JPH11307937A - Core board, its manufacturing method, and multi-layer printed circuit board - Google Patents
Core board, its manufacturing method, and multi-layer printed circuit boardInfo
- Publication number
- JPH11307937A JPH11307937A JP10124206A JP12420698A JPH11307937A JP H11307937 A JPH11307937 A JP H11307937A JP 10124206 A JP10124206 A JP 10124206A JP 12420698 A JP12420698 A JP 12420698A JP H11307937 A JPH11307937 A JP H11307937A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- core substrate
- conductive
- opening
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 59
- 239000011347 resin Substances 0.000 claims abstract description 59
- 238000007747 plating Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 77
- 239000010410 layer Substances 0.000 claims description 57
- 239000004020 conductor Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 26
- 239000011229 interlayer Substances 0.000 claims description 17
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 229920005992 thermoplastic resin Polymers 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000007772 electroless plating Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical group [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- JUWOETZNAMLKMG-UHFFFAOYSA-N [P].[Ni].[Cu] Chemical compound [P].[Ni].[Cu] JUWOETZNAMLKMG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、層間樹脂絶縁層
とバイアホール及び導体回路とを交互に積層してなる多
層プリント配線板用のコア基板、該コア基板の製造方
法、及び、当該コア基板を用いる多層プリント配線板に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a core substrate for a multilayer printed wiring board in which interlayer resin insulating layers, via holes and conductive circuits are alternately laminated, a method of manufacturing the core substrate, and the core substrate. The present invention relates to a multilayer printed wiring board using the same.
【0002】[0002]
【従来の技術】ビルドアップ式の多層プリント配線板で
は、コア基板の両面に層間樹脂絶縁層を導体層とを交互
に積層している。ここで、コア基板としては、ガラス繊
維に樹脂を含浸させてたプリプレグを複数枚積層した樹
脂基板を用いている。コア基板に設けられる上下層の接
続用のスルーホールは、該樹脂基板にドリルで通孔を穿
設し、該通孔内にめっき膜を析出させることにより形成
されている。2. Description of the Related Art In a build-up type multilayer printed wiring board, interlayer resin insulating layers and conductor layers are alternately laminated on both surfaces of a core substrate. Here, as the core substrate, a resin substrate obtained by laminating a plurality of prepregs obtained by impregnating a glass fiber with a resin is used. Through holes for connection between the upper and lower layers provided on the core substrate are formed by drilling through holes in the resin substrate with a drill, and depositing a plating film in the through holes.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、従来技
術のコア基板では、0.3mm径以下のスルーホールを形
成することができなかった。即ち、ドリルでは、0.3
mm以下の通孔を穿設することが困難であるため、これが
スルーホールを直径を決定し、コア基板のファインピッ
チ化を阻む原因となっていた。However, in the core substrate of the prior art, a through hole having a diameter of 0.3 mm or less could not be formed. That is, in the drill, 0.3
Since it is difficult to form a through hole having a diameter of less than mm, this determines the diameter of the through hole, which is an obstacle to the fine pitch of the core substrate.
【0004】本発明は、上述した課題を解決するために
なされたものであり、その目的とするところは、微細な
ピッチで上下の接続を取り得るコア基板、コア基板の製
造方法、及び、多層プリント配線板を提供することにあ
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a core substrate capable of taking up and down connections at a fine pitch, a method of manufacturing a core substrate, and a multilayer substrate. It is to provide a printed wiring board.
【0005】[0005]
【課題を解決するための手段】請求項1のコア基板は、
上記目的を達成するため、導体柱を樹脂で固定してなる
ことを技術的特徴とする。According to the first aspect of the present invention, a core substrate is provided.
In order to achieve the above object, a technical feature is that the conductor pillar is fixed with a resin.
【0006】請求項2のコア基板は、請求項1におい
て、前記導電柱の径は、0.25mm以下で0.05mm以
上であることを技術的特徴とする。The technical feature of the core substrate according to claim 2 is that the diameter of the conductive pillar is 0.25 mm or less and 0.05 mm or more.
【0007】請求項3のコア基板は、請求項1又は2に
おいて、前記樹脂は、熱可塑性樹脂であることを技術的
特徴とする。A third aspect of the present invention is the core substrate according to the first or second aspect, wherein the resin is a thermoplastic resin.
【0008】また、請求項4のコア基板の製造方法は、
以下の(a)〜(d)の工程を含むことを技術的特徴と
する。 (a)導電体の上に開口を有するレジストを形成する工
程、(b)前記開口にめっきを施し導電柱を形成する工
程、(c)前記レジストを除去する工程、(d)前記導
電柱間に樹脂を充填する工程。[0008] The method of manufacturing a core substrate according to claim 4 is characterized in that:
Technical features include the following steps (a) to (d). (A) forming a resist having an opening on a conductor, (b) forming a conductive column by plating the opening, (c) removing the resist, and (d) between the conductive columns. The step of filling the resin.
【0009】また、請求項5のコア基板の製造方法は、
以下の(a)〜(e)の工程を含むことを技術的特徴と
する。 (a)導電体の上に開口を有するレジストを形成する工
程、(b)前記開口にめっきを施し導電柱を形成する工
程、(c)前記レジストを除去する工程、(d)前記導
電柱間に樹脂を充填する工程。(e)前記充填した樹脂
の上部を研磨して前記導電柱を露出させる工程。Further, a method of manufacturing a core substrate according to claim 5 is
Technical features include the following steps (a) to (e). (A) forming a resist having an opening on a conductor, (b) forming a conductive column by plating the opening, (c) removing the resist, and (d) between the conductive columns. The step of filling the resin. (E) polishing the upper portion of the filled resin to expose the conductive columns.
【0010】また、請求項6のコア基板の製造方法は、
請求項4又は5において、前記めっきにより導電柱を形
成する工程において、前記導電柱を電解めっきにより形
成することを技術的特徴とする。[0010] The method for manufacturing a core substrate according to claim 6 is characterized in that:
According to a fourth aspect of the present invention, in the step of forming the conductive pillar by the plating, the conductive pillar is formed by electrolytic plating.
【0011】請求項7は、コア基板に、層間樹脂絶縁層
とバイアホール及び導体回路とを交互に積層してなる多
層プリント配線板であって、前記コア基板が導体柱を樹
脂で固定してなり、前記コア基板の前記導電柱の直上に
前記バイアホールが形成されていることを技術的特徴と
する。A seventh aspect of the present invention is a multilayer printed wiring board in which interlayer resin insulating layers, via holes, and conductive circuits are alternately laminated on a core substrate, wherein the core substrate has conductive pillars fixed with resin. A technical feature is that the via hole is formed immediately above the conductive pillar of the core substrate.
【0012】請求項1のコア基板は、スルーホールとし
ての機能を有する導体柱を樹脂で固定してなり、ドリル
により通孔を穿設してスルーホールを形成する必要がな
いため、導電柱を用いることで微細なピッチで上下の接
続を取ることができる。According to the first aspect of the present invention, the conductive pillar having a function as a through hole is fixed with resin, and it is not necessary to form a through hole by drilling a through hole. By using it, the upper and lower connections can be made at a fine pitch.
【0013】請求項2のコア基板の導電柱の径は、0.
25mm以下である。ここで、0.25mmを越える場合
は、ドリルによりスルーホールを形成することが可能で
ある。他方、導電柱の径は、0.05mm以上である。こ
れは、コア基板の厚み(例えば、0.3mm)の分の高さ
の導電柱を、レジストの開口内に形成する際に、開口の
径が0.05mm以下であると、めっき液の回り込みが悪
く導電柱の形成が困難なためである。According to a second aspect of the present invention, the diameter of the conductive pillar of the core substrate is set to 0.1.
It is 25 mm or less. Here, when it exceeds 0.25 mm, a through hole can be formed by a drill. On the other hand, the diameter of the conductive pillar is 0.05 mm or more. This is because when a conductive pillar having a height corresponding to the thickness of the core substrate (for example, 0.3 mm) is formed in the opening of the resist, if the diameter of the opening is 0.05 mm or less, the plating solution flows around. This is because it is difficult to form conductive columns.
【0014】請求項3のコア基板では、導体柱を固定す
る樹脂が、熱可塑性であるため、誘電率等の電気特性が
良好であり、高周波用の多層プリント配線板に用いるこ
とが可能となる。According to the third aspect of the present invention, the resin for fixing the conductor pillars is thermoplastic, and therefore has good electrical characteristics such as a dielectric constant, and can be used for a high-frequency multilayer printed wiring board. .
【0015】請求項4のコア基板の製造方法では、開口
を有するレジストを形成し、開口にめっきを施しスルー
ホールとして機能する導電柱を形成し、導電柱を樹脂で
固めてコア基板を形成する。ここで、レジストに設ける
開口は、スルーホール形成の際に用いるドリルによる通
孔よりも小径に形成できるため、該小径の開口内に形成
した導電柱を用いることで、微細なピッチで上下の接続
を取ることができる。In the method of manufacturing a core substrate according to a fourth aspect of the present invention, a resist having an opening is formed, and the opening is plated to form conductive pillars functioning as through holes, and the conductive pillars are solidified with resin to form a core substrate. . Here, the opening provided in the resist can be formed to have a smaller diameter than a through hole formed by a drill used in forming a through hole. Therefore, by using a conductive column formed in the small-diameter opening, the upper and lower connections can be formed at a fine pitch. Can take.
【0016】請求項5のコア基板の製造方法では、開口
を有するレジストを形成し、開口にめっきを施しスルー
ホールとして機能する導電柱を形成し、導電柱を樹脂で
固めてコア基板を形成する。ここで、レジストに設ける
開口は、スルーホール形成の際に用いるドリルによる通
孔よりも小径に形成できるため、該小径の開口内に形成
した導電柱を用いることで、微細なピッチで上下の接続
を取ることができる。また、充填した樹脂の上部を研磨
して導電柱を露出させるため、上層と導電柱との接続を
確実に取ることができる。According to a fifth aspect of the present invention, a resist having an opening is formed, a plating is performed on the opening to form a conductive column functioning as a through hole, and the conductive column is solidified with a resin to form a core substrate. . Here, the opening provided in the resist can be formed to have a smaller diameter than a through hole formed by a drill used in forming a through hole. Therefore, by using a conductive column formed in the small-diameter opening, the upper and lower connections can be formed at a fine pitch. Can take. Further, since the upper portion of the filled resin is polished to expose the conductive columns, the connection between the upper layer and the conductive columns can be reliably established.
【0017】請求項6のコア基板の製造方法では、導電
柱を電解めっきにより形成するため、廉価かつ迅速に形
成することができる。In the method of manufacturing a core substrate according to the sixth aspect, since the conductive columns are formed by electrolytic plating, they can be formed inexpensively and quickly.
【0018】請求項7の多層プリント配線板では、コア
基板が導体柱を樹脂で固定してなり、ドリルにより通孔
を穿設してスルーホールを形成する必要がないため、微
細なピッチで上下の接続を取ることができる。ここで、
導電柱により微細なピッチで上下の接続をとっても、コ
ア基板上にバイアホールとの接続用のパッドを形成して
は、該パッドを設けることで導電柱を微細なピッチで設
けられなくなる。このため、請求項7の構成では、コア
基板の導電柱の直上にバイアホールを形成することで、
パッドをなくし、微細なピッチで上下の接続を取ること
を可能にする。In the multilayer printed wiring board according to the present invention, the core substrate is formed by fixing the conductor pillars with resin, and it is not necessary to form a through hole by drilling a through hole. Can take a connection. here,
Even if the upper and lower connections are made at a fine pitch by the conductive pillars, the pads for connecting to the via holes are formed on the core substrate, and by providing the pads, the conductive pillars cannot be provided at a fine pitch. For this reason, in the configuration of claim 7, the via hole is formed directly above the conductive pillar of the core substrate,
Eliminates pads and allows up and down connections with fine pitch.
【0019】[0019]
【発明の実施の形態】以下、本発明の実施形態に係る多
層プリント配線板及び該多層プリント配線板に用いるコ
ア基板について図を参照して説明する。図2(F)は1
実施態様に係るコア基板の断面を示している。コア基板
30は、円柱条の導電柱14を樹脂16により固定して
なる。該導電柱14は、従来技術のコア基板のスルーホ
ールの機能を果たす。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A multilayer printed wiring board according to an embodiment of the present invention and a core substrate used for the multilayer printed wiring board will be described below with reference to the drawings. FIG.
2 shows a cross section of a core substrate according to an embodiment. The core substrate 30 is formed by fixing cylindrical conductive pillars 14 with a resin 16. The conductive pillars 14 function as through holes in a prior art core substrate.
【0020】コア基板30は、厚さ0.3mmに形成され
ている。そして、導電柱14は、直径0.1mmに形成さ
れている。ここで、該導電柱14は、0.25mm以下で
0.05mm以上であることが望ましい。これは、0.2
5mmを越える場合は、従来技術のようにドリルによりス
ルーホールを形成することが可能であるからである。他
方、導電柱の径は、0.05mm以上であることが望まし
い。これは、コア基板の厚み(0.3mm)の分の高さの
導電柱を、後述するようにレジストの開口内に形成する
際に、開口径が0.05mm以下であると、めっき液の回
り込みが悪く導電柱の形成が困難なためである。The core substrate 30 is formed with a thickness of 0.3 mm. The conductive pillar 14 has a diameter of 0.1 mm. Here, it is desirable that the conductive pillars 14 are not more than 0.25 mm and not less than 0.05 mm. This is 0.2
If it exceeds 5 mm, it is possible to form a through hole by drilling as in the prior art. On the other hand, the diameter of the conductive pillar is desirably 0.05 mm or more. This is because when a conductive pillar having a height corresponding to the thickness (0.3 mm) of the core substrate is formed in the opening of the resist as described later, if the opening diameter is 0.05 mm or less, the plating solution is This is because the wraparound is poor and it is difficult to form conductive columns.
【0021】導体柱を固定する樹脂は、フッ素材脂(例
えば、ポリテトラフルオロエチレン)等の熱可塑性樹脂
を用いることが望ましい。これは、熱可塑性樹脂は、誘
電率等の電気特性が良好であり、高周波用の多層プリン
ト配線板に好適に用い得るためである。It is desirable to use a thermoplastic resin such as a fluorine resin (for example, polytetrafluoroethylene) as a resin for fixing the conductor columns. This is because the thermoplastic resin has good electrical characteristics such as a dielectric constant and can be suitably used for a high-frequency multilayer printed wiring board.
【0022】図7は、該コア基板30を用いた多層プリ
ント配線板の断面を示している。多層コア基板30の表
面及び裏面にビルドアップ配線層90A、90Bが形成
されている。該ビルトアップ層90A、90Bは、バイ
アホール60及び導体回路58の形成された層間樹脂絶
縁層50と、バイアホール160及び導体回路158の
形成された層間樹脂絶縁層150と、からなる。FIG. 7 shows a cross section of a multilayer printed wiring board using the core substrate 30. Build-up wiring layers 90A and 90B are formed on the front and back surfaces of the multilayer core substrate 30. The built-up layers 90A and 90B include an interlayer resin insulation layer 50 having via holes 60 and conductor circuits 58 formed therein, and an interlayer resin insulation layer 150 having via holes 160 and conductor circuits 158 formed therein.
【0023】表面側には、ICチップのバンプ(図示せ
ず)へ接続するための半田バンプ76Uが形成され、裏
面側には、マザーボードのバンプ(図示せず)へ接続す
るための半田バンプ76Dが形成されている。多層プリ
ント配線板内では、ICチップへ接続する半田バンプ7
6Uからの導体回路が、マザーボード側へ接続する半田
バンプ76Dへ接続されている。表側のビルトアップ層
90Aと裏側のビルトアップ層90Bとは、コア基板3
0に形成された導電柱14を介して接続されている。On the front side, solder bumps 76U for connection to bumps (not shown) of the IC chip are formed, and on the back side, solder bumps 76D for connection to bumps (not shown) of the motherboard are formed. Are formed. In a multilayer printed wiring board, solder bumps 7 connected to IC chips
A conductor circuit from 6U is connected to a solder bump 76D connected to the motherboard. The front side built-up layer 90A and the back side built-up layer 90B are
It is connected via a conductive pillar 14 formed at zero.
【0024】ここで、コア基板の導電柱14の直上に
は、導体層24を介してバイアホール60が接続されて
いる。そして、層間樹脂絶縁層50に配設される導体回
路58は、図中に示さないバイアホール60に接続され
ている。該導体回路58には、上層のバイアホール16
0が接続され、該バイアホール160、或いは、バイア
ホール160(図中に示さない)へ接続された導体回路
158に半田バンプ76U、76Dが形成されている。Here, via holes 60 are connected via conductive layers 24 directly above the conductive pillars 14 of the core substrate. The conductor circuit 58 provided in the interlayer resin insulation layer 50 is connected to a via hole 60 (not shown). The conductor circuit 58 includes an upper via hole 16.
0, and solder bumps 76U and 76D are formed on the via hole 160 or on the conductor circuit 158 connected to the via hole 160 (not shown in the figure).
【0025】この多層プリント配線板においては、バイ
アホールの機能を果たす導電柱14の直上にバイアホー
ル60を形成することで、従来技術において用いられて
いたバイアホール接続用のパッドをなくしている。即
ち、コア基板30の表面にパッドを設けないことで、微
細なピッチで導電柱を配設し、上下の接続を取ってい
る。In this multilayer printed wiring board, the via hole 60 is formed immediately above the conductive pillar 14 which functions as a via hole, thereby eliminating the via hole connection pad used in the prior art. That is, since no pads are provided on the surface of the core substrate 30, conductive columns are arranged at a fine pitch, and the upper and lower connections are established.
【0026】引き続き、図2(F)に示すコア基板の製
造方法について図1を参照して具体的に説明する。先
ず、図1(A)に示すように銅箔10の上に市販の厚さ
0.3mmのレジストフィルム11を密着させる。次に、
0.1mmφの黒円が印刷されたフォトマスクフィルム
(図示せず)を密着させ、超高圧水銀灯により500mJ
/cm2 で露光する。これをDMTG溶液でスプレー現像
することにより、図1(B)に示すようにフォトマスク
フィルムに相当する寸法精度に優れた0.1mmφの開口
(導電柱形成用開口)12aを有する厚さ0.3mmのレ
ジスト12を形成する。引き続き、下記条件で銅箔10
に電流を流し、開口12a内に電解銅めっきを施し、高
さ0.3mmの導電柱14を形成する。なお、レジスト1
2に設ける開口12aは、従来技術で用いられていたス
ルーホール形成の際に用いるドリルによる通孔よりも小
径に形成できるため、該小径の開口12a内に導電柱1
4を形成することで微細なピッチで上下の接続を取るこ
とができる。 〔電解めっき水溶液〕 硫酸 180 g/l 硫酸銅 80 g/l 添加剤(アトテックジャパン製、商品名:カパラシドGL) 1 ml/l 〔電解めっき条件〕 電流密度 1A/dm2 温度 室温Subsequently, a method of manufacturing the core substrate shown in FIG. 2F will be specifically described with reference to FIG. First, as shown in FIG. 1A, a commercially available resist film 11 having a thickness of 0.3 mm is adhered onto the copper foil 10. next,
A photomask film (not shown) on which a 0.1 mmφ black circle is printed is brought into close contact with the photomask film, and 500 mJ using an ultra-high pressure mercury lamp.
/ Cm 2 . This is spray-developed with a DMTG solution, and as shown in FIG. 1 (B), has a 0.1 mmφ opening (opening for forming a conductive pillar) 12a having excellent dimensional accuracy equivalent to a photomask film. A 3 mm resist 12 is formed. Continuously, copper foil 10 under the following conditions
Then, a current is applied to the opening 12a, and electrolytic copper plating is performed in the opening 12a to form a conductive pillar 14 having a height of 0.3 mm. In addition, resist 1
2 can be formed to have a smaller diameter than a through hole formed by a drill used in forming a through hole used in the prior art, so that the conductive column 1 is provided in the small diameter opening 12a.
By forming 4, the upper and lower connections can be made at a fine pitch. [Electroplating aqueous solution] Sulfuric acid 180 g / l Copper sulfate 80 g / l Additive (manufactured by Atotech Japan, trade name: Capparaside GL) 1 ml / l [Electroplating conditions] Current density 1 A / dm 2 Temperature Room temperature
【0027】次に、レジスト12を5%のKOHで剥離
する(図1(D))。その後、熱可塑性樹脂であるフッ
素材脂(ポリテトラフルオロエチレン等)16を可塑温
度である370°C程度まで加熱して該導電柱14へ塗
布・充填し、冷却させ硬化させる。ここで、該コア基板
の用いられる多層プリント配線板は、該フッ素樹脂の可
塑温度以下の300°C未満で用いられる。本実施形態
では、導電柱14を固定する樹脂としてフッ素樹脂を用
いるが、エポキシ樹脂、ポリイミド樹脂、ビスマレイミ
ドトリアジン樹脂等の種々の樹脂を用いることができ、
更に、これら樹脂に樹脂粒子等の粒子を含ませることも
可能である。Next, the resist 12 is stripped with 5% KOH (FIG. 1D). Then, a fluororesin (polytetrafluoroethylene or the like) 16 which is a thermoplastic resin is heated to about 370 ° C. which is a plasticizing temperature, applied and filled in the conductive pillars 14, cooled, and cured. Here, the multilayer printed wiring board used as the core substrate is used at a temperature lower than the plasticization temperature of the fluororesin and lower than 300 ° C. In the present embodiment, a fluororesin is used as a resin for fixing the conductive columns 14, but various resins such as an epoxy resin, a polyimide resin, and a bismaleimide triazine resin can be used.
Further, these resins may contain particles such as resin particles.
【0028】最後に、図2(F)に示すように上部を樹
脂16を研磨し、導電柱14を露出させることで上層
(導体層24)との接続を確実にする。同様に、下部の
銅箔10を研磨し、導電柱14を露出させることで下層
(導体層24)との接続を確実にする。なお、本実施形
態では、下部の銅箔10を研磨により一旦剥離している
が、該銅箔10をエッチングすることで後述する導体層
24を形成することも可能である。Finally, as shown in FIG. 2F, the upper portion is polished with the resin 16 to expose the conductive pillars 14, thereby ensuring the connection with the upper layer (conductor layer 24). Similarly, the lower copper foil 10 is polished to expose the conductive pillars 14, thereby ensuring connection with the lower layer (conductor layer 24). In the present embodiment, the lower copper foil 10 is once peeled off by polishing, but the copper foil 10 may be etched to form a conductor layer 24 described later.
【0029】引き続き、該コア基板を用いる多層プリン
ト配線板の製造方法について説明する。なお、以下に述
べる方法は、セミアディティブ法による多層プリント配
線板の製造方法に関するものであるが、本発明における
多層プリント配線板の製造方法では、フルアディティブ
法やマルチラミネーション法、ピンラミネーション法を
採用することができる。先ず、本実施形態の多層プリン
ト配線板の製造方法に用いるA.無電解めっき用接着
剤、B.層間樹脂絶縁剤、C.樹脂充填剤の組成につい
て説明する。Next, a method for manufacturing a multilayer printed wiring board using the core substrate will be described. The method described below relates to a method of manufacturing a multilayer printed wiring board by a semi-additive method, but the method of manufacturing a multilayer printed wiring board in the present invention employs a full additive method, a multi-lamination method, and a pin lamination method. can do. First, a method of manufacturing a multilayer printed wiring board according to the present embodiment will be described. Adhesive for electroless plating, B. Interlayer resin insulation, C.I. The composition of the resin filler will be described.
【0030】A.無電解めっき用接着剤調製用の原料組
成物(上層用接着剤) 〔樹脂組成物〕クレゾールノボラック型エポキシ樹脂
(日本化薬製、分子量2500)の25%アクリル化物
を80wt%の濃度でDMDGに溶解させた樹脂液を35
重量部、感光性モノマー(東亜合成製、アロニックスM
315)3. 15重量部、消泡剤(サンノプコ製、S−
65)0. 5重量部、NMP3. 6重量部を攪拌混合し
て得る。A. Raw material composition for preparing adhesive for electroless plating (adhesive for upper layer) [Resin composition] 25% acrylate of cresol novolac type epoxy resin (Nippon Kayaku, molecular weight 2500) at 80 wt% concentration in DMDG 35 dissolved resin solution
Parts by weight, photosensitive monomer (Toa Gosei Co., Aronix M
315) 3.15 parts by weight of an antifoaming agent (manufactured by San Nopco, S-
65) 0.5 parts by weight and 3.6 parts by weight of NMP are obtained by stirring and mixing.
【0031】〔樹脂組成物〕ポリエーテルスルフォン
(PES)12重量部、エポキシ樹脂粒子(三洋化成
製、ポリマーポール)の平均粒径1. 0μmのものを
7. 2重量部、平均粒径0. 5μmのものを3. 09重
量部、を混合した後、さらにNMP30重量部を添加
し、ビーズミルで攪拌混合して得る。[Resin composition] 12 parts by weight of polyether sulfone (PES), 7.2 parts by weight of an epoxy resin particle (manufactured by Sanyo Chemical Industries, polymer pole) having an average particle size of 1.0 μm, 7.2 parts by weight, and an average particle size of 0.1 part After mixing 3.09 parts by weight of a 5 μm one, 30 parts by weight of NMP is further added, and the mixture is stirred and mixed by a bead mill.
【0032】〔硬化剤組成物〕イミダゾール硬化剤
(四国化成製、2E 4MZ−CN )2重量部、光開
始剤(チバガイギー製、イルガキュア I−907)2
重量部、光増感剤(日本化薬製、DETX−S)0. 2
重量部、NMP1. 5重量部を攪拌混合して得る。[Curing Agent Composition] 2 parts by weight of an imidazole curing agent (2E4MZ-CN, manufactured by Shikoku Chemicals), a photoinitiator (Irgacure I-907, manufactured by Ciba Geigy) 2
Parts by weight, photosensitizer (DETX-S, manufactured by Nippon Kayaku) 0.2
Parts by weight and 1.5 parts by weight of NMP are obtained by stirring and mixing.
【0033】B.層間樹脂絶縁剤調製用の原料組成物
(下層用接着剤) 〔樹脂組成物〕クレゾールノボラック型エポキシ樹脂
(日本化薬製、分子量2500)の25%アクリル化物
を80wt%の濃度でDMDGに溶解させた樹脂液を35
重量部、感光性モノマー(東亜合成製、アロニックスM
315)4重量部、消泡剤(サンノプコ製、S−65)
0. 5重量部、NMP3. 6重量部を攪拌混合して得
る。B. Raw material composition for preparing interlayer resin insulation agent (adhesive for lower layer) [Resin composition] 25% acrylate of cresol novolac type epoxy resin (Nippon Kayaku, molecular weight 2500) is dissolved in DMDG at a concentration of 80 wt%. 35 liquid resin
Parts by weight, photosensitive monomer (Toa Gosei Co., Aronix M
315) 4 parts by weight, an antifoaming agent (manufactured by San Nopco, S-65)
0.5 parts by weight and 3.6 parts by weight of NMP are obtained by stirring and mixing.
【0034】〔樹脂組成物〕ポリエーテルスルフォン
(PES)12重量部、エポキシ樹脂粒子(三洋化成
製、ポリマーポール)の平均粒径0. 5μmのものを1
4. 49重量部、を混合した後、さらにNMP30重量
部を添加し、ビーズミルで攪拌混合して得る。[Resin Composition] 12 parts by weight of polyethersulfone (PES) and 1 particle of epoxy resin particles (manufactured by Sanyo Chemical Industries, polymer pole) having an average particle size of 0.5 μm were used.
After mixing 4.49 parts by weight, 30 parts by weight of NMP is further added, and the mixture is stirred and mixed by a bead mill.
【0035】〔硬化剤組成物〕イミダゾール硬化剤
(四国化成製、2E 4MZ−CN)2重量部、光開始
剤(チバガイギー製、イルガキュア I−907)2重
量部、光増感剤(日本化薬製、DETX−S)0. 2重
量部、NMP1. 5重量部を攪拌混合して得る。[Curing Agent Composition] 2 parts by weight of an imidazole curing agent (2E4MZ-CN, manufactured by Shikoku Chemicals), 2 parts by weight of a photoinitiator (Irgacure I-907, manufactured by Ciba Geigy), a photosensitizer (Nippon Kayaku) And 0.2 parts by weight of DETX-S) and 1.5 parts by weight of NMP.
【0036】C.樹脂充填剤調製用の原料組成物 〔樹脂組成物〕ビスフェノールA型エポキシモノマー
(油化シェル製、エピコート828)100重量部、表
面に平均粒径1. 5μmのAl2 O3 球状粒子150重
量部、N−メチルピロリドン(NMP)30重量部、レ
ベリング剤(サンノプコ製、ペレノールS4)1. 5重
量部を攪拌混合し、その混合物の粘度を23±1℃で4
5, 000〜49, 000cps に調整する。C. Raw material composition for preparing resin filler [Resin composition] 100 parts by weight of bisphenol A type epoxy monomer (manufactured by Yuka Shell, Epicoat 828), 150 parts by weight of Al 2 O 3 spherical particles having an average particle size of 1.5 μm on the surface , 30 parts by weight of N-methylpyrrolidone (NMP) and 1.5 parts by weight of a leveling agent (manufactured by San Nopco, Perenol S4) were stirred and mixed, and the viscosity of the mixture was adjusted to 23 ± 1 ° C.
Adjust to 5,000-49,000 cps.
【0037】〔硬化剤組成物〕イミダゾール硬化剤
(四国化成製、2E 4MZ−CN)6. 5重量部。[Curing agent composition] 6.5 parts by weight of an imidazole curing agent (2E4MZ-CN, manufactured by Shikoku Chemicals).
【0038】引き続き、プリント配線板の製造工程につ
いて図2乃至図9を参照して説明する。 (1)先ず、図2(F)に示すコア基板30の両面に無
電解めっき及び電解めっきを行うことによりめっき銅膜
22を形成する(図2(G))。次に、パターン状にエ
ッチングすることで、導電柱14の直上にバイアホール
との接続用の導体層24と所定パターンの導体回路25
とを形成する(図1(H))。Next, the manufacturing process of the printed wiring board will be described with reference to FIGS. (1) First, a plated copper film 22 is formed by performing electroless plating and electrolytic plating on both surfaces of the core substrate 30 shown in FIG. 2 (F) (FIG. 2 (G)). Next, the conductor layer 24 for connection to the via hole and the conductor circuit 25 of a predetermined pattern are formed just above the conductive pillar 14 by etching in a pattern.
(FIG. 1H).
【0039】(2)この基板30を水洗いし、乾燥した
後、酸化浴(黒化浴)として、NaOH(10g/
l)、NaClO2 (40g/l)、Na3 O4 (6g
/l)、還元浴として、NaOH(10g/l)、Na
BH4 (6g/l)を用いた酸化−還元処理により、図
2(I)に示すように導体層24及び導体回路25の表
面に粗化層26を設ける。 (3)上述したCの樹脂充填剤調製用の原料組成物を混
合混練して樹脂充填剤を得る。(2) After the substrate 30 was washed with water and dried, NaOH (10 g /
l), NaClO 2 (40 g / l), Na 3 O 4 (6 g
/ L), NaOH (10 g / l), Na as a reducing bath
By oxidation-reduction treatment using BH 4 (6 g / l), a roughened layer 26 is provided on the surfaces of the conductor layer 24 and the conductor circuit 25 as shown in FIG. (3) The raw material composition for preparing the resin filler C described above is mixed and kneaded to obtain a resin filler.
【0040】(4)コア基板30にマスクを用いて印刷
を行い、充填剤40を基板30の表面へ塗布する(図2
(J)参照)。その後に充填剤40を熱硬化させる。(4) Printing is performed on the core substrate 30 using a mask, and the filler 40 is applied to the surface of the substrate 30 (FIG. 2).
(J)). After that, the filler 40 is thermally cured.
【0041】(5)上記(4)の処理を終えた基板30
を、#400のベルト研磨紙(三共理化学製)を用いた
ベルトサンダー研磨により、導体層24及び導体回路2
5の表面に樹脂充填剤が残らないように研磨し、次い
で、上記ベルトサンダー研磨による傷を取り除くための
バフ研磨をSiC砥粒にて行う。このような一連の研磨
を基板の他方の面についても同様に行う。次いで、10
0℃で1時間、150℃で1時間の加熱処理を行って樹
脂充填剤40を硬化させる。このようにして、導体層2
4及び導体回路25の上面の粗化層を除去して、基板3
0の両面を図3(K)に示すように平滑化する。(5) The substrate 30 after the processing of the above (4)
Is subjected to belt sanding using # 400 belt polishing paper (manufactured by Sankyo Rikagaku Co., Ltd.) to form the conductor layer 24
5 is polished so that no resin filler remains on the surface, and then buffing is performed with SiC abrasive grains to remove the scratches caused by the belt sander polishing. Such a series of polishing is similarly performed on the other surface of the substrate. Then 10
Heat treatment is performed at 0 ° C. for 1 hour and at 150 ° C. for 1 hour to cure the resin filler 40. Thus, the conductor layer 2
4 and the roughened layer on the upper surface of the conductor circuit 25 are removed, and the substrate 3
0 are smoothed as shown in FIG.
【0042】(6)上記(5)の処理で露出した導体層
24及び導体回路25上面に図3(L)に示すように、
厚さ2. 5μmのCu−Ni−P合金からなる粗化層
(凹凸層)42を形成し、さらに、粗化層42の表面に
厚さ0. 3μmのSn層(図示せず)を設ける。その形
成方法は以下のようである。基板30を酸性脱脂してソ
フトエッチングし、次いで、塩化パラジウムと有機酸か
らなる触媒溶液で処理して、Pd触媒を付与し、この触
媒を活性化した後、硫酸銅8g/l、硫酸ニッケル0.
6g/l、クエン酸15g/l、次亜リン酸ナトリウム
29g/l、ホウ酸31g/l、界面活性剤0. 1g/
l、pH=9からなる無電解めっき浴にてめっきを施
し、導体回路24上面にCu−Ni−P合金の粗化層4
2を形成する。ついで、ホウフッ化スズ0. 1mol /
l、チオ尿素1. 0mol /l、温度50℃、pH=1.
2の条件でCu−Sn置換反応させ、粗化層42の表面
に厚さ0.3μmのSn層を設ける。(6) As shown in FIG. 3 (L), on the upper surfaces of the conductor layers 24 and the conductor circuits 25 exposed in the process (5),
A roughened layer (concavo-convex layer) 42 made of a 2.5 μm thick Cu—Ni—P alloy is formed, and a 0.3 μm thick Sn layer (not shown) is provided on the surface of the roughened layer 42. . The formation method is as follows. The substrate 30 was acid-degreased and soft-etched, and then treated with a catalyst solution comprising palladium chloride and an organic acid to provide a Pd catalyst. After activating this catalyst, copper sulfate 8 g / l and nickel sulfate 0 .
6 g / l, citric acid 15 g / l, sodium hypophosphite 29 g / l, boric acid 31 g / l, surfactant 0.1 g / l
1, plating is performed in an electroless plating bath having a pH of 9 and a roughened layer 4 of Cu—Ni—P alloy is formed on the upper surface of the conductor circuit 24.
Form 2 Then, tin borofluoride 0.1 mol /
1, thiourea 1.0 mol / l, temperature 50 ° C., pH = 1.
A Cu—Sn substitution reaction is performed under the conditions of 2 to provide a 0.3 μm thick Sn layer on the surface of the roughened layer 42.
【0043】(7)上述した組成物Bの層間樹脂絶縁剤
調製用の原料組成物を攪拌混合し、粘度1. 5 Pa ・s
に調整して層間樹脂絶縁剤(下層用)を得る。次いで、
上述した組成物Aの無電解めっき用接着剤調製用の原料
組成物を攪拌混合し、粘度7Pa・sに調整して無電解め
っき用接着剤溶液(上層用)を得る。(7) The above-mentioned raw material composition for preparing the interlayer resin insulating material of the composition B was mixed by stirring, and the viscosity was 1.5 Pa · s.
To obtain an interlayer resin insulating agent (for lower layer). Then
The raw material composition for preparing the adhesive for electroless plating of the composition A described above is stirred and mixed to adjust the viscosity to 7 Pa · s to obtain an adhesive solution for electroless plating (for the upper layer).
【0044】(8)上記(6)の基板30(図3
(L))の両面に、図3(M)に示すように上記(7)
で得られた粘度1. 5Pa・sの層間樹脂絶縁剤(下層
用)44を調製後24時間以内にロールコータで塗布
し、水平状態で20分間放置してから、60℃で30分
の乾燥(プリベーク)を行う。次いで、上記(7)で得
られた粘度7Pa・sの感光性の接着剤溶液(上層用)4
6を調製後24時間以内に塗布し、水平状態で20分間
放置してから、60℃で30分の乾燥(プリベーク)を
行い、厚さ35μmの接着剤層50を形成する。(8) The substrate 30 of the above (6) (FIG. 3)
(L)), as shown in FIG.
The interlayer resin insulating agent (for lower layer) 44 having a viscosity of 1.5 Pa · s obtained in the above was applied by a roll coater within 24 hours after preparation, and left in a horizontal state for 20 minutes, and then dried at 60 ° C. for 30 minutes. (Pre-bake). Next, the photosensitive adhesive solution (for the upper layer) having a viscosity of 7 Pa · s obtained in the above (7) 4
6 is applied within 24 hours after preparation, left in a horizontal state for 20 minutes, and then dried (prebaked) at 60 ° C. for 30 minutes to form an adhesive layer 50 having a thickness of 35 μm.
【0045】(9)上記(8)で接着剤層50を形成し
た基板30の両面に、85μmφの黒円が印刷されたフ
ォトマスクフィルム(図示せず)を密着させ、超高圧水
銀灯により500mJ/cm2 で露光する。これをDMTG
溶液でスプレー現像し、さらに、当該基板を超高圧水銀
灯により3000mJ/cm2 で露光し、100℃で1時
間、120℃で1時間、その後150℃で3時間の加熱
処理(ポストベーク)をすることにより、図4(N)に
示すようにフォトマスクフィルムに相当する寸法精度に
優れた85μmφの開口(バイアホール形成用開口)4
8を有する厚さ35μmの層間樹脂絶縁層(2層構造)
50を形成する。なお、バイアホールとなる開口48に
は、スズめっき層を部分的に露出させる。(9) A photomask film (not shown) on which a black circle of 85 μmφ is printed is brought into close contact with both surfaces of the substrate 30 on which the adhesive layer 50 has been formed in the above (8), and 500 mJ / to exposure in cm 2. This is DMTG
The substrate is exposed to 3000 mJ / cm 2 by an ultra-high pressure mercury lamp, and subjected to a heat treatment (post-bake) at 100 ° C. for 1 hour, 120 ° C. for 1 hour, and then at 150 ° C. for 3 hours. As a result, as shown in FIG. 4 (N), an 85 μmφ opening (via hole forming opening) 4 having excellent dimensional accuracy corresponding to a photomask film.
35 having a thickness of 35 μm and having a thickness of 8 (two-layer structure)
Form 50. Note that the tin plating layer is partially exposed in the opening 48 serving as a via hole.
【0046】(10)開口48が形成された基板30
を、クロム酸に19分間浸漬し、層間樹脂絶縁層50の
表面に存在するエポキシ樹脂粒子を溶解除去することに
より、図4(O)に示すように当該層間樹脂絶縁層50
の表面を粗化面51とし、その後、中和溶液(シプレイ
社製)に浸漬してから水洗いする。さらに、粗面化処理
(粗化深さ3μm)した該基板30の表面に、パラジウ
ム触媒(アトテック製)を付与することにより、層間樹
脂絶縁層50の表面およびバイアホール用開口48の内
壁面に触媒核を付ける。(10) The substrate 30 having the opening 48 formed
Is immersed in chromic acid for 19 minutes to dissolve and remove the epoxy resin particles present on the surface of the interlayer resin insulation layer 50, thereby forming the interlayer resin insulation layer 50 as shown in FIG.
Is made a roughened surface 51, and then immersed in a neutralizing solution (manufactured by Shipley) and then washed with water. Further, by applying a palladium catalyst (manufactured by Atotech) to the surface of the substrate 30 which has been subjected to the surface roughening treatment (roughening depth: 3 μm), the surface of the interlayer resin insulating layer 50 and the inner wall surface of the via hole opening 48 are formed. Attach catalyst core.
【0047】(11)以下に示す組成の無電解銅めっき
水溶液中に基板を浸漬して、図4(P)に示すように粗
面全体に厚さ0. 6μmの無電解銅めっき膜52を形成
する。 〔無電解めっき水溶液〕 EDTA 150 g/l 硫酸銅 20 g/l HCHO 30 ml /l NaOH 40 g/l α、α’−ビピリジル 80 mg /l PEG 0. 1 g/l 〔無電解めっき条件〕70℃の液温度で30分(11) The substrate is immersed in an aqueous electroless copper plating solution having the following composition to form an electroless copper plating film 52 having a thickness of 0.6 μm on the entire rough surface as shown in FIG. 4 (P). Form. [Electroless plating aqueous solution] EDTA 150 g / l Copper sulfate 20 g / l HCHO 30 ml / l NaOH 40 g / l α, α'-bipyridyl 80 mg / l PEG 0.1 g / l [Electroless plating conditions] 30 minutes at 70 ° C liquid temperature
【0048】(12)市販のレジストフィルムを貼り付
けた後、マスクを載置して、100 mJ /cm2 で露光、
0. 8%炭酸ナトリウムで現像処理し、図5(Q)に示
すように厚さ15μmのめっきレジスト54を設ける。(12) After attaching a commercially available resist film, a mask is placed and exposed at 100 mJ / cm 2 .
After developing with 0.8% sodium carbonate, a plating resist 54 having a thickness of 15 μm is provided as shown in FIG.
【0049】(13)次いで、上述した導電柱の形成時
と同様の条件に従い電解銅めっきを施し、厚さ15μm
の電解めっき銅膜56を形成する(図5(R))。(13) Next, electrolytic copper plating is performed under the same conditions as those for forming the above-mentioned conductive pillars to a thickness of 15 μm.
Is formed (FIG. 5 (R)).
【0050】(14)めっきレジスト56を5%のKO
Hで剥離除去した後、そのめっきレジスト56下の無電
解めっき膜52を硫酸と過酸化水素の混合液でエッチン
グ処理して溶解除去し、図5(S)で示すように無電解
銅めっき膜52と電解銅めっき膜56からなる厚さ15
μmの導体回路58及びバイアホール60を形成する。
さらに、70℃で800g/lのクロム酸に3分間浸漬
して、導体回路58、バイアホール60間の無電解めっ
き用接着剤層表面を1μmエッチング処理し、表面のパ
ラジウム触媒を除去する。(14) The plating resist 56 is made of 5% KO
After stripping and removing with H, the electroless plating film 52 under the plating resist 56 is dissolved and removed by etching with a mixed solution of sulfuric acid and hydrogen peroxide, and as shown in FIG. 52 and a thickness 15 composed of the electrolytic copper plating film 56
A conductor circuit 58 and a via hole 60 of μm are formed.
Further, the surface of the adhesive layer for electroless plating between the conductor circuit 58 and the via hole 60 is etched by 1 μm at 70 ° C. for 3 minutes in 800 g / l chromic acid to remove the palladium catalyst on the surface.
【0051】(15)導体回路58を形成した基板30
を、硫酸銅8g/l、硫酸ニッケル0.6g/l、クエ
ン酸15g/l、次亜リン酸ナトリウム29g/l、ホ
ウ酸31g/l、界面活性剤0.1g/lからなるpH
=9の無電解めっき液に浸漬し、図6(T)に示すよう
に該導体回路58及びバイアホール60の表面に厚さ3
μmの銅−ニッケル−リンからなる粗化層62を形成す
る。ついで、ホウフッ化スズ0.1mol/l、チオ尿
素1.0mol/l、温度50℃、pH=1.2の条件
でCu−Sn置換反応させ、粗化層62の表面に0.3
μmの厚さのSn層を設ける(Sn層については図示し
ない)。(15) Substrate 30 on which conductor circuit 58 is formed
Was prepared by adding 8 g / l of copper sulfate, 0.6 g / l of nickel sulfate, 15 g / l of citric acid, 29 g / l of sodium hypophosphite, 31 g / l of boric acid, and 0.1 g / l of a surfactant.
= 9, and a thickness of 3 mm was applied to the surfaces of the conductor circuit 58 and the via hole 60 as shown in FIG.
A roughened layer 62 of μm copper-nickel-phosphorus is formed. Then, Cu-Sn substitution reaction was carried out under the conditions of tin borofluoride 0.1 mol / l, thiourea 1.0 mol / l, temperature 50 ° C., pH = 1.2, and 0.3 μm was applied to the surface of the roughened layer 62.
A Sn layer having a thickness of μm is provided (the Sn layer is not shown).
【0052】(16)(2)〜(15)の工程を繰り返
すことにより、さらに上層の層間樹脂絶縁層150とバ
イアホール160及び導体回路158を形成する(図6
(U))。(16) By repeating the steps (2) to (15), an upper interlayer resin insulation layer 150, a via hole 160 and a conductor circuit 158 are further formed (FIG. 6).
(U)).
【0053】(17)そして、図7に示すようにパッド
部分に対応する開口部71を設けた(開口径200μ
m)ソルダーレジスト層(厚み20μm)70を形成し
た後、ソルダーレジスト層を補強用の樹脂組成物をソル
ダーレジストの開口群の周囲に塗布し、厚さ40μmの
補強層78を形成する。(17) Then, as shown in FIG. 7, an opening 71 corresponding to the pad portion was provided (opening diameter 200 μm).
m) After the formation of the solder resist layer (thickness: 20 μm) 70, a resin composition for reinforcing the solder resist layer is applied around the opening group of the solder resist to form a reinforcement layer 78 having a thickness of 40 μm.
【0054】(18)次に、基板30を、無電解ニッケ
ルめっき液に20分間浸漬して、開口部71に厚さ5μ
mのニッケルめっき層72を形成し、さらに、その基板
30を、無電解金めっき液に浸漬して、ニッケルめっき
層上に厚さ0.03μmの金めっき層74を形成する。(18) Next, the substrate 30 is immersed in an electroless nickel plating solution for 20 minutes, so that the opening 71 has a thickness of 5 μm.
Then, a nickel plating layer 72 having a thickness of 0.03 μm is formed on the nickel plating layer by immersing the substrate 30 in an electroless gold plating solution.
【0055】(19)そして、ソルダーレジスト層70
の開口部71に、はんだペーストを印刷して、200℃
でリフローすることによりはんだバンプ76U、76D
を形成し、はんだパンプを有するプリント配線板を製造
する。(19) The solder resist layer 70
The solder paste is printed on the opening 71 of
Solder bumps 76U, 76D
Is formed, and a printed wiring board having a solder pump is manufactured.
【0056】本実施形態の多層プリント配線板の製造方
法では、コア基板30の導電柱14の直上にバイアホー
ル60を形成することで、コア基板30表面のバイアホ
ールとの接続用パッドをなくし、微細なピッチで導電柱
14を配設して上下の接続を取っている。In the method for manufacturing a multilayer printed wiring board according to the present embodiment, the via holes 60 are formed directly above the conductive pillars 14 of the core substrate 30, thereby eliminating the connection pads with the via holes on the surface of the core substrate 30. The conductive pillars 14 are arranged at a fine pitch to establish a vertical connection.
【0057】[0057]
【発明の効果】請求項1及び請求項2のコア基板は、ス
ルーホールとしての機能を有する導体柱を樹脂で固定し
てなり、スルーホールを用いないため、微細なピッチで
上下の接続を取ることができる。According to the first and second aspects of the present invention, the conductor pillar having a function as a through-hole is fixed with resin, and the through-hole is not used. be able to.
【0058】請求項3のコア基板は、導体柱を固定する
樹脂が、熱可塑性であるので誘電率等の電気特性が良好
であり、高周波用の多層プリント配線板に用いることが
可能となる。According to the third aspect of the present invention, since the resin for fixing the conductor pillars is thermoplastic, the core substrate has good electrical characteristics such as a dielectric constant and can be used for a high-frequency multilayer printed wiring board.
【0059】請求項4及び請求項5のコア基板の製造方
法では、スルーホール形成の際に用いるドリルによる通
孔よりも小径に形成できるレジストの開口に導電柱を形
成するため、該小径の開口内に形成した導電柱を用いる
ことで微細なピッチで上下の接続を取ることができる。In the method for manufacturing a core substrate according to the fourth and fifth aspects, since the conductive pillar is formed in the resist opening which can be formed to have a smaller diameter than the through hole formed by the drill used for forming the through hole, the opening having the small diameter is formed. By using the conductive pillars formed therein, the upper and lower connections can be made at a fine pitch.
【0060】請求項6のコア基板の製造方法では、導電
柱を電解めっきにより形成するため、廉価かつ迅速に形
成することができる。In the method of manufacturing a core substrate according to the sixth aspect, since the conductive columns are formed by electrolytic plating, they can be formed inexpensively and quickly.
【0061】請求項7の多層プリント配線板では、コア
基板の導電柱の直上にバイアホールを形成することで、
パッドをなくし、微細なピッチで上下の接続を取ること
を可能にする。In the multilayer printed wiring board according to the present invention, the via hole is formed directly above the conductive pillar of the core substrate,
Eliminates pads and allows up and down connections with fine pitch.
【図1】図1(A)、図1(B)、図1(C)、図1
(D)、図1(E)は、本発明の1実施形態に係るコア
基板の製造方法の工程図である。1 (A), 1 (B), 1 (C), 1
(D) and FIG. 1 (E) are process diagrams of a method for manufacturing a core substrate according to one embodiment of the present invention.
【図2】図2(F)、図2(G)、図2(H)、図2
(I)、図2(J)は、本発明の1実施形態に係る多層
プリント配線板の製造方法の工程図である。2 (F), 2 (G), 2 (H), 2
(I) and FIG. 2 (J) are process diagrams of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
【図3】図3(K)、図(L)、図3(M)は、本発明
の1実施形態に係る多層プリント配線板の製造方法の工
程図である。3 (K), 3 (L) and 3 (M) are process diagrams of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
【図4】図4(N)、図4(O)、図4(P)は、本発
明の1実施形態に係る多層プリント配線板の製造方法の
工程図である。FIGS. 4 (N), 4 (O), and 4 (P) are process diagrams of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
【図5】図5(Q)、図5(R)、図5(S)は、本発
明の1実施形態に係る多層プリント配線板の製造方法の
工程図である。FIGS. 5 (Q), 5 (R), and 5 (S) are process diagrams of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
【図6】図6(T)、図6(U)は、本発明の1実施形
態に係る多層プリント配線板の製造方法の工程図であ
る。FIGS. 6 (T) and 6 (U) are process diagrams of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
【図7】本発明の1実施形態に係る多層プリント配線板
の製造方法の断面図である。FIG. 7 is a cross-sectional view of a method for manufacturing a multilayer printed wiring board according to one embodiment of the present invention.
10 銅箔(導電体) 12 レジスト 12a 開口 14 導電柱 16 樹脂 24 導体回路 30 コア基板 50 層間樹脂絶縁層 56 無電解めっき銅膜 58 導体回路 60 バイアホール DESCRIPTION OF SYMBOLS 10 Copper foil (conductor) 12 Resist 12a Opening 14 Conductive pillar 16 Resin 24 Conductor circuit 30 Core substrate 50 Interlayer resin insulation layer 56 Electroless plating copper film 58 Conductor circuit 60 Via hole
Claims (7)
とする多層プリント配線板用のコア基板。1. A core substrate for a multilayer printed wiring board, wherein a conductive pillar is fixed with a resin.
0.05mm以上であることを特徴とする請求項1のコア
基板。2. The core substrate according to claim 1, wherein the diameter of the conductive pillar is not more than 0.25 mm and not less than 0.05 mm.
特徴とする請求項1又は2のコア基板。3. The core substrate according to claim 1, wherein the resin is a thermoplastic resin.
を特徴とする多層プリント配線板用のコア基板の製造方
法。 (a)導電体の上に開口を有するレジストを形成する工
程、(b)前記開口にめっきを施し導電柱を形成する工
程、(c)前記レジストを除去する工程、(d)前記導
電柱間に樹脂を充填する工程。4. A method for manufacturing a core substrate for a multilayer printed wiring board, comprising the following steps (a) to (d). (A) forming a resist having an opening on a conductor, (b) forming a conductive column by plating the opening, (c) removing the resist, and (d) between the conductive columns. The step of filling the resin.
を特徴とする多層プリント配線板用のコア基板の製造方
法。 (a)導電体の上に開口を有するレジストを形成する工
程、(b)前記開口にめっきを施し導電柱を形成する工
程、(c)前記レジストを除去する工程、(d)前記導
電柱間に樹脂を充填する工程。(e)前記充填した樹脂
の上部を研磨して前記導電柱を露出させる工程。5. A method of manufacturing a core substrate for a multilayer printed wiring board, comprising the following steps (a) to (e). (A) forming a resist having an opening on a conductor, (b) forming a conductive column by plating the opening, (c) removing the resist, and (d) between the conductive columns. The step of filling the resin. (E) polishing the upper portion of the filled resin to expose the conductive columns.
において、前記導電柱を電解めっきにより形成すること
を特徴とする請求項4又は5のコア基板の製造方法。6. The method according to claim 4, wherein in the step of forming the conductive pillar by plating, the conductive pillar is formed by electrolytic plating.
ール及び導体回路とを交互に積層してなる多層プリント
配線板であって、 前記コア基板が導体柱を樹脂で固定してなり、 前記コア基板の前記導電柱の直上に前記バイアホールが
形成されていることを特徴とする多層プリント配線板。7. A multilayer printed wiring board in which interlayer resin insulating layers, via holes, and conductive circuits are alternately laminated on a core substrate, wherein the core substrate has conductive pillars fixed with resin. A multilayer printed wiring board, wherein the via hole is formed immediately above the conductive pillar of a core substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10124206A JPH11307937A (en) | 1998-04-18 | 1998-04-18 | Core board, its manufacturing method, and multi-layer printed circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10124206A JPH11307937A (en) | 1998-04-18 | 1998-04-18 | Core board, its manufacturing method, and multi-layer printed circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11307937A true JPH11307937A (en) | 1999-11-05 |
Family
ID=14879626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10124206A Pending JPH11307937A (en) | 1998-04-18 | 1998-04-18 | Core board, its manufacturing method, and multi-layer printed circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11307937A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995455B2 (en) | 2002-11-29 | 2006-02-07 | Renesas Technology Corp. | Semiconductor device |
| JP2013512581A (en) * | 2009-11-30 | 2013-04-11 | エルジー イノテック カンパニー リミテッド | Printed circuit board and manufacturing method thereof |
| JP2016004994A (en) * | 2014-06-16 | 2016-01-12 | 恆勁科技股▲ふん▼有限公司 | Package apparatus and manufacturing method thereof |
| CN116017888A (en) * | 2021-10-21 | 2023-04-25 | 礼鼎半导体科技秦皇岛有限公司 | Circuit board and manufacturing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144881U (en) * | 1984-08-27 | 1986-03-25 | 日本電気株式会社 | printed wiring board |
| JPS61179597A (en) * | 1985-02-04 | 1986-08-12 | 沖電気工業株式会社 | Formation of multilayer interconnection |
| JPH0513960A (en) * | 1990-08-28 | 1993-01-22 | Ngk Spark Plug Co Ltd | Method for manufacturing multilayer wiring board |
| JPH06350258A (en) * | 1993-04-16 | 1994-12-22 | Toshiba Corp | Method for manufacturing printed wiring board |
| JPH08139450A (en) * | 1994-11-07 | 1996-05-31 | Toshiba Corp | Method for manufacturing printed wiring board |
| JPH09241419A (en) * | 1996-03-06 | 1997-09-16 | Hitachi Ltd | Solvent-free composition, multilayer wiring board, and methods for producing the same |
| JPH09266375A (en) * | 1996-03-27 | 1997-10-07 | Ibiden Co Ltd | Multilayer printed interconnection board manufacturing method |
| JPH1050882A (en) * | 1996-08-02 | 1998-02-20 | Toppan Printing Co Ltd | Chip carrier and its manufacturing apparatus and manufacturing method |
| JPH1075063A (en) * | 1996-09-02 | 1998-03-17 | Oki Purintetsudo Circuit Kk | Manufacture of post-connection type printed wiring board |
-
1998
- 1998-04-18 JP JP10124206A patent/JPH11307937A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144881U (en) * | 1984-08-27 | 1986-03-25 | 日本電気株式会社 | printed wiring board |
| JPS61179597A (en) * | 1985-02-04 | 1986-08-12 | 沖電気工業株式会社 | Formation of multilayer interconnection |
| JPH0513960A (en) * | 1990-08-28 | 1993-01-22 | Ngk Spark Plug Co Ltd | Method for manufacturing multilayer wiring board |
| JPH06350258A (en) * | 1993-04-16 | 1994-12-22 | Toshiba Corp | Method for manufacturing printed wiring board |
| JPH08139450A (en) * | 1994-11-07 | 1996-05-31 | Toshiba Corp | Method for manufacturing printed wiring board |
| JPH09241419A (en) * | 1996-03-06 | 1997-09-16 | Hitachi Ltd | Solvent-free composition, multilayer wiring board, and methods for producing the same |
| JPH09266375A (en) * | 1996-03-27 | 1997-10-07 | Ibiden Co Ltd | Multilayer printed interconnection board manufacturing method |
| JPH1050882A (en) * | 1996-08-02 | 1998-02-20 | Toppan Printing Co Ltd | Chip carrier and its manufacturing apparatus and manufacturing method |
| JPH1075063A (en) * | 1996-09-02 | 1998-03-17 | Oki Purintetsudo Circuit Kk | Manufacture of post-connection type printed wiring board |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995455B2 (en) | 2002-11-29 | 2006-02-07 | Renesas Technology Corp. | Semiconductor device |
| DE10349692B4 (en) * | 2002-11-29 | 2006-07-06 | Rohm Co. Ltd. | Through-electrode semiconductor device and method of making the same |
| US7452751B2 (en) | 2002-11-29 | 2008-11-18 | Renesas Technology Corp. | Semiconductor device and method of manufacturing the same |
| JP2013512581A (en) * | 2009-11-30 | 2013-04-11 | エルジー イノテック カンパニー リミテッド | Printed circuit board and manufacturing method thereof |
| JP2016004994A (en) * | 2014-06-16 | 2016-01-12 | 恆勁科技股▲ふん▼有限公司 | Package apparatus and manufacturing method thereof |
| CN116017888A (en) * | 2021-10-21 | 2023-04-25 | 礼鼎半导体科技秦皇岛有限公司 | Circuit board and manufacturing method thereof |
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