JPS5567129A - Method of epitaxial growth at liquid phase - Google Patents

Method of epitaxial growth at liquid phase

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Publication number
JPS5567129A
JPS5567129A JP14012478A JP14012478A JPS5567129A JP S5567129 A JPS5567129 A JP S5567129A JP 14012478 A JP14012478 A JP 14012478A JP 14012478 A JP14012478 A JP 14012478A JP S5567129 A JPS5567129 A JP S5567129A
Authority
JP
Japan
Prior art keywords
molten
source
boat
ingaas
boats
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14012478A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14012478A priority Critical patent/JPS5567129A/en
Publication of JPS5567129A publication Critical patent/JPS5567129A/en
Pending legal-status Critical Current

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To improve crystallization, by heating molten InGaAs and molten polycrystalline InP to such a temperature that phosophorus is not molten and by bringing the molten substances into contact with each other, thereafter cooling them and measuring the decrement of the polycrystalline InP and by using the molten InGaAs for growth if its atomic ratio is equal to a prescribed value.
CONSTITUTION: A weighed polycrystalline InP source 2 is put in a recess provided on a lower boat 1. A weighed InGaAs 4 is put in a recess of an upper boat 3. These boats are then set in a heating furnace so that the substances in the boats are maintained at a temperature of 650°C. The three component substance 4 is molten first. The boat 3 is slid so that the source 2 and the molten substance 4 are kept in contact with each other for about 30 minutes. The boat 3 is thereafer slid again so that the source 2 and the molten substance 4 are separated from each other. The boats 1, 3 are then taken out of the furnace and cooled to room temperature. The source 2 is picked up so that its decrement is measured. If the atomic composition of composition of a resulting three component crystal is 0.030W0.032 of Ga, 0.914W 0.913 of In and 0.056W0.055 of As, the crystal is used for growth.
COPYRIGHT: (C)1980,JPO&Japio
JP14012478A 1978-11-14 1978-11-14 Method of epitaxial growth at liquid phase Pending JPS5567129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14012478A JPS5567129A (en) 1978-11-14 1978-11-14 Method of epitaxial growth at liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14012478A JPS5567129A (en) 1978-11-14 1978-11-14 Method of epitaxial growth at liquid phase

Publications (1)

Publication Number Publication Date
JPS5567129A true JPS5567129A (en) 1980-05-21

Family

ID=15261450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14012478A Pending JPS5567129A (en) 1978-11-14 1978-11-14 Method of epitaxial growth at liquid phase

Country Status (1)

Country Link
JP (1) JPS5567129A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918630A (en) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd Epitaxial growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918630A (en) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd Epitaxial growth method

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