JPS5466785A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5466785A
JPS5466785A JP13306777A JP13306777A JPS5466785A JP S5466785 A JPS5466785 A JP S5466785A JP 13306777 A JP13306777 A JP 13306777A JP 13306777 A JP13306777 A JP 13306777A JP S5466785 A JPS5466785 A JP S5466785A
Authority
JP
Japan
Prior art keywords
region
gate
current
potential
mua
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13306777A
Other languages
Japanese (ja)
Other versions
JPS6129548B2 (en
Inventor
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13306777A priority Critical patent/JPS5466785A/en
Publication of JPS5466785A publication Critical patent/JPS5466785A/en
Publication of JPS6129548B2 publication Critical patent/JPS6129548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain the IC including I<2>L having sufficient operating margin, by preventing the lifting up of ground line. CONSTITUTION:The regions 1a and 2a of the N type epitaxial layer are isolated with isolation diffusion region 1, and longitudinal NPN transistor and transversal PNP taansistor are provided in these regions, and the I<2>L gate circuit is constituted by taking the collector of PNP element and the base of NPN element common. Thus, the region 1a is operated in high speed more than 1 MHz, the current of several tens to several hundreds muA per I<2>L gate is flowed, the region 2 is operated in low speed and the current is taken around 1 muA per gate. With this constitution, the potential at the epitaxial layer of the region 1a remote from the ground line 2 connected to the ground pad 4 is increased, but the current consumption flowed to the region 2b is slight, then the potential fluctuation of the region 2b by the resistance of the wiring 3 is less as if it is negligible and no potential increase is caused.
JP13306777A 1977-11-08 1977-11-08 Semiconductor integrated circuit device Granted JPS5466785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13306777A JPS5466785A (en) 1977-11-08 1977-11-08 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13306777A JPS5466785A (en) 1977-11-08 1977-11-08 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5466785A true JPS5466785A (en) 1979-05-29
JPS6129548B2 JPS6129548B2 (en) 1986-07-07

Family

ID=15096054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13306777A Granted JPS5466785A (en) 1977-11-08 1977-11-08 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5466785A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55107256A (en) * 1979-02-08 1980-08-16 Mitsubishi Electric Corp Iil integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55107256A (en) * 1979-02-08 1980-08-16 Mitsubishi Electric Corp Iil integrated circuit device

Also Published As

Publication number Publication date
JPS6129548B2 (en) 1986-07-07

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