JPH10298771A - Electroless nickel plating method - Google Patents

Electroless nickel plating method

Info

Publication number
JPH10298771A
JPH10298771A JP10502197A JP10502197A JPH10298771A JP H10298771 A JPH10298771 A JP H10298771A JP 10502197 A JP10502197 A JP 10502197A JP 10502197 A JP10502197 A JP 10502197A JP H10298771 A JPH10298771 A JP H10298771A
Authority
JP
Japan
Prior art keywords
nickel plating
electroless nickel
film
plating solution
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10502197A
Other languages
Japanese (ja)
Inventor
Kiyoaki Ihara
清暁 井原
Koji Takagi
光司 高木
Shinichi Iketani
晋一 池谷
Shoichi Fujimori
正一 藤森
Isao Hirata
勲夫 平田
Hiroaki Fujiwara
弘明 藤原
Satoru Ogawa
悟 小川
Shuji Maeda
修二 前田
Yoshihiro Nakagawa
義廣 中川
Masayuki Ishihara
政行 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP10502197A priority Critical patent/JPH10298771A/en
Publication of JPH10298771A publication Critical patent/JPH10298771A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing of the conductive pattern
    • H05K3/243Reinforcing of the conductive pattern characterised by selective plating, e.g. for finish plating of pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing of the conductive pattern
    • H05K3/244Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Landscapes

  • Chemically Coating (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electroless nickel plating method that is a electroless nickel plating method of forming a resist film on the surface of an org. substrate having conductor circuits on the surface on the side having these conductor circuits, then immersing the substrate into an electroless nickel plating liquid to form nickel plating films, and that can avoid the formation of the parts not forming nickel plating films. SOLUTION: In this method for forming nickel plating films on the surfaces of the conductor circuits 11, the conductor circuits 11 are immersed into the first electroless nickel plating liquid 35 to form the first nickel plating film 30 on the surfaces of the conductor circuits 11 and thereafter, the conductor circuits are immersed into the second electroless nickel plating liquid 36 of the deposition rate of nickel higher than that of the first electroless nickel plating liquid 35, by which the second nickel plating films 31 are formed on the surfaces of the first nickel plating films 30.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、プリント配線板の
製造時行われる、無電解ニッケルメッキの方法に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for electroless nickel plating which is performed during the manufacture of a printed wiring board.

【0002】[0002]

【従来の技術】電気・電子機器等に使用されるプリント
配線板として、はんだの付着性を向上させて電子部品を
実装するときの信頼性を高める目的や、コネクタに差し
込んで接触させる接続信頼性を高める目的等のために、
表面に金メッキ皮膜を形成した導体回路を有するプリン
ト配線板が用いられている。
2. Description of the Related Art As a printed wiring board used for electric and electronic equipment, the purpose is to improve the adhesion of solder to improve the reliability of mounting electronic components, and to provide the connection reliability of inserting and contacting a connector. For the purpose of enhancing
2. Description of the Related Art A printed wiring board having a conductor circuit having a gold plating film formed on a surface is used.

【0003】この表面に金メッキ皮膜を形成した導体回
路を有するプリント配線板は、例えば以下のような工程
で製造されている。プリント配線板の材料として、図2
(a)に示すような、銅箔層12を表面に有する、有機
系の基板10を用いる。そして、図2(b)に示すよう
に、導体回路を形成しようとする部分の基板10表面に
エッチング用レジスト皮膜25を形成した後、そのレジ
スト皮膜25で被覆されていない部分の銅箔層12をエ
ッチングして、図2(c)に示すように、銅製の導体回
路11を形成する。
A printed wiring board having a conductor circuit having a gold plating film formed on its surface is manufactured by, for example, the following steps. Fig. 2
An organic substrate 10 having a copper foil layer 12 on the surface as shown in FIG. Then, as shown in FIG. 2B, after forming a resist film 25 for etching on the surface of the substrate 10 where a conductive circuit is to be formed, the copper foil layer 12 not covered with the resist film 25 is formed. Is etched to form a copper conductive circuit 11 as shown in FIG.

【0004】次いで、そのレジスト皮膜25を剥離して
銅製の導体回路11を露出させた後、図2(d)に示す
ように、金メッキ皮膜の形成を予定しない部分の基板1
0表面に、メッキ用レジスト皮膜20を形成する。
Then, after the resist film 25 is peeled to expose the copper conductive circuit 11, as shown in FIG. 2 (d), a portion of the substrate 1 where a gold plating film is not to be formed is to be formed.
On the zero surface, a plating resist film 20 is formed.

【0005】次いで、図2(e)に示すように、金メッ
キの析出性を安定させるために、メッキ用レジスト皮膜
20で被覆されていない銅製の導体回路11の表面に無
電解ニッケルメッキを行って、ニッケルメッキ皮膜50
を形成する。次いで、置換無電解金メッキを行って、そ
のニッケルメッキ皮膜50の表面に金メッキ皮膜60を
形成する方法で製造されている。
[0005] Next, as shown in FIG. 2 (e), in order to stabilize the deposition property of the gold plating, the surface of the copper conductive circuit 11 not covered with the plating resist film 20 is subjected to electroless nickel plating. , Nickel plating film 50
To form Subsequently, the electroless gold plating is performed to form a gold plating film 60 on the surface of the nickel plating film 50.

【0006】なお、無電解ニッケルメッキや置換無電解
金メッキの方法としては、一般に、無電解ニッケルメッ
キ液や金メッキ液に基板10を浸漬する方法で行われて
いる。また、上記置換無電解金メッキは、ニッケルメッ
キ皮膜50の一部又は全部と置き換わって金メッキ皮膜
60が形成されるメッキであるため、ニッケルメッキ皮
膜50の形成の良否が、そのまま金メッキ皮膜60の付
き回り性に影響を及ぼすメッキである。
Incidentally, as a method of electroless nickel plating or displacement electroless gold plating, generally, a method of immersing the substrate 10 in an electroless nickel plating solution or a gold plating solution is used. In addition, since the substitutional electroless gold plating is a plating in which the gold plating film 60 is formed by replacing a part or all of the nickel plating film 50, the quality of the formation of the nickel plating film 50 depends on the rotation of the gold plating film 60 as it is. This is plating that affects the properties.

【0007】なお、上記メッキ用レジスト皮膜20の厚
みは、銅製の導体回路11の厚みと比較して、一般に厚
いため、ニッケルメッキ皮膜50を形成しようとする場
合には、図2(d)に示す、メッキ用レジスト皮膜20
と銅製の導体回路11等で形成された凹部21の底面部
分まで、活性が高い部分の無電解ニッケルメッキ液が供
給されるように、無電解ニッケルメッキ液を撹拌した
り、基板10を揺動させて、ニッケルメッキ皮膜50を
形成することが行われている。
Since the thickness of the plating resist film 20 is generally thicker than the thickness of the copper conductive circuit 11, when the nickel plating film 50 is to be formed, the thickness of the resist film 20 is as shown in FIG. Shown is a resist film 20 for plating.
The electroless nickel plating solution is stirred or the substrate 10 is swung so that a highly active portion of the electroless nickel plating solution is supplied to the bottom surface of the concave portion 21 formed by the copper conductive circuit 11 and the like. Thus, a nickel plating film 50 is formed.

【0008】近年のプリント配線板の高密度実装化に伴
い、信号やランド等の導体回路11も小幅化、小径化す
る傾向にある。そのため、ニッケルメッキ皮膜50や金
メッキ皮膜60を形成しようとする部分の大きさも小型
化し、上記ニッケルメッキ皮膜50を形成しようとする
部分に、メッキ用レジスト皮膜20等によって形成され
た凹部21の開口部の大きさも小型化する傾向にある。
With the recent high-density mounting of printed wiring boards, the conductor circuits 11 for signals, lands and the like also tend to be reduced in width and diameter. Therefore, the size of the portion where the nickel plating film 50 or the gold plating film 60 is to be formed is also reduced, and the opening of the concave portion 21 formed by the plating resist film 20 or the like is formed in the portion where the nickel plating film 50 is to be formed. Also tends to be smaller.

【0009】なお、無電解ニッケルメッキは、ニッケル
を析出する際に、化学反応によって水素ガスを発生する
ものが一般的である。そして上記のような、開口部の大
きさが小型化した凹部21の場合、無電解ニッケルメッ
キ液の撹拌や、基板10の揺動を行っても、この凹部の
内側部分へのメッキ液の供給量は低下しやすく、図3に
示すように、この凹部21の壁面や導体回路11の表面
に付着して動かない状態の水素ガスの泡70が、形成さ
れやすくなっている。
In general, electroless nickel plating generates hydrogen gas by a chemical reaction when nickel is deposited. In the case of the concave portion 21 having a small opening as described above, even if the electroless nickel plating solution is agitated or the substrate 10 is swung, the supply of the plating solution to the inner portion of the concave portion is performed. As shown in FIG. 3, the amount of hydrogen gas bubbles 70 that are stuck to the wall surface of the concave portion 21 or the surface of the conductor circuit 11 and do not move is easily formed.

【0010】そして、その水素ガスの泡70が付着した
部分は、無電解ニッケルメッキ液55の供給量が特に少
なくなって、一般にスキップと呼ばれるニッケルメッキ
皮膜の未形成部が生じてしまい、更にその表面に形成す
る金メッキ皮膜にも未形成部が生じ、得られるプリント
配線板の接続信頼性が低下する場合があるという問題が
あった。そのため、ニッケルメッキ皮膜の未形成部が生
じ難い、無電解ニッケルメッキの方法が望まれている。
The supply of the electroless nickel plating solution 55 becomes particularly small in the portion where the hydrogen gas bubbles 70 adhere, and an unformed portion of the nickel plating film generally called a skip is generated. The gold plating film formed on the surface also has an unformed portion, which causes a problem that the connection reliability of the obtained printed wiring board may be reduced. Therefore, a method of electroless nickel plating in which an unformed portion of the nickel plating film hardly occurs is desired.

【0011】[0011]

【発明が解決しようとする課題】本発明は、上記問題点
を改善するために成されたもので、その目的とするとこ
ろは、表面に導体回路を有する有機系基板の、その導体
回路を有する側の表面にレジスト皮膜を形成した後、無
電解ニッケルメッキ液に浸漬してニッケルメッキ皮膜を
形成する無電解ニッケルメッキ方法であって、ニッケル
メッキ皮膜の未形成部が生じ難い、無電解ニッケルメッ
キ方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an organic substrate having a conductor circuit on a surface thereof. This is an electroless nickel plating method in which a resist film is formed on the surface on the side and then immersed in an electroless nickel plating solution to form a nickel plating film. It is to provide a method.

【0012】[0012]

【課題を解決するための手段】本発明の請求項1に係る
無電解ニッケルメッキ方法は、表面に導体回路を有する
有機系基板の、その導体回路を有する側の表面にレジス
ト皮膜を形成した後、無電解ニッケルメッキ液に浸漬
し、無電解ニッケルメッキ液と接する導体回路の表面
に、ニッケルメッキ皮膜を形成する無電解ニッケルメッ
キ方法において、導体回路の表面にニッケルメッキ皮膜
を形成する方法が、導体回路を第一の無電解ニッケルメ
ッキ液に浸漬して、導体回路の表面に第一のニッケルメ
ッキ皮膜を形成した後、その第一の無電解ニッケルメッ
キ液よりニッケルの析出速度が速い第二の無電解ニッケ
ルメッキ液に浸漬して、第一のニッケルメッキ皮膜の表
面に第二のニッケルメッキ皮膜を形成する方法であるこ
とを特徴とする。
According to a first aspect of the present invention, there is provided an electroless nickel plating method comprising the steps of: forming a resist film on an organic substrate having a conductive circuit on the surface thereof; In an electroless nickel plating method of immersing in an electroless nickel plating solution and forming a nickel plating film on the surface of a conductor circuit in contact with the electroless nickel plating solution, a method of forming a nickel plating film on the surface of the conductor circuit includes: A conductor circuit is immersed in a first electroless nickel plating solution to form a first nickel plating film on the surface of the conductor circuit, and then a second nickel plating speed is higher than the first electroless nickel plating solution. Dipping in an electroless nickel plating solution to form a second nickel plating film on the surface of the first nickel plating film.

【0013】本発明の請求項2に係る無電解ニッケルメ
ッキ方法は、請求項1記載の無電解ニッケルメッキ方法
において、第二の無電解ニッケルメッキ液が、第一の無
電解ニッケルメッキ液より、温度が高い液であることを
特徴とする。
[0013] In the electroless nickel plating method according to the second aspect of the present invention, in the electroless nickel plating method according to the first aspect, the second electroless nickel plating solution may be formed from the first electroless nickel plating solution. It is characterized by a high temperature liquid.

【0014】本発明の請求項3に係る無電解ニッケルメ
ッキ方法は、請求項1記載の無電解ニッケルメッキ方法
において、第二の無電解ニッケルメッキ液が、第一の無
電解ニッケルメッキ液より、ニッケル化合物及び還元剤
の濃度が高い液であることを特徴とする。
According to a third aspect of the present invention, there is provided the electroless nickel plating method according to the first aspect, wherein the second electroless nickel plating solution is different from the first electroless nickel plating solution. The liquid is characterized by a high concentration of the nickel compound and the reducing agent.

【0015】本発明の請求項4に係る無電解ニッケルメ
ッキ方法は、請求項1から請求項3のいずれかに記載の
無電解ニッケルメッキ方法において、第一のニッケルメ
ッキ皮膜の厚みが、0.1〜2μmであることを特徴と
する。
According to a fourth aspect of the present invention, there is provided the electroless nickel plating method according to any one of the first to third aspects, wherein the first nickel plating film has a thickness of 0.1 mm. 1 to 2 μm.

【0016】本発明によると、ニッケルの析出速度が遅
い第一の無電解ニッケルメッキ液で予め導体回路の表面
に第一のニッケルメッキ皮膜を形成した後、その第一の
無電解ニッケルメッキ液よりニッケルの析出速度が速い
第二の無電解ニッケルメッキ液で第一のニッケルメッキ
皮膜の表面に第二のニッケルメッキ皮膜を形成するた
め、第一の無電解ニッケルメッキ液のニッケルの析出速
度を、水素ガスの泡が発生し難い程度の速度で行うと、
第一のニッケルメッキ皮膜は、ほぼ導体回路の表面全体
に形成され、第二の無電解ニッケルメッキ液中で水素ガ
スの泡が第一のニッケルメッキ皮膜の表面に付着した場
合であっても、ニッケルメッキ皮膜の最低厚さは確保で
き、ニッケルメッキ皮膜の未形成部が生じ難くなる。
According to the present invention, after a first nickel plating film is formed on a surface of a conductor circuit in advance with a first electroless nickel plating solution having a low nickel deposition rate, the first electroless nickel plating solution is applied. To form a second nickel plating film on the surface of the first nickel plating film with a second electroless nickel plating solution having a high nickel deposition rate, the nickel deposition rate of the first electroless nickel plating solution is If it is performed at such a speed that hydrogen gas bubbles are hardly generated,
The first nickel plating film is formed on almost the entire surface of the conductor circuit, and even when bubbles of hydrogen gas adhere to the surface of the first nickel plating film in the second electroless nickel plating solution, The minimum thickness of the nickel plating film can be ensured, and the unformed portion of the nickel plating film hardly occurs.

【0017】[0017]

【発明の実施の形態】本発明に係る無電解ニッケルメッ
キ方法を図面に基づいて説明する。図1は本発明に係る
無電解ニッケルメッキ方法の一実施の形態を説明する工
程図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An electroless nickel plating method according to the present invention will be described with reference to the drawings. FIG. 1 is a process diagram illustrating one embodiment of the electroless nickel plating method according to the present invention.

【0018】本発明に係る無電解ニッケルメッキ方法
は、表面に導体回路を有する有機系基板の、その導体回
路を有する側の表面にレジスト皮膜を形成した後、無電
解ニッケルメッキ液に浸漬し、無電解ニッケルメッキ液
と接する導体回路の表面に、ニッケルメッキ皮膜を形成
する無電解ニッケルメッキ方法である。
In the electroless nickel plating method according to the present invention, a resist film is formed on the surface of an organic substrate having a conductor circuit on the surface having the conductor circuit, and then dipped in an electroless nickel plating solution. This is an electroless nickel plating method in which a nickel plating film is formed on the surface of a conductor circuit that comes into contact with an electroless nickel plating solution.

【0019】そして、その製造に当たっては、図1
(a)に示すような、導体回路11を表面に有する基板
10を用いる。そして、その導体回路11を有する側
の、金メッキ皮膜の形成を予定しない部分の基板10表
面に、メッキ用レジスト皮膜20を形成する。
FIG. 1 shows the manufacturing process.
A substrate 10 having a conductor circuit 11 on the surface as shown in FIG. Then, a plating resist film 20 is formed on the surface of the substrate 10 where the gold plating film is not to be formed on the side having the conductor circuit 11.

【0020】本発明に用いる基板10は、導体回路11
を表面に有する有機系の板であり、熱硬化性樹脂組成物
のシートの片面又は両面に銅箔等の金属箔が張られてい
る板や、ガラス等の無機質繊維又はポリエステル、ポリ
アミド、木綿等の有機質繊維のクロス、ペーパー等の基
材を熱硬化性樹脂組成物で接着し、片面又は両面に銅箔
等の金属箔が張られている板等を用いて、表面の金属箔
をエッチングして導体回路11を形成したもの、及び、
金属箔が張られていない同様の板の表面に銅メッキ等の
金属メッキを行い、導体回路11を形成したもの等が挙
げられる。
The substrate 10 used in the present invention comprises a conductor circuit 11
An organic board having a surface on which a metal foil such as a copper foil is stretched on one or both sides of a sheet of the thermosetting resin composition, an inorganic fiber such as glass or polyester, polyamide, cotton, etc. Organic fiber cloth, a base material such as paper is adhered with a thermosetting resin composition, and a metal foil such as a copper foil is stretched on one or both sides, and the metal foil on the surface is etched. A conductor circuit 11 is formed, and
A metal plate such as copper plating is formed on the surface of a similar plate on which no metal foil is provided, and a conductor circuit 11 is formed.

【0021】この基板10の内部には、導体回路やその
壁面に金属皮膜を備える穴等を有していてもよい。な
お、上記熱硬化性樹脂組成物としては、例えば、エポキ
シ樹脂系、フェノール樹脂系、ポリイミド樹脂系、不飽
和ポリエステル樹脂系、ポリフェニレンエーテル樹脂系
等の熱硬化性樹脂や、これらの熱硬化性樹脂に無機充填
材等を配合した樹脂組成物等が挙げられる。また、導体
回路11を形成する金属としては、銅や、ステンレス等
が挙げられるが、電気的信頼性より、銅が好ましい。
The inside of the substrate 10 may have a conductor circuit or a hole provided with a metal film on the wall surface thereof. In addition, as the thermosetting resin composition, for example, a thermosetting resin such as an epoxy resin type, a phenol resin type, a polyimide resin type, an unsaturated polyester resin type, a polyphenylene ether resin type, and the like; And a resin composition in which an inorganic filler or the like is blended. Examples of the metal forming the conductor circuit 11 include copper and stainless steel, and copper is preferable from the viewpoint of electrical reliability.

【0022】本発明に用いるメッキ用レジスト皮膜20
は、UV光の照射や、加熱によってレジスト樹脂が硬化
し、無電解ニッケルメッキに耐える皮膜となるものであ
る。このメッキ用レジスト皮膜20を形成する方法とし
ては、印刷法等により、ニッケルメッキ皮膜の形成を予
定しない部分の基板10表面に、選択的に未硬化のレジ
スト樹脂を塗布した後、UV光の照射や、加熱によって
硬化させて形成する方法や、基板10の表面全体に未硬
化のレジスト樹脂を塗布又は熱圧着した後、ニッケルメ
ッキ皮膜の形成を予定しない部分のみUV光を照射して
硬化させ、次いでUV光を照射していない未硬化の部分
を除去して形成する方法等が挙げられる。
The plating resist film 20 used in the present invention
The resist is cured by UV light irradiation or heating to form a film that can withstand electroless nickel plating. As a method of forming the plating resist film 20, a non-cured resist resin is selectively applied to the surface of the substrate 10 where a nickel plating film is not to be formed by a printing method or the like, and then UV light irradiation is performed. Or, a method of forming by curing by heating, or applying an uncured resist resin on the entire surface of the substrate 10 or thermocompression bonding, and then irradiating only the portions where the nickel plating film is not to be formed with UV light and curing, Next, a method of forming by removing an uncured portion which has not been irradiated with UV light, or the like can be given.

【0023】なお、このメッキ用レジスト皮膜20は、
後工程で除去してプリント配線板完成時には残らないも
のであってもよく、一般にソルダーレジストと呼ばれる
ようなプリント配線板完成時に残るものであってもよ
い。このメッキ用レジスト皮膜20の厚みは、特に限定
するものではないが、一般に30〜200μm程度形成
する。
The plating resist film 20 is
It may be removed in a later step and not remain when the printed wiring board is completed, or may be left when the printed wiring board is completed as generally called a solder resist. The thickness of the plating resist film 20 is not particularly limited, but is generally about 30 to 200 μm.

【0024】次いで、必要に応じて、脱脂やソフトエッ
チング等を行って、ニッケルメッキ皮膜の形成を予定す
る導体回路11の表面を洗浄する。次いで、導体回路1
1の表面に、無電解ニッケルメッキ用の触媒を付与した
後、その触媒を活性化する。
Next, if necessary, the surface of the conductor circuit 11 on which the nickel plating film is to be formed is cleaned by performing degreasing, soft etching, or the like. Next, the conductor circuit 1
After applying a catalyst for electroless nickel plating to the surface of 1, the catalyst is activated.

【0025】次いで、図1(b)に示すように、導体回
路11を表面に有する基板10を、第一の無電解ニッケ
ルメッキ液35に浸漬して、導体回路11の表面に第一
のニッケルメッキ皮膜30を形成した後、図1(c)に
示すように、第二の無電解ニッケルメッキ液36に浸漬
して、第一のニッケルメッキ皮膜30の表面に第二のニ
ッケルメッキ皮膜31を形成する。
Next, as shown in FIG. 1B, the substrate 10 having the conductor circuit 11 on the surface is immersed in a first electroless nickel plating solution 35, and the first nickel After the plating film 30 is formed, as shown in FIG. 1C, the plating film 30 is immersed in a second electroless nickel plating solution 36 to coat the second nickel plating film 31 on the surface of the first nickel plating film 30. Form.

【0026】本発明に用いる第一の無電解ニッケルメッ
キ液35や第二の無電解ニッケルメッキ液36として
は、ニッケル化合物として硫酸ニッケルや塩化ニッケル
等を含有し、還元剤として次亜リン酸ナトリウムを含有
する酸性タイプの水溶液や、同様のニッケル化合物と、
還元剤として次亜リン酸ナトリウムや水素化ホウ素ナト
リウムを含有するアンモニアアルカリタイプの水溶液や
カセイアルカリタイプの水溶液等が挙げられる。
The first electroless nickel plating solution 35 and the second electroless nickel plating solution 36 used in the present invention contain nickel sulfate, nickel chloride or the like as a nickel compound, and sodium hypophosphite as a reducing agent. An acidic type aqueous solution containing, and a similar nickel compound,
Examples of the reducing agent include an ammonia-alkali type aqueous solution and a caustic alkali-type aqueous solution containing sodium hypophosphite and sodium borohydride.

【0027】なお、第二の無電解ニッケルメッキ液36
は、第一の無電解ニッケルメッキ液35より、ニッケル
の析出速度が速いことが重要である。第二の無電解ニッ
ケルメッキ液36のニッケルの析出速度が、第一の無電
解ニッケルメッキ液35のニッケルの析出速度と同じ、
又は遅い場合、第一の無電解ニッケルメッキ液35中で
水素ガスの泡が発生しやすくなり、その水素ガスの泡
が、導体回路11の表面等に付着して、ニッケルメッキ
皮膜(30,31)の未形成部が生じやすくなる、ある
いは、ニッケルメッキ皮膜(30,31)を形成する速
度が遅くなって、生産性が低下する場合がある。
The second electroless nickel plating solution 36
It is important that the deposition rate of nickel is higher than that of the first electroless nickel plating solution 35. The deposition rate of nickel of the second electroless nickel plating solution 36 is the same as the deposition speed of nickel of the first electroless nickel plating solution 35,
Or, in the case of a slow speed, bubbles of hydrogen gas are likely to be generated in the first electroless nickel plating solution 35, and the bubbles of hydrogen gas adhere to the surface of the conductor circuit 11 and the like, and the nickel plating film (30, 31) is formed. ) May easily occur, or the speed at which the nickel plating films (30, 31) are formed may be reduced, resulting in reduced productivity.

【0028】なお、第一の無電解ニッケルメッキ液35
のニッケルの析出速度は、水素ガスの泡が発生し難い程
度の、従来の1種類の無電解ニッケルメッキ液で行う場
合より遅い速度で行うようにする。また、第二の無電解
ニッケルメッキ液36のニッケルの析出速度は、第一の
無電解ニッケルメッキ液35より、ニッケルの析出速度
が速ければ特に限定するものではなく、従来の1種類の
無電解ニッケルメッキ液で行う場合と、ほぼ同じ程度の
速度や、それ以上の速度とすればよい。
The first electroless nickel plating solution 35
The nickel is deposited at a rate lower than that of a conventional electroless nickel plating solution, in which bubbles of hydrogen gas are hardly generated. Further, the deposition rate of nickel of the second electroless nickel plating solution 36 is not particularly limited as long as the deposition rate of nickel is higher than that of the first electroless nickel plating solution 35. The speed may be approximately the same as or higher than that in the case of using a nickel plating solution.

【0029】この第二の無電解ニッケルメッキ液36の
ニッケルの析出速度を、第一の無電解ニッケルメッキ液
35のニッケルの析出速度より早くする方法としては、
同じ組成の無電解ニッケルメッキ液を用いて、温度を変
更して析出速度を変更する方法や、組成を変更した同じ
温度の無電解ニッケルメッキ液を用いて、析出速度を変
更する方法や、組成及び温度を変更した無電解ニッケル
メッキ液を用いて、析出速度を変更する方法等が挙げら
れる。
As a method of making the deposition rate of nickel of the second electroless nickel plating solution 36 faster than the deposition rate of nickel of the first electroless nickel plating solution 35,
Using an electroless nickel plating solution of the same composition, a method of changing the deposition rate by changing the temperature, and a method of changing the deposition rate by using an electroless nickel plating solution of the same temperature with a changed composition, And a method of changing the deposition rate using an electroless nickel plating solution having a changed temperature.

【0030】なお、第一の無電解ニッケルメッキ液35
と第二の無電解ニッケルメッキ液36が、同じ組成の場
合、温度が高いとニッケルの析出速度が早いため、温度
を変更して析出速度を変更する場合には、第二の無電解
ニッケルメッキ液36を、第一の無電解ニッケルメッキ
液35より、温度の高い液とする。
The first electroless nickel plating solution 35
And the second electroless nickel plating solution 36 having the same composition, if the temperature is high, the deposition rate of nickel is high. The liquid 36 has a higher temperature than the first electroless nickel plating liquid 35.

【0031】また、第一の無電解ニッケルメッキ液35
と第二の無電解ニッケルメッキ液36が、同じ温度の場
合、含有するニッケル化合物及び還元剤の濃度が高いと
ニッケルの析出速度が早いため、組成を変更して析出速
度を変更する場合には、第二の無電解ニッケルメッキ液
36を、第一の無電解ニッケルメッキ液35より、ニッ
ケル化合物及び還元剤の濃度が高い液とする。
The first electroless nickel plating solution 35
When the second electroless nickel plating solution 36 is at the same temperature, if the concentration of the nickel compound and the reducing agent contained is high, the deposition rate of nickel is high. The second electroless nickel plating solution 36 has a higher concentration of a nickel compound and a reducing agent than the first electroless nickel plating solution 35.

【0032】なお、この組成を変更して析出速度を変更
する方法において、第一の無電解ニッケルメッキ液35
や第二の無電解ニッケルメッキ液36に、ニッケルの析
出速度に影響を及ぼす、ニッケル化合物及び還元剤以外
の化合物をも含有している場合には、それらの濃度も同
時に変更すると、ニッケルの析出速度が安定して好まし
いが、ニッケルの析出速度に影響を及ぼさない含有物に
ついては、変更しても良く、変更しなくても良い。な
お、ニッケル化合物及び還元剤以外の含有物の濃度を変
更することにより、ニッケルの析出速度を変更可能な場
合には、ニッケル化合物及び還元剤の濃度は変更せず
に、この析出速度に影響する含有物の濃度を変更して、
ニッケルの析出速度を変更しても良い。
In the method of changing the deposition rate by changing the composition, the first electroless nickel plating solution 35
And the second electroless nickel plating solution 36 also contains a compound other than a nickel compound and a reducing agent that affects the deposition rate of nickel, the concentration of which is changed at the same time, the nickel deposition Although the rate is stable and preferable, the content that does not affect the nickel deposition rate may or may not be changed. If the deposition rate of nickel can be changed by changing the concentration of the content other than the nickel compound and the reducing agent, the deposition rate is affected without changing the concentration of the nickel compound and the reducing agent. Change the concentration of the ingredients,
The deposition rate of nickel may be changed.

【0033】なお、形成する第一のニッケルメッキ皮膜
30の厚みは、0.1〜2μmであると好ましい。0.
1μm未満の場合、面内ばらつきによって第一のニッケ
ルメッキ皮膜30が形成されない部分が発生する場合が
あるため、第二の無電解ニッケルメッキ液36に浸漬し
たとき、その第一のニッケルメッキ皮膜30が形成され
ていない部分の表面に、水素ガスの泡が付着して第二の
ニッケルメッキ皮膜31も形成されず、ニッケルメッキ
皮膜(30,31)の未形成部が生じる場合がある。ま
た、2μmを越える厚み形成しても、ニッケルメッキ皮
膜(30,31)の未形成部を生じ難くする効果に差が
なく、経済的でない。
The thickness of the first nickel plating film 30 to be formed is preferably 0.1 to 2 μm. 0.
If the thickness is less than 1 μm, a portion where the first nickel plating film 30 is not formed may occur due to in-plane variation, so that when immersed in the second electroless nickel plating solution 36, the first nickel plating film 30 There is a case where hydrogen gas bubbles adhere to the surface of the part where no nickel plating film is formed, so that the second nickel plating film 31 is not formed, and an unformed portion of the nickel plating film (30, 31) is formed. Further, even if the thickness exceeds 2 μm, there is no difference in the effect of making it difficult to form the unformed portion of the nickel plating film (30, 31), which is not economical.

【0034】なお、第一の無電解ニッケルメッキ液に浸
漬して、導体回路の表面に第一のニッケルメッキ皮膜を
形成した後、第二の無電解ニッケルメッキ液に浸漬し
て、第一のニッケルメッキ皮膜の表面に第二のニッケル
メッキ皮膜を形成し、次いで、再度第一の無電解ニッケ
ルメッキ液に浸漬して、第二のニッケルメッキ皮膜の表
面に第三のニッケルメッキ皮膜を形成した後、再度第二
の無電解ニッケルメッキ液に浸漬して、第三のニッケル
メッキ皮膜の表面に第四のニッケルメッキ皮膜を形成す
る場合のように、第一の無電解ニッケルメッキ液への浸
漬及び第二の無電解ニッケルメッキ液への浸漬を1サイ
クルとして、そのサイクルを複数回繰り返すと、合計時
間が同じになるように浸漬した場合(例えば、20分及
び40分の1サイクルと、10分及び20分の2サイク
ル)であっても、特にニッケルメッキ皮膜の未形成部が
生じ難くなり好ましい。
After immersion in the first electroless nickel plating solution to form a first nickel plating film on the surface of the conductor circuit, immersion in the second electroless nickel plating solution, A second nickel plating film was formed on the surface of the nickel plating film, and then immersed again in the first electroless nickel plating solution to form a third nickel plating film on the surface of the second nickel plating film. After that, it is immersed again in the second electroless nickel plating solution, and immersed in the first electroless nickel plating solution as in the case of forming the fourth nickel plating film on the surface of the third nickel plating film. When the immersion in the second electroless nickel plating solution is defined as one cycle and the cycle is repeated a plurality of times, the immersion is performed so that the total time becomes the same (for example, 1/20 cycle and 1/40 cycle). If, even in 2 cycles) 10 minutes and 20 minutes, preferably it particularly hard to occur is not formed part of the nickel plating film.

【0035】[0035]

【実施例】【Example】

(実施例1〜9)銅箔厚さ35μm、絶縁部の厚さ1.
2mmのエポキシ樹脂両面銅張り積層板[松下電工株式
会社製、品名 R1766]を用いて、表面の銅箔をエ
ッチングして、一方の面に直径が140μmのランド状
導体回路を3000個有する基板を形成した。次いでこ
の基板の、上記ランド状導体回路を形成した面に、アル
カリ現像型の液状レジスト[タムラ化研株式会社製]を
カーテンコート法により塗布した後、乾燥して、その面
全面に未硬化のメッキ用レジスト皮膜を形成した。
(Examples 1 to 9) Copper foil thickness 35 μm, thickness of insulating portion 1.
Using a 2 mm epoxy resin double-sided copper-clad laminate [product name: R1766, manufactured by Matsushita Electric Works Co., Ltd.], the copper foil on the surface is etched to form a substrate having 3000 land-like conductor circuits having a diameter of 140 μm on one surface. Formed. Next, an alkali-developable liquid resist (manufactured by Tamura Kaken Co., Ltd.) is applied to the surface of the substrate on which the land-shaped conductor circuits are formed by a curtain coating method, and then dried, and the entire surface of the surface is uncured. A resist film for plating was formed.

【0036】次いで、上記ランド状導体回路を形成した
部分とその周囲とを除く部分にUV光を照射して硬化さ
せ、次いで未硬化部を現像して、その底面に上記ランド
状導体回路が露出している、メッキ用レジスト皮膜等で
形成された、直径180μmの凹部を、それぞれのラン
ド状導体回路の部分に形成した。
Next, the portion excluding the portion where the land-shaped conductor circuit is formed and its surroundings is irradiated with UV light to be cured, then the uncured portion is developed, and the land-shaped conductor circuit is exposed on the bottom surface. A 180 μm diameter concave portion formed of a plating resist film or the like was formed in each of the land-shaped conductor circuits.

【0037】次いで、ニッケルメッキの前処理として、
下記の方法で、脱脂、ソフトエッチング、酸洗浄、プリ
ディップ、触媒付与及び触媒活性化を行った。脱脂は、
室温のアトテック社製脱脂液[商品名 酸性クリーナ
ー]を用いて5分行い、ソフトエッチングは、室温のワ
ールドメタル社製ソフトエッチング液を用いて30秒行
い、酸洗浄は、98%硫酸[試薬]を1体積%含有する
室温の水溶液を用いて3分行い、プリディップは、35
%塩酸[試薬]を10体積%含有する室温の水溶液を用
いて30秒行い、触媒付与は、60℃のワールドメタル
社製無電解ニッケルメッキ用触媒[商品名AT-90]
を用いて2分行い、触媒活性化は、98%硫酸[試薬]
を1体積%含有する室温の水溶液を用いて1分行った。
Next, as a pretreatment for nickel plating,
Degreasing, soft etching, acid washing, pre-dipping, catalyst application and catalyst activation were performed by the following methods. For degreasing,
Performed at room temperature for 5 minutes using Atotech degreasing solution [trade name: acidic cleaner], soft etching was performed for 30 seconds using a room temperature World Metal soft etching solution, and acid cleaning was performed using 98% sulfuric acid [reagent]. For 3 minutes using an aqueous solution at room temperature containing 1% by volume of
% Aqueous hydrochloric acid [reagent] is used for 30 seconds using an aqueous solution containing 10% by volume of room temperature, and the catalyst is applied at 60 ° C., a catalyst for electroless nickel plating [trade name AT-90, manufactured by World Metal Corporation].
The catalyst is activated by 98% sulfuric acid [reagent].
For 1 minute using an aqueous solution at room temperature containing 1% by volume.

【0038】次いで、表1に示す温度の第一の無電解ニ
ッケルメッキ液に20分浸漬して、導体回路の表面に第
一のニッケルメッキ皮膜を形成した。第一の無電解ニッ
ケルメッキ液は、ワールドメタル社製無電解ニッケルメ
ッキ液[商品名リンデン202-0]を20体積%含有
する水溶液を標準濃度とし、その標準濃度、標準濃度の
1/2、標準濃度の1/3及び標準濃度の1/5の組成
で建浴した液を、表1に示す実施例に用いた。
Next, the substrate was immersed in the first electroless nickel plating solution at the temperature shown in Table 1 for 20 minutes to form a first nickel plating film on the surface of the conductor circuit. The first electroless nickel plating solution has a standard concentration of an aqueous solution containing 20% by volume of an electroless nickel plating solution [trade name: Linden 202-0] manufactured by World Metal Co., and its standard concentration, 1/2 of the standard concentration, Liquids bathed at a composition of 1/3 of the standard concentration and 1/5 of the standard concentration were used in Examples shown in Table 1.

【0039】次いで、上記標準濃度の組成で建浴した8
0℃の第二の無電解ニッケルメッキ液に40分浸漬し
て、第一のニッケルメッキ皮膜の表面に第二のニッケル
メッキ皮膜を形成することにより、導体回路の表面に、
ニッケルメッキ皮膜(第一及び第二の合計)を形成し
た。
Next, a bath was prepared with the composition having the above standard concentration.
By immersing in a second electroless nickel plating solution at 0 ° C. for 40 minutes to form a second nickel plating film on the surface of the first nickel plating film,
A nickel plating film (first and second total) was formed.

【0040】形成した第一のニッケルメッキ皮膜の厚み
を、断面観察により電子顕微鏡で測定したところ、表1
に示した厚みであった。なお、第一の無電解ニッケルメ
ッキ液の代わりに、上記80℃の第二の無電解ニッケル
メッキ液を用いて、同様に20分浸漬して、導体回路の
表面にニッケルメッキ皮膜を形成した後、そのニッケル
メッキ皮膜の厚みを同様に測定したところ2.2μmで
あり、各実施例は共に、第二の無電解ニッケルメッキ液
のニッケルの析出速度が、第一の無電解ニッケルメッキ
液のニッケルの析出速度と比べて、速いことが確認され
た。
The thickness of the formed first nickel plating film was measured with an electron microscope by observing a cross section.
The thickness was as shown in FIG. In addition, instead of the first electroless nickel plating solution, the above-mentioned second electroless nickel plating solution at 80 ° C. was immersed for 20 minutes to form a nickel plating film on the surface of the conductor circuit. When the thickness of the nickel plating film was measured in the same manner, it was 2.2 μm. In each of the examples, the deposition rate of nickel of the second electroless nickel plating solution was less than that of the first electroless nickel plating solution. It was confirmed that the deposition rate was higher than the deposition rate.

【0041】[0041]

【表1】 [Table 1]

【0042】(実施例10)第一の無電解ニッケルメッ
キ液に10分浸漬して、導体回路の表面に第一のニッケ
ルメッキ皮膜を形成した後、第二の無電解ニッケルメッ
キ液に20分浸漬して、第一のニッケルメッキ皮膜の表
面に第二のニッケルメッキ皮膜を形成し、次いで、再度
第一の無電解ニッケルメッキ液に10分浸漬して、第二
のニッケルメッキ皮膜の表面に第三のニッケルメッキ皮
膜を形成した後、再度第二の無電解ニッケルメッキ液に
20分浸漬して、第三のニッケルメッキ皮膜の表面に第
四のニッケルメッキ皮膜を形成したこと以外は実施例1
と同様にして、導体回路の表面に、ニッケルメッキ皮膜
(第一〜第四)を形成した。
Example 10 After immersion in a first electroless nickel plating solution for 10 minutes to form a first nickel plating film on the surface of a conductor circuit, the substrate was immersed in a second electroless nickel plating solution for 20 minutes. Immersion to form a second nickel plating film on the surface of the first nickel plating film, and then immersing again in the first electroless nickel plating solution for 10 minutes, Example 2 except that after forming the third nickel plating film, it was immersed again in the second electroless nickel plating solution for 20 minutes to form the fourth nickel plating film on the surface of the third nickel plating film. 1
Similarly, a nickel plating film (first to fourth) was formed on the surface of the conductor circuit.

【0043】(実施例11)第一の無電解ニッケルメッ
キ液に10分浸漬して、導体回路の表面に第一のニッケ
ルメッキ皮膜を形成した後、第二の無電解ニッケルメッ
キ液に20分浸漬して、第一のニッケルメッキ皮膜の表
面に第二のニッケルメッキ皮膜を形成し、次いで、再度
第一の無電解ニッケルメッキ液に10分浸漬して、第二
のニッケルメッキ皮膜の表面に第三のニッケルメッキ皮
膜を形成した後、再度第二の無電解ニッケルメッキ液に
20分浸漬して、第三のニッケルメッキ皮膜の表面に第
四のニッケルメッキ皮膜を形成したこと以外は実施例6
と同様にして、導体回路の表面に、ニッケルメッキ皮膜
(第一〜第四)を形成した。
Example 11 After immersion in a first electroless nickel plating solution for 10 minutes to form a first nickel plating film on the surface of a conductor circuit, the substrate was immersed in a second electroless nickel plating solution for 20 minutes. Immersion to form a second nickel plating film on the surface of the first nickel plating film, and then immersing again in the first electroless nickel plating solution for 10 minutes, Example 2 except that after forming the third nickel plating film, it was immersed again in the second electroless nickel plating solution for 20 minutes to form the fourth nickel plating film on the surface of the third nickel plating film. 6
Similarly, a nickel plating film (first to fourth) was formed on the surface of the conductor circuit.

【0044】(比較例)第一の無電解ニッケルメッキ液
に浸漬せずに、上記80℃の第二の無電解ニッケルメッ
キ液に60分浸漬して、導体回路の表面に第二のニッケ
ルメッキ皮膜を直接形成したこと以外は、実施例1と同
様にして、導体回路の表面に、ニッケルメッキ皮膜(第
二のみ)を形成した。
Comparative Example Without immersion in the first electroless nickel plating solution, immersion in the second electroless nickel plating solution at 80 ° C. for 60 minutes to form a second nickel plating on the surface of the conductor circuit A nickel plating film (second only) was formed on the surface of the conductor circuit in the same manner as in Example 1 except that the film was formed directly.

【0045】(評価、結果)各実施例及び比較例で得ら
れたニッケルメッキ皮膜の付き回り性を評価した。その
方法は、80℃のワールドメタル社製置換無電解金メッ
キ液[商品名MN−AUA]に3分浸漬した後、80℃
のワールドメタル社製厚付け無電解金めっき[商品名G
OLD−8]に10分浸漬して、ニッケルメッキ皮膜の
表面に金メッキ皮膜を形成した後、それぞれ3000個
のランド状導体回路を顕微鏡で観察し、均一に金メッキ
が形成されているものを合格、形成されてない場合を不
合格とし、合格の個数を数えた。
(Evaluation and Results) The throwing power of the nickel plating films obtained in each of Examples and Comparative Examples was evaluated. The method is as follows. After immersing in a replacement metal electroless gold plating solution [trade name: MN-AUA] manufactured by World Metal Co.
World Metal Co. thick electroless gold plating [Product name G
OLD-8] for 10 minutes to form a gold-plated film on the surface of the nickel-plated film. Observe the 3000 land-shaped conductor circuits with a microscope. The case where it was not formed was rejected, and the number of passed samples was counted.

【0046】その結果は、表1に示したように、各実施
例は、比較例と比べて金メッキが形成されている比率が
高く、ニッケルメッキ皮膜の未形成部が生じ難いことが
確認された。また、第一のニッケルメッキ皮膜の厚み
が、0.1〜2μmの範囲内である実施例2〜5及び実
施例7〜9は、実施例1,6と比べて、特にニッケルメ
ッキ皮膜の未形成部が生じ難いことが確認された。ま
た、第一の無電解ニッケルメッキ液への浸漬及び第二の
無電解ニッケルメッキ液への浸漬のサイクルを2回繰り
返した実施例10,11は、実施例1〜9と比べて、特
にニッケルメッキ皮膜の未形成部が生じ難いことが確認
された。
As a result, as shown in Table 1, it was confirmed that in each of the examples, the ratio of the gold plating was higher than that of the comparative example, and the unformed portion of the nickel plating film was hardly generated. . Further, in Examples 2 to 5 and 7 to 9 in which the thickness of the first nickel plating film was in the range of 0.1 to 2 μm, the thickness of the nickel plating film was particularly small compared to Examples 1 and 6. It was confirmed that a formed portion was hardly generated. Examples 10 and 11 in which the cycle of immersion in the first electroless nickel plating solution and the cycle of immersion in the second electroless nickel plating solution were repeated twice were particularly advantageous in comparison with Examples 1 to 9, It was confirmed that an unformed portion of the plating film was hardly generated.

【0047】[0047]

【発明の効果】本発明に係る無電解ニッケルメッキ方法
によると、第一の無電解ニッケルメッキ液に浸漬して、
導体回路の表面に第一のニッケルメッキ皮膜を形成した
後、その第一の無電解ニッケルメッキ液よりニッケルの
析出速度が速い第二の無電解ニッケルメッキ液に浸漬し
て、第一のニッケルメッキ皮膜の表面に第二のニッケル
メッキ皮膜を形成するため、ニッケルメッキ皮膜の未形
成部が生じ難くなる。
According to the electroless nickel plating method of the present invention, immersion in the first electroless nickel plating solution
After the first nickel plating film is formed on the surface of the conductor circuit, the first nickel plating solution is immersed in a second electroless nickel plating solution having a higher nickel deposition rate than the first electroless nickel plating solution. Since the second nickel plating film is formed on the surface of the film, an unformed portion of the nickel plating film hardly occurs.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る無電解ニッケルメッキ方法の一実
施の形態を説明する工程図である。
FIG. 1 is a process diagram illustrating an embodiment of an electroless nickel plating method according to the present invention.

【図2】従来の無電解ニッケルメッキ方法を説明する工
程図である。
FIG. 2 is a process diagram illustrating a conventional electroless nickel plating method.

【図3】従来の無電解ニッケルメッキ方法の工程の一部
を説明する図である。
FIG. 3 is a diagram illustrating a part of the steps of a conventional electroless nickel plating method.

【符号の説明】[Explanation of symbols]

10 基板 11 導体回路 12 銅箔層 20 メッキ用レジスト皮膜 21 凹部 25 エッチング用レジスト皮膜 30 第一のニッケルメッキ皮膜 31 第二のニッケルメッキ皮膜 35 第一の無電解ニッケルメッキ液 36 第二の無電解ニッケルメッキ液 50 ニッケルメッキ皮膜 55 無電解ニッケルメッキ液 60 金メッキ皮膜 70 水素ガスの泡 DESCRIPTION OF SYMBOLS 10 Substrate 11 Conductor circuit 12 Copper foil layer 20 Plating resist film 21 Concave part 25 Etching resist film 30 First nickel plating film 31 Second nickel plating film 35 First electroless nickel plating solution 36 Second electroless Nickel plating solution 50 Nickel plating film 55 Electroless nickel plating solution 60 Gold plating film 70 Hydrogen gas bubble

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤森 正一 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 平田 勲夫 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 藤原 弘明 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 小川 悟 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 前田 修二 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 中川 義廣 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 石原 政行 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shoichi Fujimori 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. (72) Inventor Hiroaki Fujiwara 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture, Japan Inside Matsushita Electric Works Co., Ltd. Matsushita Electric Works Co., Ltd., 1048, Kazuma, Kadoma-shi (72) Inventor Yoshihiro Nakagawa 1048 Kadoma, Kazuma, Kadoma, Osaka, Japan Within Denko Corporation

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 表面に導体回路を有する有機系基板の、
その導体回路を有する側の表面にレジスト皮膜を形成し
た後、無電解ニッケルメッキ液に浸漬し、無電解ニッケ
ルメッキ液と接する導体回路の表面に、ニッケルメッキ
皮膜を形成する無電解ニッケルメッキ方法において、導
体回路の表面にニッケルメッキ皮膜を形成する方法が、
導体回路を第一の無電解ニッケルメッキ液に浸漬して、
導体回路の表面に第一のニッケルメッキ皮膜を形成した
後、その第一の無電解ニッケルメッキ液よりニッケルの
析出速度が速い第二の無電解ニッケルメッキ液に浸漬し
て、第一のニッケルメッキ皮膜の表面に第二のニッケル
メッキ皮膜を形成する方法であることを特徴とする無電
解ニッケルメッキ方法。
1. An organic substrate having a conductive circuit on its surface,
After forming a resist film on the surface having the conductor circuit, immersed in an electroless nickel plating solution, the electroless nickel plating method of forming a nickel plating film on the surface of the conductor circuit in contact with the electroless nickel plating solution. , A method of forming a nickel plating film on the surface of a conductor circuit,
Immerse the conductor circuit in the first electroless nickel plating solution,
After the first nickel plating film is formed on the surface of the conductor circuit, the first nickel plating solution is immersed in a second electroless nickel plating solution having a higher nickel deposition rate than the first electroless nickel plating solution. An electroless nickel plating method, which comprises forming a second nickel plating film on the surface of the film.
【請求項2】 第二の無電解ニッケルメッキ液が、第一
の無電解ニッケルメッキ液より、温度が高い液であるこ
とを特徴とする請求項1記載の無電解ニッケルメッキ方
法。
2. The electroless nickel plating method according to claim 1, wherein the second electroless nickel plating solution has a higher temperature than the first electroless nickel plating solution.
【請求項3】 第二の無電解ニッケルメッキ液が、第一
の無電解ニッケルメッキ液より、ニッケル化合物及び還
元剤の濃度が高い液であることを特徴とする請求項1記
載の無電解ニッケルメッキ方法。
3. The electroless nickel according to claim 1, wherein the second electroless nickel plating solution has a higher concentration of a nickel compound and a reducing agent than the first electroless nickel plating solution. Plating method.
【請求項4】 第一のニッケルメッキ皮膜の厚みが、
0.1〜2μmであることを特徴とする請求項1から請
求項3のいずれかに記載の無電解ニッケルメッキ方法。
4. The thickness of the first nickel plating film is:
The electroless nickel plating method according to claim 1, wherein the thickness is 0.1 to 2 μm.
JP10502197A 1997-04-22 1997-04-22 Electroless nickel plating method Pending JPH10298771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10502197A JPH10298771A (en) 1997-04-22 1997-04-22 Electroless nickel plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10502197A JPH10298771A (en) 1997-04-22 1997-04-22 Electroless nickel plating method

Publications (1)

Publication Number Publication Date
JPH10298771A true JPH10298771A (en) 1998-11-10

Family

ID=14396412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10502197A Pending JPH10298771A (en) 1997-04-22 1997-04-22 Electroless nickel plating method

Country Status (1)

Country Link
JP (1) JPH10298771A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004031447A1 (en) * 2002-10-07 2004-04-15 Tokyo Electron Limited Method of electroless plating
CN107635356A (en) * 2017-09-26 2018-01-26 深圳市迅捷兴科技股份有限公司 Circuit board side wall gold filled nickel-gold electroplating process
CN110430688A (en) * 2019-08-06 2019-11-08 梅州智科电路板有限公司 A kind of low cost insulating properties printed circuit board craft of gilding
CN111354626A (en) * 2018-12-21 2020-06-30 瑞萨电子株式会社 Semiconductor device and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004031447A1 (en) * 2002-10-07 2004-04-15 Tokyo Electron Limited Method of electroless plating
CN107635356A (en) * 2017-09-26 2018-01-26 深圳市迅捷兴科技股份有限公司 Circuit board side wall gold filled nickel-gold electroplating process
CN111354626A (en) * 2018-12-21 2020-06-30 瑞萨电子株式会社 Semiconductor device and method of manufacturing the same
CN111354626B (en) * 2018-12-21 2023-09-01 瑞萨电子株式会社 Semiconductor device and manufacturing method thereof
CN110430688A (en) * 2019-08-06 2019-11-08 梅州智科电路板有限公司 A kind of low cost insulating properties printed circuit board craft of gilding

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