JPS57102010A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57102010A
JPS57102010A JP17849480A JP17849480A JPS57102010A JP S57102010 A JPS57102010 A JP S57102010A JP 17849480 A JP17849480 A JP 17849480A JP 17849480 A JP17849480 A JP 17849480A JP S57102010 A JPS57102010 A JP S57102010A
Authority
JP
Japan
Prior art keywords
film
projection
oxide
photoresisting
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17849480A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17849480A priority Critical patent/JPS57102010A/en
Publication of JPS57102010A publication Critical patent/JPS57102010A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask

Landscapes

  • Weting (AREA)

Abstract

PURPOSE:To remove a projection completely to be made into an epitaxial substrate with high smoothness by a method wherein a sensitive film on a projection is selectively removed and only the projection is selectively etched by etching a film oxide. CONSTITUTION:A film oxide 4 is formed on a semiconductor substrate 1 having an epitaxial growth layer 2 and a projection 3 to be further coated with a photoresisting film 5. Next, only the photoresistance on the projection 3 is removed through the O2 plasma treatment to leave the photoresisting film 5a and to leave only the film oxide on the projection 3 by soaking into the etching liquid of a HF system masked by the film 5a for forming a film oxide 4a. Next, only the projection 3 is selectively etched by the CF4 plasma treatment masked by the film 5a and the film 4a. Finally the photoresisting film 5a is removed through the O2 plasma treatment and further the film oxide 4a is removed with the etching liquid of HF system.
JP17849480A 1980-12-17 1980-12-17 Manufacture of semiconductor device Pending JPS57102010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17849480A JPS57102010A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17849480A JPS57102010A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102010A true JPS57102010A (en) 1982-06-24

Family

ID=16049426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17849480A Pending JPS57102010A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102010A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150723A (en) * 1985-12-24 1987-07-04 Sony Corp Manufacture of semiconductor device
JP2008300650A (en) * 2007-05-31 2008-12-11 Sumitomo Electric Ind Ltd Semiconductor optical device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150723A (en) * 1985-12-24 1987-07-04 Sony Corp Manufacture of semiconductor device
JP2008300650A (en) * 2007-05-31 2008-12-11 Sumitomo Electric Ind Ltd Semiconductor optical device manufacturing method

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