JPS568821A - Formation of photoresist layer - Google Patents

Formation of photoresist layer

Info

Publication number
JPS568821A
JPS568821A JP8457479A JP8457479A JPS568821A JP S568821 A JPS568821 A JP S568821A JP 8457479 A JP8457479 A JP 8457479A JP 8457479 A JP8457479 A JP 8457479A JP S568821 A JPS568821 A JP S568821A
Authority
JP
Japan
Prior art keywords
photoresist layer
stepwise
thickness
entire surface
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8457479A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Wataru Wakamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8457479A priority Critical patent/JPS568821A/en
Publication of JPS568821A publication Critical patent/JPS568821A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To equalize the thickness of a photoresist on the entire surface by exposing, developing a stepwise pattern with mask or the like and removing the photoresist layer at the portion under the stepwise pattern and forming a photoresist layer on the entire surface. CONSTITUTION:A stepwise semiconductor substrate 1 is formed with a positive type photoresist layer 6 by a spinning method or a spraying method. The layer 6 is exposed through the mask or its reversal mask 7 formed upon formation of the stepwise pattern, is developed to remove the photoresist layer 8 at the portion under the stepwise portion but to retain only the photoresist layer 9. Further, a photoresist layer 10 is formed to eliminate the step of the films between the photoresist layer 11 at the portion above the stepwise portion and the photoresist layer 12 at the portion under the stepwise portion to prevent the reduction in the thickness of a photoresist layer 13 at the shoulder portion so as to equalize the thickness of the film on the entire surface.
JP8457479A 1979-07-02 1979-07-02 Formation of photoresist layer Pending JPS568821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8457479A JPS568821A (en) 1979-07-02 1979-07-02 Formation of photoresist layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8457479A JPS568821A (en) 1979-07-02 1979-07-02 Formation of photoresist layer

Publications (1)

Publication Number Publication Date
JPS568821A true JPS568821A (en) 1981-01-29

Family

ID=13834436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8457479A Pending JPS568821A (en) 1979-07-02 1979-07-02 Formation of photoresist layer

Country Status (1)

Country Link
JP (1) JPS568821A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971896A (en) * 1987-12-08 1990-11-20 Hitachi, Ltd. Method for forming thin film pattern and method for fabricating thin film magnetic head using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971896A (en) * 1987-12-08 1990-11-20 Hitachi, Ltd. Method for forming thin film pattern and method for fabricating thin film magnetic head using the same

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