JPS5468169A - Plasma processor of capacitor type - Google Patents
Plasma processor of capacitor typeInfo
- Publication number
- JPS5468169A JPS5468169A JP13465177A JP13465177A JPS5468169A JP S5468169 A JPS5468169 A JP S5468169A JP 13465177 A JP13465177 A JP 13465177A JP 13465177 A JP13465177 A JP 13465177A JP S5468169 A JPS5468169 A JP S5468169A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- capacitor type
- plasma processing
- excited
- dispersion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 239000007789 gas Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- 239000006185 dispersion Substances 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To establish the unit in which the plasma processing rich in mass-production and absent in the dispersion in the quality can be made, by not inserting the processed material between the capacitor type electrode plates. CONSTITUTION:The reaction gas inlet 18 is placed on the processed body 13 to supply the reaction gas 20 excited in uniform plasma to the processed body 13, the gas dispersion operator 22 diffusing the gas 20 uniformly is inserted under the supply inlet 18 as required, and the capacitor type electrode plate 10 plasma exciting the gas 20 is placed. Further, the plasma processing is made with the gas 20 excited with the electrode 10. Accordingly, since the processed material is not inserted between the capacitor type electodes, even if high power is applied between the electrodes and plasma processing speed is increased, no electric damage is given to the processes material. Further, the reaction gas uniformly excited is fed to the processed material and the dispersion in the plasma processing can be avoided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13465177A JPS5468169A (en) | 1977-11-11 | 1977-11-11 | Plasma processor of capacitor type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13465177A JPS5468169A (en) | 1977-11-11 | 1977-11-11 | Plasma processor of capacitor type |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24198183A Division JPS59145533A (en) | 1983-12-23 | 1983-12-23 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5468169A true JPS5468169A (en) | 1979-06-01 |
| JPS616536B2 JPS616536B2 (en) | 1986-02-27 |
Family
ID=15133346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13465177A Granted JPS5468169A (en) | 1977-11-11 | 1977-11-11 | Plasma processor of capacitor type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5468169A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146876A (en) * | 1980-01-16 | 1981-11-14 | Nat Res Dev | Adhering method and apparatus |
| JPS58117869A (en) * | 1981-12-28 | 1983-07-13 | Toshiba Corp | Film forming device |
| JPS594028A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Manufacturing device of semiconductor |
-
1977
- 1977-11-11 JP JP13465177A patent/JPS5468169A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146876A (en) * | 1980-01-16 | 1981-11-14 | Nat Res Dev | Adhering method and apparatus |
| JPS58117869A (en) * | 1981-12-28 | 1983-07-13 | Toshiba Corp | Film forming device |
| JPS594028A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Manufacturing device of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS616536B2 (en) | 1986-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910012328A (en) | Plasma processing equipment | |
| GB1446500A (en) | Corona discharge method of depleting alkali metal ions from a glass surface region | |
| ES447505A1 (en) | Method for feeding reactant gas to fuel cells in a stack and apparatus therefor | |
| DE3064562D1 (en) | An apparatus for controlling the electrical parameters of an electrode reaction in an electrochemical cell | |
| EP0364215A3 (en) | Plasma etching apparatus | |
| JPS5468169A (en) | Plasma processor of capacitor type | |
| JPS5676242A (en) | Treating apparatus using gas plasma reaction | |
| JPS5216482A (en) | Surface treatment apparatus using activated gas | |
| JPS5747866A (en) | Surface treatment by electric glow discharge | |
| JPS5645761A (en) | Plasma reaction apparatus | |
| JPS5610932A (en) | Plasma treating apparatus | |
| JPS53143170A (en) | Condenser type gas plasma treating apparatus | |
| JPS54112095A (en) | Electrolytic grinding device | |
| JPS6424835A (en) | Discharge process and apparatus for modifying surface of solid | |
| DK0486543T3 (en) | Process for preparing an electrosuspension of microparticles | |
| JPS6423537A (en) | Plasma processing device | |
| JPS6467873A (en) | Electrode basic material | |
| JPS5591980A (en) | Plasma treating apparatus | |
| JPS5794565A (en) | Surface treatment of pipe | |
| JPS5732637A (en) | Dry etching apparatus | |
| JPS5685827A (en) | Plasma etching treating method and treatment device | |
| JPS57131363A (en) | Ion plating device | |
| JPS5687671A (en) | Dry etching apparatus | |
| JPS54100910A (en) | Method and apparatus for glow discharge processing | |
| JPS54109391A (en) | Etching method |