JPS5646568A - Manufacture of solid image pickup element - Google Patents

Manufacture of solid image pickup element

Info

Publication number
JPS5646568A
JPS5646568A JP12333579A JP12333579A JPS5646568A JP S5646568 A JPS5646568 A JP S5646568A JP 12333579 A JP12333579 A JP 12333579A JP 12333579 A JP12333579 A JP 12333579A JP S5646568 A JPS5646568 A JP S5646568A
Authority
JP
Japan
Prior art keywords
film
forming
image pickup
solid image
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12333579A
Other languages
Japanese (ja)
Other versions
JPS5928063B2 (en
Inventor
Kazufumi Ogawa
Takao Chikamura
Takuo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54123335A priority Critical patent/JPS5928063B2/en
Priority to US06/188,580 priority patent/US4345021A/en
Publication of JPS5646568A publication Critical patent/JPS5646568A/en
Priority to US06/398,569 priority patent/US4447720A/en
Publication of JPS5928063B2 publication Critical patent/JPS5928063B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

PURPOSE:To eliminate occurrence of defects and adherence of dusts on a solid image pickup element at the time of positional adjustment by evaporating without using a metallic mask when forming a photoelectric film and a transparent electrode forming the solid image pickup element, etching and removing unnecessary portion, thereby forming a desired shape thereat. CONSTITUTION:A picture element portion 20 having photodiodes and transfer BBD elements and a drive circuit 21 having MOS transistors and CCE element are adjacently formed on an Si substrate 19. Subsequently, a number of electrodes 25 making contact with a photoconductive film 26 forming later are formed on the surface of the portion 20, an electrode 24 is formed through an insulating film 22 at one end of the electrodes 25, and a conductive wire portion 23 is formed through the film 22 also on the circuit 21. Thereafter, the film 26 and a transparent electrode 27 are laminated on the entire surface, and a curable resin film pattern 28 is formed on prescribed portion. With the pattern as a mask it is etched, and the unnecessary portions of the film 26 and the electrode 27 are removed. Then, while the pattern 28 is retained, a color filter 30 is mounted thereon with an adhesive 29.
JP54123335A 1979-09-25 1979-09-25 Manufacturing method of solid-state image sensor Expired JPS5928063B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP54123335A JPS5928063B2 (en) 1979-09-25 1979-09-25 Manufacturing method of solid-state image sensor
US06/188,580 US4345021A (en) 1979-09-25 1980-09-18 Solid-state image pickup element and process for fabricating the same
US06/398,569 US4447720A (en) 1979-09-25 1982-07-15 Solid-state image pickup element and process for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54123335A JPS5928063B2 (en) 1979-09-25 1979-09-25 Manufacturing method of solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS5646568A true JPS5646568A (en) 1981-04-27
JPS5928063B2 JPS5928063B2 (en) 1984-07-10

Family

ID=14858004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54123335A Expired JPS5928063B2 (en) 1979-09-25 1979-09-25 Manufacturing method of solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS5928063B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60174132A (en) * 1984-02-20 1985-09-07 キヤノン株式会社 Optical device with photometric function
US4643550A (en) * 1984-04-05 1987-02-17 Olympus Optical Co., Ltd. Photographing indication device for microscopes
JP2007227657A (en) * 2006-02-23 2007-09-06 Fujifilm Corp Solid-state image sensor manufacturing method, solid-state image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60174132A (en) * 1984-02-20 1985-09-07 キヤノン株式会社 Optical device with photometric function
US4643550A (en) * 1984-04-05 1987-02-17 Olympus Optical Co., Ltd. Photographing indication device for microscopes
JP2007227657A (en) * 2006-02-23 2007-09-06 Fujifilm Corp Solid-state image sensor manufacturing method, solid-state image sensor

Also Published As

Publication number Publication date
JPS5928063B2 (en) 1984-07-10

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