JPS5546187A - Infrared ray detection element of photo electromotive force type - Google Patents

Abstract

PURPOSE:To improve the connection resistance and to increase the element sensitivity and response, by providing the connection part of the electrode connected to the inverse conduction type semiconductor layer placed on the semiconductor substrate at the center of the photo detection plane. CONSTITUTION:On the semiconductor substrate of plural alloy such as Hg-Cd-Te, the n-type semiconductor layer 2 is formed by thermal diffusion of Hg to required depth. Next, after thinly etching and removing the surface of substrate as shown in dotted line 5, over the entire surface of the substrate, the insulation layer 12 is formed by evaporating the substance of transmitting and electrically insulating, e.g., ZnS. Further, at the insulation layer 12 on almost the center of the forming region of the n-type semiconductor layer 2 of opposite conduction type, the electrode connection hole d is formed, then the conduction material such as In is selectively evaporated to form the electrode 13 connected to the said n-type semiconductor layer 2. Next, at the back of the substrate 1, e.g., Au is evaporated to form the electrode 4 to establish the photo electromotive force type infrared ray detection element taking the part within the dotted lines 6 as the photo detection plane.