JPS55120132A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS55120132A
JPS55120132A JP15628279A JP15628279A JPS55120132A JP S55120132 A JPS55120132 A JP S55120132A JP 15628279 A JP15628279 A JP 15628279A JP 15628279 A JP15628279 A JP 15628279A JP S55120132 A JPS55120132 A JP S55120132A
Authority
JP
Japan
Prior art keywords
heat
layer
treatment
gaas
stable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15628279A
Other languages
Japanese (ja)
Inventor
Yukihide Watanabe
Shunji Otani
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15628279A priority Critical patent/JPS55120132A/en
Publication of JPS55120132A publication Critical patent/JPS55120132A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a thermally stable and highly reliable Schottky barrier diode by stacking Ti, Mo (or W or Cr), Au (or Al) on an n-type GaAs substrate and performing heat-treatment in specified atmosphere. CONSTITUTION:An opening hole is made in an insulating film 2 on an n-type GaAs substrate 3; a Ti layer 4, an Mo layer 5, and an Au layer 6 are stacked; and an electrode is formed by selective etching. Then, heat-treatment is performed in H2, N2, Ar, mixed gas thereof, or vacuum at the temperature form 250 deg.C-500 deg.C, and a stable alloy layer of Ti and GaAs is formed. The time of heat-treatment is determined so that Mo does not reach GaAs surface. A Schottky barrier junction is formed between Ti and GaAs. Mo prevents the direct reaction of Au and Ti and controls the diffusion of Ga to the outside, thereby heat resistance and reliability can be improved. This semiconductor element is very stable and is more heat-resistant and reliable than the conventional semiconductor elements.
JP15628279A 1979-11-30 1979-11-30 Manufacture of semiconductor element Pending JPS55120132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15628279A JPS55120132A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15628279A JPS55120132A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1194776A Division JPS5294773A (en) 1976-02-05 1976-02-05 Semiconductor element and its manufacture

Publications (1)

Publication Number Publication Date
JPS55120132A true JPS55120132A (en) 1980-09-16

Family

ID=15624406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15628279A Pending JPS55120132A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS55120132A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835919A (en) * 1981-08-28 1983-03-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of metal-semiconductor junction electrode
JPS5864066A (en) * 1981-10-14 1983-04-16 Nippon Telegr & Teleph Corp <Ntt> Metal semiconductor junction electrode structure and manufacture thereof
US4673593A (en) * 1984-03-07 1987-06-16 Sumitomo Electric Industries Ltd. Process for forming an ohmic electrode on a p-type III-V compound semiconductor
US5387548A (en) * 1992-06-22 1995-02-07 Motorola, Inc. Method of forming an etched ohmic contact
US5459087A (en) * 1992-08-03 1995-10-17 Nec Corporation Method of fabricating a multi-layer gate electrode with annealing step

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131764A (en) * 1974-04-05 1975-10-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131764A (en) * 1974-04-05 1975-10-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835919A (en) * 1981-08-28 1983-03-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of metal-semiconductor junction electrode
JPS5864066A (en) * 1981-10-14 1983-04-16 Nippon Telegr & Teleph Corp <Ntt> Metal semiconductor junction electrode structure and manufacture thereof
US4673593A (en) * 1984-03-07 1987-06-16 Sumitomo Electric Industries Ltd. Process for forming an ohmic electrode on a p-type III-V compound semiconductor
US5387548A (en) * 1992-06-22 1995-02-07 Motorola, Inc. Method of forming an etched ohmic contact
US5459087A (en) * 1992-08-03 1995-10-17 Nec Corporation Method of fabricating a multi-layer gate electrode with annealing step

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