JPS51146189A - Charge coupled device - Google Patents

Charge coupled device

Info

Publication number
JPS51146189A
JPS51146189A JP51009182A JP918276A JPS51146189A JP S51146189 A JPS51146189 A JP S51146189A JP 51009182 A JP51009182 A JP 51009182A JP 918276 A JP918276 A JP 918276A JP S51146189 A JPS51146189 A JP S51146189A
Authority
JP
Japan
Prior art keywords
coupled device
charge coupled
charge
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51009182A
Other languages
English (en)
Other versions
JPS6042634B2 (ja
Inventor
Chiyaaruzu Furai Robaato
Sen Fu Horun
Efu Tatsushiyu Jiyunia Aru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS51146189A publication Critical patent/JPS51146189A/ja
Publication of JPS6042634B2 publication Critical patent/JPS6042634B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP51009182A 1975-01-31 1976-01-30 電荷結合装置 Expired JPS6042634B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/545,954 US4047215A (en) 1975-01-31 1975-01-31 Uniphase charge coupled devices
US545954 1990-07-02

Publications (2)

Publication Number Publication Date
JPS51146189A true JPS51146189A (en) 1976-12-15
JPS6042634B2 JPS6042634B2 (ja) 1985-09-24

Family

ID=24178219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51009182A Expired JPS6042634B2 (ja) 1975-01-31 1976-01-30 電荷結合装置

Country Status (2)

Country Link
US (1) US4047215A (ja)
JP (1) JPS6042634B2 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2353957A1 (fr) * 1976-06-04 1977-12-30 Thomson Csf Procede de fabrication d'un dispositif semi-conducteur a transfert de charge a deux phases, et dispositif obtenu par ce procede
JPS5849035B2 (ja) * 1976-08-16 1983-11-01 株式会社東芝 電荷転送素子
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
US4364076A (en) * 1977-08-26 1982-12-14 Texas Instruments Incorporated Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current
US4249194A (en) * 1977-08-29 1981-02-03 Texas Instruments Incorporated Integrated circuit MOS capacitor using implanted region to change threshold
US4228445A (en) * 1977-10-27 1980-10-14 Texas Instruments Incorporated Dual plane well-type two-phase ccd
US4227202A (en) * 1977-10-27 1980-10-07 Texas Instruments Incorporated Dual plane barrier-type two-phase CCD
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
US4994875A (en) * 1978-05-16 1991-02-19 Texas Instruments Incorporated Virtual phase charge transfer device
DE2837485A1 (de) * 1978-08-28 1980-04-17 Siemens Ag Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher
US4903097A (en) * 1979-03-26 1990-02-20 Hughes Aircraft Company CCD read only memory
US4592130A (en) * 1979-03-26 1986-06-03 Hughes Aircraft Company Method of fabricating a CCD read only memory utilizing dual-level junction formation
US5118631A (en) * 1981-07-10 1992-06-02 Loral Fairchild Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
NL8600786A (nl) * 1986-03-27 1987-10-16 Philips Nv Ladingsgekoppelde inrichting.
US4746622A (en) * 1986-10-07 1988-05-24 Eastman Kodak Company Process for preparing a charge coupled device with charge transfer direction biasing implants
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
US5516716A (en) * 1994-12-02 1996-05-14 Eastman Kodak Company Method of making a charge coupled device with edge aligned implants and electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
US5602410A (en) * 1995-08-25 1997-02-11 Siemens Aktiengesellschaft Off-state gate-oxide field reduction in CMOS
US6818483B2 (en) * 2002-07-16 2004-11-16 Fairchild Imaging Large area, fast frame rate charge coupled device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796933A (en) * 1971-11-10 1974-03-12 Ibm Single-phase charge-coupled semiconductor device
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes
US3918997A (en) * 1974-12-06 1975-11-11 Bell Telephone Labor Inc Method of fabricating uniphase charge coupled devices

Also Published As

Publication number Publication date
JPS6042634B2 (ja) 1985-09-24
US4047215A (en) 1977-09-06

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