JPS5544767A - Formation of electrode pattern - Google Patents

Formation of electrode pattern

Info

Publication number
JPS5544767A
JPS5544767A JP11827878A JP11827878A JPS5544767A JP S5544767 A JPS5544767 A JP S5544767A JP 11827878 A JP11827878 A JP 11827878A JP 11827878 A JP11827878 A JP 11827878A JP S5544767 A JPS5544767 A JP S5544767A
Authority
JP
Japan
Prior art keywords
substrate
electrode
magnet
metal mask
closely contacted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11827878A
Other languages
Japanese (ja)
Inventor
Katsuaki Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11827878A priority Critical patent/JPS5544767A/en
Publication of JPS5544767A publication Critical patent/JPS5544767A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE: To form an electrode with a given shape through the spattering of a low temperature magnetron with magnetic metal mask closely contacted with a glass substrate by means of a magnet, for cutting down manufacturing process and attaining absolutely no polution.
CONSTITUTION: A metal mask 1 made of the magnetic material from which an electrode forming portion with a given shape is removed by etching is closely contacted with a substrate 2 by means of a magnet 3. Next, in this condition the substrate 2 is set on a low-temperature magnetron spattering system, and electrode material such as In2O3 and SnO2 is spatter-deposited thereon. Consequently, no pollution can be attained since no organic solvent is used at all, and the surface of the substrate can be made very clean since treatment is made in a vaccum tank.
COPYRIGHT: (C)1980,JPO&Japio
JP11827878A 1978-09-26 1978-09-26 Formation of electrode pattern Pending JPS5544767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11827878A JPS5544767A (en) 1978-09-26 1978-09-26 Formation of electrode pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11827878A JPS5544767A (en) 1978-09-26 1978-09-26 Formation of electrode pattern

Publications (1)

Publication Number Publication Date
JPS5544767A true JPS5544767A (en) 1980-03-29

Family

ID=14732690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11827878A Pending JPS5544767A (en) 1978-09-26 1978-09-26 Formation of electrode pattern

Country Status (1)

Country Link
JP (1) JPS5544767A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270827A (en) * 1994-12-21 1995-10-20 Seiko Epson Corp Liquid crystal display manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270827A (en) * 1994-12-21 1995-10-20 Seiko Epson Corp Liquid crystal display manufacturing method

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