JPS5693319A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5693319A
JPS5693319A JP16915879A JP16915879A JPS5693319A JP S5693319 A JPS5693319 A JP S5693319A JP 16915879 A JP16915879 A JP 16915879A JP 16915879 A JP16915879 A JP 16915879A JP S5693319 A JPS5693319 A JP S5693319A
Authority
JP
Japan
Prior art keywords
film
resist
substrate
evaporated
electrode material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16915879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0117249B2 (2
Inventor
Kazuya Watari
Kenji Sugishima
Satoshi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16915879A priority Critical patent/JPS5693319A/ja
Publication of JPS5693319A publication Critical patent/JPS5693319A/ja
Publication of JPH0117249B2 publication Critical patent/JPH0117249B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/081Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP16915879A 1979-12-27 1979-12-27 Manufacture of semiconductor device Granted JPS5693319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16915879A JPS5693319A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16915879A JPS5693319A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5693319A true JPS5693319A (en) 1981-07-28
JPH0117249B2 JPH0117249B2 (2) 1989-03-29

Family

ID=15881349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16915879A Granted JPS5693319A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5693319A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124527A (ja) * 1986-11-14 1988-05-28 Nec Corp 半導体装置の製造方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124527A (ja) * 1986-11-14 1988-05-28 Nec Corp 半導体装置の製造方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Also Published As

Publication number Publication date
JPH0117249B2 (2) 1989-03-29

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