JPS55158689A - Semiconductor light emitting device and manufacture thereof - Google Patents

Semiconductor light emitting device and manufacture thereof

Info

Publication number
JPS55158689A
JPS55158689A JP6730579A JP6730579A JPS55158689A JP S55158689 A JPS55158689 A JP S55158689A JP 6730579 A JP6730579 A JP 6730579A JP 6730579 A JP6730579 A JP 6730579A JP S55158689 A JPS55158689 A JP S55158689A
Authority
JP
Japan
Prior art keywords
xalxas
edge
layer
type
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6730579A
Other languages
Japanese (ja)
Other versions
JPS589592B2 (en
Inventor
Yukihiro Sasaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP54067305A priority Critical patent/JPS589592B2/en
Publication of JPS55158689A publication Critical patent/JPS55158689A/en
Publication of JPS589592B2 publication Critical patent/JPS589592B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a stable single-lateral-mode oscillation by cutting out a portion of a current blocking layer provided between a semiconductor substrate and a lower clad layer in a stripe shape by the top of an edge-shaped mesa portion formed on the main surface of the substrate. CONSTITUTION:A (100) surface of an n-type GaAs substrate 20 is etched by liquid of H3PO4+H2O2, and an edge-shaped mesa 28 with a triangular cross section having a (111) surface in the direction of <00-1> is formed. Then, a p-type Ga1-xAlxAs current blocking layer 21 is formed, and a portion of said layer 21 is cut with a mesa top 29. Then, n-type Ga1-xAlxAs 22, a p type GaAs active layer 23, Ga1-xAlxAs 24, and p-type GaAs 25 are stacked, and electrodes 26 and 27 are attached. In this constitution, layers 21-25 can be formed by one continuous epitaxial growth, the active layer is not exposed to the external air, defects are not generated, a cutout portion 29 can be readily formed with the edge-shaped area, the currents can be effectively concentrated, and the single lateral-mode oscillation can be stably performed.
JP54067305A 1979-05-30 1979-05-30 Method for manufacturing semiconductor light emitting device Expired JPS589592B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54067305A JPS589592B2 (en) 1979-05-30 1979-05-30 Method for manufacturing semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54067305A JPS589592B2 (en) 1979-05-30 1979-05-30 Method for manufacturing semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS55158689A true JPS55158689A (en) 1980-12-10
JPS589592B2 JPS589592B2 (en) 1983-02-22

Family

ID=13341159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54067305A Expired JPS589592B2 (en) 1979-05-30 1979-05-30 Method for manufacturing semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS589592B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118687A (en) * 1981-01-16 1982-07-23 Sumitomo Electric Ind Ltd Manufacture of semiconductor laser
EP0454476A2 (en) 1990-04-26 1991-10-30 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing the same
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
JPH06120618A (en) * 1992-10-05 1994-04-28 Japan Aviation Electron Ind Ltd Semiconductor light emitting element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118687A (en) * 1981-01-16 1982-07-23 Sumitomo Electric Ind Ltd Manufacture of semiconductor laser
EP0454476A2 (en) 1990-04-26 1991-10-30 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing the same
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
JPH06120618A (en) * 1992-10-05 1994-04-28 Japan Aviation Electron Ind Ltd Semiconductor light emitting element

Also Published As

Publication number Publication date
JPS589592B2 (en) 1983-02-22

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