JPS5533073A - High frequency transistor - Google Patents

High frequency transistor

Info

Publication number
JPS5533073A
JPS5533073A JP10637678A JP10637678A JPS5533073A JP S5533073 A JPS5533073 A JP S5533073A JP 10637678 A JP10637678 A JP 10637678A JP 10637678 A JP10637678 A JP 10637678A JP S5533073 A JPS5533073 A JP S5533073A
Authority
JP
Japan
Prior art keywords
high frequency
negative feedback
emitter
resistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10637678A
Other languages
Japanese (ja)
Other versions
JPS6159533B2 (en
Inventor
Michio Irie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10637678A priority Critical patent/JPS5533073A/en
Publication of JPS5533073A publication Critical patent/JPS5533073A/en
Publication of JPS6159533B2 publication Critical patent/JPS6159533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits

Landscapes

  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To approach the operation of the high frequency amplifier circuit of an emitter negative feedback circuit of a high frequency transistor to design value by reducing largely the parasitic inductance by containing negative feedback resistor in a transistor package. CONSTITUTION:There are formed a collector conductive layer 7 and a base conductive layer 8 on an insulating substrate 6 and emitter conductive layers 9a, 9b interposed between the layer 7 and the layer 8. The layers 9a, 9b are connected by a resistor 19, and an emitter electrode 15 is connected via a metallic fine wire 16 to the resistor 19. According to this configuration, since the parasitic inductance of the emitter negative feedback circuit is only the inductance 20 of the wire 15, it becomes very low so that the operation of the high frequency amplifier circuit is approached to the design value rather than the use of the outer negative feedback resistor.
JP10637678A 1978-08-30 1978-08-30 High frequency transistor Granted JPS5533073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10637678A JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10637678A JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Publications (2)

Publication Number Publication Date
JPS5533073A true JPS5533073A (en) 1980-03-08
JPS6159533B2 JPS6159533B2 (en) 1986-12-17

Family

ID=14431987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10637678A Granted JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Country Status (1)

Country Link
JP (1) JPS5533073A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130355U (en) * 1981-01-31 1982-08-13
JPS59165439A (en) * 1983-03-09 1984-09-18 Fujitsu Ltd Package for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130355U (en) * 1981-01-31 1982-08-13
JPS59165439A (en) * 1983-03-09 1984-09-18 Fujitsu Ltd Package for semiconductor device

Also Published As

Publication number Publication date
JPS6159533B2 (en) 1986-12-17

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