JPS5384691A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5384691A JPS5384691A JP16064976A JP16064976A JPS5384691A JP S5384691 A JPS5384691 A JP S5384691A JP 16064976 A JP16064976 A JP 16064976A JP 16064976 A JP16064976 A JP 16064976A JP S5384691 A JPS5384691 A JP S5384691A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- axis direction
- semiconductor substrate
- crystal axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase density of gate channels by implanting ions parallel to the crystal axis direction of a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064976A JPS5384691A (en) | 1976-12-29 | 1976-12-29 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064976A JPS5384691A (en) | 1976-12-29 | 1976-12-29 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5384691A true JPS5384691A (en) | 1978-07-26 |
Family
ID=15719488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16064976A Pending JPS5384691A (en) | 1976-12-29 | 1976-12-29 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5384691A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
-
1976
- 1976-12-29 JP JP16064976A patent/JPS5384691A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52128066A (en) | Manufacture of semiconductor device | |
| JPS5226179A (en) | Semi-conductor unit | |
| JPS5419372A (en) | Production of semiconductor memory | |
| JPS53119686A (en) | Production of semiconductor device | |
| JPS5253658A (en) | Method of introducing impurity into semiconductor | |
| JPS5384691A (en) | Production of semiconductor device | |
| JPS5363871A (en) | Production of semiconductor device | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS5348458A (en) | Production of semiconductor device | |
| JPS51121272A (en) | Manufacturing method for semiconductor devices | |
| JPS53138284A (en) | Manufacture for semiconductor part | |
| JPS5339884A (en) | Production of insulated gate type semiconductor | |
| JPS53123678A (en) | Manufacture of field effect semiconductor device of insulation gate type | |
| JPS52153383A (en) | Preparation of semiconductor device | |
| JPS534477A (en) | Production of semiconductor device | |
| JPS5278381A (en) | Production of field effect semiconductor device | |
| JPS5363866A (en) | Production of semiconductor device | |
| JPS5372567A (en) | Semiconductor device | |
| JPS53125776A (en) | Manufacture for semiconductor device | |
| JPS5348457A (en) | Production of semiconductor element | |
| JPS5211762A (en) | Method of manufacturing semiconductor devices | |
| JPS53100779A (en) | Production of insulated gate type semiconductor device | |
| JPS535580A (en) | Field effect type semiconductor device | |
| JPS5382181A (en) | Manufacture for semiconductor device | |
| JPS52109368A (en) | Semiconductor device |