JPS5635471A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5635471A
JPS5635471A JP10786680A JP10786680A JPS5635471A JP S5635471 A JPS5635471 A JP S5635471A JP 10786680 A JP10786680 A JP 10786680A JP 10786680 A JP10786680 A JP 10786680A JP S5635471 A JPS5635471 A JP S5635471A
Authority
JP
Japan
Prior art keywords
film
electrode
gate
aluminum wire
polysilicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10786680A
Other languages
Japanese (ja)
Inventor
Shinichi Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10786680A priority Critical patent/JPS5635471A/en
Publication of JPS5635471A publication Critical patent/JPS5635471A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the preferable ohmic connection between a gate electrode and an aluminum wire by interposing a polysilicon film between the gate electrode of refractory metal such as Mo or the like and the aluminum wire. CONSTITUTION:The gate oxide film 2, polysilicon film 3 and the Mo film 4 are laminated on an Si substrate 1, and a polysilicon film 7 is immediately grown in vapor phase. Thereafter, the films 7, 4 are patterned to form a gate part, with the gate part as a mask a source and drain are formed thereon, a PSG 5 is coated, is patternd, the aluminum wire 6 is formed, and is thus completed. According to this constitution, the preferable ohmic connection is formed between the electrode 4 and the wire 6. Since the electrode 4 is coated with the film 7, it is not oxidized by the later heat treatment, nor sublimated. Inasmuch as the film 4 has a thickness of approx. 2000Angstrom and can prevent transmission of impurity therethrough, it can be utilized in diffusing mask. It is noted that W, V, Hf, Cr and the like may by utilized in addition to the Mo.
JP10786680A 1980-08-06 1980-08-06 Manufacture of semiconductor device Pending JPS5635471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10786680A JPS5635471A (en) 1980-08-06 1980-08-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10786680A JPS5635471A (en) 1980-08-06 1980-08-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635471A true JPS5635471A (en) 1981-04-08

Family

ID=14470056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10786680A Pending JPS5635471A (en) 1980-08-06 1980-08-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635471A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode
JPS60224985A (en) * 1984-04-24 1985-11-09 Yamada Yuki Seizo Kk Variable displacement pump device
US6008869A (en) * 1994-12-14 1999-12-28 Kabushiki Kaisha Toshiba Display device substrate and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519688A (en) * 1974-07-15 1976-01-26 Tokyo Shibaura Electric Co Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519688A (en) * 1974-07-15 1976-01-26 Tokyo Shibaura Electric Co Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode
JPS60224985A (en) * 1984-04-24 1985-11-09 Yamada Yuki Seizo Kk Variable displacement pump device
US6008869A (en) * 1994-12-14 1999-12-28 Kabushiki Kaisha Toshiba Display device substrate and method of manufacturing the same

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