JPS5397783A - Fet pentode transistor - Google Patents

Fet pentode transistor

Info

Publication number
JPS5397783A
JPS5397783A JP1203778A JP1203778A JPS5397783A JP S5397783 A JPS5397783 A JP S5397783A JP 1203778 A JP1203778 A JP 1203778A JP 1203778 A JP1203778 A JP 1203778A JP S5397783 A JPS5397783 A JP S5397783A
Authority
JP
Japan
Prior art keywords
pentode
fet
transistor
pentode transistor
fet pentode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1203778A
Other languages
English (en)
Inventor
Ii Deikenzu Roorenzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5397783A publication Critical patent/JPS5397783A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP1203778A 1977-02-07 1978-02-07 Fet pentode transistor Pending JPS5397783A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/766,401 US4104673A (en) 1977-02-07 1977-02-07 Field effect pentode transistor

Publications (1)

Publication Number Publication Date
JPS5397783A true JPS5397783A (en) 1978-08-26

Family

ID=25076334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1203778A Pending JPS5397783A (en) 1977-02-07 1978-02-07 Fet pentode transistor

Country Status (2)

Country Link
US (1) US4104673A (ja)
JP (1) JPS5397783A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263249A (ja) * 1985-05-17 1986-11-21 Nec Corp 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107583A (en) * 1980-01-30 1981-08-26 Matsushita Electric Ind Co Ltd Field effect transistor
CA1200326A (en) * 1982-11-26 1986-02-04 Franco N. Sechi High-power dual-gate field-effect transistor
DE69125306T2 (de) * 1990-04-18 1997-10-30 Fujitsu Ltd Halbleiteranordnung mit einer Struktur zur Beschleunigung von Ladungsträgern
JP3499103B2 (ja) * 1997-02-21 2004-02-23 三菱電機株式会社 半導体装置
GB2533767B (en) * 2014-12-16 2019-06-19 Leonardo Mw Ltd Integrated circuits and methods of manufacturing.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4852483A (ja) * 1971-10-29 1973-07-23
JPS51112184A (en) * 1975-02-26 1976-10-04 Nec Corp Shottky barrier layer gate type twine gates field-effect transistor an d its making

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH477779A (de) * 1968-12-20 1969-08-31 Ibm Verzögerungseinrichtung für elektrische Signale
US3699408A (en) * 1970-01-23 1972-10-17 Nippon Electric Co Gallium-arsenide schottky barrier type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4852483A (ja) * 1971-10-29 1973-07-23
JPS51112184A (en) * 1975-02-26 1976-10-04 Nec Corp Shottky barrier layer gate type twine gates field-effect transistor an d its making

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263249A (ja) * 1985-05-17 1986-11-21 Nec Corp 半導体装置

Also Published As

Publication number Publication date
US4104673A (en) 1978-08-01

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