JPS5710227A - Manufacture of semiconductor wafer - Google Patents
Manufacture of semiconductor waferInfo
- Publication number
- JPS5710227A JPS5710227A JP8328480A JP8328480A JPS5710227A JP S5710227 A JPS5710227 A JP S5710227A JP 8328480 A JP8328480 A JP 8328480A JP 8328480 A JP8328480 A JP 8328480A JP S5710227 A JPS5710227 A JP S5710227A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- base
- ingredients
- melt
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To precisely epitaxially grow a layer by forming many growing melts by using a boat formed of a supporting base having many particle dividing pores, a solution discharging hole and a substrate holding hole. CONSTITUTION:Four ingredients In, Ga, As, P are weighed in the amounts corresponding to 20 pieces, and weighing errors are thus reduced. After weighing, raw material is filled in a solution reservoir 7, then, covers 9, 11 are coated. A boat is then heated to melt the ingredients, and the ingredients are averaged. Then, a supporting base 6 is slidably moved to cause the hole 10 to coincide with the hole 2, the melt is sequentially filled in the hole 2, the base is further slidably moved to cause the hole 10 to coincide with the InP substrate 4 held in the hole 5, and a layer is epitaxially grown on the substrate 4. Then, the base is slidably moved to make the hole 10 to communicate with the hole 3, and the solution 8 remaining in the reservoir 7 is all dropped. Because the length l2 of the base 6 for the molten liquid is longer than the length l1 of the base 1, the evaporation of P and As from the melt in the hole 2 is prevented, while a furnace is cooled, the molten liquid is solidified, and an InP substrate provided with an epitaxially grown layer together with many particles in the hole 2 can be obtained. With this configuration, the composition of the epitaxial layer formed with this configuration can be made clear separately in a short time, and an epitaxial layer can be precisely obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8328480A JPS5710227A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8328480A JPS5710227A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710227A true JPS5710227A (en) | 1982-01-19 |
Family
ID=13798069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8328480A Pending JPS5710227A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710227A (en) |
-
1980
- 1980-06-19 JP JP8328480A patent/JPS5710227A/en active Pending
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