JPS5673461A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5673461A JPS5673461A JP15035279A JP15035279A JPS5673461A JP S5673461 A JPS5673461 A JP S5673461A JP 15035279 A JP15035279 A JP 15035279A JP 15035279 A JP15035279 A JP 15035279A JP S5673461 A JPS5673461 A JP S5673461A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- transistor
- constitution
- alxga1
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To integrate a device and miniaturize the device while improving high- frequency characteristics by each forming a semiconductor luminous element on one surface of a semiconductor substrate and a longitudinal transistor for controlling the luminous element on the other surface. CONSTITUTION:An N<-> type layer 5, a P type layer 4 and an N<+> type layer 3 located in the layer 4 are made up on one surface of an N<+> type GaAs substrate 6 and used as a bipolar type transistor. An N<-> type AlxGa1-xAs layer 7, a P type GaAs layer 8, a P type AlxGa1-x layer 9 and a P type GaAs layer 10 are built up on the other surface and employed as a semiconductor laser. A source electrode 1 is attached on the layer 3, base electrodes 2 on the exposing surfaces of the layer 4 and an electrode 11 also on the back of the layer 10 respectively. Or the bipolar transistor in this constitution may be formed in a longitudinal MOSFET. Thus, high integration is enabled without limitation on processes, and excellent characteristics are obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15035279A JPS5673461A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15035279A JPS5673461A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673461A true JPS5673461A (en) | 1981-06-18 |
Family
ID=15495106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15035279A Pending JPS5673461A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673461A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049895A (en) * | 2016-09-21 | 2018-03-29 | 豊田合成株式会社 | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5028286A (en) * | 1973-07-12 | 1975-03-22 | ||
| JPS52147087A (en) * | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Semiconductor light emitting display device |
-
1979
- 1979-11-19 JP JP15035279A patent/JPS5673461A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5028286A (en) * | 1973-07-12 | 1975-03-22 | ||
| JPS52147087A (en) * | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Semiconductor light emitting display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049895A (en) * | 2016-09-21 | 2018-03-29 | 豊田合成株式会社 | Semiconductor device |
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