JPS5651837A - Semiconductor-measuring apparatus - Google Patents

Semiconductor-measuring apparatus

Info

Publication number
JPS5651837A
JPS5651837A JP12779179A JP12779179A JPS5651837A JP S5651837 A JPS5651837 A JP S5651837A JP 12779179 A JP12779179 A JP 12779179A JP 12779179 A JP12779179 A JP 12779179A JP S5651837 A JPS5651837 A JP S5651837A
Authority
JP
Japan
Prior art keywords
semiconductor element
wafer
laser beam
measured
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12779179A
Other languages
Japanese (ja)
Inventor
Shigeo Furuguchi
Hidekuni Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12779179A priority Critical patent/JPS5651837A/en
Publication of JPS5651837A publication Critical patent/JPS5651837A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To permit the temperature characteristics of a semiconductor element to be accurately and speedily measured by applying a laser beam to the surface of a semiconductor element to be measured. CONSTITUTION:A bias generating circuit 2 is actuated to apply a DC voltage to the oxide film of a semiconductor element at an arbitrary position in a wafer 1, and a shutter 5 is opened to apply a laser beam to the element surface. In the wafer 1, only the semiconductor element to whose surface the lase beam has been applied is heated. Because the laser beam is applied to only one portion of the wafer 1, the temperature of the irradiated portion rapidly rises, as well as the temperature can be accurately controlled. Measuring the capacity by using a capacity meter 3 while heating the semiconductor element permits the contamination degree to be quantitatively measured in a short time.
JP12779179A 1979-10-03 1979-10-03 Semiconductor-measuring apparatus Pending JPS5651837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12779179A JPS5651837A (en) 1979-10-03 1979-10-03 Semiconductor-measuring apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12779179A JPS5651837A (en) 1979-10-03 1979-10-03 Semiconductor-measuring apparatus

Publications (1)

Publication Number Publication Date
JPS5651837A true JPS5651837A (en) 1981-05-09

Family

ID=14968760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12779179A Pending JPS5651837A (en) 1979-10-03 1979-10-03 Semiconductor-measuring apparatus

Country Status (1)

Country Link
JP (1) JPS5651837A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243141A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Semiconductor testing apparatus
JP2009114819A (en) * 2007-11-09 2009-05-28 Ohbayashi Corp Partition structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243141A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Semiconductor testing apparatus
JP2009114819A (en) * 2007-11-09 2009-05-28 Ohbayashi Corp Partition structure

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