JPS51114865A - Enhanced diffusion method - Google Patents

Enhanced diffusion method

Info

Publication number
JPS51114865A
JPS51114865A JP51012927A JP1292776A JPS51114865A JP S51114865 A JPS51114865 A JP S51114865A JP 51012927 A JP51012927 A JP 51012927A JP 1292776 A JP1292776 A JP 1292776A JP S51114865 A JPS51114865 A JP S51114865A
Authority
JP
Japan
Prior art keywords
diffusion method
enhanced diffusion
enhanced
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51012927A
Other languages
English (en)
Other versions
JPS6031099B2 (ja
Inventor
Mei Kuu San
Ei Pirusu Chiyaaruzu
Aaru Poponiaku Mikaeru
Oo Shiyuenkaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS51114865A publication Critical patent/JPS51114865A/ja
Publication of JPS6031099B2 publication Critical patent/JPS6031099B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

Landscapes

  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP51012927A 1975-03-26 1976-02-10 増速拡散により半導体基板内に所定の導電型の領域を形成する方法 Expired JPS6031099B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US562370 1975-03-26
US05/562,370 US3982967A (en) 1975-03-26 1975-03-26 Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths

Publications (2)

Publication Number Publication Date
JPS51114865A true JPS51114865A (en) 1976-10-08
JPS6031099B2 JPS6031099B2 (ja) 1985-07-20

Family

ID=24246013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51012927A Expired JPS6031099B2 (ja) 1975-03-26 1976-02-10 増速拡散により半導体基板内に所定の導電型の領域を形成する方法

Country Status (5)

Country Link
US (1) US3982967A (ja)
JP (1) JPS6031099B2 (ja)
DE (1) DE2611559C3 (ja)
FR (1) FR2305853A1 (ja)
GB (1) GB1478003A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138173A (ja) * 2013-01-18 2014-07-28 Shi Exaination & Inspection Ltd 半導体装置の製造方法、及び基板処理システム

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2038548B (en) * 1978-10-27 1983-03-23 Nippon Telegraph & Telephone Isolating semiconductor device by porous silicon oxide
US4335504A (en) * 1980-09-24 1982-06-22 Rockwell International Corporation Method of making CMOS devices
US4522657A (en) * 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
JPS62241744A (ja) * 1986-04-14 1987-10-22 Fujitsu Ten Ltd 車載用機器表示部のデイマ−回路
US4929489A (en) * 1987-07-20 1990-05-29 Dreschhoff Gisela A M Method of making and using selective conductive regions in diamond layers
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5330920A (en) * 1993-06-15 1994-07-19 Digital Equipment Corporation Method of controlling gate oxide thickness in the fabrication of semiconductor devices
JP3865145B2 (ja) * 1996-01-26 2007-01-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0889505B1 (en) * 1997-07-03 2005-06-08 STMicroelectronics S.r.l. Process for cutting trenches in a single crystal substrate
US6114225A (en) * 1998-11-16 2000-09-05 Industrial Technology Research Institute Local penetrating proton beam transmutation doping method for silicon
DE102005063462B4 (de) * 2004-09-22 2017-10-12 Infineon Technologies Ag Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods
GB1420065A (en) * 1972-01-31 1976-01-07 Mullard Ltd Methods of manufacturing semiconductor bodies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138173A (ja) * 2013-01-18 2014-07-28 Shi Exaination & Inspection Ltd 半導体装置の製造方法、及び基板処理システム

Also Published As

Publication number Publication date
FR2305853A1 (fr) 1976-10-22
FR2305853B1 (ja) 1978-11-10
US3982967A (en) 1976-09-28
GB1478003A (en) 1977-06-29
DE2611559A1 (de) 1976-10-07
DE2611559C3 (de) 1981-12-17
DE2611559B2 (de) 1981-04-16
JPS6031099B2 (ja) 1985-07-20

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