JPS5515940A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS5515940A
JPS5515940A JP8680878A JP8680878A JPS5515940A JP S5515940 A JPS5515940 A JP S5515940A JP 8680878 A JP8680878 A JP 8680878A JP 8680878 A JP8680878 A JP 8680878A JP S5515940 A JPS5515940 A JP S5515940A
Authority
JP
Japan
Prior art keywords
substrate
soln
growing method
crystals
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8680878A
Other languages
Japanese (ja)
Inventor
Koichi Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8680878A priority Critical patent/JPS5515940A/en
Publication of JPS5515940A publication Critical patent/JPS5515940A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow an epitaxial layer of a uniform thickness by a liuyid phase growing method by putting a lid covering the surface of a soln. and by forming the under surface of the lid into an inclined or curved surface canceling the thickness distribution of crystals on a substrate.
CONSTITUTION: Soln. 12 for growth is housed in the opening of slider 11 sliding on support stand 10 provided with a recess holding substrate 2. The upper surface of soln. 12 is covered with interlocking type lid 13 with a predetermined inclined or curved under surface canceling the thickness distribution of crystals on substrate 2. A cpd. semiconductor and mixed crystals thereof are grown on substrate 2.
COPYRIGHT: (C)1980,JPO&Japio
JP8680878A 1978-07-18 1978-07-18 Liquid phase epitaxial growing method Pending JPS5515940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8680878A JPS5515940A (en) 1978-07-18 1978-07-18 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8680878A JPS5515940A (en) 1978-07-18 1978-07-18 Liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5515940A true JPS5515940A (en) 1980-02-04

Family

ID=13897101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8680878A Pending JPS5515940A (en) 1978-07-18 1978-07-18 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5515940A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589060U (en) * 1981-07-08 1983-01-20 三菱電機株式会社 Rotating electric machine end enclosure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589060U (en) * 1981-07-08 1983-01-20 三菱電機株式会社 Rotating electric machine end enclosure

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