JPS5396685A - Electron avalanche transit time diode - Google Patents

Electron avalanche transit time diode

Info

Publication number
JPS5396685A
JPS5396685A JP821378A JP821378A JPS5396685A JP S5396685 A JPS5396685 A JP S5396685A JP 821378 A JP821378 A JP 821378A JP 821378 A JP821378 A JP 821378A JP S5396685 A JPS5396685 A JP S5396685A
Authority
JP
Japan
Prior art keywords
transit time
electron avalanche
time diode
avalanche transit
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP821378A
Other languages
English (en)
Inventor
Derajiyuboodofu Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5396685A publication Critical patent/JPS5396685A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
JP821378A 1977-01-28 1978-01-27 Electron avalanche transit time diode Pending JPS5396685A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7702454A FR2379169A1 (fr) 1977-01-28 1977-01-28 Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode

Publications (1)

Publication Number Publication Date
JPS5396685A true JPS5396685A (en) 1978-08-24

Family

ID=9186032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP821378A Pending JPS5396685A (en) 1977-01-28 1978-01-27 Electron avalanche transit time diode

Country Status (5)

Country Link
US (1) US4176366A (ja)
JP (1) JPS5396685A (ja)
DE (1) DE2803612A1 (ja)
FR (1) FR2379169A1 (ja)
GB (1) GB1579991A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
DE3725214A1 (de) * 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode
US5168328A (en) * 1990-07-03 1992-12-01 Litton Systems, Inc. Heterojunction impatt diode
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices

Also Published As

Publication number Publication date
DE2803612A1 (de) 1978-08-03
GB1579991A (en) 1980-11-26
FR2379169A1 (fr) 1978-08-25
FR2379169B1 (ja) 1982-01-08
US4176366A (en) 1979-11-27

Similar Documents

Publication Publication Date Title
ZA782744B (en) An improved freight carrier
GB2005508B (en) Others doppler radar divece
MY8500787A (en) Deflecting device for cathode ray-tube
ZA783706B (en) Container latching arrangement
JPS5323593A (en) Radar
JPS53117199A (en) Electron scatterer
JPS5323289A (en) Radar
JPS5475995A (en) Electron avalanche photodiode
GB2002579B (en) Avalanche diode
GB2003357B (en) Mapping radar
JPS5413754A (en) Diode oscillator
JPS52110298A (en) Emission alkali earth fluorosilicate
JPS5285495A (en) Radar
JPS52125296A (en) Pulse radar receiver
JPS52153691A (en) Radar
JPS51140587A (en) Avalanche photodiode
JPS5396685A (en) Electron avalanche transit time diode
JPS5323288A (en) Radar
JPS5463981A (en) Envelope
JPS53110396A (en) Radar
JPS53124078A (en) Electron beam device
JPS5337397A (en) Radar
JPS52111395A (en) Fmmcw radar
JPS53113493A (en) Radar
JPS548990A (en) Avalanche diode