JPS5617313B2 - - Google Patents
Info
- Publication number
- JPS5617313B2 JPS5617313B2 JP7454876A JP7454876A JPS5617313B2 JP S5617313 B2 JPS5617313 B2 JP S5617313B2 JP 7454876 A JP7454876 A JP 7454876A JP 7454876 A JP7454876 A JP 7454876A JP S5617313 B2 JPS5617313 B2 JP S5617313B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752529329 DE2529329C3 (de) | 1975-07-01 | 1975-07-01 | Verfahren zum tiegellosen Zonenschmelzen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS526309A JPS526309A (en) | 1977-01-18 |
| JPS5617313B2 true JPS5617313B2 (da) | 1981-04-21 |
Family
ID=5950392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7454876A Granted JPS526309A (en) | 1975-07-01 | 1976-06-25 | Temperature zone melting process using no crucible |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS526309A (da) |
| BE (1) | BE843542A (da) |
| DE (1) | DE2529329C3 (da) |
| DK (1) | DK147438C (da) |
| FR (1) | FR2315993A1 (da) |
| GB (1) | GB1561112A (da) |
| IT (1) | IT1066271B (da) |
| NL (1) | NL7606167A (da) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866230A (en) * | 1987-04-27 | 1989-09-12 | Shin-Etu Handotai Company, Limited | Method of and apparatus for controlling floating zone of semiconductor rod |
| JPS63307186A (ja) * | 1987-06-05 | 1988-12-14 | Shin Etsu Handotai Co Ltd | 晶出結晶径制御装置 |
| JP3841866B2 (ja) * | 1996-03-04 | 2006-11-08 | 三菱電機株式会社 | 再結晶化材料の製法、その製造装置および加熱方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE631568A (da) * | 1962-04-27 | |||
| FR2238306A2 (en) * | 1972-07-28 | 1975-02-14 | Koudriavtzeff Basile | Oscillating mirror system for TV cameras etc. - has inclined objective mirror driven by rotating disc via linkage rod and slider |
| DE2332968C3 (de) * | 1973-06-28 | 1981-12-10 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes |
| BE795488A (fr) * | 1972-09-28 | 1973-05-29 | Siemens Ag | Procede de fusion par zones sans creuset d'un barreau semi-conducteur |
-
1975
- 1975-07-01 DE DE19752529329 patent/DE2529329C3/de not_active Expired
-
1976
- 1976-06-08 NL NL7606167A patent/NL7606167A/xx not_active Application Discontinuation
- 1976-06-25 JP JP7454876A patent/JPS526309A/ja active Granted
- 1976-06-28 IT IT5018776A patent/IT1066271B/it active
- 1976-06-29 BE BE168424A patent/BE843542A/xx unknown
- 1976-06-30 FR FR7619927A patent/FR2315993A1/fr active Granted
- 1976-06-30 DK DK294076A patent/DK147438C/da not_active IP Right Cessation
- 1976-07-01 GB GB2748276A patent/GB1561112A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE843542A (fr) | 1976-12-29 |
| GB1561112A (en) | 1980-02-13 |
| NL7606167A (nl) | 1977-01-04 |
| DK147438C (da) | 1985-02-11 |
| DE2529329C3 (de) | 1982-06-16 |
| FR2315993A1 (fr) | 1977-01-28 |
| DE2529329B2 (de) | 1978-03-02 |
| IT1066271B (it) | 1985-03-04 |
| DK294076A (da) | 1977-01-02 |
| JPS526309A (en) | 1977-01-18 |
| DE2529329A1 (de) | 1977-01-13 |
| DK147438B (da) | 1984-08-06 |
| FR2315993B1 (da) | 1979-06-22 |