JPS553658A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS553658A
JPS553658A JP7599378A JP7599378A JPS553658A JP S553658 A JPS553658 A JP S553658A JP 7599378 A JP7599378 A JP 7599378A JP 7599378 A JP7599378 A JP 7599378A JP S553658 A JPS553658 A JP S553658A
Authority
JP
Japan
Prior art keywords
junction
type
layer
element semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7599378A
Other languages
Japanese (ja)
Inventor
Masanori Ito
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7599378A priority Critical patent/JPS553658A/en
Publication of JPS553658A publication Critical patent/JPS553658A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To provide a low noise avalanche photodiode, InGaAsP four-element semiconductor is used and the region between light incident surface of the semiconductor and pn juction surface is made p-type layer having a specific thickness.
CONSTITUTION: Low impurity InGaAsP four-element semiconductor layer 2 having Pn junction 4 is epitaxially grown on conductive type, high impurity InP 2-element semiconductor substrate 1. Another conductive-type high impuriry semiconductor layer 3 is formed on the layer 2. The surface on which light 5 falls and the pn junction 4 define a space 2a, which is made p-type layer. For effective low noise in this structure, the light must be absorbed in amount of more than half in the p-type region 2a of the 4-element semiconductor 2. In other word, the distance d3 indicating the position of pn junction must be selected so that more than 50% of photoexcited electrons from photoexcited carriers should be injected into multiplying area near the pn junction 4, or the distance d3 is selected to be greater than 1μm.
COPYRIGHT: (C)1980,JPO&Japio
JP7599378A 1978-06-23 1978-06-23 Avalanche photodiode Pending JPS553658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7599378A JPS553658A (en) 1978-06-23 1978-06-23 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7599378A JPS553658A (en) 1978-06-23 1978-06-23 Avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS553658A true JPS553658A (en) 1980-01-11

Family

ID=13592303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7599378A Pending JPS553658A (en) 1978-06-23 1978-06-23 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS553658A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

Similar Documents

Publication Publication Date Title
JPS54101688A (en) Optical semiconductor device
KR850008558A (en) Manufacturing method of avalanche photoelectric diode and avalanche photoelectric diode
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
CA2050435A1 (en) Photo-sensing device
JPS553658A (en) Avalanche photodiode
GB1519466A (en) Photodiode detector
JPS5792877A (en) Photo-receiving semiconductor
JPS53136987A (en) Photo diode
JPS577978A (en) Opto-electronic switch
JPS5378181A (en) Semiconductor device and its manufacture
JPS54148486A (en) Semiconductor device
JPS5455189A (en) Photo transistor
JPS54154980A (en) Constant voltage diode
JPS52124888A (en) Production of solar battery
JPS5587007A (en) Semiconductor photo position detector
JPS5513990A (en) Semiconductor device
JPS5428581A (en) Manufacture of semiconductor device
JPS5437486A (en) Manufacture of gallium phosphate green-color luminous element
JPS5310987A (en) Photoelectric transducing semiconductor device
JPS54110792A (en) Avalanche photo diode
KR19990003518A (en) Avalanche Photodiode and Method of Manufacturing the Same
JPS546793A (en) Photo detector of semiconductor
JPS53108794A (en) Photo detector
JPS5333086A (en) Gaas solar battery
JPS5339097A (en) Photo detector