JPS5527612A - Silicon base - Google Patents

Silicon base

Info

Publication number
JPS5527612A
JPS5527612A JP10045678A JP10045678A JPS5527612A JP S5527612 A JPS5527612 A JP S5527612A JP 10045678 A JP10045678 A JP 10045678A JP 10045678 A JP10045678 A JP 10045678A JP S5527612 A JPS5527612 A JP S5527612A
Authority
JP
Japan
Prior art keywords
concentration
silicon base
range
specifying
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10045678A
Other languages
Japanese (ja)
Inventor
Yojiro Kondo
Kazunori Tanitsu
Katsu Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP10045678A priority Critical patent/JPS5527612A/en
Publication of JPS5527612A publication Critical patent/JPS5527612A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain IG (intrinsic gettering) of good reproducibility, by specifying not only the concentration of oxygen but also the range of concentration for other impurities.
CONSTITUTION: The range of concentration of O2 is specified less than 2×1018 atoms/cm3 for a part or the whole of a Si base consisting mainly of single crystal silicon. To this is added at least one or two of C, Ge, Sn and Pb whose concentration is more than 5% of the above-described concentration of O2.
COPYRIGHT: (C)1980,JPO&Japio
JP10045678A 1978-08-19 1978-08-19 Silicon base Pending JPS5527612A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10045678A JPS5527612A (en) 1978-08-19 1978-08-19 Silicon base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045678A JPS5527612A (en) 1978-08-19 1978-08-19 Silicon base

Publications (1)

Publication Number Publication Date
JPS5527612A true JPS5527612A (en) 1980-02-27

Family

ID=14274410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045678A Pending JPS5527612A (en) 1978-08-19 1978-08-19 Silicon base

Country Status (1)

Country Link
JP (1) JPS5527612A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567576A (en) * 1981-10-02 1986-01-28 Shin-Etsu Chemical Co., Ltd. Method for producing a magnetic bias field
JPS61166905A (en) * 1985-01-16 1986-07-28 Sumitomo Special Metals Co Ltd Production of raw material powder for permanent magnet
JPS6227506A (en) * 1985-07-26 1987-02-05 Sumitomo Special Metals Co Ltd Production of alloy powder for rare earth-boron-ferrous permanent magnet
JPS6227505A (en) * 1985-07-26 1987-02-05 Sumitomo Special Metals Co Ltd Production of rare earth alloy powder
JPH06340903A (en) * 1993-02-24 1994-12-13 Hitachi Metals Ltd Production of rare-earth permanent magnet raw powder
WO2016157935A1 (en) * 2015-04-02 2016-10-06 三菱電機株式会社 Method for manufacturing power semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567576A (en) * 1981-10-02 1986-01-28 Shin-Etsu Chemical Co., Ltd. Method for producing a magnetic bias field
JPS61166905A (en) * 1985-01-16 1986-07-28 Sumitomo Special Metals Co Ltd Production of raw material powder for permanent magnet
JPS6227506A (en) * 1985-07-26 1987-02-05 Sumitomo Special Metals Co Ltd Production of alloy powder for rare earth-boron-ferrous permanent magnet
JPS6227505A (en) * 1985-07-26 1987-02-05 Sumitomo Special Metals Co Ltd Production of rare earth alloy powder
JPH06340903A (en) * 1993-02-24 1994-12-13 Hitachi Metals Ltd Production of rare-earth permanent magnet raw powder
WO2016157935A1 (en) * 2015-04-02 2016-10-06 三菱電機株式会社 Method for manufacturing power semiconductor device
JPWO2016157935A1 (en) * 2015-04-02 2017-04-27 三菱電機株式会社 Method for manufacturing power semiconductor device

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