JPS56120158A - Monolithic semiconductor integrated circuit - Google Patents

Monolithic semiconductor integrated circuit

Info

Publication number
JPS56120158A
JPS56120158A JP1072781A JP1072781A JPS56120158A JP S56120158 A JPS56120158 A JP S56120158A JP 1072781 A JP1072781 A JP 1072781A JP 1072781 A JP1072781 A JP 1072781A JP S56120158 A JPS56120158 A JP S56120158A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
monolithic semiconductor
monolithic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1072781A
Other languages
English (en)
Inventor
Hofuman Kuruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS56120158A publication Critical patent/JPS56120158A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
JP1072781A 1980-01-28 1981-01-27 Monolithic semiconductor integrated circuit Pending JPS56120158A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3002894A DE3002894C2 (de) 1980-01-28 1980-01-28 Monolithisch integrierte Halbleiterschaltung mit Transistoren

Publications (1)

Publication Number Publication Date
JPS56120158A true JPS56120158A (en) 1981-09-21

Family

ID=6093064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1072781A Pending JPS56120158A (en) 1980-01-28 1981-01-27 Monolithic semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US4549096A (ja)
EP (1) EP0033154A3 (ja)
JP (1) JPS56120158A (ja)
DE (1) DE3002894C2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196469A (ja) * 1989-01-25 1990-08-03 Fujitsu Ltd 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670670A (en) * 1984-10-05 1987-06-02 American Telephone And Telegraph Company At&T Bell Laboratories Circuit arrangement for controlling threshold voltages in CMOS circuits
GB2174540B (en) * 1985-05-02 1989-02-15 Texas Instruments Ltd Intergrated circuits
US4670668A (en) * 1985-05-09 1987-06-02 Advanced Micro Devices, Inc. Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up
KR920007535B1 (ko) * 1990-05-23 1992-09-05 삼성전자 주식회사 식별회로를 구비한 반도체 집적회로 칩
JP2619119B2 (ja) * 1990-06-21 1997-06-11 株式会社東芝 半導体集積回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546493A (en) * 1968-09-20 1970-12-08 Gen Motors Corp Variable capacitance direct current regulator circuit
US3634751A (en) * 1971-02-01 1972-01-11 Us Navy Precision voltage regulator
US3806741A (en) * 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
US4004164A (en) * 1975-12-18 1977-01-18 International Business Machines Corporation Compensating current source
JPS5931863B2 (ja) * 1976-01-07 1984-08-04 株式会社日立製作所 電圧出力回路
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
US4260909A (en) * 1978-08-30 1981-04-07 Bell Telephone Laboratories, Incorporated Back gate bias voltage generator circuit
US4256974A (en) * 1978-09-29 1981-03-17 Rockwell International Corporation Metal oxide semiconductor (MOS) input circuit with hysteresis
US4208595A (en) * 1978-10-24 1980-06-17 International Business Machines Corporation Substrate generator
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
US4260946A (en) * 1979-03-22 1981-04-07 Rca Corporation Reference voltage circuit using nested diode means
US4291242A (en) * 1979-05-21 1981-09-22 Motorola, Inc. Driver circuit for use in an output buffer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196469A (ja) * 1989-01-25 1990-08-03 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
US4549096A (en) 1985-10-22
DE3002894C2 (de) 1982-03-18
EP0033154A2 (de) 1981-08-05
DE3002894B1 (de) 1981-07-09
EP0033154A3 (de) 1985-05-15

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