JPS5295184A - Mis semiconductor unit - Google Patents

Mis semiconductor unit

Info

Publication number
JPS5295184A
JPS5295184A JP1146176A JP1146176A JPS5295184A JP S5295184 A JPS5295184 A JP S5295184A JP 1146176 A JP1146176 A JP 1146176A JP 1146176 A JP1146176 A JP 1146176A JP S5295184 A JPS5295184 A JP S5295184A
Authority
JP
Japan
Prior art keywords
semiconductor unit
mis semiconductor
mis
misic
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1146176A
Other languages
Japanese (ja)
Other versions
JPS606104B2 (en
Inventor
Satoshi Meguro
Yasunobu Osa
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51011461A priority Critical patent/JPS606104B2/en
Publication of JPS5295184A publication Critical patent/JPS5295184A/en
Publication of JPS606104B2 publication Critical patent/JPS606104B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/836—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising EDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the semiconductor unit such as MISIC, C-MIS and high pressure-proof MIS transistor by using the manufacturing process of MOSIC in LOCOS structure.
JP51011461A 1976-02-06 1976-02-06 MIS semiconductor device Expired JPS606104B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51011461A JPS606104B2 (en) 1976-02-06 1976-02-06 MIS semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51011461A JPS606104B2 (en) 1976-02-06 1976-02-06 MIS semiconductor device

Publications (2)

Publication Number Publication Date
JPS5295184A true JPS5295184A (en) 1977-08-10
JPS606104B2 JPS606104B2 (en) 1985-02-15

Family

ID=11778725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51011461A Expired JPS606104B2 (en) 1976-02-06 1976-02-06 MIS semiconductor device

Country Status (1)

Country Link
JP (1) JPS606104B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146578A (en) * 1976-05-28 1977-12-06 Texas Instruments Inc Method of producing resistance element and semiconductor device having same element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111221A (en) * 1985-11-08 1987-05-22 Sumitomo Electric Ind Ltd Optical connector
JPH06250044A (en) * 1993-02-23 1994-09-09 Nippon Telegr & Teleph Corp <Ntt> Optical connector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146578A (en) * 1976-05-28 1977-12-06 Texas Instruments Inc Method of producing resistance element and semiconductor device having same element

Also Published As

Publication number Publication date
JPS606104B2 (en) 1985-02-15

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