JPS571220A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JPS571220A
JPS571220A JP7590880A JP7590880A JPS571220A JP S571220 A JPS571220 A JP S571220A JP 7590880 A JP7590880 A JP 7590880A JP 7590880 A JP7590880 A JP 7590880A JP S571220 A JPS571220 A JP S571220A
Authority
JP
Japan
Prior art keywords
section
heat treatment
wafer
reaction
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7590880A
Other languages
Japanese (ja)
Inventor
Shigeji Kinoshita
Masahiko Denda
Hiroji Harada
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7590880A priority Critical patent/JPS571220A/en
Publication of JPS571220A publication Critical patent/JPS571220A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain the heat treatment device having high treatment efficiency by constituting the device thermally treating a semiconductor device by a heat treatment reaction section and a loader section and an unloader section through wafer carrying sections positioned at the both ends. CONSTITUTION:A wafer constituting the semiconductor device is housed in the loader section 7, forwarded to the heat treatment reaction section 9 through the wafer carrying section 10a, thermally treated here according to the predetermined method and transported to the unloader section through the carrying section 10b again. In this constitution, the reaction section 9 is formed by a heat treatment reaction chamber 3 surrounded by heating apparatus 4 consisting of electric heaters, infrared rays, high frequency, etc., and gates 12 for taking in and out the wafer 1 are mounted previously at an inlet and an outlet of the chamber. A sample base 2 loading the wafer 1 is attached on the bottom, a gas introducing port 6 penetrating the bottom of the reaction chamber 3 is formed in the vicinity of the base 2 and the desired gas is sent into the reaction chamber 3 by means of a pressure device 11. Accordingly, the device is assembled, automation is enabled and the efficiency of treatment is improved.
JP7590880A 1980-06-04 1980-06-04 Heat treatment device Pending JPS571220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7590880A JPS571220A (en) 1980-06-04 1980-06-04 Heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7590880A JPS571220A (en) 1980-06-04 1980-06-04 Heat treatment device

Publications (1)

Publication Number Publication Date
JPS571220A true JPS571220A (en) 1982-01-06

Family

ID=13589900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7590880A Pending JPS571220A (en) 1980-06-04 1980-06-04 Heat treatment device

Country Status (1)

Country Link
JP (1) JPS571220A (en)

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