JPS5642348A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5642348A
JPS5642348A JP11825879A JP11825879A JPS5642348A JP S5642348 A JPS5642348 A JP S5642348A JP 11825879 A JP11825879 A JP 11825879A JP 11825879 A JP11825879 A JP 11825879A JP S5642348 A JPS5642348 A JP S5642348A
Authority
JP
Japan
Prior art keywords
film
sio2
cvd process
sih4
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11825879A
Other languages
Japanese (ja)
Other versions
JPS6150378B2 (en
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11825879A priority Critical patent/JPS5642348A/en
Publication of JPS5642348A publication Critical patent/JPS5642348A/en
Publication of JPS6150378B2 publication Critical patent/JPS6150378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a preferable protective film in the semiconductor device by forming an SiO2 film or an Si3N4 film containing P using polyphazene, polyalkoxy- or polyaminophosphazene by a CVD process. CONSTITUTION:An Si3N4PN film is formed by covering therewith an SiO2 film and aluminum wire on an Si substrate and employing mixture gas of [NP(NHCH3)2]n and SiH4 by means of a plasma CVD process. Since this film is softer than the Si3N4 and hardly causes a crack, a thick film having a thickness of approx. 2mum can be employed. SiO2.P2O5.Cl film may be coated by using a mixture gas of (NPCl2)3, O2, and SiH4 by a plasma CVD process. This film has more moisture resistance than the PSG, and can improve the contamination preventive strength by raising the density of the P. Such films are laminated, and thereby there can be obtained a protective film having high reliability.
JP11825879A 1979-09-14 1979-09-14 Semiconductor device Granted JPS5642348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11825879A JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11825879A JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642348A true JPS5642348A (en) 1981-04-20
JPS6150378B2 JPS6150378B2 (en) 1986-11-04

Family

ID=14732162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11825879A Granted JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642348A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178912U (en) * 1985-04-23 1986-11-08
JPS62130797U (en) * 1986-02-07 1987-08-18
JPS6335500U (en) * 1986-08-26 1988-03-07

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178912U (en) * 1985-04-23 1986-11-08
JPS62130797U (en) * 1986-02-07 1987-08-18
JPS6335500U (en) * 1986-08-26 1988-03-07

Also Published As

Publication number Publication date
JPS6150378B2 (en) 1986-11-04

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