JPS52152187A - Light emitting diode having increased light emitting efficiency and method of producing same - Google Patents

Light emitting diode having increased light emitting efficiency and method of producing same

Info

Publication number
JPS52152187A
JPS52152187A JP6054177A JP6054177A JPS52152187A JP S52152187 A JPS52152187 A JP S52152187A JP 6054177 A JP6054177 A JP 6054177A JP 6054177 A JP6054177 A JP 6054177A JP S52152187 A JPS52152187 A JP S52152187A
Authority
JP
Japan
Prior art keywords
light emitting
producing same
emitting diode
increased
emitting efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6054177A
Other languages
Japanese (ja)
Inventor
Debitsudo Kingu Furederitsuku
Jiyon Supuringusoopu Ansonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS52152187A publication Critical patent/JPS52152187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
JP6054177A 1976-06-11 1977-05-26 Light emitting diode having increased light emitting efficiency and method of producing same Pending JPS52152187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,639A CA1058732A (en) 1976-06-11 1976-06-11 Light emitting diodes with increased light emission efficiency

Publications (1)

Publication Number Publication Date
JPS52152187A true JPS52152187A (en) 1977-12-17

Family

ID=4106191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6054177A Pending JPS52152187A (en) 1976-06-11 1977-05-26 Light emitting diode having increased light emitting efficiency and method of producing same

Country Status (7)

Country Link
JP (1) JPS52152187A (en)
CA (1) CA1058732A (en)
DE (1) DE2719567A1 (en)
ES (1) ES459664A1 (en)
FR (1) FR2354638A1 (en)
NL (1) NL7705246A (en)
SE (1) SE7706625L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825053U (en) * 1981-08-11 1983-02-17 住友電気工業株式会社 Hybrid IC

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142988A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Photo semiconductor device
FR2466866A1 (en) * 1979-10-05 1981-04-10 Thomson Csf METHOD OF COUPLING BETWEEN AN OPTICAL FIBER AND AN OPTOELECTRONIC DIODE, AND A TRANSMITTING OR RECEPTION HEAD, REALIZED BY THIS METHOD
CA1139412A (en) * 1980-09-10 1983-01-11 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
DE3605019A1 (en) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Integrated light-emitting diode for optical-fibre transmission lines and method of producing it
DE4218806A1 (en) * 1992-06-06 1993-12-09 Telefunken Microelectron Mesa luminescence semiconductor element
DE4305296C3 (en) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Method of manufacturing a radiation emitting diode
DE19506323A1 (en) * 1995-02-23 1996-08-29 Siemens Ag Semiconductor device with roughened semiconductor surface
DE19537545A1 (en) 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode manufacturing method with layer group contg. pre-junction
DE19537544A1 (en) * 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825053U (en) * 1981-08-11 1983-02-17 住友電気工業株式会社 Hybrid IC

Also Published As

Publication number Publication date
CA1058732A (en) 1979-07-17
DE2719567A1 (en) 1977-12-22
FR2354638A1 (en) 1978-01-06
SE7706625L (en) 1977-12-12
ES459664A1 (en) 1978-04-16
NL7705246A (en) 1977-12-13

Similar Documents

Publication Publication Date Title
JPS53138689A (en) Method of producing light emitting diode
JPS5334486A (en) Light emitting gallium semiconductor device and method of producing same
GB2043340B (en) Light emitting diode and method of making the same
EP0078037A3 (en) Light emission diode lamp and method for producing thereof
JPS52126188A (en) Flexible electroluminescent lamp and method of producing same
JPS5411691A (en) Luminous and light receiving diode
EP0102734A3 (en) Pure green light emitting diodes and method of manufacturing the same
JPS53128289A (en) Light emitting semiconductor device* method of producing same and method of driving same
JPS54126490A (en) Light emission diode assembly and method of fabricating same
JPS545394A (en) Method of producing diode laser
DE3465150D1 (en) Light emitting diode array and method of producing the same
JPS52152187A (en) Light emitting diode having increased light emitting efficiency and method of producing same
JPS5778787A (en) Method of producing socket of light emtting diode
GB2025134B (en) Light emitting diode
JPS5534497A (en) Indicating light emitting diode array and method of manufacturing same
JPS57152185A (en) Method of producing light emitting diode or laser diode
JPS5275285A (en) Light emitting diode assembly
JPS5728380A (en) Surface radiation type light emitting diode and method of producing same
JPS57128080A (en) P-n junction diode and method of producing same
JPS536591A (en) Pattern display light emitting diode and method of producing same
GB2022923B (en) Method for the manufacture of light emitting and/or photodefective diodes
JPS5693382A (en) Light emitting diode
JPS5448187A (en) Method of producing light emitting diode array
JPS5347284A (en) Gap light emitting diode
JPS5394784A (en) Light emitting diode array