleaning tank, a circulation pipe for communicating the liquid supply port with the drain port, and a circulation pump sequentially interposed in the circulation pipe And a filter.
【0007】請求項1記載のウエハ洗浄装置では、洗浄
液が洗浄槽内で上方から下方に向かって流れ、洗浄液の
比重より重い異物が、洗浄槽の排液口から排出され、フ
ィルタによって捕捉される。また、洗浄液で発生した気
泡は、洗浄液が外槽から洗浄槽へオーバーフローする
際、浮力により洗浄液表面へ浮き上がり、大気中に逃が
される。これによって、洗浄槽内では、気泡の除去され
た洗浄液のみがウエハに接触することとなる。また、請
求項2記載のウエハ洗浄装置では、洗浄液が第一洗浄槽
で下方から上方に向かって流れ、第二洗浄槽で上方から
下方に向かって流れる。このことから、第一洗浄槽で
は、洗浄液の比重より軽い異物が除去され、第二洗浄槽
では、洗浄液の比重より重い異物が排液口から排出さ
れ、フィルタによって捕捉される。また、洗浄液に発生
した気泡は、洗浄液が第一洗浄槽から第二洗浄槽へオー
バーフローする際、除去される。According to the first aspect of the present invention, the cleaning liquid flows downward from above in the cleaning tank, and foreign matters heavier than the specific gravity of the cleaning liquid are discharged from the drain port of the cleaning tank and captured by the filter. . Further, when the cleaning liquid overflows from the outer tank to the cleaning tank, bubbles generated by the cleaning liquid float on the surface of the cleaning liquid due to buoyancy and escape to the atmosphere. As a result, in the cleaning tank, only the cleaning liquid from which bubbles have been removed comes into contact with the wafer. Further, in the wafer cleaning apparatus according to the second aspect, the cleaning liquid flows upward from below in the first cleaning tank, and flows downward from above in the second cleaning tank. For this reason, in the first cleaning tank, foreign substances having a specific gravity lower than the specific gravity of the cleaning liquid are removed, and in the second cleaning tank, foreign substances having a specific gravity higher than the specific gravity of the cleaning liquid are discharged from the drain port and captured by the filter. In addition, bubbles generated in the cleaning liquid are removed when the cleaning liquid overflows from the first cleaning tank to the second cleaning tank.
【0008】[0008]
【発明の実施の形態】以下、本発明に係るウエハ洗浄装
置の好適な実施の形態を図面を参照して詳細に説明す
る。図1は本発明に係るウエハ洗浄装置の第一実施形態
を示す概略構成図である。上面の開口した洗浄槽21の
下部には漏斗状の底部23を形成してあり、底部23の
中央は排液口25となっている。この実施形態では、底
部23の表面に排液案内部29を設けてある。排液案内
部29は、上面31をすり鉢状に形成してあり、この上
面の中央に排液口25へ連通する中央排液口33を開口
するとともに、上面31の縁部に同じく排液口25へ連
通する複数の外側排液口35を開口してある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wafer cleaning apparatus according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a first embodiment of a wafer cleaning apparatus according to the present invention. A funnel-shaped bottom portion 23 is formed at a lower portion of the cleaning tank 21 having an open upper surface, and a center of the bottom portion 23 is a drainage port 25. In this embodiment, a drain guide 29 is provided on the surface of the bottom 23. The drain guide 29 has an upper surface 31 formed in a mortar shape, and has a central drain outlet 33 communicating with the drain outlet 25 at the center of the upper surface, and also has a drain outlet at the edge of the upper surface 31. A plurality of outer liquid discharge ports 35 communicating with the outer liquid discharge port 25 are opened.
【0009】このように、排液案内部29を設けた洗浄
槽21では、洗浄液より比重の重い異物を、排液案内部
29の縁部及び中央部から排液口25へと効果的に導く
ことができ、洗浄槽底部23における異物の滞留を防止
できるようになっている。なお、洗浄槽21の底部23
は、排液案内部29を設けず、漏斗状の傾斜面のみとす
ることによっても、異物の滞留を防止できるものであ
る。As described above, in the cleaning tank 21 provided with the drain guide 29, foreign matters having a higher specific gravity than the cleaning liquid are effectively guided from the edge and the center of the drain guide 29 to the drain outlet 25. This can prevent foreign matter from staying in the washing tank bottom 23. The bottom 23 of the cleaning tank 21
Can prevent foreign matters from being retained even by providing only the funnel-shaped inclined surface without providing the drainage guide portion 29.
【0010】洗浄槽21の排液口25には循環配管(排
液配管)37を接続してあり、排液配管37は循環ポン
プ39の給液口に接続してある。循環ポンプ39の吐出
口にはフィルタ41を接続してあり、フィルタ41の出
口は循環配管(給液配管)43を介して外槽45の底面
に接続してある。外槽45は洗浄槽21の上部開口周囲
に設けてあり、外槽45の外周壁47は洗浄槽21の外
壁(換言すれば、外槽45の内壁)21aより高く形成
してある。[0010] A circulation pipe (drainage pipe) 37 is connected to the drainage port 25 of the washing tank 21, and the drainage pipe 37 is connected to a liquid supply port of a circulation pump 39. A filter 41 is connected to a discharge port of the circulation pump 39, and an outlet of the filter 41 is connected to a bottom surface of the outer tank 45 via a circulation pipe (liquid supply pipe) 43. The outer tub 45 is provided around the upper opening of the cleaning tub 21, and the outer peripheral wall 47 of the outer tub 45 is formed higher than the outer wall 21a of the cleaning tub 21 (in other words, the inner wall of the outer tub 45).
【0011】次に、このように構成した洗浄装置51の
作用を説明する。洗浄装置51の洗浄槽21には、例え
ば、塩酸、過酸化水素、水などの混合洗浄液53を満た
してある。この洗浄槽21内にウエハWがその円周上の
3点を固定した状態で例えば縦置き(浸漬)される。そ
して循環ポンプ39を駆動すると、洗浄液53は底部2
3の排液案内部29に設けた中央排液口33及び外側排
液口35を介して排液口25へと吸い込まれる。Next, the operation of the thus-configured cleaning apparatus 51 will be described. The cleaning tank 21 of the cleaning device 51 is filled with a mixed cleaning liquid 53 such as hydrochloric acid, hydrogen peroxide, and water. The wafer W is placed, for example, vertically (immersed) in the cleaning tank 21 with three points on its circumference fixed. Then, when the circulation pump 39 is driven, the cleaning liquid 53 is discharged from the bottom 2.
The liquid is sucked into the liquid discharge port 25 through the central liquid discharge port 33 and the external liquid discharge port 35 provided in the third liquid discharge guide portion 29.
【0012】排液口25へ吸い込まれた洗浄液53は、
循環ポンプ39によってフィルタ41へ供給され、フィ
ルタ41を通過して外槽45へ送られる。外槽45へ送
られた洗浄液53は、外槽45内での水位が洗浄槽21
の外壁21aより高くなると、この外壁21aからオー
バーフローして、洗浄槽21内へと流入する。洗浄槽2
1内へ流入した洗浄液53は、洗浄槽21内を上方から
下方に向かって流れ、再び底部23の排液口25から吸
い込まれることで、常時フィルタ41で濾過されて洗浄
槽21を循環することとなる。The cleaning liquid 53 sucked into the drain 25 is
The water is supplied to the filter 41 by the circulation pump 39, passes through the filter 41, and is sent to the outer tank 45. The cleaning liquid 53 sent to the outer tank 45 has a water level in the outer tank 45 of the cleaning tank 21.
When it becomes higher than the outer wall 21a, it overflows from the outer wall 21a and flows into the cleaning tank 21. Cleaning tank 2
The washing liquid 53 flowing into the washing tank 1 flows downward from above in the washing tank 21, and is sucked again from the drain port 25 of the bottom 23, so that it is constantly filtered by the filter 41 and circulates in the washing tank 21. Becomes
【0013】この洗浄装置51では、洗浄液53が洗浄
槽21内で上方から下方に向かって流れることから、洗
浄液53の比重より重い異物が、洗浄槽21の排液案内
部29に案内されて、排液口25から排出される。そし
て、排液口25から排出された異物は、フィルタ41を
通過する際に、このフィルタ41によって捕捉されるこ
ととなる。In the cleaning device 51, since the cleaning liquid 53 flows downward from above in the cleaning tank 21, foreign matter heavier than the specific gravity of the cleaning liquid 53 is guided to the drain guide 29 of the cleaning tank 21. The liquid is discharged from the drain port 25. Then, the foreign matter discharged from the drain port 25 is captured by the filter 41 when passing through the filter 41.
【0014】また、特に過酸化水素水を混合した洗浄液
53では気泡が発生するが、気泡は、洗浄液53が外槽
45から洗浄槽21へオーバーフローする際、オーバー
フロー直後に浮力により洗浄液表面へ浮き上がり、大気
中に逃がされ、洗浄槽21の深く(ウエハ浸漬位置)へ
進入することがない。即ち、洗浄槽21内では、気泡の
除去された洗浄液53のみがウエハWに接触することと
なる。In particular, bubbles are generated in the cleaning liquid 53 mixed with the hydrogen peroxide solution. When the cleaning liquid 53 overflows from the outer tank 45 to the cleaning tank 21, the bubbles rise to the surface of the cleaning liquid by buoyancy immediately after the overflow. It is not released into the atmosphere and does not enter deeply into the cleaning tank 21 (wafer immersion position). That is, in the cleaning tank 21, only the cleaning liquid 53 from which bubbles have been removed comes into contact with the wafer W.
【0015】このように上述の洗浄装置51によれば、
洗浄槽21の外周に外槽45を設け、外槽45に供給し
た洗浄液53を洗浄槽21にオーバーフローさせて供給
するようにしたので、洗浄液53で発生した気泡が外槽
45から洗浄槽21へオーバーフローする際、洗浄液表
面へ浮き上がり、洗浄液53から除去されることとな
る。この結果、洗浄槽21内において、気泡を除去した
洗浄液53のみをウエハWに接触させることができ、気
泡の接触により生じるウエハWへの異物の付着を防止す
ることができる。As described above, according to the cleaning device 51 described above,
An outer tank 45 is provided on the outer periphery of the cleaning tank 21, and the cleaning liquid 53 supplied to the outer tank 45 is supplied to the cleaning tank 21 by overflowing, so that bubbles generated in the cleaning liquid 53 flow from the outer tank 45 to the cleaning tank 21. When overflow occurs, it floats on the surface of the cleaning liquid and is removed from the cleaning liquid 53. As a result, in the cleaning tank 21, only the cleaning liquid 53 from which bubbles have been removed can be brought into contact with the wafer W, and foreign substances can be prevented from adhering to the wafer W due to the contact of bubbles.
【0016】また、排液口25を洗浄槽21の底部23
に設け、洗浄槽21の上面開口からオーバーフローさせ
た洗浄液53を底部23の排液口25から排液するの
で、洗浄液53が洗浄槽21内の上方から下方に向かっ
て流れることになり、洗浄液53の比重より重い異物
を、排液口25から速やかに排出してフィルタ41によ
って捕捉することができる。この結果、比重の重い異物
が洗浄槽底部の淀みの中に滞留せず、ウエハへの再付着
を防止することができる。The drain port 25 is connected to the bottom 23 of the cleaning tank 21.
The cleaning liquid 53 that overflows from the upper opening of the cleaning tank 21 is drained from the drain port 25 of the bottom 23, so that the cleaning liquid 53 flows downward from above in the cleaning tank 21. Foreign matter heavier than the specific gravity can be quickly discharged from the drain port 25 and captured by the filter 41. As a result, the foreign matter having a high specific gravity does not stay in the stagnation at the bottom of the cleaning tank, and reattachment to the wafer can be prevented.
【0017】次に、本発明に係るウエハ洗浄装置の第二
実施形態を図2に基づき説明する。図2は本発明に係る
ウエハ洗浄装置の第二実施形態を示す概略構成図であ
る。この洗浄装置61は、上面の開口した第一洗浄槽6
3と第二洗浄槽65とを一体化させてあり、第一洗浄槽
63の周壁67を第二洗浄槽65の周壁69より高く形
成してある。また、第一洗浄槽63と第二洗浄槽65と
の上面開口外周には外槽71を設けてあり、外槽71の
周壁73は第一洗浄槽63の周壁67と略同等かそれ以
上の高さに形成してある。Next, a second embodiment of the wafer cleaning apparatus according to the present invention will be described with reference to FIG. FIG. 2 is a schematic configuration diagram showing a second embodiment of the wafer cleaning apparatus according to the present invention. The cleaning device 61 includes a first cleaning tank 6 having an open upper surface.
3 and the second cleaning tank 65 are integrated, and the peripheral wall 67 of the first cleaning tank 63 is formed higher than the peripheral wall 69 of the second cleaning tank 65. Further, an outer tank 71 is provided on the outer periphery of the upper surface opening of the first washing tank 63 and the second washing tank 65, and a peripheral wall 73 of the outer tank 71 is substantially equal to or larger than the peripheral wall 67 of the first washing tank 63. Formed at height.
【0018】第二洗浄槽65の下部には漏斗状の底部7
5を形成してあり、底部75の中央には排液口25を設
けてある。排液口25には循環配管(排液配管)37を
接続してあり、排液配管37は循環ポンプ39の給液口
に接続してある。循環ポンプ39の吐出口にはフィルタ
41を接続してあり、フィルタ41の出口は循環配管
(給液配管)43を介して第一洗浄槽63の底部77に
設けた給液口79に接続してある。The lower part of the second washing tank 65 has a funnel-shaped bottom 7.
5 is formed, and a drain port 25 is provided at the center of the bottom part 75. A circulation pipe (drain pipe) 37 is connected to the drain port 25, and the drain pipe 37 is connected to a supply port of a circulation pump 39. A filter 41 is connected to a discharge port of the circulation pump 39, and an outlet of the filter 41 is connected to a liquid supply port 79 provided at a bottom 77 of the first cleaning tank 63 via a circulation pipe (liquid supply pipe) 43. It is.
【0019】次に、このように構成した洗浄装置61の
作用を説明する。第一洗浄槽63と第二洗浄槽65に
は、例えば、塩酸、過酸化水素、水などの混合洗浄液5
3を満たしてある。この各洗浄槽63、65内に、ウエ
ハWが例えばその円周上を固定されて縦置き状に浸漬さ
れる。そして循環ポンプ39を駆動すると、洗浄液53
は第一洗浄槽63の給液口79から第一洗浄槽63内に
流入し、第一洗浄槽63の上部開口からオーバーフロー
する。第一洗浄槽63からオーバーフローした洗浄液5
3は、直接第二洗浄槽65へ流入するか又は外槽71を
経由して第二洗浄槽65へ流入し、第二洗浄槽65の底
部75に設けた排液口25へ吸い込まれる。Next, the operation of the cleaning device 61 thus configured will be described. In the first cleaning tank 63 and the second cleaning tank 65, for example, a mixed cleaning liquid 5 such as hydrochloric acid, hydrogen peroxide, and water is used.
3 is satisfied. In each of the cleaning tanks 63 and 65, for example, the wafer W is immersed in a vertically placed shape with its circumference fixed. When the circulation pump 39 is driven, the cleaning liquid 53
Flows into the first cleaning tank 63 from the liquid supply port 79 of the first cleaning tank 63, and overflows from the upper opening of the first cleaning tank 63. Cleaning liquid 5 overflowing from first cleaning tank 63
3 flows directly into the second cleaning tank 65 or flows into the second cleaning tank 65 via the outer tank 71, and is sucked into the drain port 25 provided at the bottom 75 of the second cleaning tank 65.
【0020】排液口25へ吸い込まれた洗浄液53は、
循環ポンプ39によってフィルタ41へ供給され、フィ
ルタ41を通過して再び第一洗浄槽63の給液口79に
供給されることで、常時フィルタ41で濾過されて第一
洗浄槽63、第二洗浄槽65を循環することとなる。The cleaning liquid 53 sucked into the drain 25 is
The water is supplied to the filter 41 by the circulation pump 39, passes through the filter 41, and is again supplied to the liquid supply port 79 of the first cleaning tank 63. The tank 65 is circulated.
【0021】この洗浄装置61では、洗浄液53が第一
洗浄槽63で下方から上方に向かって流れ、第二洗浄槽
65で上方から下方に向かって流れる。このことから、
第一洗浄槽63では、洗浄液53の比重より軽い異物が
除去され、第二洗浄槽65では、洗浄液53の比重より
重い異物が排液口25から排出され、フィルタ41によ
って捕捉されることとなる。また、洗浄液53に発生し
た気泡は、洗浄液53が第一洗浄槽63から第二洗浄槽
65へオーバーフローする際、浮力により洗浄液表面へ
浮き上がり、大気中に逃がされることで、除去されるこ
とになる。In the cleaning device 61, the cleaning liquid 53 flows upward from below in the first cleaning tank 63, and flows downward from above in the second cleaning tank 65. From this,
In the first cleaning tank 63, foreign substances lighter than the specific gravity of the cleaning liquid 53 are removed, and in the second cleaning tank 65, foreign substances heavier than the specific gravity of the cleaning liquid 53 are discharged from the drain port 25 and captured by the filter 41. . In addition, when the cleaning liquid 53 overflows from the first cleaning tank 63 to the second cleaning tank 65, the bubbles generated in the cleaning liquid 53 are lifted to the surface of the cleaning liquid by buoyancy and escaped to the atmosphere, so that they are removed. .
【0022】このように上述の洗浄装置61によれば、
第一洗浄槽63と第二洗浄槽65とを一体化させ、第一
洗浄槽63からオーバーフローさせた洗浄液53を、第
二洗浄槽65の底部75から排液してフィルタ41を通
過させて再び第一洗浄槽63の底部77から供給するよ
うにしたので、オーバーフローによって気泡が除去でき
るとともに、洗浄液53が下方から上方に向かって流れ
る第一洗浄槽63では、比重の軽い異物が除去でき、洗
浄液53が上方から下方に向かって流れる第二洗浄槽6
5では、比重の重い異物が除去できる。As described above, according to the cleaning device 61 described above,
The first cleaning tank 63 and the second cleaning tank 65 are integrated, and the cleaning liquid 53 overflowed from the first cleaning tank 63 is drained from the bottom 75 of the second cleaning tank 65, passes through the filter 41, and is again discharged. Since the liquid is supplied from the bottom 77 of the first cleaning tank 63, air bubbles can be removed by overflow, and in the first cleaning tank 63 in which the cleaning liquid 53 flows upward from below, foreign matter having a low specific gravity can be removed. The second cleaning tank 6 53 flows downward from above.
In 5, the foreign matter having a high specific gravity can be removed.
【0023】従って、洗浄装置61によれば、先ずウエ
ハWを第二洗浄槽65に浸漬することで、比重の重い異
物を下方向の液流により沈ませて除去し且つこの異物を
フィルタ41で捕捉でき、次いで、ウエハWを第一洗浄
槽63に浸漬することで、比重の軽い異物を上方向の液
流により浮上させて除去し且つこの異物をオーバーフロ
ーで除去でき、上述の気泡の除去とも相まって、洗浄槽
浸漬時におけるウエハWへのパーティクル付着を確実に
防止することができる。Therefore, according to the cleaning device 61, the wafer W is first immersed in the second cleaning tank 65, whereby foreign matter having a high specific gravity is settled and removed by the downward liquid flow, and the foreign matter is removed by the filter 41. By capturing, and then immersing the wafer W in the first cleaning tank 63, the foreign matter having a low specific gravity can be removed by floating by an upward liquid flow, and the foreign matter can be removed by overflow. In addition, it is possible to reliably prevent particles from adhering to the wafer W when immersing in the cleaning tank.
【0024】なお、上述の第二の実施形態による洗浄装
置61では、第一洗浄槽63からオーバーフローした洗
浄液53を、直接第二洗浄槽65へ流入するか又は外槽
71を経由して第二洗浄槽65へ流入させることとした
が、第一洗浄槽63から第二洗浄槽65へのオーバーフ
ローは、外槽71を経由してのみ行うこととしてもよ
い。この場合、洗浄液53より比重の軽い異物を捕捉す
る不図示のフィルタを外槽71に設けることで、オーバ
ーフローにより第一洗浄槽63から溢れた異物をこのフ
ィルタで捕捉し、比重の軽い異物の第二洗浄槽65への
流入を防止することができる。In the cleaning apparatus 61 according to the second embodiment, the cleaning liquid 53 overflowing from the first cleaning tank 63 flows directly into the second cleaning tank 65 or passes through the outer tank 71 to the second cleaning tank 65. Although the flow is made to flow into the cleaning tank 65, the overflow from the first cleaning tank 63 to the second cleaning tank 65 may be performed only via the outer tank 71. In this case, by providing a filter (not shown) for capturing foreign matter having a lighter specific gravity than the cleaning liquid 53 in the outer tank 71, foreign matter overflowing from the first cleaning tank 63 due to overflow is captured by this filter, and the foreign matter having a lighter specific gravity is captured by the filter. It is possible to prevent the inflow into the second washing tank 65.
【0025】また、上述の第一、第二実施形態による洗
浄装置51、61ではウエハを縦置きして液中に浸漬し
たが、所謂横置き(水平)にして洗浄することも可能で
ある。又上記二形態は、薬液洗浄装置に適用した場合を
例に説明したが、本発明による洗浄装置は、純水を使用
した超音波洗浄装置に適用しても同様の効果を奏するも
のである。In the cleaning apparatuses 51 and 61 according to the first and second embodiments described above, the wafer is placed vertically and immersed in the liquid. However, it is also possible to perform cleaning by placing the wafer horizontally (horizontally). Although the above two embodiments have been described by taking as an example the case where the present invention is applied to a chemical cleaning apparatus, the cleaning apparatus according to the present invention has the same effect when applied to an ultrasonic cleaning apparatus using pure water.
【0026】[0026]
【発明の効果】以上詳細に説明したように、請求項1に
係るウエハ洗浄装置によれば、洗浄槽の外周に外槽を設
け、外槽に供給した洗浄液を洗浄槽にオーバーフローさ
せて供給するようにしたので、洗浄液が洗浄槽へオーバ
ーフローする際、気泡が洗浄液表面へ浮き上がり、洗浄
液から除去されることとなる。この結果、気泡を除去し
た洗浄液のみをウエハに接触させることができ、気泡の
接触により生じるウエハへの異物の付着を防止すること
ができる。また、洗浄液が洗浄槽内の上方から下方に向
かって流れることになり、洗浄液の比重より重い異物を
フィルタによって捕捉することができる。この結果、比
重の重い異物が洗浄槽底部の淀みの中に滞留せず、ウエ
ハへの再付着を防止することができる。また、請求項2
に係るウエハ洗浄装置によれば、第一洗浄槽と第二洗浄
槽とを一体化させ、第一洗浄槽からオーバーフローさせ
た洗浄液を、第二洗浄槽の底部から排液してフィルタを
通過させて再び第一洗浄槽の底部から供給するようにし
たので、オーバーフローによって気泡が除去できるとと
もに、洗浄液が下方から上方に向かって流れる第一洗浄
槽では、比重の軽い異物が除去でき、洗浄液が上方から
下方に向かって流れる第二洗浄槽では、比重の重い異物
を除去することができる。As described above in detail, according to the wafer cleaning apparatus of the first aspect, the outer tank is provided on the outer periphery of the cleaning tank, and the cleaning liquid supplied to the outer tank overflows and is supplied to the cleaning tank. Thus, when the cleaning liquid overflows to the cleaning tank, bubbles rise to the surface of the cleaning liquid and are removed from the cleaning liquid. As a result, only the cleaning liquid from which the bubbles have been removed can be brought into contact with the wafer, and the adhesion of foreign substances to the wafer caused by the contact of the bubbles can be prevented. Further, the cleaning liquid flows downward from above in the cleaning tank, so that foreign substances heavier than the specific gravity of the cleaning liquid can be captured by the filter. As a result, the foreign matter having a high specific gravity does not stay in the stagnation at the bottom of the cleaning tank, and reattachment to the wafer can be prevented. Claim 2
According to the wafer cleaning apparatus according to the first cleaning tank and the second cleaning tank are integrated, the cleaning liquid overflowed from the first cleaning tank is drained from the bottom of the second cleaning tank and passed through the filter. Again from the bottom of the first cleaning tank, so that air bubbles can be removed by overflow, and in the first cleaning tank in which the cleaning liquid flows upward from below, foreign substances having a low specific gravity can be removed, and the cleaning liquid can be removed upward. In the second washing tank that flows downward from above, foreign matter having a high specific gravity can be removed.
【図1】本発明に係るウエハ洗浄装置の第一実施形態を
示す概略構成図である。FIG. 1 is a schematic configuration diagram showing a first embodiment of a wafer cleaning apparatus according to the present invention.
【図2】本発明に係るウエハ洗浄装置の第二実施形態を
示す概略構成図である。FIG. 2 is a schematic configuration diagram showing a second embodiment of the wafer cleaning apparatus according to the present invention.
【図3】従来のウエハ洗浄装置を示す概略構成図であ
る。FIG. 3 is a schematic configuration diagram showing a conventional wafer cleaning apparatus.
21 洗浄槽 23、75、77 底部 25 排液口 37、43 循環配管 39 循環ポンプ 41 フィルタ 45、71 外槽 51、61 ウエハ洗浄装置 53 洗浄液 63 第一洗浄槽 65 第二洗浄槽 79 給液口 Reference Signs List 21 cleaning tank 23, 75, 77 bottom 25 drain port 37, 43 circulation pipe 39 circulation pump 41 filter 45, 71 outer tank 51, 61 wafer cleaning device 53 cleaning liquid 63 first cleaning tank 65 second cleaning tank 79 liquid supply port
Claims (3)
浄槽へオーバーフローさせる外槽と、 前記排液口と該外槽とを連通させる循環配管と、 該循環配管に順次介装する循環ポンプ及びフィルタとを
具備したことを特徴とするウエハ洗浄装置。A cleaning tank; a drain port provided at a bottom of the cleaning tank; an outer tank provided at an outer periphery of an upper surface opening of the cleaning tank to overflow a cleaning liquid into the cleaning tank; A wafer cleaning apparatus, comprising: a circulation pipe communicating with the outer tank; and a circulation pump and a filter sequentially interposed in the circulation pipe.
槽と、 該外槽からオーバーフローした洗浄液を受ける第二洗浄
槽と、 該第二洗浄槽の底部に設けた排液口と、 前記給液口と該排液口とを連通させる循環配管と、 該循環配管に順次介装する循環ポンプ及びフィルタとを
具備したことを特徴とするウエハ洗浄装置。2. A first cleaning tank, a liquid supply port provided at a bottom portion of the first cleaning tank, an outer tank receiving a cleaning liquid overflowing from the first cleaning tank, and receiving an overflowing cleaning liquid from the outer tank. A second cleaning tank, a drain port provided at the bottom of the second cleaning tank, a circulation pipe for communicating the liquid supply port with the drain port, and a circulation pump and a filter sequentially interposed in the circulation pipe A wafer cleaning apparatus comprising:
るフィルタを前記外槽に設けたことを特徴とする請求項
2記載のウエハ洗浄装置。3. The wafer cleaning apparatus according to claim 2, wherein a filter for capturing foreign matter having a specific gravity lower than that of the cleaning liquid is provided in the outer tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28946296A JP3898257B2 (en) | 1996-10-31 | 1996-10-31 | Wafer cleaning apparatus and wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28946296A JP3898257B2 (en) | 1996-10-31 | 1996-10-31 | Wafer cleaning apparatus and wafer cleaning method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135175A true JPH10135175A (en) | 1998-05-22 |
| JPH10135175A5 JPH10135175A5 (en) | 2004-10-21 |
| JP3898257B2 JP3898257B2 (en) | 2007-03-28 |
Family
ID=17743590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28946296A Expired - Fee Related JP3898257B2 (en) | 1996-10-31 | 1996-10-31 | Wafer cleaning apparatus and wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3898257B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040041763A (en) * | 2002-11-11 | 2004-05-20 | 삼성전자주식회사 | semiconductor wafer washing system and method there of |
| KR100821831B1 (en) * | 2006-11-22 | 2008-04-14 | 동부일렉트로닉스 주식회사 | Chemical Circulator with Wafer Guide Bubble Removal System |
| JP2008093529A (en) * | 2006-10-10 | 2008-04-24 | Nidec Sankyo Corp | Washing apparatus and washing method |
| JP2010225832A (en) * | 2009-03-24 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| CN101620982B (en) | 2008-07-02 | 2011-07-06 | 中芯国际集成电路制造(北京)有限公司 | Wafer cleaning method and cleaning device |
| CN112349629A (en) * | 2020-10-30 | 2021-02-09 | 北京北方华创微电子装备有限公司 | Cleaning tank assembly and semiconductor cleaning equipment |
| CN114256103A (en) * | 2016-01-12 | 2022-03-29 | 东京毅力科创株式会社 | Substrate processing apparatus and cleaning method for substrate processing apparatus |
-
1996
- 1996-10-31 JP JP28946296A patent/JP3898257B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040041763A (en) * | 2002-11-11 | 2004-05-20 | 삼성전자주식회사 | semiconductor wafer washing system and method there of |
| US7931035B2 (en) * | 2002-11-11 | 2011-04-26 | Samsung Electronics Co., Ltd. | Method of and apparatus for cleaning semiconductor wafers |
| JP2008093529A (en) * | 2006-10-10 | 2008-04-24 | Nidec Sankyo Corp | Washing apparatus and washing method |
| KR100821831B1 (en) * | 2006-11-22 | 2008-04-14 | 동부일렉트로닉스 주식회사 | Chemical Circulator with Wafer Guide Bubble Removal System |
| CN101620982B (en) | 2008-07-02 | 2011-07-06 | 中芯国际集成电路制造(北京)有限公司 | Wafer cleaning method and cleaning device |
| JP2010225832A (en) * | 2009-03-24 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| CN114256103A (en) * | 2016-01-12 | 2022-03-29 | 东京毅力科创株式会社 | Substrate processing apparatus and cleaning method for substrate processing apparatus |
| CN112349629A (en) * | 2020-10-30 | 2021-02-09 | 北京北方华创微电子装备有限公司 | Cleaning tank assembly and semiconductor cleaning equipment |
| CN112349629B (en) * | 2020-10-30 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Cleaning tank components and semiconductor cleaning equipment |
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| Publication number | Publication date |
|---|---|
| JP3898257B2 (en) | 2007-03-28 |
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